• 한국기계가공학회지
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• 제16권1호
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• pp.96-101
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• 2017

We have developed a compact desktop-sized nanopatterning system driven by the Roll-to-Roll (R2R) nanoimprinting (NIL) principle. The system realizes the continuous and high-speed stamping of various nanoscale patterns on a large-area flexible substrate without resorting to ponderous and complicated instruments. We first lay out the process principle based on continuous NIL on a UV-curable resin layer using a flexible nanopatterned mold. We then create conceptual and specific designs for the system by focusing on two key processes, imprinting and UV curing, which are performed in a continuous R2R fashion. We build a system with essential components and optimized modules for imprinting, UV curing, and R2R conveying to enable simple but effective nanopatterning within the desktop volume. Finally, we demonstrate several nanopatterning results such as nanolines and nanodots, which are obtained by operating the built desktop R2R NIL system on transparent and flexible substrates. Our system may be further utilized in the scalable fabrication of diverse flexible nanopatterns for many functional applications in optics, photonics, sensors, and energy harvesters.

• 한국진공학회:학술대회논문집
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• 한국진공학회 2014년도 제46회 동계 정기학술대회 초록집
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• pp.463-463
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• 2014

Dye-sensitized solar cells (DSSCs) have generated a strong interest in the development of solid-state devices owing to their low cost and simple preparation procedures. Effort has been devoted to the study of electrolytes that allow light-to-electrical power conversion for DSSC applications. Several attempts have been made to substitute the liquid electrolyte in the original solar cells by using (2,2',7,7'-tetrakis (N,N-di-p-methoxyphenylamine)-9-9'-spirobi-fluorene (spiro-OMeTAD) that act as hole conductor [1]. Although efficiencies above 3% have been reached by several groups, here the major challenging is limited photoelectrode thickness ($2{\mu}m$), which is very low due to electron diffusion length (Ln) for spiro-OMeTAD ($4.4{\mu}m$) [2]. In principle, the $TiO_2$ layer can be thicker than had been thought previously. This has important implications for the design of high-efficiency solid-state DSSCs. In the present study, we have fabricated 3-D Transparent Conducting Oxide (TCO) by growing tin-doped indium oxide (ITO) nanowire (NWs) arrays via a vapor transport method [3] and mesoporous $TiO_2$ nanoparticle (NP)-based photoelectrodes were prepared using doctor blade method. Finally optimized light-harvesting solid-state DSSCs is made using 3-D TCO where electron life time is controlled the recombination rate through fast charge collection and also ITO NWs length can be controlled in the range of over $2{\mu}m$ and has been characterized using field emission scanning electron microscopy (FE-SEM). Structural analyses by high-resolution transmission electron microscopy (HRTEM) and X-Ray diffraction (XRD) results reveal that the ITO NWs formed single crystal oriented [100] direction. Also to compare the charge collection properties of conventional NPs based solid-state DSSCs with ITO NWs based solid-state DSSCs, we have studied intensity modulated photovoltage spectroscopy (IMVS), intensity modulated photocurrent spectroscopy (IMPS) and transient open circuit voltages. As a result, above $4{\mu}m$ thick ITO NWs based photoelectrodes with Z907 dye shown the best performing device, exhibiting a short-circuit current density of 7.21 mA cm-2 under simulated solar emission of 100 mW cm-2 associated with an overall power conversion efficiency of 2.80 %. Finally, we achieved the efficiency of 7.5% by applying a CH3NH3PbI3 perovskite sensitizer.

• 한국해양학회지:바다
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• 제2권1호
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• pp.8-13
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• 1997

천부 탄성파 단면도와 해저 퇴적물 자료들을 이용하여 한반도 남동 내대륙붕 해역에 분포하는 홀로세 뻘질 퇴적물의 발달양상을 분석하였다. 홀로세 뻘질 퇴적물은 낙동강하구해역부터 해안을 따라 북쪽의 포항해역까지 대상으로 내대륙붕해역에 발달하였다. 연구해역 표층퇴적물은 남쪽에서 북쪽해역으로 가면서 서서히 세립화되고 또한 분급도가 양호해진다. 고해상도 탄성파 퇴적상은 낙동강 하구역의 평행한 내부 반사층리, 울산 남쪽해역의 북동향을 향하는 전진형 반사층리, 그리고 울산 북쪽에서부터 포항까지의 해역은 투명한 퇴적상으로 변하면서 발달하였다. 퇴적상의 지역적 차이는 홀로세 퇴적물 특성이 지역적으로 변화하고 있음을 지시한다. 해저퇴적물 분포특징과 탄성파 퇴적상 발달양상으로부터 낙동강에서 공급된 부유퇴적물이 주로 북향의 대마난류에 의해 해안선을 따라 북쪽으로 이동하면서 점진적으로 조립질에서 세립질화되고 분급화되는 퇴적과정을 보여주는 것으로 해석된다. 홀로세 뻘질 퇴적층은 빠른 해침과정에 의해 형성된 평탄한 침식면위에 현재의 해수준과 유사한 고해수준기 동안 형성된 고해수준 퇴적체로 해석된다.

• 한국표면공학회지
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• 제39권3호
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• pp.93-97
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• 2006

Polymer light emitting diodes (PLEDs) are expected to be commercialized as next generation displays by advantages of the fast response time, low driving voltage and easy manufacturing process for large sized flexible display. Generally, the electrical and optical properties of PLEDs are affected by the surface conditions of transparent electrode. The PLED devices with ITO/PEDOT:PSS/PVK/PFO-poss/LiF/Al structures were prepared by using the spin coating method. For this, PEDOT:PSS(poly(3,4-ethylenedioxythiophene):poly(styrene sulfolnate)) Al 4083 and PVK(N-vinylcabozole) were used as hole injection and transport layers. The PFO-poss(poly(9,9-dioctylfluorene)) was used as the emitting layer. The dependence of $O_2$ plasma treatment of ITO electrode on the electrical and optical properties of PLEDs were investigated. The sheet resistances increased slightly with an improved surface roughness of ITO electrode as the RF power increased during $O_2$ plasma treatment. The PLED devices prepared on the ITO/Glass substrates, which were plasma-treated at 40 watt in RF power for 30 seconds under 40 mtorr $O_2$ pressure, showed the maximum external emission efficiency of 0.86 lm/W and the maximum luminance of $250\;cd/m^2$, respectively. The CIE color coordinates are ranged $X\;=\;0.13{\sim}0.18$ and $Y\;=\;0.10{\sim}0.16$, showing blue color. emission.

• 폴리머
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• 제38권6호
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• pp.702-707
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• 2014

각막 내피세포는 각막 가장 안쪽의 단일 세포층이며, 데스메막 위에 놓여있다. 데스메막은 피브로넥틴, 콜라겐, 라미닌, 단백당 등의 포함하는 세포외 기질이라 불리는 다양한 단백질들로 구성되어 있다. 본 연구에서, 조직공학에서 널리 이용되고 있는 락타이드 글리콜라이드 공중합체를 이용하여 투명한 필름을 제작하였으며, 표면에 다양한 부착 분자들(피브로넥틴, 콜라겐 타입 I, IV, 라미닌, FNC 코팅 믹스)을 코팅한 후, 세포 형태 관찰, 세포 증식 및 부착, ZO-1과 $Na^+/K^+-ATPase$의 발현을 확인하였으며, RT-PCR을 통해 각막 내피세포의 인자들을 확인하였다. 실험결과, in vitro 상에서 PLGA 필름은 각막내피세포 전달체로서 역할을 하며 코팅된 세포외 기질들은 각막 내피세포의 거동에 긍정적인 영향을 미침을 확인하였다.

• 한국진공학회지
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• 제19권2호
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• pp.128-133
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• 2010

ZnO:Al 박막은 산소 압력을 조절한 두 번의 증착 과정을 이용하여, DC 펄스 마그네트론 스퍼터링 방법에 의해 증착되었다. 시드막은 다양한 Ar/$O_2$ 압력비에서 증착되었으며, 벌크막은 순수한 Ar가스를 사용하여 증착되었다. 시드막 증착시 산소 압력이 증가함에 따라, 결정성과 (002) 배향성의 정도는 증가했다. 비저항은 시드가 없는 샘플의 경우 $4.7\times10^4\Omega{\cdot}cm$ cm로부터 Ar/$O_2$ = 9/1 샘플의 경우 $3.7\times10^4\Omega{\cdot}cm$까지, 결정성의 증가와 함께 점차 감소했다. 에칭된 표면은 분화구 형상의 구조를 보여주었으며, 급격한 형상 변화가 결정성 증가와 함께 나타났다. Ar/$O_2$= 9/1 조건의 샘플은 500 nm 에서 88%의 매우 높은 haze 수치를 보여주었으며, 이는 AFM 이미지에서 보여지는 것처럼 큰 표면 구조 크기에 의해 설명된다.

• 한국진공학회:학술대회논문집
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• 한국진공학회 2009년도 제38회 동계학술대회 초록집
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• pp.200-200
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• 2010

In recent times, metal oxide semiconductors thin films transistor (TFT), such as zinc and indium based oxide TFTs, have attracted considerable attention because of their several advantageous electrical and optical properties. There are many deposition methods for fabrication of ZnO-based materials such as chemical vapor deposition, RF/DC sputtering and pulsed laser deposition. However, these vacuum process require expensive equipment and result in high manufacturing costs. Also, the methods is difficult to fabricate various multicomponent oxide semiconductor. Recently, several groups report solution processed metal oxide TFTs for low cost and non vacuum process. In this study, we have newly developed solution-processed TFTs based on Ti-related multi-component transparent oxide, i. e., InTiO as the active layer. We propose new multicomponent oxide, Titanium indium oxide(TiInO), to fabricate the high performance TFT through the sol-gel method. We investigated the influence of relative compositions of Ti on the electrical properties. Indium nitrate hydrate [$In(NO^3).xH_2O$] and Titanium isobutoxide [$C_{16}H_{36}O_4Ti$] were dissolved in acetylacetone. Then monoethanolamine (MEA) and acetic acid ($CH_3COOH$) were added to the solution. The molar concentration of indium was kept as 0.1 mol concentration and the amount of Ti was varied according to weighting percent (0, 5, 10%). The complex solutions become clear and homogeneous after stirring for 24 hours. Heavily boron (p+) doped Si wafer with 100nm thermally grown $SiO_2$ serve as the gate and gate dielectric of the TFT, respectively. TiInO thin films were deposited using the sol-gel solution by the spin-coating method. After coating, the films annealed in a tube furnace at $500^{\circ}C$ for 1hour under oxygen ambient. The 5% Ti-doped InO TFT had a field-effect mobility $1.15cm^2/V{\cdot}S$, a threshold voltage of 4.73 V, an on/off current ratio grater than $10^7$, and a subthreshold slop of 0.49 V/dec. The 10% Ti-doped InO TFT had a field-effect mobility $1.03\;cm^2/V{\cdot}S$, a threshold voltage of 1.87 V, an on/off current ration grater than $10^7$, and a subthreshold slop of 0.67 V/dec.

• 한국결정성장학회지
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• 제31권4호
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• pp.154-158
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• 2021

550 nm 파장대에서 O₂/Ar+O₂ 혼합기체 농도비가 0에서 7.9 %로 변화 시 Mn 도핑된 SnO₂ 투명전도막의 투과율은 80.9에서 85.4 %로 밴드갭 에너지는 3.0에서 3.6 eV로 증가하였다. 비저항은 O₂/Ar+O₂ 혼합기체 농도비가 0에서 2.7 %까지 증가 시 3.21 Ω·cm에서 0.03 Ω·cm으로 감소하다 이후 7.9 %로 증가 시에는, 52.0 Ω·cm으로 급격하게 상승하였다. XPS 분석결과 혼합기체 O₂/Ar+O₂에서 O₂ 농도의 증가로 Sn_3d5/2의 결합에너지가 486.40에서 486.58 eV로, O_1s의 결합에너지도 530.20에서 530.34 eV로 조금 변화하였다. 따라서 스파터링 방법으로 제조한 Mn 도핑된 SnO₂ 투명전도막에서 O₂ 농도변화에 따라 SnO와 SnO₂ 2개의 상이 공존하는 것을 확인하였다.

• 대한금속재료학회지
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• 제48권5호
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• pp.456-461
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• 2010

We investigated the In-based ohmic contacts on Nitrogen-face (N-face) n-type GaN, as well as Ga-face n-type GaN, for InGaN-based vertical Light Emitting Diodes (LEDs). For this purpose, we fabricated Circular Transfer Length Method (CTLM) patterns on the N-face n-GaN that were prepared by using a laser-lift off method, as well as on the Ga-face n-GaN that were prepared by using a dry etching method. Then, In/transparent conducting oxide (TCO) and In/TiW schemes were deposited on the CTLM in order for low resistance ohmic contacts to form. The In/TCO scheme on the Ga-face n-GaN showed high specific contact resistance, while the minimum specific contact resistance was only 3${\times}$10$^{-2}$ $\Omega$-cm$^{2}$ after annealing at 300${^{\circ}C}$, which can be attributed to the high sheet resistance of the TCO layer. In contrast, the In/TiW scheme on the Ga-face n-GaN produced low specific contact resistance of 2.1${\times}$10$^{5}$ $\Omega$-cm$^{2}$ after annealing at 500${^{\circ}C}$ for 1 min. In addition, the In/TiW scheme on the N-face n-GaN also resulted in a low specific contact resistance of 2.2${\times}$10$^{-4}$ $\Omega$-cm$^{2}$ after annealing at 300${^{\circ}C}$. These results suggest that both the Ga-face n-GaN and N-face n-GaN.

• 대한화학회지
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• 제66권3호
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• pp.209-217
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• 2022

본 연구그룹에서는 투명 전도성 기판이 필요 없는 광감응형 전기변색 소자를 개발하였다. 이전의 연구에서 백금 촉매 적용에 의한 빠른 착색 및 탈색을 확인하였고, 저온소성형 WO₃졸과 TiO₂ 졸을 적용하여 플렉시블 필름형 소자를 구현하였으나, 이러한 소자가 4~5 시간 동안 태양광에 노출될 경우 과착색 되어 암막상태에서도 탈색이 되지 않는 현상을 확인하였다. 본 연구에서는 이러한 과착색 현상을 해결하기 위하여 광감응형 전기변색 소자의 전해질에(4-Hydroxy-2,2,6,6-tetramethylpiperidin-1-yl)oxyl (TEMPOL)을 첨가하였다. TEMPOL을 첨가제로 사용한 광감응형 전기변색 소자의 경우 4시간 이상 햇빛에 노출되어도 과착색이 되지 않고, 가역성이 크게 향상되는 것을 확인하였다. 다양한 농도의 TEMPOL을 적용하여 가시광 투과율 변화 및 착/탈색 속도를 비교하였고, 에너지 레벨 관점에서 가능한 TEMPOL의 과착색 방지 메커니즘을 제시하였다.