• 한국해양학회지
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• v.23 no.1
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• pp.24-40
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• 1988

In the Korea Ocean Nodule Development (KONOD)-1 area between the Clarion and Clipperton fracture zones of the northeastern equatorial Pacific, the pelagic sediment layer can be divided into two or three units on air-gun seismic profile. The acoustic units can be also correlated with those in the DSDP site 163 core. The topmost unit (unit I) is acoustically transparent and consists of zeolitic clay and radiolarian ooze of late Oligocene to middle Eocene age. Unit IIA is well-stratified and transparent in the lower part. consisting of the radiolarian ooze intercalated with chert beds and zeolitic clay of early Eocene to Paleocene age. Unit IIB is stratified with layers of silicified and compacted flinty-cherty nannofossil chalk (late Cretaceous) on top of the acoustic basement. Units I and IIA form the Line Islands Formation that overlies an unnamed formation of unit lIB. The entire layers and the unit I layer propressively thin northward, except near the Line Islands Ridge. The distribution of sediment layer has been controlled by the equatorial Cenozoic CCD and the northward spreading of the Pacific plate. The change of CCD corresponding to the subsidence and migration of the plate has determined the sediment composition of the DSDP 163 core passed across the equator of high sedimentation suite. The late Cretaceous sedimentary layer (unit IIB) in the 163 core was formed above the CCD south of the equator. The unit IIA resulted from rapid subsidence of the Pacific plate below the CCD in the Paleocene. The unit IIA is seen only in the west of 149 W. Both the units IIA and I were probably formed during the Pacific plate passing and after leaving the equatorial region respectively since early Eocene. In the south of the KONOD-l area, the unit I was redistributed by bottom current, a branch of the Antarctic Bottom Water flowing eastward guided by the Clipperton fracture zone. The activities of bottom currents were prolonged for a long geological time. Turbidite layers occur more than 350 km from the Hawaiian Ridge to near the Clarion fracture zone. They originated directly from the Hawaiian Ridge, filling the topographic lows.

• Journal of the Microelectronics and Packaging Society
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• v.15 no.2
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• pp.23-28
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• 2008

To improve the external quantum efficiency by means of the optimization of the polymer light emitting diodes(PLEDs) structure, the PLED with ITO/PEDOT:PSS/(PFO)/PFO:MEH-PPV/LiF/Al structure were fabricated and investigated the electrical and optical properties for the prepared devices. ITO(indium tin oxide) and PEDOT:PSS [poly (3,4-ethylenedioxythiophene): poly(styrene sulfolnate)] were used as transparent anode film and hole transport materials, respectively. PFO[poly(9,9-dioctylfluorene)] and MEHPPV[poly(2-methoxy-5(2-ethylhe xoxy)-1,4-phenylenevinyle)] were used as the light emitting host and dopant materials. The doping concentration of MEH-PPV was 9wt% with thickness of about $400{\AA}$. We investigated the dependence of the PFO thickness ranging from $200{\AA}$ to $300{\AA}$ on the electrical, optical properties of PLEDs. Among prepared PLED devices with different PFO thicknesses, the highest value of the luminance was obtained for the PLED device with $250{\AA}$ in thickness. As a result, the current density and luminance ware found to be about $400mA/cm^2$ and $1500cd/m^2$ at 13V, respectively. In addition, the luminance and current efficiency of PLED device with double emitting layer (PFO/PFO:MEH-PPV) were improved about 3 times compared with the one with single emitting layer (PFO:MEH-PPV).

• Proceedings of the Korean Vacuum Society Conference
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• 2014.02a
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• pp.409-409
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• 2014

Recently hexagonal boron nitride (h-BN), III-V compound of boron and nitrogen with strong covalent $sp^2$ bond, is a 2 dimensional insulating material with a large direct band gap up to 6 eV. Its outstanding properties such as strong mechanical strength, high thermal conductivity, and chemical stability have been reported to be similar or superior to graphene. Because of these excellent properties, h-BN can potentially be used for variety of applications such as dielectric layer, deep UV optoelectronic device, and protective transparent substrate. Ultra flat and charge impurity-free surface of h-BN is also an ideal substrate to maintain electrical properties of 2 dimensional materials such as graphene. To synthesize a single or a few layered h-BN, chemical vapor deposition method (CVD) has been widely used by using an ammonia borane as a precursor. Ammonia borane decomposes into hydrogen (gas), monomeric aminoborane (solid), and borazine (gas) that is used for growing h-BN layer. However, very active monomeric aminoborane forms polymeric aminoborane nanoparticles that are white non-crystalline BN nanoparticles of 50~100 nm in diameter. The presence of these BN nanoparticles following the synthesis has been hampering the implementation of h-BN to various applications. Therefore, it is quite important to grow a clean and high quality h-BN layer free of BN particles without having to introduce complicated process steps. We have demonstrated a synthesis of a high quality h-BN monolayer free of BN nanoparticles in wafer-scale size of $7{\times}7cm^2$ by using CVD method incorporating a simple filter system. The measured results have shown that the filter can effectively remove BN nanoparticles by restricting them from reaching to Cu substrate. Layer thickness of about 0.48 nm measured by AFM, a Raman shift of $1,371{\sim}1,372cm^{-1}$ measured by micro Raman spectroscopy along with optical band gap of 6.06 eV estimated from UV-Vis Spectrophotometer confirm the formation of monolayer h-BN. Quantitative XPS analysis for the ratio of boron and nitrogen and CS-corrected HRTEM image of atomic resolution hexagonal lattices indicate a high quality stoichiometric h-BN. The method presented here provides a promising technique for the synthesis of high quality monolayer h-BN free of BN nanoparticles.

• Proceedings of the Korean Vacuum Society Conference
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• 2014.02a
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• pp.344-344
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• 2014

Transparent amorphous oxide semiconductors such as a In-Ga-Zn-O (a-IGZO) have advantages for large area electronic devices; e.g., uniform deposition at a large area, optical transparency, a smooth surface, and large electron mobility >10 cm2/Vs, which is more than an order of magnitude larger than that of hydrogen amorphous silicon (a-Si;H).1) Thin film transistors (TFTs) that employ amorphous oxide semiconductors such as ZnO, In-Ga-Zn-O, or Hf-In-Zn-O (HIZO) are currently subject of intensive study owing to their high potential for application in flat panel displays. The device fabrication process involves a series of thin film deposition and photolithographic patterning steps. In order to minimize contamination, the substrates usually undergo a cleaning procedure using deionized water, before and after the growth of thin films by sputtering methods. The devices structure were fabricated top-contact gate TFTs using the a-IGZO films on the plastic substrates. The channel width and length were 80 and 20 um, respectively. The source and drain electrode regions were defined by photolithography and wet etching process. The electrodes consisting of Ti(15 nm)/Al(120 nm)/Ti(15nm) trilayers were deposited by direct current sputtering. The 30 nm thickness active IGZO layer deposited by rf magnetron sputtering at room temperature. The deposition condition is as follows: a rf power 200 W, a pressure of 5 mtorr, 10% of oxygen [O2/(O2+Ar)=0.1], and room temperature. A 9-nm-thick Al2O3 layer was formed as a first, third gate insulator by ALD deposition. A 290-nm-thick SS6908 organic dielectrics formed as second gate insulator by spin-coating. The schematic structure of the IGZO TFT is top gate contact geometry device structure for typical TFTs fabricated in this study. Drain current (IDS) versus drain-source voltage (VDS) output characteristics curve of a IGZO TFTs fabricated using the 3-layer gate insulator on a plastic substrate and log(IDS)-gate voltage (VG) characteristics for typical IGZO TFTs. The TFTs device has a channel width (W) of $80{\mu}m$ and a channel length (L) of $20{\mu}m$. The IDS-VDS curves showed well-defined transistor characteristics with saturation effects at VG>-10 V and VDS>-20 V for the inkjet printing IGZO device. The carrier charge mobility was determined to be 15.18 cm^2 V-1s-1 with FET threshold voltage of -3 V and on/off current ratio 10^9.

• Applied Chemistry for Engineering
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• v.23 no.4
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• pp.377-382
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• 2012

CdS thin films have been widely used as a buffer layer of CIGS semiconductor solar cells to reduce the lattice mismatch between transparent electrode and absorber layer. In order to prepare the CdS films with high transparency and low resistivity, they were deposited by varying Cd concentration with the constant S concentration in the solution using chemical bath deposition method. They were analyzed in terms of structural, optical and electrical properties of CdS films according to the $[S^{2-}]/[Cd^{2+}]$ ratio. In the case of Cd concentration higher than S concectration, CdS thin films were formed mainly by cluster- by-cluster formation due to the homogeneous reaction between Cd and S in the solution. Therefore the grain size increased and the transmittance decreased. On the other hand, in the case of Cd concentration lower than S concentration, CdS films were formed by heterogeneous reaction on the substrate rather than in the solution. The CdS films have the grains with the uniform circular shape of a few hundreds ${\AA}$. As the Cd concentration increased in the solution, the $[S^{2-}]/[Cd^{2+}]$ ratio decreased and the resistivity decreased by the increase in the carrier concentration due to the formation S vacancy by the excess Cd.

• Journal of Korean Neurosurgical Society
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• v.67 no.2
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• pp.146-157
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• 2024

Objective : Chronic subdural hematomas (cSDHs) are generally known to result from traumatic tears of bridging veins. However, the causes of repeat spontaneous cSDHs are still unclear. We investigated the changes in vasculature in the human dura mater and outer membrane (OM) of cSDHs to elucidate the cause of their spontaneous repetition. Methods : The dura mater was obtained from a normal control participant and a patient with repeat spontaneous cSDHs. The pathological samples from the patient included the dura mater and OM tightly adhered to the inner dura. The samples were analyzed with a particular focus on blood and lymphatic vessels by immunohistochemistry, 3-dimensional imaging using a transparent tissue clearing technique, and electron microscopy. Results : The dural border cell (DBC) layer of the dura mater and OM were histologically indistinguishable. There were 5.9 times more blood vessels per unit volume of tissue in the DBC layer and OM in the patient than in the normal control. The DBC layer and OM contained pathological sinusoidal capillaries not observed in the normal tissue; these capillaries were connected to the middle meningeal arteries via penetrating arteries. In addition, marked lymphangiogenesis in the periosteal and meningeal layers was observed in the patient with cSDHs. Conclusion : Neovascularization in the OM seemed to originate from the DBC layer; this is a potential cause of repeat spontaneous cSDHs. Embolization of the meningeal arteries to interrupt the blood supply to pathological capillaries via penetrating arteries may be an effective treatment option.

• Korean Journal of Materials Research
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• v.13 no.3
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• pp.191-194
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• 2003

The influence of on ion beam irradiation to the indium tin oxide (ITO) substrate on the performance of the organic light-emitting diodes (OLEDs) was studied. ITO films were used as the transparent anode of OLEDs with poly(2-methoxy-5-(2'-ethylhexyloxy)-1,4-phenylenevinylene) (MEH-PPV) as a hole-injection/transport layer. Oxygen and argon plasma treatment of ITO resulted in a change in the work function and the chemical composition. For plasma treated ITO anodes, the device efficiency clearly correlated with the value of the work function. We also discussed the implications of our experimental study in relation to the modification of the ITO surface composition, transmittance, reflectance, and water contact angle (WCA).

• Proceedings of the Korean Vacuum Society Conference
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• 2012.08a
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• pp.242-242
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• 2012

Transparent oxide semiconductors are increasingly becoming one of good candidates for high efficient channel materials of thin film transistors (TFTs) in large-area display industries. Compare to the conventional hydrogenated amorphous silicon channel layers, solution processed ZnO-TFTs can be simply fabricated at low temperature by just using a spin coating method without vacuum deposition, thus providing low manufacturing cost. Furthermore, solution based oxide TFT exhibits excellent transparency and enables to apply flexible devices. For this reason, this process has been attracting much attention as one fabrication method for oxide channel layer in thin-film transistors (TFTs). But, poor electrical characteristic of these solution based oxide materials still remains one of issuable problems due to oxygen vacancy formed by breaking weak chemical bonds during fabrication. These electrical properties are expected due to the generation of a large number of conducting carriers, resulting in huge electron scattering effect. Therefore, we study a novel technique to effectively improve the electron mobility by applying environmental annealing treatments with various gases to the solution based Li-doped ZnO TFTs. This technique was systematically designed to vary a different lithium ratio in order to confirm the electrical tendency of Li-doped ZnO TFTs. The observations of Scanning Electron Microscopy, Atomic Force Microscopy, and X-ray Photoelectron Spectroscopy were performed to investigate structural properties and elemental composition of our samples. In addition, I-V characteristics were carried out by using Keithley 4,200-Semiconductor Characterization System (4,200-SCS) with 4-probe system.

• 제어로봇시스템학회:학술대회논문집
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• 2003.10a
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• pp.1036-1041
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• 2003

Non-destruction examinations are required in medical sciences and various engineering now. We wish to emulate the examinations in very simplified experiments. It is an educational program. We show a neural network analysis to predict the locations of a sound-source or a body irradiated by sound-waves in audio-region. The sound is an interest flux, and it enables to clear local-structures in a non-transparent space. However, the sound-propagation equations are not solved easily, therefore, we consider to adopt multi-layer neural-networks instead of the direct solutions. We used detected intensities and coordinates for input data and teaching data. A neural network learned them. The neural-network analysis decomposed the distance of 50cm. The resolution is rather rough; however, it is caused by the limitation of our equipments. Since there is no problem in the neural network processing, if we could revise experiments, then, progress of the resolution would be got. Thus, the proposed method functioned as an educational and simplified non-destruction examination.

• Journal of the Korean Society for Heat Treatment
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• v.30 no.3
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• pp.113-116
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• 2017

100 nm thick Sn doped ZnO (ZTO) single layer, 15 nm thick Ag buffered ZTO (ZTO/Ag), Ag intermediated ZTO (ZTO/Ag/ZTO) and Ag capped ZTO (Ag/ZTO) films were prepared on poly-carbonate (PC) substrates by RF and DC magnetron sputtering and then the influence of the Ag thin film on the optical and electrical properties of ZTO films were investigated. As deposited ZTO thin films show the visible transmittance of 81.8%, while ZTO/Ag/ZTO trilayer films show a higher visible transmittance of 82.5% in this study. From the observed results, it can be concluded that the 15 nm thick Ag interlayer enhances the opto-electrical performance of ZTO thin films effectively for use as flexible transparent conducting oxides films in various opto-electrical applications.