• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2001.11b
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• pp.374-377
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• 2001

We have synthesized poly(3-hexylthiophene)(P3HT), which is the most famous conducting polymer and studied the optical properties of P3HT. And then fabricated the device using P3HT as an emitting layer. For the improve of hole injection from ITO electrode to P3HT emitting layer, we use transparent polyaniline(PANI) electrode. In the voltage-current-luminance characteristics of ITO/PANI/P3HT/LiF/Al device which use the PANI film synthesised during 5 cycle, the device turn on at the 2V and the luminance of $218nW/cm^{2}$ obtained at 12V. External quantum efficiency of ITO/PANI/P3HT/LiF/Al increased at 8V than that of ITO/P3HT/LiF/Al device.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2001.11a
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• pp.374-377
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• 2001

We have synthesized poly(3-hexylthiophene)(P3HT), which is the most famous conducting polymer and studied the optical properties of P3HT. And then fabricated the device using P3HT as an emitting layer. For the improve of hole injection from ITO electrode to P3HT emitting layer, we use transparent polyaniline(PANI) electrode. In the voltage-current-luminance characteristics of ITO/PANI/P3HT/LiF/Al device which use the PANI film synthesised during 5 cycle, the device turn on at the 2V and the luminance of 218 nW/$\textrm{cm}^2$ obtained at 12V. External quantum efficiency of ITO/PANI/P3HT/LiF/Al increased at 8V than that of ITO/P3HT/LiF/Al device.

• Proceedings of the Korean Vacuum Society Conference
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• 2015.08a
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• pp.187-187
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• 2015

The past thirty years have seen increasingly rapid advances in the field of Indium Tin Oxide (ITO) transparent thin film.[1] However, a major problem with this ITO thin film application is high cost compared with other transparent thin film materials.[2] So far, in order to overcome this disadvantage, we show a transparent ITO/Ag/i-ZnO multilayer thin film electrode can be the solution. In comparison with using amount of ITO as a transparent conducting material, intrinsic-Zinc-Oxide (i-ZnO) based on ITO/Ag/i-ZnO multilayer thin film showed cost-effective and it has not only highly transparent but also conductive properties. The aim of this research has therefore been to try and establish how ITO/Ag/i-ZnO multilayer thin film would be more effective than ITO thin film. Herein, we report ITO/Ag/i-ZnO multilayer thin film properties by using optical spectroscopic method and measuring sheet resistance. At a certain total thickness of thin film, sheet resistance of ITO/Ag/i-ZnO multilayer was drastically decreased than ITO layer approximately $40{\Omega}/{\square}$ at same visible light transmittance.(minimal point $5.2{\Omega}/{\square}$). Tendency, which shows lowly sheet resistive in a certain transmittance, has been observed, hence, it should be suitable for transparent electrode device.

• Korean Journal of Materials Research
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• v.29 no.5
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• pp.311-316
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• 2019

Transparent conducting electrodes are essential components in various optoelectrical devices. Although indium tin oxide thin films have been widely used for transparent conducting electrodes, silver nanowire network is a promising alternative to indium tin oxide thin films owing to its lower processing cost and greater suitability for flexible device application. In order to widen the application of silver nanowire network, the electrical conductance has to be improved while maintaining high optical transparency. In this study, we report the enhancement of the electrical conductance of silver nanowire network transparent electrodes by copper electrodeposition on the silver nanowire networks. The electrodeposited copper lowered the sheet resistance of the silver nanowire networks from $21.9{\Omega}{\square}$ to $12.6{\Omega}{\square}$. We perform detailed X-ray diffraction analysis revealing the effect of the amount of electrodeposited copper-shell on the sheet resistance of the core-shell(silver/copper) nanowire network transparent electrodes. From the relationship between the cross-sectional area of the copper-shell and the sheet resistance of the transparent electrodes, we deduce the electrical resistivity of electrodeposited copper to be approximately 4.5 times that of copper bulk.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.20 no.9
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• pp.798-801
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• 2007

Multilayer transparent electrodes, having a much lower electrical resistance than the widely used transparent conducting oxide electrodes, were prepared by using radio frequency magnetron sputtering. The multilayer structure consisted of five layers, indium tin oxided (ITO)/zinc oxide (ZnO)/Ag/zinc oxide (ZnO)/ITO. With about 50 nm thick ITO films, the multilayer showed a high optical transmittance in the visible range of the spectrum and had color neutrality. The electrical and optical properties of ITO/ZnO/Ag/ZnO/ITO multilayer were changed mainly by Ag film properties, which were affected by the deposition process of the upper layer. Especially ZnO layer was improved to adhesion of Ag and ITO. A high quality transparent electrode, having a resistance as low as and a high optical transmittance of 91% at 550 nm, was obtained. It could satisfy the requirement for the flexible OLED and LCD.

• 한국신재생에너지학회:학술대회논문집
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• 2011.05a
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• pp.121.2-121.2
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• 2011

Aluminum-doped Zinc Oxide (AZO) is considered as an excellent candidate to replace Indium Tin Oxide (ITO), which is widely used as transparent conductive oxide (TCO) for electronic devices such as liquid crystal displays (LCDs), organic light emitting diodes (OLEDs) and organic solar cells (OSCs). In the present study, AZO thin film was applied to the transparent electrode of a channel-shaped flexible organic solar cell using a low-temperature selective-area atomic layer deposition (ALD) process. AZO thin films were deposited on Poly-Ethylene-Naphthalate (PEN) substrates with Di-Ethyl-Zinc (DEZ) and Tri-Methyl-Aluminum (TMA) as precursors and $H_2O$ as an oxidant for the atomic layer deposition at the deposition temperature of $130^{\circ}C$. The pulse time of TMA, DEZ and $H_2O$, and purge time were 0.1 second and 20 second, respectively. The electrical and optical properties of the AZO films were characterized as a function of film thickness. The 300 nm-thick AZO film grown on a PEN substrate exhibited sheet resistance of $87{\Omega}$/square and optical transmittance of 84.3% at a wavelength between 400 and 800 nm.

• Korean Journal of Materials Research
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• v.30 no.8
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• pp.421-425
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• 2020

A transparent quantum dot (QD)-based light-emitting diode (LED) with silver nanowire (Ag NW) and indium-tin oxide (ITO) hybrid electrode is demonstrated. The device consists of an Ag NW-ITO hybrid cathode (-), zinc oxide, poly (9-vinylcarbazole) (PVK), CdSe/CdZnS QD, tungsten trioxide, and ITO anode (+). The device shows pure green-color emission peaking at 548 nm, with a narrow spectral half width of 43 nm. Devices with hybrid cathodes show better performances, including higher luminance with higher current density, and lower threshold voltage of 5 V, compared with the reference device with a pure Ag NW cathode. It is worth noting that our transparent device with hybrid cathode exhibits a lifetime 9,300 seconds longer than that of a device with Ag NW cathode. This is the reason that the ITO overlayer can protect against oxidization of Ag NW, and the Ag NW underlayer can reduce the junction resistance and spread the current efficiently. The hybrid cathode for our transparent QD LED can applicable to other quantum structure-based optical devices.

• Korean Journal of Materials Research
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• v.12 no.5
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• pp.347-352
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• 2002

A transparent dielectric of the $PbO-B_2O_3-SiO_2-A1_2O_3$ system which was a low melting glass has been used for PDP (Plasma Display Panel), but it has a problem which is a reaction to be occurred between a transparent dielectric layer and electrodes (Ag, ITO) after firing. This research was conducted for ion migration of $Ag^+\$ and $Sn^ {2+}$ during firing three different frits of low melting glass. The result showed that yellowing phenomena occurred through a chemical reaction between $Ag^+\$and $Sn^ {2+}$ at 550~58$0^{\circ}C$ for 20~60 min. In addition, it was confirmed that the migration of $Sn^{2+}$ from ITO electrode made a strong effect on the yellowing phenomena.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2007.06a
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• pp.397-397
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• 2007

Multilayer transparent electrodes, having a much lower electrical resistance than the widely used transparent conducting oxide electrodes, were prepared by using radio frequency magnetron sputtering. The multilayer structure consisted of five layers, indium tin oxided(ITO)/zinc oxide(ZnO)/Ag/oxide(ZnO)/ITO. With about 50nm thick ITO films, the multilayer showed a high optical transmittance in the visible range of the spectrum and had color neutrality. The electrical and optical properties of ITO/ZnO/Ag/ZnO/ITO multilayer were changed mainly by Ag film properties, which were affected by the deposition process of the upper layer. Especially ZnO layer was improved to adhesion of Ag and ITO. A high quality transparent electrode, having a resistance as low as and a high optical transmittance of 91% at 550nm, was obtained. It could satisfy the requirement for the flexible OLED and LCD.

• The Journal of Korean Institute of Electromagnetic Engineering and Science
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• v.29 no.4
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• pp.277-284
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• 2018

This paper reports the transparent electrode, which would be applied to transparent displays and smart glasses. Herein, a squared metal mesh with the most widely used copper wire in microwaves is studied for the alternating thin-film-type transparent and conducting indium tin oxide(ITO), with a low conductivity(sheet resistance > $5{\Omega}/sq.$). The electromagnetic performance of a patch antenna with metal mesh is analyzed. This paper presents the results of the optical(OT, optical transparent) and electrical(sheet resistance) characteristics of a squared metal mesh, which is a basic design. To improve the OT, copper wire(w=0.2 mm) is used in fabricating the squared metal mesh and the relationship between the OT and the antenna performance(radiation gain, radiation pattern) was analyzed according to the mesh size(l=1, 2 mm). The measurement results show that the antenna performance and the optical characteristic are in inverse proportion to each other. In real applications, the optical and electrical characteristics, and the costs of production are to be considered.