• Journal of Information Display
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• v.11 no.4
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• pp.160-164
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• 2010

Organic light-emitting devices (OLEDs) have shown superior characteristics and are expected to dominate the nextgeneration flat-panel displays. Active-matrix organic light-emitting diode (AMOLED) displays, however, have stringent demands on the performance of the backplane. In this paper, the development of thin-film transistors (TFTs) based on indium gallium zinc oxide (IGZO) on both Gen 1 and 6 glasses, and their decent characteristics, which meet the AMOLED requirements, are shown. Further, several display prototypes (e.g., 2.4" AMOLED, 2.4" transparent AMOLED, and 32" AMLCD) using IGZO TFTs are demonstrated to confirm that they can indeed be strong candidates for the next-generation TFT technology not only of AMOLED but also of AMLCD (active-matrix liquid crystal display).

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2008.11a
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• pp.45-45
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• 2008

In recent years, new materials and technology has been developed using single-walled carbon nanotubes (SWCNTs) as an alternative to indium tin oxide (ITO) to fulfil the requirements towards novel technological drive. These technologies offer products having a broad range of conductivity, excellent transparency, neutral color tone, good adhesion, abrasion resistance as well as mechanical robustness. In addition, SWCNTs can be solution processed to replace the sophisticated vacuum techniques at high temperatures. In the present work, transparent conducting films were fabricated from the purified SWCNTs. Dispersion of purified SWCNTs was accomplished in 1,2-dichlorobenzene without using surfactants or polymers following ultrasonic process. We achieved coating of nanotubes film on poly ether suiphone (PES) for an average sheet resistance ~110 ${\Omega}/{\Box}$ of optical transmittance 80% at 550 nm. Conventional spin coating method was followed to fabricate films from the purified and dispersed nanotubes solution. The results will be presented.

• 한국정보디스플레이학회:학술대회논문집
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• 2008.10a
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• pp.620-621
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• 2008

Transparent electronics has been one of the key terminologies forecasting the ubiquitous technology era. Several researchers have thus extensively developed transparent oxide-based thin-film transistors (TFTs) on glass and plastic substrates although in general high voltage operating devices have been mainly studied considering transparent display drivers. However, low voltage operating oxide TFTs with transparent electrodes are very necessary if we are aiming at logic circuit applications, for which transparent complementary or one-type channel inverters are required. The most effective and low power consuming inverter should be a form of complementary p-channel and n-channel transistors but real application of those complementary TFT inverters also requires electrical- and even photo-stabilities. Since p-type oxide TFTs have not been developed yet, we previously adopted organic pentacene TFTs for the p-channel while ZnO TFTs were chosen for n-channel on sputter-deposited $AlO_x$ film. As a result, decent inverting behavior was achieved but some electrical gate instability was unavoidable at the ZnO/$AlO_x$ channel interface. Here, considering such gate instability issues we have designed a unique transparent complementary TFT (CTFTs) inverter structure with top n-ZnO channel and bottom p-pentacene channel based on 12 nm-thin nano-oxide/self assembled monolayer laminated dielectric, which has a large dielectric strength comparable to that of thin film amorphous $Al_2O_3$. Our transparent CTFT inverter well operate under 3 V, demonstrating a maximum voltage gain of ~20, good electrical and even photoelectric stabilities. The device transmittance was over 60 % and this type of transparent inverter has never been reported, to the best of our limited knowledge.

• Journal of Information Display
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• v.2 no.3
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• pp.39-43
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• 2001

The glass compositions of $PbO-SiO_2-B_2O_3$ system and $P_2O_5-PbO-ZnO$ system for the transparent dielectric materials for front panel and $P_2O_5$-ZnO-BaO and $SiO_2-ZnO-B_2O_3$ for the reflective dielectric materials for back panel of PDP (Plasma Display Panel) were investigated. As a result, transparent dielectric materials for front panel showed good dielectric properties, high transparency, and proper thermal expansion matching to soda lime glass substrate. And the reflective dielectric layers for back panel were prepared from two series of parent glass and oxide filler. It was found that these glassceramics are useful materials for dielectric layers in PDP device, as they have similar thermal expansion to soda-lime glass plate, high reflectance, and low sintering temperature. In particular, the addition of $BPO_4$ and $TiO_2$ as fillers to $SiO_2-ZnO-B_2O_3$ system is considered to be the most effective for acquiring good properties of lower dielectric layer for PDP device.

• 한국정보디스플레이학회:학술대회논문집
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• 2003.07a
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• pp.444-447
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• 2003

A flat panel field sequential 3D display can be made by illuminating a ferroelectric liquid crystal display with scanning illumination passed through a transparent slab embossed with a grating. The concept is expected to enable wide fields of view, sharp discrimination between views, little blurring at depth, and no repetition of views.

• 한국정보디스플레이학회:학술대회논문집
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• 2007.08b
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• pp.1273-1276
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• 2007

We provide a newly developed dry etching process for the fabrication of ZnO-based oxide TFTs. The etching characteristics of ZnO (active layer) and $Al_2O_3$ (gate insulator) thin films were systematically investigated when the etching gas mixtures and their mixing ratios were varied in the heliconplasma etching system.

• 한국정보디스플레이학회:학술대회논문집
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• 2007.08a
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• pp.897-899
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• 2007

Transparent electrodes for a flexible display based on the liquid crystal (LC) were formed by carbon nanotubes (CNTs) on polyethylene terephthalate (PET) substrates. The thin multi wall carbon nanotubes (t-MWNTs) networks for electrodes were obtained by filtration- transfer method from welldispersed CNTs solution.

• 한국정보디스플레이학회:학술대회논문집
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• 2008.10a
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• pp.1621-1624
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• 2008

Transparent ac-PDP test panel was prepared via a combination of materials including ITO sustaining electrodes, thin film dielectric layer and nano-sized phosphor powders. The thin film dielectric layer was prepared by E-beam evaporation process and phosphor layer was deposited on metal mesh pattern by electrophoretic deposition process. The optical transmittance and luminance of the panel indicated that full color transparent ac-PDP is feasible with the approach.

• 한국정보디스플레이학회:학술대회논문집
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• 2005.07b
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• pp.1248-1251
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• 2005

In PDP, a transparent dielectric is formed on a front glass substrate so as to cover bus electrodes (Ag). During the fabrication process, sometimes, a transparent dielectric reacts with bus (Ag) electrode in the range of $560-600^{\circ}C$, and the reaction gives the dielectric its yellow coloration, what is called "yellowing phenomena". In this paper, we investigated the reaction between bus electrode and transparent dielectric covered with different frit content in Ag paste.

• 한국정보디스플레이학회:학술대회논문집
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• 2009.10a
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• pp.482-485
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• 2009

We have fabricated transparent white organic light emitting diodes (WOLEDs) for lighting application. The structure property relationship of hybrid WOLEDs has been investigated and optimized devices showed high efficiency. Introduction of transparent cathode of LiF/Al/Ag into the hybrid WOLED led highly efficient WOLED with good transparency.