• 한국정보디스플레이학회:학술대회논문집
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• 2009.10a
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• pp.820-822
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• 2009

Tandem white organic light emitting diodes (WOLEDs) are fabricated by using a transparent interconnecting layer of Al:LiF composite/molybdenum oxides ($MoO_3$). We demonstrate two types of tandem WOLEDs consisting of two color emissions (red and blue emission) and three color emissions (red, green and blue emission). Tandem WOLED consisting of three color emission shows higher external quantum efficiency and current efficiency.

• Proceedings of the KIEE Conference
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• 2000.07c
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• pp.1785-1787
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• 2000

This paper present the result of the investigation, the electric properties of insulators due to non-soluble contamination. In general, the humidity and the amount of soluble salts such as NaCl, $MgCl_2$ are the most dominant factor. Though the non-soluble do not distribute on conductivity of contaminant layer, that has the hygroscopic property. For this study, we make a mini-fog chamber with transparent acryl and the kaoline was used for non-soluble contaminant. The kaoline was applied with sprayer to get the specific ESDD and NSDD value, then the specimen was dried and installed horizontally. And to measure the leakage current a DAS system was developed with LabView. With the result, we could know the influence of non-soluble content and the relationship between NSDD and ESDD.

• Journal of information and communication convergence engineering
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• v.1 no.1
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• pp.23-26
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• 2003

A photodiode capable of obtaining a sufficient photo/dark current ratio at both a forward bias state and a reverse bias state is proposed. The photodiode includes a glass substrate, an aluminum film formed as a lower electrode over the glass substrate, an alumina film formed as a schottky barrier over the aluminum film, a hydrogenated amorphous silicon film formed as a photo conduction layer over a portion of the alumina film, and a transparent conduction film formed as an upper electrode over the hydro-generated amorphous silicon film. Growth of high quality alumina($Al_{2}O_{3}$) film using anodizing technology is proposed and analyzed by experiment. We have obtained the film with a superior characteristics

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2007.06a
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• pp.444-445
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• 2007

Aluminum-doped zinc oxide (AZO) films are attractive materials as transparent conductive electrode because they are inexpensive, nontoxic and abundant element compared with indium tin oxide (ITO). AZO films have been deposited on glass (coming 1737) substrates by RF magnetron sputtering system. An ultrathin layer of nickel oxide (NiO) was deposited on the AZO anode to enhance the hole injections in organic light-emitting diodes (OLED). The current density-voltage and luminescence-voltage properties of devices were studied and compared with ITO device.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2000.07a
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• pp.691-695
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• 2000

This paper present the result of the investigation, the electric properties of insulators due to non-soluble contamination. In general, the humidity and the amount of soluble salts such as NaCl, MgCl$_2$are the most dominant factor. Though the non-soluble do not distribute on conductivity of contaminant layer, that has the hygroscopic property. For this study, we make a mini-fog chamber with transparent acryl and the kaoline was used for non-soluble contaminant. The kaoline was applied with sprayer to get the specific ESDD and NSDD value, then the specimen was dried and installed horizontally. And to measure the leakage current a DAS system was developed with LabView. With the result, we could know the influence of non-soluble content and the relationship between NSDD and ESDD.

• Proceedings of the Korean Vacuum Society Conference
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• 2013.08a
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• pp.316-316
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• 2013

GZO/Ag/GZO 다층 투명 전도막은 투명 산화물 전극 사이에 빛이 투과할 수 있는 수준의 매우 얇은 금속을 삽입하여 낮은 면저항과 높은 투과율을 구현하는 기술로 금속의 유연성과 낮은 비저항, 산화물은 높은 투과도와 안정성을 동시에 이용할 수 있는 투명전도막이다. 본 연구에서는 RF 마그네트론 스퍼터와 전자빔 증착을 이용하여 GZO 박막 사이에 Ag 박막을 삽입한 GZO/Ag/GZO 구조의 박막을 제작하였다. Ag 박막의 두께와 공정 압력이 박막에 미치는 영향을 연구하였으며, 급속 열처리에 따른 GZO/Ag/GZO 박막의 특성을 분석하였다. Ag 삽입 박막 두께와 GZO/Ag/GZO 박막의 열처리 온도 최적화를 통하여 $2.2{\times}10-5{\Omega}{\cdot}cm$의 가장 낮은 비저항과 88.9%의 투과율을 나타내었다.

• Proceedings of the Korean Institute of Surface Engineering Conference
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• 2007.04a
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• pp.26-26
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• 2007

ALD는 저온 증착과 대면적에의 증착 균일도에 있어 디스플레이 소자의 제조에 유용한 특성을 지니고 있다. ZnO TFT는 차세대 디스플레이의 구동 소자의 한 후보로, 본 연구에서는 기존의 다른 연구와는 달리 ALD를 이용한 ZnO TFT의 제조에 관해 연구하였다. ZnO를 sputtering과 ALD 두가지 방법으로 증착하여 각각의 물성 및 전기적 특성 연구를 진행하였다. ALD ZnO의 경우 TEZ와 물을 이용한 증착방법으로는 높은 캐리어 농도로 인해 TFT에의 적용이 어려웠으므로 질소 도핑을 통해 캐리어 농도를 조절하여 소자 특성을 확보할 수 있었다. 이 경우 $I_{off}$, $I_{on}/I_{off}$, mobility, sub-threadshold swing 등과 같은 특성이 매우 향상됨을 확인하였다.

• Korean Journal of Metals and Materials
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• v.48 no.9
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• pp.831-841
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• 2010

Indium tin oxide (ITO) nanopowders were synthesized by coprecipitation and the sol-gel method to prepare a stable dispersion of ITO nano-colloid for antistatic coating of a display panel. The colloidal dispersions were prepared by attrition process with a vibratory milling apparatus using a suitable dispersant in organic solvent. The ITO coating solution was spin-coated on a glass panel followed by the deposition of partially hydrolyzed alkyl silicate as an over-coat layer. The double-layered coating films were characterized by measuring the sheet resistance and reflectance spectrum for antistatic and antireflective properties.

• Current Applied Physics
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• v.18 no.12
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• pp.1583-1591
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• 2018

We analysed perovskite $CH_3NH_3PbI_{3-x}Cl_x$ inverted planer structure solar cell with nickel oxide (NiO) and spiroMeOTAD as hole conductors. This structure is free from electron transport layer. The thickness is optimized for NiO and spiro-MeOTAD hole conducting materials and the devices do not exhibit any significant variation for both hole transport materials. The back metal contact work function is varied for NiO hole conductor and observed that Ni and Co metals may be suitable back contacts for efficient carrier dynamics. The solar photovoltaic response showed a linear decrease in efficiency with increasing temperature. The electron affinity and band gap of transparent conducting oxide and NiO layers are varied to understand their impact on conduction and valence band offsets. A range of suitable band gap and electron affinity values are found essential for efficient device performance.

• Progress in Superconductivity
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• v.3 no.1
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• pp.1-4
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• 2001

Interface-engineered junctions with $YbBa_2$$Cu_3$$O_{7}$ as the counter electrode were demonstrated. The junctions exhibited excellent Josephson characteristics with a Josephson critical current ($I_{c}$) ranging from 0.1 mA to 8 mA and a magnetic field modulation of the $I_{c}$ exceeding 80% at 4.2 K while maintaining complete c-axis orientation of the counter-electrode layer. The$ 1\sigma$ spreads in $I_{c}$ for junctions with an average $I_{c}$ of 1-2 mA were 5-8% for 16 junctions within a chip, and 9.3% for a 100-junction array. Our dI/dV measurements suggest that a theoretical approach taking into account both a highly transparent barrier and the proximity effect is required to fully understand the Junction characteristics.ristics.