• 제목/요약/키워드: Transparent electrode

검색결과 497건 처리시간 0.025초

은나노와이어와 2차원 구조 루테늄산화물 하이브리드 재료의 광전기적 특성 (Optoelectric properties of hybrid materials with Ag-nanowire and 2-dimensional structured RuO2)

  • 이정민;박희정
    • 한국결정성장학회지
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    • 제34권2호
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    • pp.55-60
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    • 2024
  • 화학적 박리법을 이용하여 나노미터 두께를 갖는 2차원(2D) RuO2 나노시트를 합성하였다. 차세대 투명전극 소재로 주목받고 있는 Ag-nanowire(NW)와 본 연구에서 합성된 2D-RuO2를 하이브리드화하였다. 기판 위에 Ag-NW 코팅 후 2D-RuO2를 추가로 코팅하였다. 광투과도의 감소는 있었지만 2D-RuO2를 하이브리드화하여 면저항 감소 효과를 확인할 수 있었다. 또한 제조된 투명전극의 유연성 실험도 진행하였다. 벤딩 후 면저항 변화로 확인하였다. 2D-RuO2의 추가 코팅으로 투명전극 유연성이 향상되었다.

반응성 스퍼트링으로 형성된 ITO의 유전채 소성에 따른 특성변화 (The Property Change of ITO Prepared by Reactive R.F. Sputtering in POP manufacturing Process)

  • 남상옥;지성원;손제봉;허근도;조정수;박정후
    • 대한전기학회:학술대회논문집
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    • 대한전기학회 1997년도 하계학술대회 논문집 C
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    • pp.1411-1413
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    • 1997
  • The thin film that is electrically conductive and optically transparent is called conductive transparent thin film. ITO(Indium-Tin Oxide) which is a kind of conductive transparent thin film has been widely used in solar cell, transparent electrical heater, selective optical filter, FDP(Flat Display Panel) such as LCD (Liquid Crystal Display), PDP(Plasma Display Panel) and so on. Especially in PDP, ITO films is used as a transparent electrode in order to maintain discharge and decrease consumption power through the improvement of cell structure. In this study, we prepared ITO by reactive r.f. sputtering with indium-tin(Sn wt 10%) alloy target instead of indium-tin oxide target. The ITO films deposited at low temperature $150^{\circ}C$ and 8% $O_2$ partial pressure showed about $3.6{\Omega}/{\square}$. At the end of firing, the resistance of ITO was decreased, the optical transparence was improved above 90%.

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금속층 두께에 따른 ITO/Ag/ITO 다층 투명 전극의 발열 특성 연구 (A Study on the Exothermic Properties of ITO/Ag/ITO Multilayer Transparent Electrode Depending on Metal Layer Thickness)

  • 민혜진;강예지나;손혜원;신소현;황민호;이현용
    • 한국전기전자재료학회논문지
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    • 제35권1호
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    • pp.37-43
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    • 2022
  • In this study, we investigated the optical, electrical and exothermic characteristics of ITO/Ag/ITO multilayer structures prepared with various Ag thicknesses on quartz and PI substrates. The transparent conducting properties of the ITO/Ag/ITO multilayer films depended on the thickness of the mid-layer metal film. The ITO/Ag (14 nm)/ITO showed the highest Haccke's figure of merit (FOM) of approximately 19.3×10-3 Ω-1. In addition, the exothermic property depended on the substrate. For an applied voltage of 3.7 V, the ITO/Ag (14 nm)/ITO multilayers on quartz and PI substrates were heated up to 110℃ and 200℃, respectively. The bending tests demonstrated a comparable flexibility of the ITO/Ag/IT multilayer to other transparent electrodes, indicating the potential of ITO/Ag/ITO multilayer as a flexible transparent conducting heater.

Study on the Electrical Stability of Al-doped ZnO Thin Films For OLED as an alternative electrode

  • Jung, Jong-Kook;Lee, Seong-Eui;Lim, Sil-Mook;Lee, Ho-Nyeon;Lee, Young-Gu
    • 한국정보디스플레이학회:학술대회논문집
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    • 한국정보디스플레이학회 2006년도 6th International Meeting on Information Display
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    • pp.1469-1472
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    • 2006
  • We investigated the electrical and optical properties of ZnO:Al thin films as a function of the thermal process conditions. The film was prepared by RF magnetron sputtering followed by annealing in a box furnace in air. An ZnO:Al (98:2) alloy with the purity of 99.99% (3 inch diameter) was used as the target material. The electrical properties of the transparent electrode, exhibited surface oxidation as a result of rapid oxygen absorption with increasing annealing temperature. The processed ZnO:Al films and commercial ITO(indium-tin-oxide) were applied to an OLED stack to investigate the current density and luminescence efficiency. The efficiency of the device using the ZnO:Al electrode was higher than that from the device using the ITO electrode.

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Iron(II) Tris(3-bromo-1,10-phenanthroline) Complex: Synthesis, Crystal Structure and Electropolymerization

  • Lee, Kyeong-Jong;Yoon, Il;Lee, Shim-Sung;Lee, Bu-Yong
    • Bulletin of the Korean Chemical Society
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    • 제23권3호
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    • pp.399-403
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    • 2002
  • The complex of iron(II) tris(3-Br-phen) (3-Br-phen; 3-bromo-1,10-phenanthroline) was prepared as a precursor of electropolymerization and the crystal structure of [Fe(3-Br-phen)3]($PF_6$)2${\cdot}$CH3CN with a distorted octahedral geometry has been investigated. The reductive electropolymerization of $>[Fe(3-Br-phen)3]^{2+}$ complex onto the surface of a glassy carbon electrode and indium tin oxide (ITO) optically transparent electrode were performed in acetonitrile at room temperature. Thin film of poly-$>[Fe(3-Br-phen)3]^{2+}$ formed was adherent, electroactive and stably deposited on a glassy carbon disk electrode. The thin metallopolymeric film formed was also confirmed by absorption spectroscopy.

RF 플라즈마를 이용한 유기 EL 소자의 전극형성에 관한 연구 (A Study on the Electrode formation of an Organic EL Devices using the RF Plasma)

  • 이은학
    • 한국전기전자재료학회논문지
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    • 제17권2호
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    • pp.228-235
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    • 2004
  • In this thesis, it is designed efficient electrode formation on the organic luminescent device. ITO electrode is treated with $O_2$plasma. In order to inject hole efficiently, there is proposed the shape of anode that inserted plasma polymerized films as buffer layer between anode and organic layer using thiophene monomer. It is realized efficiently electron injection to aluminum due to introduce the quantum well in cathode. In the case of device inserted the buffer layer by using the plasma poiymerization after $O_2$plasma processing for ITO transparent electrode, since it forms the stable interface and reduce the moving speed of hole, the recombination of hole and electronic ate made in the omitting layer. Compared with the devices without buffer layer, the turn-on voltage was lowered by 1.0(V) doc to the introduction of buffer layer Since the quantum well structure is formed in front of cathode to optimize the tunneling effect, there is improved the power efficiency more than two times.

Transparent Conducting Ga-doped ZnO Thin Film for Flat-Panel Displays with a Sol-gel Spin Coating

  • Nam, Gil-Mo;Kwon, Myoung-Seok
    • Journal of Information Display
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    • 제9권3호
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    • pp.8-11
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    • 2008
  • A novel non-alkoxide sol-gel process for synthesizing Ga-doped ZnO thin film on glass was derived for possible use as a transparent electrode in flat-panel displays, using zinc acetate dehydrate as the starting material. The structural and electrical properties of thin films have been characterized as functions of Ga addition and post-heat-treatments. Their carrier density, Hall mobility, and optical transmittance were measured and discussed herein to explain the characteristics of the sol-gel-derived Ga-doped ZnO thin film on glass.

RF 마그네트론 스퍼터로 증착시킨 ITO 박막의 열화 특성에 관한 연구 (Degradation characteristics of ITO thin film deposited by RF magnetron sputter)

  • 김용남;박정현;신현규;송준광;이희수
    • 한국재료학회:학술대회논문집
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    • 한국재료학회 2003년도 추계학술발표강연 및 논문개요집
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    • pp.234-234
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    • 2003
  • Indium tin oxide(ITO) is an advanced ceramic material with many electronic and optical applications due to its high electrical conductivity and transparency to light ITO thin films are used in transparent electrodes for display devices, transparent coatings for solar energy heat mirrors and windows films in n-p heterojunction solar cells, etc. Almost all display devices were fabricated on transparent ITO electrode substrates. There are several factors that cause decay in the efficiency and the failure of display devices. The degradation or damage of ITO is one of the main factors. Under normal operating conditions, the electric fold required for the operation of display devices is very high As a high electric field induces the joule heat, the degradation of the ITO thin film may be expected. Therefore, it is worthy to investigate the thermal and electrical effect on ITO thin films.

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플렉서블 일렉트로닉스용 투명합성전극 기술 동향 (Transparent Composite Electrodes Technology for Flexible Electronics)

  • 조경익;구재본;추혜용
    • 전자통신동향분석
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    • 제28권5호
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    • pp.34-42
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    • 2013
  • 대면적 태양전지와 디스플레이용 투명전극으로 지금까지는 투명전도성산화물(TCO: Transparent Conductive Oxide)이 일반적으로 사용되어 왔지만, 성능이 향상된 새로운 소자가 등장함에 따라 현재보다 우수한 광학 특성을 가지면서 낮은 전기저항을 갖는 새로운 투명전극을 개발하기 위한 관심이 집중되고 있다. 다양한 종류의 차세대 투명전극 기술 중 현재 응용 가능성이 가장 높은 투명합성전극(TCE: Transparent Composite Electrode, TCO/금속/TCO 구조) 기술은 단일 층 TCO를 사용하는 것보다 우수한 전기 광학적 특성을 보여주고, 더구나 플라스틱 기판 위에 저온에서도 공정이 가능하기 때문에 새로운 투명전극 기술로 부상하게 되었다. 본고에서는 투명합성전극 기술에 대해 소재의 선택, 전기 광학적 특성, 기계적 열적 습도 안정성과 소자 응용 관련 주요 현황에 대해 살펴보고자 한다.

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표면 텍스쳐된 ZnO:Al 투명전도막 증착 및 특성 (The Deposition and Properties of Surface Textured ZnO:Al Films)

  • 유진수;이정철;김석기;윤경훈;박이준;이준신
    • 대한전기학회논문지:전기물성ㆍ응용부문C
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    • 제52권9호
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    • pp.378-382
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    • 2003
  • Transparent conductive oxides (TCO) are necessary as front electrode for most thin film solar cell. In our paper, transparent conducting aluminum-doped Zinc oxide films (ZnO:Al) were prepared by rf magnetron sputtering on glass (Corning 1737) substrate as a variation of the deposition condition. After deposition, the smooth ZnO:Al films were etched in diluted HCI (0.5%) to examine the electrical and surface morphology properties as a variation of the time. The most important deposition condition of surface-textured ZnO films by chemical etching is the processing pressure md the substrate temperature. In low pressures (0.9mTorr) and high substrate temperatures ($\leq$$300^{\circ}C$), the surface morphology of films exhibits a more dense and compact film structure with effective light-trapping to apply the silicon thin film solar cells.