• Korean Journal of Materials Research
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• v.17 no.10
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• pp.516-520
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• 2007

Indium tin oxide, which is used as transparent conducting layer in flexible device, is deposited on PET film by a magnetron sputtering in 300 mm wide roll-to-roll process (vacuum web coating). Sheet resistance, specific resistance and transmittance is differed by sputtering parameters such as working pressures, oxygen partial pressure, and thickness of ITO layer. ITO layer is deposited about 90 nm at roll speed of 0.24 m/min and its sputtering power is 3 kW. From the XRD spectrum deposited ITO layer is verified as amorphous. Under working pressure varied from $3{\times}10^{-4}\;Torr$ to $2{\times}10^{-3}\;Torr$, sheet resistance is lowest at the working pressure of $1{\times}10^{-3}\;Torr$ and its value is from $110\;{\Omega}/{\square}$ to $260\;{\Omega}/{\square}$ at the thickness of 90 nm. Oxygen partial pressure also varies sheet resistance and is optimized at the regime from 0.2% ($1.8{\times}10^{-6}\;Torr$) to 0.6% ($6{\times}10^{-6}\;Torr$). In this oxygen partial pressure sheet resistance is lower than $150\;{\Omega}/{\square}$. As ITO layer thickness increases, sheet resistance decreases down to $21\;{\Omega}/{\square}$ and specific resistance is about $7.5{\times}10.4{\Omega}cm$ in 340 nm thickness ITO layer. Transmittance is measured at the wavelength of 550 nm and is about 90% for 180 nm thickness ITO/PET.

• Journal of the Korean institute of surface engineering
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• v.47 no.5
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• pp.239-243
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• 2014

The electrical and optical properties of amorphous In-Tin-Zinc-Oxide(ITZO) deposited at room temperature using rf-magnetron sputtering were investigated. The amorphous ITZO thin films were obtained at the composition of In:Sn:Zn = 6:2:2, 4:3:3, and 2:4:4, but the ITZO (8:1:1) showed a crystalline phase of bixbyite structure of In2O3. The resistivity of ITZO could be controlled by oxygen pressure in the sputtering ambient. The resistivity of post-annealed ITZO thin films exhibited the dependence on the amount of Indium. Optical energy band gap and transmittance increased as the amount of indium in ITZO increased. For the device application with ITZO, the bottom-gated thin-film transistor using ITZO as a active channel layer was fabricated. It showed a threshold voltage of 1.42V and an on/off ratio of $5.63{\times}10^7$ operated with saturation field-effect mobility of $14.2cm^2/V{\cdot}s$.

• Journal of the Korea Computer Graphics Society
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• v.25 no.3
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• pp.31-41
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• 2019

A fog screen consists of tiny water drops and the viewers see the image transmitted through the fog screen. In contrast to ordinary screens, the viewers can see the actors passing through the image on the fog screen on stage. In this paper, we describe methods to build a top-down fog screen where fog particles generated in top space fall by gravity forming a flat vertical screen. We use a fog generation technique in which fog particles come out of the water surface when ultrasound vibrators immersed in water tank vibrate. We describe how fog particles form a flat screen while coming out of the fog passage tunnel, by generating guiding winds beside the fog screen. This technique utilizes the principle that fog particles are generated on the surface of a water tank by an ultrasonic vibrator placed in a water tank. The technique of forming a guiding wind on both sides of the passage exit where the fog comes out and the design and manufacturing method of the fog screen generating device are described so that the generated fog group can maintain one plane.

• Journal of the Korea Institute of Information and Communication Engineering
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• v.26 no.6
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• pp.897-906
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• 2022

In this paper, we propose a novel MAC protocol based on the harmonic transmission of ACK, called HAT-LoRa, for improving the reliability and the utilization in multiple gateway LoRa Networks. LoRa is basically vulnerable to collision due to the primitive pure ALOHA-like MAC. Whereas data frame delivery can be guaranteed by the transparent bridge of multiple receiving gateways, ACK is still transmitted by a single gateway in LoRa Network. HAT-LoRa provides the augmented reception opportunity of ACK via the simultaneous transmissions of identical ACK in multiple spreading factors. The proposed method reduces the expected transmission times of ACK double gateway environment as well as single gateway environment, by 55 and 60% in maximum, by 35% and 40% in average, in a single- and double-gateway environment, respectively. Especially, it outperforms under the environment where the distance between end device and gateways are similar to each other.

• Journal of the Korean Society of Manufacturing Process Engineers
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• v.21 no.1
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• pp.95-101
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• 2022

This paper proposes a method to process the shape of an optical transmission road and attempts to determine the most suitable single processing method for an acrylic plate optical transmission road. In addition, by manufacturing an automatic pattern processing device to generate certain shapes on the acrylic plate at regular intervals, and measuring the illuminance of the patterned acrylic plate optical transmission road, the measured illuminance was confirmed to fall under the KS illuminance values presented in Table 1. In conclusion, when an incident light of approximately 20,000 lx is applied, the transmission illumination is approximately 200 lx, which represents a transmission rate of approximately 1% for incident light and corresponds to the KS illumination criterion F. Additionally, the right-angle triangular pyramid base size (A) processed at a temperature of 350 ℃ for one second was 2 mm, exhibiting the largest transmission illumination of 280 lx. When the transparent acrylic plate was set to a constant size of 1.6 mm at the bottom of the right-angle triangular pyramid, the fastest response occurred at a processing tip temperature of 350 ℃ (0.04 s). On the other hand, it took 10 s to process the size of the bottom of the right-angled triangular pyramid at a temperature of 200 ℃ to 1.6 mm, and it was confirmed that the optical transmission efficiency was significantly reduced because of the burr that occurred at this time.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.36 no.2
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• pp.191-196
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• 2023

In this paper, for the application of ultrasonic cleaners for cleaning dentures and transparent braces, Pb(Mn_1/3Nb_2/3)O₃-Pb(Ni_1/3 Nb_2/3)O₃-Pb(Zr,Ti)O₃ [PMN-PNN-PZT] system ceramics were manufactured and their dielectric and piezoelectric properties were investigated. Overall the best properties suitable for the device applications such as ultrasonic cleaner were obtained from the ceramics sintered at 920℃: bulk density of 7.8 g/cm³, the dielectric constant (ε_r) of 1,689, piezoelectric charge constant (d₃₃) of 433 pC/N, planar electromechanical coupling factor (k_p) of 0.64, mechanical quality factor (Qm) of 835, S₁₁^E of 13.37 (10^-12 N/m²), and Curie temperature of 315℃ By using the physical properties of this composition, the ultrasonic cleaner was designed and simulated using the commercial ATILA software. For the three-layered ceramics with the dimension of 25 mm × 25 mm × 2.5mm, an excellent displacement of 8.998 10^-3 m) and the sound pressure of 147.68 dB were recorded.

• The Journal of the Korea institute of electronic communication sciences
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• v.19 no.1
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• pp.39-46
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• 2024

In this study, GTZO(Ga-Ti-Zn-O) thin films were deposited at various working pressures (1~7mTorr) by RF magnetron sputtering to examine the structural, electrical, and optical properties. All GTZO thin films exhibited c-axis preferential growth regardless of working pressure, the GTZO thin film deposited at 1mTorr showed the most excellent crystallinity having 0.38˚ of FWHM. The average transmittance in the visible light region (400~800nm) showed 80% or more regardless of the working pressure. We could observed the Burstein-Moss effect that carrier concentration decrease with the increase of working pressure and thus the energy band gap is narrowed. Figure of merits of GTZO thin film deposited at 1mTorr showed the highest value of 9.08 × 103 Ω-1·cm-1, in this case resistivity and average transmittance in the visible light region were 5.12 × 10-4 Ω·cm and 80.64%, respectively.

• Smart Media Journal
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• v.13 no.4
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• pp.76-85
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• 2024

In this paper, we propose a system that improves the data integrity of IoT(Internet of Things) devices in the virtual environment by combining Hyperledger Indy and MQTT(Message Queuing Telemetry Transport). The system complements the limitations of the centralized system by realizing a DPKI(Decentralized Public Key Infrastructure) structure that utilizes a distributed network in publish-subscribe(pub/sub) pattern communication. Digital signature technology was applied to ensure the data integrity of IoT devices and communication scenarios between the four core components of the client, IoT device, broker, and blockchain, as well as a topic structure using a decentralized identifier to ensure safety in the virtual environment. We present a systematic method for transparent data exchange. To prove the performance of the proposed system, this paper conducted experiments on four scenarios and evaluated communication performance in a virtual environment. The experimental results confirmed that the proposed system provides a reliable IoT data communication structure in a virtual environment.

• Applied Chemistry for Engineering
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• v.25 no.5
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• pp.447-454
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• 2014

Organic solar cells (OSCs) have intensively studied in recent years due to their advantages such as cost effectiveness and possibility of applications in flexible devices. In spite of the high power conversion efficiency (PCE) of 10 %, the OSCs still have a draw back of their low environmental stability due to the oxidization of aluminum cathode and etching of transparent conducting oxide as electrode. To solve these problems, the inverted structured OSCs (I-OSCs) having greatest potential for achieving an improvement of device performances are suggested. Therefore, there are a lot of studies to develope of interface layer based on organic/inorganic materials for the electron transport layer (ETL) and passivation layer, significant advancements in I-OSCs have driven the development of interface functional materials including electron transport layer. Recent efforts to employing 2D/3D zinc oxide (ZnO) based ETL into I-OSCs have produced OSCs with a power conversion efficiency level that matches the efficiency of ~9 %. In this review, the technical issues and recent progress of ZnO based ETL in I-OSCs to enhancement of device efficiency and stability in terms of materials, process and characterization have summarized.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2009.11a
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• pp.5-5
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• 2009

Thin-film-transistors (TFTs) that can be prepared at low temperatures have attracted much attention because of the great potential for transparent and flexible electronics. One of the mainstreams in this field is the use of organic semiconductors such as pentacene. But device performance of the organic TFTs is still limited due to low field-effect mobility and rapid degradation after exposing to air. Alternative approach is the use of amorphous oxide semiconductors as a channel. Amorphous oxide semiconductors (AOSs) based TFTs showed the fast technological development, because AOS films can be fabricated at room temperature and exhibit the possibility in application like flexible display, electronic paper, and larges solar cells. Among the various AOSs, a-IGZO has lots of advantages because it has high channel mobility, uniform surface roughness and good transparency. [1] The high mobility is attributed to the overlap of spherical s-orbital of the heavy post-transition metal cations. This study demonstrated the effect of the variation in channel thickness from 30nm to 200nm on the TFT device performance. When the thickness was increased, turn-on voltage and subthreshold swing was decreased. The a-IGZO channels and source/drain metals were deposited with shadow mask. The a-IGZO channel layer was deposited on $SiO_2$/p-Si substrates by RF magnetron sputtering, where RF power is 150W. And working pressure is 3m Torr, at $O_2/Ar$ (2/28 sccm) atmosphere. The electrodes were formed with electron-beam evaporated Ti (30 nm) and Au (70 nm) bilayer. Finally, Al (150nm) as a gate metal was thermal-evaporated. TFT devices were heat-treated in a furnace at 250 $^{\circ}C$ and nitrogen atmosphere for 1hour. The electrical properties of the TFTs were measured using a probe-station. The TFT with channel thickness of 150nm exhibits a good subthreshold swing (SS) of 0.72 V/decade and on-off ratio of $1{\times}10^8$. The field effect mobility and threshold voltage were evaluated as 7.2 and 8 V, respectively.