• Journal of the Korean Institute of Illuminating and Electrical Installation Engineers
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• v.23 no.1
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• pp.78-84
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• 2009

In this paper, ZnO:Al thin film was deposited on polyethylene terephthalate(PET) substrate by capacitively coupled r. f. magnetron sputtering method from a ZnO target mixed with 2wt[%] Al2O3 to investigate the possible application of ZnO:Al film as a transparent conducting electrode for film typed DSCs. The effect of substrate bias on the electrical properties and film structure were studied. The results showed that a positive bias applied to the substrate during sputtering contributed to an improvement of electrical properties of the film by attracting electrons in the plasma to bombard the growing films. These bombardments provided additional energy to the growing ZnO:Al film on the substrate, resulting in significant variations in film structure and electrical properties. Electrical resistivity of the film decreases significantly as the positive bias increases up to +30[V] However, as the positive bias increases over +30[V], the resistivity decreases. The transmittance varies little as the substrate bias is increased from 0 to +60[V], and as r. f. powers increases from 160[W] to 240[W]. The film with electrical resistivity as low as $1.8{\times}10^{-3}[{\Omega}-cm]$ and optical transmittance of about 87.8[%] were obtained for 1,012[nm] thick film deposited with a substrate bias of +30[V].

• The Journal of the Korea institute of electronic communication sciences
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• v.18 no.5
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• pp.797-802
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• 2023

We prepared GZO (Ga₂O₃ : 5 wt %, ZnO : 95 wt %) thin film on glass substrate according to the substrate temperature using the pulsed laser deposition method and investigated electrical and optical properties of the thin film. Through the XRD measurements, their were confirmed that all GZO thin films grew preferentially in c-axis and the GZO thin film deposited at 300℃ showed the best crystallinity with a FWHM of 0.38°. As the substrate temperature increased from 150 to 300℃, the resistivity of GZO thin film tend to decrease, while the average transmittance in the visible light region was not significantly affected. The figure of merit of the GZO thin film deposited at 300℃ was 2.05×10⁴ Ω^-1·cm^-1, which was the best value, the resistivity and the average transmittance in the visible light region were 3.72 × 10^-4 Ω·cm and 87.71 %, respectively. In this study, it was found that GZO thin film is very promising material for transparent conducting thin film.

• Macromolecular Research
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• v.15 no.2
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• pp.154-159
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• 2007

Polyaniline (PANI) nanospheres, 4 run in diameter, were fabricated by the microemulsion polymerization of octyltrimethyl ammonium bromide (OTAB). The size of the PANI nanoparticles could be controlled as functions of the surfactant concentration, surfactant spacer length and polymerization temperature. The diameter of the PANI nanospheres decreased with increasing surfactant concentration and decreasing temperature. The PANI nanoparticles revealed enhanced conductivity compared to conventional bulk PANIs. In addition, the PANI nanoparticles could be applied as optically transparent conducting materials due to their high conductivity and the nanosize effect. With 9 wt% PANI in the PC matrix, the PANI/PC film exhibited a conductivity of $8.9\times10^{-3}S/cm$ and transparency exceeding 95% over the entire visible light range.

• Journal of the Korean institute of surface engineering
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• v.28 no.1
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• pp.46-54
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• 1995

An electrochromic(EC) cell was constructed using $WO_3$ as a electrochromic material and NiO as a counter electrode, deposited onto ITO-coated glass by the implementation of electron beam evaporation. The electrolytic media were both lithium and proton conducting polymers such as poly-acrylonitrile(PAN)-$LiClO_4$, poly-ethylene oxide(PEO)-$LiClO_4$, poly-vinyl butyral(PVB)-LiCl and PVB-H$_3$$PO_4$. Potentiodynamic cycling of the cells using PAN-$LiClO_4$, or PVB-$H_3$$PO_4$ electrolyte yielded a transmission variation of more than 40% at the wavelength of 632.8 nm within less than 10 sec response time at room temperature. These results indicate that these electrolytes, transparent in gel type, are premising for the application in large area electrochromic windows.

• Journal of Information Display
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• v.12 no.2
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• pp.97-99
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• 2011

We report flexible, bistable cholesteric displays utilizing polyester (PET) substrates with printed internal black electrodes. The black electrodes consist of carbon ink dispersed in butyl carbitol using a patented roll-to-roll gravure-offset printing. A transparent conducting polymer printed on PET serves as the counter electrode. The electro-optic material is a chiral nematic mixture dispersed in a low-concentration polymer binder. The device can be switched between scattering (black) and reflective (vibrant green) states upon application of an electric pulse. The internal black electrode enhances the contrast of the display and simplifies the roll-to-roll manufacture of flexible displays.

• Current Applied Physics
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• v.18 no.12
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• pp.1583-1591
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• 2018

We analysed perovskite $CH_3NH_3PbI_{3-x}Cl_x$ inverted planer structure solar cell with nickel oxide (NiO) and spiroMeOTAD as hole conductors. This structure is free from electron transport layer. The thickness is optimized for NiO and spiro-MeOTAD hole conducting materials and the devices do not exhibit any significant variation for both hole transport materials. The back metal contact work function is varied for NiO hole conductor and observed that Ni and Co metals may be suitable back contacts for efficient carrier dynamics. The solar photovoltaic response showed a linear decrease in efficiency with increasing temperature. The electron affinity and band gap of transparent conducting oxide and NiO layers are varied to understand their impact on conduction and valence band offsets. A range of suitable band gap and electron affinity values are found essential for efficient device performance.

• Proceedings of the Korean Society of Precision Engineering Conference
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• 2012.05a
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• pp.65-66
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• 2012

• Proceedings of the Materials Research Society of Korea Conference
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• 2007.11a
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• pp.69.1-69.1
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• 2007

• Proceedings of the Materials Research Society of Korea Conference
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• 2007.11a
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• pp.49.1-49.1
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• 2007

• 한국정보디스플레이학회:학술대회논문집
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• 2008.10a
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• pp.831-833
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• 2008

150 nm thick Ga-doped ZnO thin film, which was deposited by a sputtering process, was wet-chemically etched by using various organic acids such as oxalic, citric and formic acid. Wet etch parameters including etchant concentration and temperature are investigated for each etchant, and their effects on the etch rate and the feature of edge line are compared.