• Journal of the Korean Vacuum Society
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• v.17 no.1
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• pp.23-27
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• 2008

We have investigated the effect of annealing on the structural and optical properties of polycrystalline Ga doped ZnO (GZO) films grown on glass substrates by RF-magnetron sputter at room temperature. The structural and optical properties of as-grown GZO films were characterized and then samples were annealed at $400{\sim}600^{\circ}C$ in $N_2$ ambient for 30, 60 minutes, respectively. The field emission scanning electron microscopy (FE-SEM) and X-ray diffraction (XRD) were used to measure the grain size and the crystalline quality of the films. We found that the crystalline quality was improved and the grain size tends to be increased. The optical properties of GZO thin films were analyzed by UV-VIS-NIR spectrophotometers. It is found that optical properties of thin films are increased by annealing and can be used for transparent electrode application. We believe that the appropriate post-growth heat treatment could be contributed to the improvement of GZO-based devices.

• Proceedings of the Korean Vacuum Society Conference
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• 2014.02a
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• pp.344-344
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• 2014

Transparent amorphous oxide semiconductors such as a In-Ga-Zn-O (a-IGZO) have advantages for large area electronic devices; e.g., uniform deposition at a large area, optical transparency, a smooth surface, and large electron mobility >10 cm2/Vs, which is more than an order of magnitude larger than that of hydrogen amorphous silicon (a-Si;H).1) Thin film transistors (TFTs) that employ amorphous oxide semiconductors such as ZnO, In-Ga-Zn-O, or Hf-In-Zn-O (HIZO) are currently subject of intensive study owing to their high potential for application in flat panel displays. The device fabrication process involves a series of thin film deposition and photolithographic patterning steps. In order to minimize contamination, the substrates usually undergo a cleaning procedure using deionized water, before and after the growth of thin films by sputtering methods. The devices structure were fabricated top-contact gate TFTs using the a-IGZO films on the plastic substrates. The channel width and length were 80 and 20 um, respectively. The source and drain electrode regions were defined by photolithography and wet etching process. The electrodes consisting of Ti(15 nm)/Al(120 nm)/Ti(15nm) trilayers were deposited by direct current sputtering. The 30 nm thickness active IGZO layer deposited by rf magnetron sputtering at room temperature. The deposition condition is as follows: a rf power 200 W, a pressure of 5 mtorr, 10% of oxygen [O2/(O2+Ar)=0.1], and room temperature. A 9-nm-thick Al2O3 layer was formed as a first, third gate insulator by ALD deposition. A 290-nm-thick SS6908 organic dielectrics formed as second gate insulator by spin-coating. The schematic structure of the IGZO TFT is top gate contact geometry device structure for typical TFTs fabricated in this study. Drain current (IDS) versus drain-source voltage (VDS) output characteristics curve of a IGZO TFTs fabricated using the 3-layer gate insulator on a plastic substrate and log(IDS)-gate voltage (VG) characteristics for typical IGZO TFTs. The TFTs device has a channel width (W) of $80{\mu}m$ and a channel length (L) of $20{\mu}m$. The IDS-VDS curves showed well-defined transistor characteristics with saturation effects at VG>-10 V and VDS>-20 V for the inkjet printing IGZO device. The carrier charge mobility was determined to be 15.18 cm^2 V-1s-1 with FET threshold voltage of -3 V and on/off current ratio 10^9.

• Applied Chemistry for Engineering
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• v.17 no.6
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• pp.644-647
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• 2006

The indium zinc oxide (IZO) thin films were deposited using a radio frequency reactive magnetron sputtering method. Among the various processing variables, $O_{2}$ concentration and annealing temperature after deposition were selected and the optical, electrical, and structural properties of IZO thin films were investigated. As the $O_{2}$ concentration increased, the deposition rate of IZO thin films decreased, the resistivity increased and the transmittance slightly increased. According to atomic force microscopy analysis, the IZO films deposited at pure Ar showed rough surface and those deposited with $O_{2}$ addition exhibited relatively smooth surface. The IZO thin films deposited at pure Ar were annealed at 250, 350, and $450^{\circ}C$, respectively. The IZO thin film deposited at pure Ar showed the lowest transmittance and resistivity and resistivity greatly increased at the annealing temperature exceeding $250^{\circ}C$. The higher annealing temperature IZO films were annealed at, the smoother surface the films showed. The x-ray diffraction revealed that IZO films annealed at higher temperature had better crystalline structures.

• Applied Chemistry for Engineering
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• v.23 no.4
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• pp.377-382
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• 2012

CdS thin films have been widely used as a buffer layer of CIGS semiconductor solar cells to reduce the lattice mismatch between transparent electrode and absorber layer. In order to prepare the CdS films with high transparency and low resistivity, they were deposited by varying Cd concentration with the constant S concentration in the solution using chemical bath deposition method. They were analyzed in terms of structural, optical and electrical properties of CdS films according to the $[S^{2-}]/[Cd^{2+}]$ ratio. In the case of Cd concentration higher than S concectration, CdS thin films were formed mainly by cluster- by-cluster formation due to the homogeneous reaction between Cd and S in the solution. Therefore the grain size increased and the transmittance decreased. On the other hand, in the case of Cd concentration lower than S concentration, CdS films were formed by heterogeneous reaction on the substrate rather than in the solution. The CdS films have the grains with the uniform circular shape of a few hundreds ${\AA}$. As the Cd concentration increased in the solution, the $[S^{2-}]/[Cd^{2+}]$ ratio decreased and the resistivity decreased by the increase in the carrier concentration due to the formation S vacancy by the excess Cd.

• Clean Technology
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• v.19 no.4
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• pp.388-392
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• 2013

Iindium-tin-oxide (ITO) material was had to use in display application as transparent electrode. However it would be problems comes up, the depletion of indium, tin and energy consumption of production process. Therefore recently trend was demanded alternative ITO material and recycling/reused ITO. In this conditions, the environmental impact have to express correct value about recycling/reused ITO process. The life cycle assessment was valuable method in this process. Thus first step was carried out separating in/out put (material) sources and then, exactive data base (DB) was applied. The result of environment impact was calculated by affect categories and recycling rate was set to 34% (This value was measured in previous project). The rate (g) of ITO material was calculated by chemical equivalent. In result, environmental impact were revealed acidification potential and abiotic depletion and if do not recycle/reuse ITO, $ 476 per 1 ton waste in land.

• Journal of Industrial Convergence
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• v.20 no.10
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• pp.33-38
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• 2022

In this paper, a simple method of forming a solution-based carbon nanotube (CNT) for use as a conductive material for electronic devices was studied. The CNT thin film coating was performed on the glass by applying the spin coating method and the argon atmospheric pressure plasma process. In order to observe changes in electrical and physical properties according to the number of coatings, samples formed in the same manner from times 1 to 5 were prepared, and surface shape, reflectance, transmittance, absorbance, and sheet resistance were measured for each sample. As the number of coatings increased, the transmittance decreased, and the reflectance and absorptivity increased in the entire measurement wavelength range. Also, as the wavelength decreases, the transmittance decreases, and the reflectance and absorption increase. In the case of electrical properties, it was confirmed that the conductivity was significantly improved when the second coating was applied. In conclusion, in order to replace CNT with a transparent electrode, it is necessary to consider the number of coatings in consideration of reflectivity and electrical conductivity together, and it can be seen that 2 times is optimal.