• Journal of the Korean Society of Manufacturing Process Engineers
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• v.16 no.1
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• pp.96-101
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• 2017

We have developed a compact desktop-sized nanopatterning system driven by the Roll-to-Roll (R2R) nanoimprinting (NIL) principle. The system realizes the continuous and high-speed stamping of various nanoscale patterns on a large-area flexible substrate without resorting to ponderous and complicated instruments. We first lay out the process principle based on continuous NIL on a UV-curable resin layer using a flexible nanopatterned mold. We then create conceptual and specific designs for the system by focusing on two key processes, imprinting and UV curing, which are performed in a continuous R2R fashion. We build a system with essential components and optimized modules for imprinting, UV curing, and R2R conveying to enable simple but effective nanopatterning within the desktop volume. Finally, we demonstrate several nanopatterning results such as nanolines and nanodots, which are obtained by operating the built desktop R2R NIL system on transparent and flexible substrates. Our system may be further utilized in the scalable fabrication of diverse flexible nanopatterns for many functional applications in optics, photonics, sensors, and energy harvesters.

• Proceedings of the Korean Vacuum Society Conference
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• 2014.02a
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• pp.463-463
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• 2014

Dye-sensitized solar cells (DSSCs) have generated a strong interest in the development of solid-state devices owing to their low cost and simple preparation procedures. Effort has been devoted to the study of electrolytes that allow light-to-electrical power conversion for DSSC applications. Several attempts have been made to substitute the liquid electrolyte in the original solar cells by using (2,2',7,7'-tetrakis (N,N-di-p-methoxyphenylamine)-9-9'-spirobi-fluorene (spiro-OMeTAD) that act as hole conductor [1]. Although efficiencies above 3% have been reached by several groups, here the major challenging is limited photoelectrode thickness ($2{\mu}m$), which is very low due to electron diffusion length (Ln) for spiro-OMeTAD ($4.4{\mu}m$) [2]. In principle, the $TiO_2$ layer can be thicker than had been thought previously. This has important implications for the design of high-efficiency solid-state DSSCs. In the present study, we have fabricated 3-D Transparent Conducting Oxide (TCO) by growing tin-doped indium oxide (ITO) nanowire (NWs) arrays via a vapor transport method [3] and mesoporous $TiO_2$ nanoparticle (NP)-based photoelectrodes were prepared using doctor blade method. Finally optimized light-harvesting solid-state DSSCs is made using 3-D TCO where electron life time is controlled the recombination rate through fast charge collection and also ITO NWs length can be controlled in the range of over $2{\mu}m$ and has been characterized using field emission scanning electron microscopy (FE-SEM). Structural analyses by high-resolution transmission electron microscopy (HRTEM) and X-Ray diffraction (XRD) results reveal that the ITO NWs formed single crystal oriented [100] direction. Also to compare the charge collection properties of conventional NPs based solid-state DSSCs with ITO NWs based solid-state DSSCs, we have studied intensity modulated photovoltage spectroscopy (IMVS), intensity modulated photocurrent spectroscopy (IMPS) and transient open circuit voltages. As a result, above $4{\mu}m$ thick ITO NWs based photoelectrodes with Z907 dye shown the best performing device, exhibiting a short-circuit current density of 7.21 mA cm-2 under simulated solar emission of 100 mW cm-2 associated with an overall power conversion efficiency of 2.80 %. Finally, we achieved the efficiency of 7.5% by applying a CH3NH3PbI3 perovskite sensitizer.

• The Sea:JOURNAL OF THE KOREAN SOCIETY OF OCEANOGRAPHY
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• v.2 no.1
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• pp.8-13
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• 1997

The Holocene mud deposits in the southeastern innershelf of the Korean Peninsula were studied using the shallow seismic reflection profiles coupled with sediment sampling. The Holocene mud deposits are developed as a belt in the innershelf area from the mouth of the Nakdong River to off Pohang along the coastline. The surficial sediments in the study area gradually become finer and well sorted from south to north. The seismic facies in the Holocene sequence change northward from parallel reflectors in the mouth of the Nakdong River and northeastward prograding reflectors in the southern part off Ulsan to transparent layer in the nearshore off Ulsan to Pohang. The regional difference of seismic facies indicates that the Holocene sediment characters are varied with localities. By combining the surficial sediments properties with seismic facies patterns, the suspended sediments mostly supplied from the Nakdong River may be transported northward along the shore by the north-flowing Tsushima warm current. The Holocene mud sequence overlying the ravinement surface which is produced by erosion of underlying sediments during a rapid transgression can be interpreted as the highstand system tracts probably formed during the highstand of sea level similar to the present-day sea level.

• Journal of the Korean institute of surface engineering
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• v.39 no.3
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• pp.93-97
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• 2006

Polymer light emitting diodes (PLEDs) are expected to be commercialized as next generation displays by advantages of the fast response time, low driving voltage and easy manufacturing process for large sized flexible display. Generally, the electrical and optical properties of PLEDs are affected by the surface conditions of transparent electrode. The PLED devices with ITO/PEDOT:PSS/PVK/PFO-poss/LiF/Al structures were prepared by using the spin coating method. For this, PEDOT:PSS(poly(3,4-ethylenedioxythiophene):poly(styrene sulfolnate)) Al 4083 and PVK(N-vinylcabozole) were used as hole injection and transport layers. The PFO-poss(poly(9,9-dioctylfluorene)) was used as the emitting layer. The dependence of $O_2$ plasma treatment of ITO electrode on the electrical and optical properties of PLEDs were investigated. The sheet resistances increased slightly with an improved surface roughness of ITO electrode as the RF power increased during $O_2$ plasma treatment. The PLED devices prepared on the ITO/Glass substrates, which were plasma-treated at 40 watt in RF power for 30 seconds under 40 mtorr $O_2$ pressure, showed the maximum external emission efficiency of 0.86 lm/W and the maximum luminance of $250\;cd/m^2$, respectively. The CIE color coordinates are ranged $X\;=\;0.13{\sim}0.18$ and $Y\;=\;0.10{\sim}0.16$, showing blue color. emission.

• Polymer(Korea)
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• v.38 no.6
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• pp.702-707
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• 2014

Corneal endothelium is mono-inner cell layer of cornea and lay on Descmet's membrane which comprised of various proteins called extracellular matrix such as fibronectin, collagen, laminin, and proteoglycan, etc. In this study, we fabricated transparent poly(lactic-co-glycolic acid) (PLGA) film because PLGA is widely used for tissue engineering based on their properties. We investigated the behaviors of rabbit corneal endothelial cells (rCEnCs) on PLGA film surfaces coated with various cell-adhesive molecules like fibronectin, laminin, collagen type I and IV and FNC coating mix. The morphologic images, proliferation and adhesion assay, immunofluorescence for ZO-1 and $Na^+/K^+-ATPase$ and RT-PCR for expression of specific markers were conducted. These results showed that PLGA film plays a role as CEnC carriers in vitro and the cell-adhesive molecules give positive effects on the behaviors of rCEnC.

• Journal of the Korean Vacuum Society
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• v.19 no.2
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• pp.128-133
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• 2010

ZnO:Al films were deposited by DC-pulsed magnetron sputtering using a two-step process involving the control of the oxygen pressure. The seed layers were prepared with various Ar to oxygen flow ratios and the bulk layers were deposited under pure Ar. As the oxygen pressure during the deposition of the seed layer increased, the crystallinity and degree of (002) texturing increased. The resistivity gradually decreased with increasing crystallinity from $4.7\times10^4\Omega{\cdot}cm$ (no seed) to $3.7\times10^4\Omega{\cdot}cm$ (Ar/$O_2$ = 9/1). The etched surface showed a crater-like structure and an abrupt morphology change appeared as the crystallinity was increased. The sample deposited at an Ar/$O_2$ flow ratio of 9/1 showed a very high haze value of 88% at 500 nm, which was explained by the large feature size of the craters, as shown in the AFM image.

• Proceedings of the Korean Vacuum Society Conference
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• 2010.02a
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• pp.200-200
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• 2010

In recent times, metal oxide semiconductors thin films transistor (TFT), such as zinc and indium based oxide TFTs, have attracted considerable attention because of their several advantageous electrical and optical properties. There are many deposition methods for fabrication of ZnO-based materials such as chemical vapor deposition, RF/DC sputtering and pulsed laser deposition. However, these vacuum process require expensive equipment and result in high manufacturing costs. Also, the methods is difficult to fabricate various multicomponent oxide semiconductor. Recently, several groups report solution processed metal oxide TFTs for low cost and non vacuum process. In this study, we have newly developed solution-processed TFTs based on Ti-related multi-component transparent oxide, i. e., InTiO as the active layer. We propose new multicomponent oxide, Titanium indium oxide(TiInO), to fabricate the high performance TFT through the sol-gel method. We investigated the influence of relative compositions of Ti on the electrical properties. Indium nitrate hydrate [$In(NO^3).xH_2O$] and Titanium isobutoxide [$C_{16}H_{36}O_4Ti$] were dissolved in acetylacetone. Then monoethanolamine (MEA) and acetic acid ($CH_3COOH$) were added to the solution. The molar concentration of indium was kept as 0.1 mol concentration and the amount of Ti was varied according to weighting percent (0, 5, 10%). The complex solutions become clear and homogeneous after stirring for 24 hours. Heavily boron (p+) doped Si wafer with 100nm thermally grown $SiO_2$ serve as the gate and gate dielectric of the TFT, respectively. TiInO thin films were deposited using the sol-gel solution by the spin-coating method. After coating, the films annealed in a tube furnace at $500^{\circ}C$ for 1hour under oxygen ambient. The 5% Ti-doped InO TFT had a field-effect mobility $1.15cm^2/V{\cdot}S$, a threshold voltage of 4.73 V, an on/off current ratio grater than $10^7$, and a subthreshold slop of 0.49 V/dec. The 10% Ti-doped InO TFT had a field-effect mobility $1.03\;cm^2/V{\cdot}S$, a threshold voltage of 1.87 V, an on/off current ration grater than $10^7$, and a subthreshold slop of 0.67 V/dec.

• Journal of the Korean Crystal Growth and Crystal Technology
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• v.31 no.4
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• pp.154-158
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• 2021

The optical transmittance of Mn-doped SnO₂ monolayer film increased gradually from 80.9 to 85.4 % at 550 nm wavelengths upon increasing the O₂/Ar+O₂ concentration rate from 0 to 7.9 % and the band gap energy changed from 3.0 to 3.6 eV. The resistivity tended to decrease from 3.21 Ω·cm to 0.03 Ω·cm, reaching a minimum at 2.7 %, and then gradually increased from 0.03 to 52.0 Ω·cm at higher O₂/Ar+O₂ gas concentration ratio. Based on XPS spectra analysis, the Sn 3d_5/2 peak of Mn-doped SnO₂ single layer shifted slightly from 486.40 to 486.58 and O_1s peak also shifted from 530.20 to 530.33 eV with increase the O₂/Ar+O₂ concentration ratio. Therefore, the XPS spectra results indicate that a multiphase with SnO and SnO₂ coexisted in the sputtered Mn-doped SnO₂ monolayer film.

• Korean Journal of Metals and Materials
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• v.48 no.5
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• pp.456-461
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• 2010

We investigated the In-based ohmic contacts on Nitrogen-face (N-face) n-type GaN, as well as Ga-face n-type GaN, for InGaN-based vertical Light Emitting Diodes (LEDs). For this purpose, we fabricated Circular Transfer Length Method (CTLM) patterns on the N-face n-GaN that were prepared by using a laser-lift off method, as well as on the Ga-face n-GaN that were prepared by using a dry etching method. Then, In/transparent conducting oxide (TCO) and In/TiW schemes were deposited on the CTLM in order for low resistance ohmic contacts to form. The In/TCO scheme on the Ga-face n-GaN showed high specific contact resistance, while the minimum specific contact resistance was only 3${\times}$10$^{-2}$ $\Omega$-cm$^{2}$ after annealing at 300${^{\circ}C}$, which can be attributed to the high sheet resistance of the TCO layer. In contrast, the In/TiW scheme on the Ga-face n-GaN produced low specific contact resistance of 2.1${\times}$10$^{5}$ $\Omega$-cm$^{2}$ after annealing at 500${^{\circ}C}$ for 1 min. In addition, the In/TiW scheme on the N-face n-GaN also resulted in a low specific contact resistance of 2.2${\times}$10$^{-4}$ $\Omega$-cm$^{2}$ after annealing at 300${^{\circ}C}$. These results suggest that both the Ga-face n-GaN and N-face n-GaN.

• Journal of the Korean Chemical Society
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• v.66 no.3
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• pp.209-217
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• 2022

We have developed photosensitive electrochromic smart windows that does not require any transparent conducting oxide (TCO) substrate. In our previous study, we demonstrated that a flexible film-type device made with a low temperature curing WO₃ sol and TiO₂ sol could show a reversible and rapid switching between colored and bleached state via incorporation of platinum catalysts on the surface of WO₃ layer. However, when these devices were exposed to sunlight over 4 hour, it was confirmed that they did not return to fully bleached state in the darkened state due to their overcoloring process. In this study, we added 4-hydroxy-(2,2,6,6-tetramethylpiperidin-1-yl)oxyl (TEMPOL) as an additive to the electrolyte of photosensitive electrochromic device to effectively prevent the undesired overcoloring process. The resulting device with TEMPOL indeed did not undergo excessive coloration and showed great reversibility even after being exposed to sunlight for over 4 hours. Various concentrations of TEMPOL were applied to compare changes in the visible transmittance and coloring/bleaching kinetics of devices. In terms of energetic point of view, we proposed a plausible mechanism of TEMPOL to prevent excessive coloration.