• 한국재료학회지
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• 제20권7호
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• pp.351-355
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• 2010

Transparent conducting aluminum-doped ZnO thin films were deposited using a sol-gel process. In this study, the important deposition parameters were investigated thoroughly to determine the appropriate procedures to grow large area thin films with low resistivity and high transparency at low cost for device applications. The doping concentration of aluminum was adjusted in a range from 1 to 4 mol% by controlling the precursor concentration. The annealing temperatures for the pre-heat treatment and post-heat treatment was $250^{\circ}C$ and 400-$600^{\circ}C$, respectively. The SEM images show that Al doped and undoped ZnO films were quite uniform and compact. The XRD pattern shows that the Al doped ZnO film has poorer crystallinity than the undoped films. The crystal quality of Al doped ZnO films was improved with an increase of the annealing temperature to $600^{\circ}C$. Although the structure of the aluminum doped ZnO films did not have a preferred orientation along the (002) plane, these films had high transmittance (> 87%) in the visible region. The absorption edge was observed at approximately 370 nm, and the absorption wavelength showed a blue-shift with increasing doping concentration. The ZnO films annealed at $500^{\circ}C$ showed the lowest resistivity at 1 mol% Al doping.

• 한국전기전자재료학회논문지
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• 제25권7호
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• pp.491-495
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• 2012

The effects of various buffer layers on the $In_2O_3$ transparent conducting films grown on glass substrates by radio-frequency reactive magnetron sputtering were investigated. The $In_2O_3$ thin films were deposited at $400^{\circ}C$ of growth temperature and 100% of oxygen flow rate. The optical, electrical, and structural and morphological properties of the $In_2O_3$ thin films subjected to buffer layers were examined by using ultraviolet-visible spectrophotometer, Hall-effect measurements, and X-ray diffractometer, respectively. The properties of $In_2O_3$ thin films showed different results, depending on the type of buffer layer. As for the $In_2O_3$ thin film deposited on ZnO buffer layer, the average transmittance was 89% and the electrical resistivity was $7.4{\times}10^{-3}\;{\Omega}cm$. The experimental results provide a way for growing the transparent conducting film with the optimum condition by using an appropriate buffer layer.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2008년도 추계학술대회 논문집 Vol.21
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• pp.45-45
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• 2008

In recent years, new materials and technology has been developed using single-walled carbon nanotubes (SWCNTs) as an alternative to indium tin oxide (ITO) to fulfil the requirements towards novel technological drive. These technologies offer products having a broad range of conductivity, excellent transparency, neutral color tone, good adhesion, abrasion resistance as well as mechanical robustness. In addition, SWCNTs can be solution processed to replace the sophisticated vacuum techniques at high temperatures. In the present work, transparent conducting films were fabricated from the purified SWCNTs. Dispersion of purified SWCNTs was accomplished in 1,2-dichlorobenzene without using surfactants or polymers following ultrasonic process. We achieved coating of nanotubes film on poly ether suiphone (PES) for an average sheet resistance ~110 ${\Omega}/{\Box}$ of optical transmittance 80% at 550 nm. Conventional spin coating method was followed to fabricate films from the purified and dispersed nanotubes solution. The results will be presented.

• 대한전기학회:학술대회논문집
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• 대한전기학회 2008년도 제39회 하계학술대회
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• pp.1352-1353
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• 2008

In this study, aluminium - doped zinc oxide (ZnO:Al) transparent conducting film was deposited on PET(polyethylen terephthalate) substrate by r.f. magnetron sputtering method. PET substrate was surface-treated in an atmospheric pressure DBD(dielectric barrier discharge) plasma to increase deposition rate and to improve electrical propesties. Morphological changes by DBD plasma were obsered using contact angle measurement. The contact angle of water on PET was reduced from 62$^{\circ}$ to 42$^{\circ}$ by DBD plasma surface treatment. The plasma treatment also increased deposition rate and electrical propesties. The electrical resistivity as low as $4.97{\times}10^{-3}[{\Omega}-cm]$ and the deposition rate of 234[${\AA}$-m/min] were obtained in ZnO:Al film with surface treatment time of 5min, and 20min., respectively.

• 한국재료학회지
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• 제17권7호
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• pp.376-381
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• 2007

Fluorine-doped tin oxide (FTO) thin film was coated on aluminosilicate glass at $450^{\circ}C$ by spray pyrolysis method. In the range of 0-2.7 molar ratio of F/Sn, the variations of electrical conductivity and visible light transmission were investigated. At the F/Sn ratio of 1.765, the film showed the lowest electrical resistivity value of $3.0{\times}10^{-4}{\Omega}\;cm$, the highest carrier concentration of $2.404{\times}10^{21}/cm^3$, and about $8\;cm^2/V{\cdot}sec$ of electronic mobility. The FTO film showed a preferred orientation of (200) plane parallel to the substrate. X-ray photoelectron spectroscopy analysis results indicated that the contents of $Sn^{4+}-O$ bonding are the highest at 1.765 of F/Sn molar ratio.

• 한국재료학회지
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• 제11권1호
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• pp.15-19
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• 2001

유리기판 위에 열화학증착법으로 투명전도성 산화주석막을 제조하였다. 박막은 원료물질로 tetramethyltin(TMT), 산화제로 산소나 오존이 포함된 산소의 혼합물로부터 제조되었다 제조된 박막은 기판온도에 따라 물성이 크게 변하였고 최적화된 박막은 TMT 유랑 8 sccm, 산소유량 150 sccm, 기판온도 $380^{\circ}C$에서 제조되었다. 오존을 사용함으로서 기판온도를 약 $180^{\circ}C$정도 낮출 수 있었고 비저항은 ~$10^{ -2}{\Omega}cm$에서 ~$10^{-3}{\Omega}cm$으로 감소시킬 수 있었다.

• 한국진공학회지
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• 제7권1호
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• pp.43-50
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• 1998

원격플라즈마화학증착(RPCVD)에 의하여 파이렉스 유리 기판 위에 투명전도성 산화 주석막을 제조하였다. RPCVD공정의 주요한 조절변수는 증착시간, 사메틸주석, 산소 및 아 르곤의 유속, 라디오 주파수 출력, 및 기판온도를 포함했다. 양질의 산화주석막을 제조하고 RPCVD공정을 보다 잘 이해하기 위하여 이들 파라미터에 대한 증착속도, 전기적 저항, 광 학적 투과도 및 결정구조의 의존성을 체계적으로 살펴보았다. 산화주석막의 성질에 미치는 이들 파라미터의 영향은 복잡하게 서로 연관되어 있다. 최적화된 증착조건에서 제조된 산화 주석막은 102$\AA$/min의 증착속도, $9.7\times 10^{-3}\Omega$cm의 비저항 및 ~80%의 가시선 투과도를 나 타냈다.

• 전기화학회지
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• 제13권3호
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• pp.175-180
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• 2010

전도성 폴리아닐린을 합성하여 용액 공정을 적용한 유기박막 투명전극을 제조, 그 특성을 조사하였다. 용액에 분산된 폴리아닐린을 스핀코팅하여 얻어진 박막 전극은 200 nm의 두께에서 $380{\Omega}/m^2$ 의 면저항을 보였고, 450 nm 이상의 파장에서 85% 이상의 균일한 광투과성을 나타내었다. 전극의 $130^{\circ}C$이상의 온도변화에서는 비교적 높은 저항변화율이 관찰되었다.

• 반도체디스플레이기술학회지
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• 제6권3호
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• pp.35-39
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• 2007

ITO(Indium Tin Oxide) is the most attractive TCO(Transparent Conducting Oxide) materials for LCD, PDP, OLEDs and solar cell, because of their high optical transparency and electrical conductivity. However due to the shortage of indium resource, hard processing at low temperature, and decrease of optical property during hydrogen plasma treatment, their applications to the display industries are limited. Thus, recently the Al-doped ZnO(AZO) has been studied to substitute ITO. In this study, we have investigated the effect of different substrate temperature(RT, $150^{\circ}C$, $225^{\circ}C$, $300^{\circ}C$) and working pressure(10 mTorr, 20 mTorr, 30 mTorr, 80 mTorr) on the characteristics of AZO(2 wt.% Al, 98 wt.% ZnO) films deposited by RF-magnetron sputtering. We have obtained AZO thin films deposited at low temperature and all the deposited AZO thin films are grown as colunmar. The average transmittance in the visible wavelength region is over 80% for all the films and transmittance improved with increasing substrate temperature. Electrical properties of the AZO films improved with increasing substrate temperature.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2008년도 하계학술대회 논문집 Vol.9
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• pp.425-425
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• 2008

The transparent conducting oxides(TCOs) are widely used as electrodes for most flat panel display devices(FPDs), electrodes in solar cells and organic light emitting diodes(OLED). Among them, indium oxide materials are mostly used due to its high electrical conductivity and a high transmittance in the visible spectrum. The present study reports on a study of the electrical and optical properties of IGZO thin films prepared on glass and PET substrates by the combinational magnetron sputtering. We use the targets of IZO and Ga2O3 for the deposition process. In some case the deposition process is coupled with the End-Hall ion-beam treatment onto the substrates before the sputtering. In addition we control the deposition rate to optimize the film quality and to minimize the surface roughness. Then we investigate the effects of the Ar gas pressure and RF power during the sputtering process upon the electrical, optical and morphological properties of thin films. The properties of prepared IGZO thin films have been analyzed by using the XRD, AFM, a-step, 4-point probe, and UV spectrophotometer.