• 자원리싸이클링
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• 제23권3호
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• pp.61-70
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• 2014

주석은 땜납, 주석도금강판, 청동 합금, 투명전극용 타겟 및 화학첨가제 등에 널리 사용되고 있다. 최근 자원의 희소성 및 경제성으로 인해 주석 스크랩에 대한 재활용 기술이 연구되고 있다. 본 논문에서는 주석이 함유된 공정 스크랩, 슬러지, 도금 폐액 및 합금의 재활용 기술에 대하여 1970년부터 2013년까지 공개/등록된 한국, 미국, 중국, 일본, 유럽의 특허에 대하여 조사하였다. 특허는 키워드를 사용하여 수집하였으며, 기술의 정의에 의해 필터링 하여 연도, 국가, 출원인 및 기술에 따라 분석하였다.

• 대한전기학회:학술대회논문집
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• 대한전기학회 2006년도 추계학술대회 논문집 전기물성,응용부문
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• pp.202-203
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• 2006

In the AC PDP, the MgO film is used as electrode protective film. This film must provide excellent ion bombardment protection, high secondary electron emission, and should be high transparent to visible radiation. In this study, we investigated the relations between the crystal orientation and e-beam evaporation process parameters. The crystal orientation of the MgO layer depends on the conditions of deposition. The parameters are the thickness of the MgO film $1000{\AA}-6500{\AA}$, the deposition rate $200{\AA}/min{\sim}440{\AA}/min$, the temperature $150^{\circ}C{\sim}250^{\circ}C$, and the distance between crucible and substrate 11cm ${\sim}$ 14cm. The temperature of substrate and evaporation rate of source material, or deposition rate of the film, are definitely related to the crystal orientation of the MgO thin film. The crystal orientation can be changed by the distance between the target(MgO tablet) and the substrate. However, the crystal orientation is not much affected by the thickness of MgO thin film.

• 한국전기전자재료학회논문지
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• 제24권4호
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• pp.303-308
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• 2011

The Gallium-doped ZnO(GZO) film deposited at a temperature of $200^{\circ}C$ and a pressure of 10 mtorr has an optical transmittance of 89.0% and a resistivity of $2.0\;m{\Omega}{\cdot}cm$ because of its high crystallinity. Effect of $Al_2O_3$ oxide buffer layers on the optical and electrical properties of sputtered ZnO films were intensively investigated for developing the electrodes of opto-electronic devices which demanded high optical transmittance and low resistivity. The use of $Al_2O_3$ buffer layer could increase optical transmittance of GZO film to 90.7% at a wavelength of 550 nm by controlling optical spectrum. Resistivity of deposited GZO films were much dependent on the deposition condition of $O_2/(Ar+O_2)$ flow rate ratio during the buffer layer deposition. It is considered that the $Al_2O_3$ buffer layer could increase the carrier concentration of the GZO films by doping effect of diffused Al atoms through the rough interface.

• 한국표면공학회지
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• 제49권1호
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• pp.92-97
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• 2016

The plasma has been used in various industrial fields of semiconductors, displays, transparent electrode and so on. Plasma diagnostics is critical to the uniform process and the product. We use the electron temperature of the various plasma parameters for the diagnosis of plasma. Generally, the range of the electron temperature which is used in a semiconductor process used the range of 1 eV to 10 eV. The difference of electron temperature of 0.5 eV has a influence in plasma process. The electron temperature can be measured by the electrical method and the optical method. Measurement of electron temperature for various gas flow rates was performed in DC-magnetron sputter and Inductively Coupled Plasma. The physical properties of the thin film were also determined by changing electron temperatures. The transmittance was measured using the integrating sphere, and wavelength range was measured at 300 ~ 1100 nm. We obtain the thin film of the mobility, resistivity and carrier concentration using the hall measurement system. As to the electron temperature increase, optical and electrical properties decrease. We determine it was influenced by the oxygen flow ratio and plasma.

• 한국정보통신학회논문지
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• 제8권2호
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• pp.440-448
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• 2004

본 논문에서는 II-Vl족의 ZnTe 화합물반도체 태양전지를 제작하기 위하여 투명전극(AZO) 및 Buffer layer(ZnO)의 특성과 태양전지의 효율에 가장 큰 영향을 미치는 광흡수층의 에너지밴드갭을 줄이는 연구를 하였다. ZnTe박막은 Zn(Zinc)과 Te(Tellurium)를 co-sputtering법을 이용하여 증착하였다. ZnTe 박막은 Zn과 Te의 RF power를 각각 50W, 30W로 하여 10mTorr의 Ae 분위기에서 20$0^{\circ}C$의 기판온도로 제작되었으며, 이때의 에너지밴드갭은 1.73eV였다. 이렇게 제작된 박막을 진공상태에서 $400^{\circ}C$의 온도로 10초간 열처리하여 1.67eV의 에너지밴드갭을 얻을 수 있었고, 이때의 Zn과 Te의 비율은 32%:68%였다. 최적의 조건에서 태양전지는 6.85% (Voc:0.69V, Jsc:21.408㎃/$cm^2$, Fill Factor (FF):0.46)의 효율을 얻을 수 있었다.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2007년도 추계학술대회 논문집
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• pp.380-381
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• 2007

This paper reports on the deposition conditions and properties of ITO films used as electrode layer in a organic light emitting diodes on a PET substrate. The deposition technique employed was specially designed roll-to-roll sputtering. The oxide was deposited at room temperature in an argon and oxygen plasma on a transparent conducting ITO layer on a PET film. The influence of deposition parameters such as DC power, working pressure and oxygen partial pressure has been investigated, in order to obtain the best compromise between a high deposition rate and adequate electro-optical properties. Electrical and optical properties of ITO films were analyzed by Hall measurement examinations with van der pauw geometry at room temperature and UV/Vis spectrometer analysis, respectively. In addition, the structural properties and surface smoothness were measured by x-ray diffraction and scaning electron microscopy, respectively. From optimized ITO films grown by roll-to-roll sputter system, good electrical$(6.44{\times}10^{-4}\;{\Omega}-cm)$ and optical(above 86 % at 550 nm) properties were obtained. Also, the ITO films exhibited amorphous structure and very flat surface beacause of low deposition temperature.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2004년도 하계학술대회 논문집 Vol.5 No.1
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• pp.158-161
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• 2004

We have studied a lifetime in organic light-emitting diodes depending on buffer layer. A transparent electrode of indium-tin-oxide(ITO) was used as an anode. And the cathode for electron injection was LiAl. Phthalocyanine Copper(CuPc), Poly(3,4-ethylenedioxythiophene):poly (PEDOT:PSS), or poly (9-vinylcarbazole)(PVK) material was used as a buffer layer. A thermal evaporation was performed to make a thickness of 40nm of TPD layer at a rate of $0.5{\sim}1\;{\AA}/s$ at a base pressure of $5{\times}10^{-6}\;torr$. A material of tris(8-hydroxyquinolinate) Aluminum($Alq_3$) was used as an electron transport and emissive layer. A thermal evaporation of $Alq_3$ was done at a deposition rate of $0.7{\sim}0.8[{\AA}/s]$ at a base pressure of $5{\times}10^{-6}\;torr$. By varying the buffer material, hole injection at the interface could be controlled because of the change in work function. Devices with CuPc and PEDOT:PSS buffer layer are superior to the other PVK buffer layer.

• 한국진공학회:학술대회논문집
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• 한국진공학회 2013년도 제45회 하계 정기학술대회 초록집
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• pp.75.2-75.2
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• 2013

Atomic layer deposition (ALD), utilizing self-limiting surface reactions, could offer promising perspectives for future efficient energy conversion devices. The capabilities of ALD for surface/interface modification and construction of novel architectures with sub-nanometer precision and exceptional conformality over high aspect ratio make it more valuable than any other deposition methods in nanoscale science and technology. In the context, a variety of researches on fabrication of active materials for energy conversion applications by ALD are emerging. Among those materials, one-dimensional nanotubular titanium dioxide, providing not only high specific surface area but also efficient carrier transport pathway, is a class of the most intensively explored materials for energy conversion systems, such as photovoltaic cells and photo/electrochemical devices. The monodisperse, stoichiometric, anatase, TiO2 nanotubes with smooth surface morphology and controlled wall thickness were fabricated via low-temperature template-directed ALD followed by subsequent annealing. The ALD-grown, anatase, TiO2 nanotubes in alumina template show unusual crystal growth behavior which allows to form remarkably large grains along axial direction over certain wall thickness. We also fabricated dye-sensitized solar cells (DSCs) introducing our anatase TiO2 nanotubes as photoanodes, and studied the effect of blocking layer, TiO2 thin films formed by ALD, on overall device efficiency. The photon convertsion efficiency ~7% were measured for our TiO2 nanotubebased DSCs with blocking layers, which is ~1% higher than ones without blocking layer. We also performed open circuit voltage decay measurement to estimate recombination rate in our cells, which is 3 times longer than conventional nanoparticulate photoanodes. The high efficiency of our ALD-grown, anatase, TiO2 nanotube-based DSCs may be attributed to both enhanced charge transport property of our TiO2 nanotubes photoanode and the suppression of recombination at the interface between transparent conducting electrode and iodine electrolytes by blocking layer.

• 한국광학회지
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• 제19권4호
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• pp.249-254
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• 2008

새 구조의 액정 엑스선 감지기를 만들었다. 이것은 액정판을 만들고 유리판을 얇게 식각한 다음, 그 유리판 위에 반사막과 광전도층을 연속하여 입힌 구조이다. 새 구조의 액정엑스선 감지기는 공정의 안정성, 대면적화, 감도 등에서 이미 상품화된 엑스선 감지기와도 충분히 경쟁할 수 있으며, 따라서 성공적으로 상용화 할 수 있음을 확인했다.

• 항공우주시스템공학회지
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• 제12권6호
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• pp.1-8
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• 2018

투명 전극에 사용되는 필름인 이방성전도필름은 전도성 입자를 재료로 하여 열 압착법으로 제조되고 있다. 하지만 열 압착법은 낭비되는 재료가 많고 공정이 복잡하다는 단점을 가지고 있으며, 이와 같은 단점을 극복하기 위해 전도성 입자 잉크를 이용한 잉크젯 프린팅 기술을 제안하였다. 잉크의 특성 및 프린팅 조건은 패터닝 선 두께에 영향을 주게 되며, 미세 패터닝을 위한 최적 조건 도출이 중요하다. 본 논문에서는 전도성 입자 잉크를 제작하였으며, 노즐의 두께와 유량을 변화하여 패터닝 결과물을 제작하였고, 전도성 입자 잉크의 토출에 따른 전기전도도를 도출하였다.