• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.23 no.9
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• pp.681-684
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• 2010

The $TiO_2$/ZnS/Ag/ZnS/$TiO_2$ multilayered structure for the transparent electrodes in plasma display panel was designed by essential macleod program (EMP) and the multilayered film was deposited on a glass substrate by direct-current (DC)/radio-frequency (RF) magnetron sputtering system. During film deposition process, the Ag layer in $TiO_2$/Ag/$TiO_2$ structure became oxidized and the filter characteristic was degraded easily. In this study, ZnS layer was adopted as a diffusion blocking layer between $TiO_2$ and Ag to prevent the oxidation of Ag layer efficiently in $TiO_2$/ZnS/Ag/ZnS/$TiO_2$ structure. Based on the AES depth profiling analysis, the Ag layer was effectively protected by the ZnS layer as compared with the $TiO_2$/Ag/$TiO_2$ multilayered films without ZnS as an antioxidant layer. The 3 times stacked $TiO_2$/ZnS/Ag/ZnS/$TiO_2$ films have low sheet resistance of $1.22{\Omega}/{\square}$ and luminous transmittance was as high as 62% in the visible ranges.

• Korean Journal of Materials Research
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• v.15 no.8
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• pp.491-495
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• 2005

(Zn,Mg)O (ZMO) thin films doped with Ga $(0\~0.03mol\%)$ in the target source were prepared by pulsed laser deposition on c-plane sapphire substrates at $500^{\circ}C$, and the effect of Ga contents on the properties of the electrical, optical and crystal properties of the deposited films was investigated. From X-ray diffraction patterns, ZMO film doped with $0.02 mol\%$ Ga showed crystal structure with c-axis preferred orientation, showing only the (0002) and (0004) diffraction peaks. In contrast, ZMO film doped with $Ga=0.03 mol\%$ showed a randomly oriented crystal structure. All the samples were highly transparent, showing the transmittance values of above $85\%$ in the visible region. For all the Ga doped ZMO films, the value of energy band gap was found to be about 3.5 eV, regardless of their Ga contents. From the Hall measurements, the resistivity and the carrier density for the ZMO film doped with $0.01 mol\%$ Ga were about $5\times10^{-4}\Omega-cm$ and $2\times10^{21}cm^{-3}$, respectively.

• Journal of Powder Materials
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• v.26 no.5
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• pp.375-382
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• 2019

Homogeneous multicomponent indium gallium zinc oxide (IGZO) ceramics for transparent electrode targets are prepared from the oxides and nitrates as the source materials, and their properties are characterized. The selected compositions were $In_2O_3:Ga_2O_3:ZnO$ = 1:1:2, 1:1:6, and 1:1:12 in mole ratio based on oxide. As revealed by X-ray diffraction analysis, calcination of the selected oxide or nitrides at $1200^{\circ}C$ results in the formation of $InGaZnO_4$, $InGaZn_3O_6$, and $InGaZn_5O_8$ phases. The 1:1:2, 1:1:6, and 1:1:12 oxide samples pressed in the form of discs exhibit relative densities of 96.9, 93.2, and 84.1%, respectively, after sintering at $1450^{\circ}C$ for 12 h. The $InGaZn_3O_6$ ceramics prepared from the oxide or nitrate batches comprise large grains and exhibit homogeneous elemental distribution. Under optimized conditions, IGZO multicomponent ceramics with controlled phases, high densities, and homogeneous microstructures (grain and elemental distribution) are obtained.

• Journal of Adhesion and Interface
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• v.24 no.2
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• pp.54-59
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• 2023

Silver nanowire-based transparent electrodes are very attractive as a next-generation flexible and transparent electrode that can replace ITO-based flexible electrodes because they have excellent conductivity, transmittance and mechanical flexibility. However, weak understanding of the silver nanowire solution for the fabrication of silver nanowire-based transparent electrodes often cause abnormal operation of the electrical device or peeling problem of the electrode films when applied to electronic devices. Here, we studied a Hydroxypropyl Methylcellulose (HPMC) adhesion promoter, which is one of the additives for silver nanowire solution, to improve the understanding of silver nanowire solution. In detail, it is characterized how the HPMC changes the properties of silver nanowire solution and silver nanowire film, which is fabricated with silver nanowire solution including the HPMC adhesion promoter. As the characteristics of solution, polar surface tension and dispersive surface tension were measured. As the film characteristics, surface energy, surface morphology, silver nanowire density, and sheet resistance were analyzed.

• Journal of IKEEE
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• v.20 no.4
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• pp.392-397
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• 2016

In this paper, Characteristics of the ITO thin film deposited were analyzed using DC magnetron sputtering in order to investigate the deposition conditions of ITO thin film for transparent electrode. The experiment conditions were atmospheric pressure from 1 to 3[mTorr] with 1 [mTorr] step, bias electric voltage ranged from 260[V] to 330[V] with 10[V] step. The transmittance, refractive index and surface and cross-sectional shape of the deposited thin film were measured with an UV.-VIS. spectrophotometer, ellipsometer and SEM. Such condition as 1~2[mTorr] and near 300[V] voltage the transmittance was over 90[%] and the refractive index more than 2. Therefore, it was confirmed that the appropriate condition for making a highly transparent conductive electrode.

• Journal of the Korean Society of Manufacturing Technology Engineers
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• v.24 no.1
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• pp.43-48
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• 2015

Silver nanowire (AgNW) is a material that is increasingly being used for transparent electrodes, as a substitute for indium tin oxide (ITO), owing to its flexibility, high transmittance to sheet resistance ratio, and simple production process. This study involves manufacturing large-area organic photovoltaic cells (OPVs) deposited on AgNW electrodes. We compared the efficiency of OPVs with ITO and AgNW electrodes. The results verified that an OPV with an AgNW electrode performed better than that with an ITO electrode. Furthermore, by using the knife coating method, we successfully fabricated large-area OPVs without the loss of efficiency. Use of AgNW instead of ITO demonstrated that an OPV could be produced on various substrates by the solution process method, dropping the productions costs significantly. Additionally, by using the knife coating method, the process time and amount of wasted solution are reduced. This leads to an increase in the efficient fabrication of the OPV.

• Journal of information and communication convergence engineering
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• v.3 no.4
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• pp.179-183
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• 2005

A photodiode capable of obtaining a sufficient photo/ dark current ratio at both forward bias state and reverse bias state is proposed. The photodiode includes a glass substrate, an aluminum film formed as a lower electrode over the glass substrate, an alumina film formed as an insulator barrier over the aluminum film, a hydrogenated amorphous silicon film formed as a photo conduction layer over a portion of the alumina film, and a transparent conduction film formed as an upper electrode over the hydro-generated amorphous silicon film. A good quality alumina $(Al_2O_3)$ film is formed by oxidation of aluminum film using electrolyte solution of succinic acid. Alumina is used as a potential barrier between amorphous silicon and aluminum. It controls dark-current restriction. In case of photodiodes made by changing the formation condition of alumina, we can obtain a stable dark current $(\~10^{-12}A)$ in alumina thickness below $1000{\AA}$. At the reverse bias state of the negative voltage in ITO (Indium Tin Oxide), the photo current has substantially constant value of $5{\times}10^{-9}$ A at light scan of 100 1x. On the other hand, the photo/dark current ratios become higher at smaller thicknesses of the alumina film. Therefore, the alumina film is used as a thin insulator barrier, which is distinct from the conventional concept of forming the insulator barrier layer near the transparent conduction film. Also, the structure with the insulator thin barrier layer formed near the lower electrode, opposed to the ITO film, solves the interface problem of the ITO film because it provides an improved photo current/dark current ratio.

• Proceedings of the Korean Vacuum Society Conference
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• 2011.08a
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• pp.125-125
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• 2011

In this study, we investigated the electrical, optical, structural, and surface properties of indium zinc oxide (IZO)/Ag/IZO multilayer electrode grown by specially designed roll-to-roll sputtering system using the flexible substrate. By the continuous roll-to-roll sputtering of the bottom IZO, Ag, and top IZO layers at room temperature, they were able to fabricate a high quality IZO/Ag/IZO multilayer electrode. At optimized conditions, the bottom IZO layer (40 nm) was deposited on a flexible substrate. After deposition of the Bottom IZO layer, Ag layer was deposited onto the bottom IZO film as a function of DC power (200~500 W). Subsequently, the top IZO layer was deposited onto the Ag layer at identical deposition conditions to the bottom IZO layer (40 nm). We investigated the characteristics of IZO/Ag/IZO multilayer electrode as a function of Ag thickness. It was found that the electrical and optical properties of IZO/Ag/IZO multilayer electrode was mainly affected thickness of the Ag layer at optimized condition. In case of IZO/Ag/IZO multilayer electrode with the Ag power (350W), it exhibited a low sheet resistance of 7.1 ohm/square and a high transparency of 86.4%. Furthermore, we fabricated the touch screen panel using the IZO/Ag/IZO multilayer electrode, which demonstrate the possibility of the IZO/Ag/IZO multilayer electrode grown by roll-to-roll sputtering system as a transparent conducting layer in the touch screen panel.

• Proceedings of the Korean Vacuum Society Conference
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• 2013.02a
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• pp.618-618
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• 2013

Graphene is only one atom thick planar sheet of sp2-bonded carbon atoms arranged in a honeycomb crystal lattice, which has flexible and transparent characteristics with extremely high mobility. These noteworthy properties of graphene have given various applicable opportunities as electrode and/or channel for various flexible devices via suitable physical and chemical modifications. In this work, for the development of all-graphene devices, we performed to synthesize alternately patterned structure of mono- and multi-layer graphene by using the patterned Ni film on Cu foil, having much different carbon solid solubilities. Depending on the process temperature, Ni film thickness, introducing occasion of methane and gas ratio of CH4/H2, the thickness and width of the multi-layer graphene were considerably changed, while the formation of monolayer graphene on just Cu foil was not seriously influenced. Based on the alternately patterned structure of mono- and multi-layer graphene as a channel and electrode, respectively, the flexible TFT (thin film transistor) on SiO2/Si substrate was fabricated by simple transfer and O2 plasma etching process, and the I-V characteristics were measured. As comparing the change of resistance for bending radius and the stability for a various number of repeated bending, we could confirm that multi-layer graphene electrode is better than Au/Ti electrode for flexible applications.

• Proceedings of the KIEE Conference
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• 1999.07e
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• pp.2227-2229
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• 1999

As a direct-view flat panel displays, there are many devices, such as plasma display panels(PDPs), vacuum fluorescent displays (VFDs), and light emitting diode(LED). Among these, a PDP is the first type of panel display to be made commercially available. A 'Plasma display' is the general term for a flat display utilizing the light emission that is produced by gas discharge. However, the brightness and Luminous efficiency are still not adequate for consumer television. So, the new sustain electrode type of ac PDP was proposed. By arranging the transparent electrode of quadrangle by zigzag, the area of electrode are reduced, and the length of electrode gap is increased. It generates a high luminous efficiency(corresponding to a 40% improvement of standard type), the same discharge voltage characteristics, and the low power consumption at same luminance.