• KSCE Journal of Civil and Environmental Engineering Research
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• v.12 no.2
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• pp.217-227
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• 1992

The first and second-order reliability method(FORM and SORM) is presented using one dimensional finite difference and two dimensional finite element transport models. FORM and SORM can be used without any restrictive assumptions about the properties of the media, and the sensitivity information obtained as part of these analyses is used to identify the parameters which have major influence on the estimate of probability. The reliability analysis of transport in a one-dimensional domain is used to test the robustness of the reliability code and to evaluate the accuracy of the reliability method. A continuous source 2-D example with a concentration threshold limit state function is used to evaluate the influence of the parameters in the location of interest on the reliability solution.

• Journal of Mechanical Science and Technology
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• v.19 no.spc1
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• pp.305-311
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• 2005

This research presents a three-dimensional modeling technique for a flexible sheet. A relative coordinate formulation is used to represent the kinematics of the sheet. The three-dimensional flexible sheet is modeled by multi-rigid bodies interconnected by out-of-plane joints and plate force elements. A parent node is designated as a master body and is connected to the ground by a floating joint to cover the rigid motion of the flexible sheet in space. Since the in-plane deformation of a sheet such as a paper and a film is relatively small, compared to out-of-plane deformation, only the out-of-plane deformation is accounted for in this research. The recursive formulation has been adopted to solve the equations of motion efficiently. An example is presented to show the validity of the proposed method.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2001.11b
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• pp.230-233
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• 2001

FeSi2/Si Layer were grown using FeSi2, Si wafer by the chemical transport reactio nmethod. The directoptical energy gap was found to be 0.871eV at 300 K. The Hall effect is a physical effect arising in matter carrying electric current inthe presence of a magnetic field. The effect is named after the American physicist E. H. Hall, who discovered it in 1879. IN this paper, we study electrical properties of FeSi2/Si layer. And then we measured Hall coefficient Hall mobility, carrier density and Hall voltage according to variation magnetic field and temperature, Because of important part for it applicationVarious phase of silicide is formed at the metal-Si interface when transition metal contacts to Si. Silicides belong to metallic or semiconducting according to their electrical and optical properties. Metallic silicides are used as gate electrodes or interconnections in VLSI devices. Semiconducting silicides can be used as a new material for IR detectors because of their narrow energy band gap.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2001.11b
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• pp.234-237
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• 2001

FeSi2/Si Layer were grown using FeSi2, Si wafer by the chemical transport reactio nmethod. The directoptical energy gap was found to be 0.871eV at 300 K. The Hall effect is a physical effect arising in matter carrying electric current inthe presence of a magnetic field. The effect is named after the American physicist E. H. Hall, who discovered it in 1879. IN this paper, we study electrical properties of FeSi2/Si layer. And then we measured Hall coefficient Hall mobility,carrier density and Hall voltage according to variation magnetic field and temperature, Because of important part for it applicationVarious phase of silicide is formed at the metal-Si interface when transition metal contacts to Si. Silicides belong to metallic or semiconducting according to their electrical and optical properties. Metallic silicides are used as gate electrodes or interconnections in VLSI devices. Semiconducting silicides can be used as a new material for IR detectors because of their narrow energy band gap.

• The KIPS Transactions:PartC
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• v.10C no.1
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• pp.1-10
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• 2003

In this paper, we propose a secure communication framework for interaction and information sharing between a server and agents in DS-NVSA(Detection System of Network Vulnerability Scan Attacks) proposed in〔1〕. For the scalability and interoperability with other detection systems, we design the proposed IDMEF and IAP that have been drafted by IDWG. We adapt IDMEF and IAP to the proposed framework and provide SKTLS(Symmetric Key based Transport Layer Security Protocol) for the network environment that cannot afford to support public-key infrastructure. Our framework provides the reusability of heterogeneous intrusion detection systems and enables the scope of intrusion detection to be extended. Also it can be used as a framework for ESM(Enterprise Security Management) system.

• Journal of Korean Society of Coastal and Ocean Engineers
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• v.1 no.1
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• pp.31-43
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• 1989

Tidal asymmetry and the associated sediment dynamics in the Keum River Estuary has been investigated from a numerical tidal model. Modeling efforts were focussed on the simulation of large drying sandflat exposed at the mouth of the Estuary and dynamic combination of two-dimensional estuary model and one-dimensional river model. Despite strong frictional attenuation within the estuary, the M4 tides reach significant amplitude, resulting in strong tidal distortion. Model results show that the asymmetry over the area exhibit more intense flood flows transport than do less intense ebb flows of longer duration. This causes filling of the estuary as evidenced by large sandflats spread over the inner area. The spatial distribution of peak bottom stress computed from the tidal model suggest that present tidal sedimentation regime may be altered significantly, especially in the approach channel to outer Kunsan port and downstream part of the dike, due to the construction of cross-channel barrier.

• Bulletin of the Korean Chemical Society
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• v.32 no.3
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• pp.768-778
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• 2011

Calixpyrroles and related macrocycles are non-planer synthetic anion receptors that have attracted considerable attentions in recent years. Although the synthesis of calix[4]pyrrole (known as meso-octamethylporphyrinogen) was reported more than 100 years ago, the anion binding properties were first discovered in 1996. The simple calix[4]pyrroles can be synthesized in single step in high yield by condensation of pyrrole with acetone. The compounds showed preferential binding for halide anions including fluoride, phosphate, carboxylate, and chloride in organic media. Efforts to improve the anion affinity of calix[4]pyrrole and to enhance its selectivity have led to the synthesis of a variety of new calixpyrrole derivatives. Among the various modifications, introduction of straps on one side of the calix[4]pyrroles are the most effective. Incorporation of aromatic rings other than pyrroles also exhibited interesting binding behaviour. Introduction of signalling units as part of the strapping element enable to detect the anions on chromogenic or fluorogenic fashion. Finding of the anion transport properties across the membrane and cytotoxic effects of the calix[4]pyrroles open new window for calixpyrrole-related research. The polymer-incorporated systems have also been employed as anion complexants in solvent-solvent extraction. These old, yet easy-to-make macrocycles have well advanced more recently with the discovery of the ion-pair complexation properties. In this review, the synthetic developments and anion binding properties of calixpyrroles for the last decades will be discussed and will cover the advances in calixpyrrole chemistry.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2001.11a
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• pp.234-237
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• 2001

FeSi$_2$/Si Layer were grown using FeSi$_2$, Si wafer by the chemical transport reaction method. The directoptical energy gap was found to be 0.871ev at 300 K. The Hall effect is a physical effect arising in matter carrying electric current in the presence of a magnetic field. The effect is named after the American physicist E. H. Hall, who discovered it in 1879. In this paper, we study electrical properties of FeSi$_2$/Si layer And then we measured Hall coefficient Hall mobility, carrier density and Hall voltage according to variation magnetic field and temperature, Because of important Part for it application Various phase of silicide is formed at the metal-Si interface when transition metal contacts to Si. Silicides belong to metallic or semiconducting according to their electrical and optical properties. Metallic silicides are used as gate electrodes or interconnections in VLSI devices. Semiconducting silicides can be used as a new material for IR detectors because of their narrow energy band gap.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
• /
• 2001.11a
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• pp.230-233
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• 2001

FeSi$_2$ Layer were grown using FeSi$_2$, Si wafer by the chemical transport reaction method. The directoptical energy gap was found to be 0.87leV at 300 K. The Hall effect is a Physical effect arising in matter carrying electric current in the presence of a magnetic field. The effect is named after the American physicist E.H. Hall, who discovered it in 1879. In this paper, we study electrical properties of FeSi$_2$/Si layer. And then we measured Hall coefficient Hall mobility, carrier density and Hall voltage according to variation magnetic field and temperature, Because of important part for it application various phase of silicide is formed at the metal-Si interface when transition metal contacts to Si. Silicides belong to metallic or semiconducting according to their electrical and optical properties. Metallic silicides are used as gate electrodes or interconnections in VLSI devices. Semiconducting silicides can be used as a new material for IR detectors because of their narrow energy band gap.

• The KIPS Transactions:PartD
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• v.11D no.2
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• pp.461-470
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• 2004

As the semiconductor industrials change 200㎜-sized semiconductor wafer production process to 300㎜-sized one, it requires to develop the software for monitoring and simulating the robot which transfers a 300㎜-sized semiconductor wafer. Because such a software don't run at standalone but communicate MCS(Material Control System) and Its subsystem a robot, its architecture is very complex. Therefore, in order to develop such a software systematically, we must utilize an object-oriented development methodology. UML. This paper presents an UML process application developing the software for monitoring and simulating the robot which transfers a semiconductor wafer on the production process.