• 한국레이저가공학회지
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• 제16권1호
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• pp.5-9
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• 2013

We have successfully formed filament inside of a transparent soda-lime glass using a Ti:sapphire based femtosecond laser. To make filament form, keeping the laser intensity higher than critical intensity is essential. Also each of the machining parameters plays an important role for the formation of filament. In this paper, we study what parameter can possibly influence for formation of filament, and we introduce an application using filamentation by femtosecond laser for transparent material.

• 한국정보통신학회논문지
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• 제17권5호
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• pp.1213-1218
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• 2013

본 연구에서는 고주파 마그네트론 스퍼터링법으로 기판온도 변화에 따른 GZO 박막을 투명 사파이어 기판위에 제작하여, 박막의 전기적 광학적 특성 및 결정화 특성을 조사하였다. 전기적 특성을 조사한 결과, 기판온도 $300^{\circ}C$에서 가장 낮은 $4.18{\times}10^{-4}{\Omega}cm$의 비저항을 나타내었고, 이때의 캐리어 농도는 $6.77{\times}10^{20}cm^{-3}$, 홀 이동도는 $22cm^2/Vs$를 나타내었다. 또한 이 조건에서 가장 큰 c-축 배향성을 얻을 수 있었고, 그 때의 반가폭은 $0.34^{\circ}$이었다. AFM 표면형상에서도 기판온도 $300^{\circ}C$에서 가장 우수한 결정성을 확인하였다. 모든 GZO 박막은 기판온도와 무관하게 가시광 영역에서 80 % 정도의 투과율을 보였고, 광학적 밴드갭은 기판온도가 $300^{\circ}C$ 까지 증가함에 따라 3.52 eV 로 증가하여 blue-shift 의 경향이 관찰되었으며, 벌크 ZnO 의 밴드갭인 3.3 eV 보다 높은 것을 확인하였다. 이는 기판온도 증가에 따른 캐리어 농도의 증가로 에너지 밴드갭이 확장된다는 Burstein-Moss 효과로 설명될 수 있다.

• 한국정밀공학회:학술대회논문집
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• 한국정밀공학회 2006년도 춘계학술대회 논문집
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• pp.209-210
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• 2006

We have successfully termed brown colored patterns inside of a transparent borosilicate glass generally known as BK7, laying the focus of near infrared Ti: sapphire femtosecond laser beam in the bulk BK7 glass. It is important to keep the laser power well below the damage threshold of BK7 in forming the color center. Thanks to the low laser power, there was no laser induced mechanical damage such as cracks or threads in the color formed area. From the absorbance spectrum and its gaussian fitting, we found the band gap of BK7, 4.21eV, and three absorption edges.

• 한국광학회지
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• 제34권6호
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• pp.283-288
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• 2023

본 연구에서는 quartz, sapphire, slide glass와 같이 투명한 기판 위에 (3-mercaptopropyl) trimethoxysilane (MPTMS)를 처리하고 나노미터 두께로 은을 증착하여 형성된 은 나노 박막의 광학적, 전기적 특성을 탐구한다. 기판의 MPTMS 증착에 따라 각각 5, 7, 9, 13 nm 두께를 갖는 은 나노 박막의 표면 형태 변화를 전자현미경을 통해 확인하고, UV-visible 전자기파 영역의 투과 측정 실험을 통해 금속 나노 박막에서 나타나는 국소 표면 플라즈몬에 의한 흡수 효과가 줄어드는 것을 확인하였다. 이는 MPTMS에 의해 나노미터 두께의 금속 박막이 균일하게 형성된 것을 의미한다. 또한 MPTMS 증착 시간을 30분부터 77시간까지 조절함으로써 UV-visible 투과율과 전기전도도 변화를 측정하여 균일한 금속 나노 박막 형성을 위한 MPTMS의 증착 조건에 대해 탐구한다. 본 연구 결과는 투명 기판 위 균일한 금속 나노 박막 형성에 대한 연구 및 고성능 나노 박막 전극 개발 등과 같은 응용 분야에 도움이 될 것이다.

• JSTS:Journal of Semiconductor Technology and Science
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• 제16권1호
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• pp.39-43
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• 2016

The structural, electrical properties of Ga doped MgZnO transparent conductive oxide (TCO) films by ratio-frequency(RF) magnetron sputtering were investigated. Ga doped MgZnO TCO films were deposited on the sapphire substrates at $200^{\circ}C$ varying growth thickness 200 to 600 nm. The optical properties of Ga doped MgZnO TCO films were showed above 85% transmittance from 300 to 1000 nm region. In addition, the current density ($J_{SC}$) of $Cu(In,Ga)Se_2$ (CIGS) solar cells was improved by using the MgZnO:Ga films of 500 nm thickness because of outstanding electrical properties. The $Cu(In,Ga)Se_2$ solar cells with MgZnO:Ga transparent conducing layer yielded an efficiency of 9.8% with current density ($31.8mA/cm^2$), open circuit voltage (540.2 V) and fill factor (62.2) under AM 1.5 illumination.

• 한국레이저가공학회지
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• 제15권3호
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• pp.16-19
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• 2012

We have successfully formed brown colored patterns inside of a transparent borosilicate glass generally known as BK7, laying the focus of near infrared Ti: sapphire femtosecond laser beam in the bulk BK7 glass. It is important to keep the laser power well below the damage threshold of BK7 in forming the color center. According to the low laser power, there was no laser induced mechanical damage such as cracks or threads in the color formed area. From the absorbance spectrum and its gaussian fitting, we found the band gap of BK7, 4.21eV, and three absorption edges.

• 한국재료학회지
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• 제15권8호
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• pp.491-495
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• 2005

(Zn,Mg)O (ZMO) thin films doped with Ga $(0\~0.03mol\%)$ in the target source were prepared by pulsed laser deposition on c-plane sapphire substrates at $500^{\circ}C$, and the effect of Ga contents on the properties of the electrical, optical and crystal properties of the deposited films was investigated. From X-ray diffraction patterns, ZMO film doped with $0.02 mol\%$ Ga showed crystal structure with c-axis preferred orientation, showing only the (0002) and (0004) diffraction peaks. In contrast, ZMO film doped with $Ga=0.03 mol\%$ showed a randomly oriented crystal structure. All the samples were highly transparent, showing the transmittance values of above $85\%$ in the visible region. For all the Ga doped ZMO films, the value of energy band gap was found to be about 3.5 eV, regardless of their Ga contents. From the Hall measurements, the resistivity and the carrier density for the ZMO film doped with $0.01 mol\%$ Ga were about $5\times10^{-4}\Omega-cm$ and $2\times10^{21}cm^{-3}$, respectively.

• 한국광학회지
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• 제33권6호
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• pp.317-323
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• 2022

본 논문에서는 투명한 물질의 두께를 측정하기 위한 방법으로 기하 위상 렌즈 기반의 색공초점 센서를 개발하고, 성능 개선을 위한 보정 방법을 제시한다. 일반적인 색공초점 센서의 복잡한 설계로 인한 한계를 극복하기 위해, 기하 위상 렌즈를 이용하여 전체 시스템의 크기를 줄이고, 시스템 오차를 보상하기 위한 파장 첨두 위치 추출 방법과 계통 오차 제거 방법을 설명한다. 색공초점 센서를 이용하여 투명한 물질의 두께를 측정하기 위한 이론을 설명하고, 이를 사파이어 및 BK7 물질의 두께를 측정함으로써 실험적으로 검증한다. 색공초점 센서를 이용한 두께 측정 방법은 기존의 간섭계 및 공초점 센서의 방법들에 비해 측정 속도가 빠르고, 분산 등에 의한 두께 측정 영역 제한이 없기 때문에 많은 응용이 가능하다.

• 한국진공학회:학술대회논문집
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• 한국진공학회 2016년도 제50회 동계 정기학술대회 초록집
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• pp.283.1-283.1
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• 2016

Tin Oxide(SnO2) has been widely investigated as a transparent conducting oxide (TCO) and can be used in optoelectronic devices such as solar cell and flat-panel displays. It would be applicable to fabricating the wide bandgap semiconductor because of its bandgap of 3.6 eV. In addition, SnO2 is commonly used as gas sensors. To fabricate high quality epitaxial SnO2 thin films, a powder sputtering method was used, in contrast to typical sputtering technique with sintered target. Single crystalline sapphire(0001) substrates were used. The samples were prepared with varying the growth parameters such as gas environment and film thickness. Then, the samples were characterized by using X-ray diffraction, scanning electron microscopy, and atomic force microscopy measurements. We found that the strain evolution of the samples was highly affected by gas environment and growth rate, resulted in the delamination under O2 environment.

• 한국진공학회:학술대회논문집
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• 한국진공학회 2015년도 제49회 하계 정기학술대회 초록집
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• pp.185.2-185.2
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• 2015

Tin Oxide (SnO2) has been widely investigated as a transparent conducting oxide (TCO) and can be used in optoelectronic devices such as solar cell and flat-panel displays. In addition, it would be applicable to fabricating the wide bandgap semiconductor because of its bandgap of 3.6 eV. There have been concentrated on the improvement of optical properties, such as conductivity and transparency, by doping Indium Oxide and Gallium Oxide. Recently, with development of fabrication techniques, high-qulaity SnO2 epitaxial thin films have been studied and received much attention to produce the electronic devices such as sensor and light-emitting diode. In this study, powder sputtering method was employed to deposit epitaxial thin films on sapphire (0001) substrates. A commercial SnO2 powder was sputtered. The samples were prepared with varying the growth parameters such as gas environment and film thickness. Then, the samples were characterized by using XRD, SEM, AFM, and Raman spectroscopy measurements. The details of physical properties of epitaxial SnO2 thin films will be presented.