• Korean Journal of Metals and Materials
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• v.49 no.2
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• pp.192-196
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• 2011

The multi-layered thin film with an ITO/Ag/ITO structure was produced on PET by using magnetron reactive sputtering method. First, 30 nm of ITO thin film was coated on PET by using normal temperature process. Then 20-52 nm of the Ag thin film was coated. Lastly, 30 nm of ITO thin film was coated on Ag layer. The sample of the 20 nm Ag thin film showed more than 70% transmission and a $2.7{\Omega}/{\Box}$ sheet resistance. When compared to the existing single-layered transparent conducting thin film, multi-layered film was found to be superior with about $5{\Omega}/{\Box}$ less sheet resistance. However, since the Ag layer became thinner, the band gap energy needs to be increased to more than 3.5 eV.

• Proceedings of the Materials Research Society of Korea Conference
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• 2002.05a
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• pp.69-69
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• 2002

• Proceedings of the Korean Vacuum Society Conference
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• 2009.02a
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• pp.269.1-269.1
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• 2009

• Proceedings of the Materials Research Society of Korea Conference
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• 2006.05a
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• pp.30.2-30.2
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• 2006

• Journal of the Korean Wood Science and Technology
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• v.36 no.6
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• pp.96-104
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• 2008

In this study, the observation of test pieces with an optical microscope was carried out after fabricating 4 groups of standard lacquer, in order to inquire into the ancient lacquering techniques. Group I had transparent reddish brown color, and the part of layer was indefinite, and the layer polished was easily distinguished. Group II had mostly transparent yellowish brown color, and it was possibility distinguished the layers when they were varnished with mixed lacquer after prime coating, and when they were varnished with lacquer as the prime coating. Group III set up membrane in the hardening process of the lacquer, and the lacquer and the unsaturated fatty acid of internal part was dried, so the top layer and the lacquer layer were separated and observed. Group IV: When the lacquer coat film of Group IV test pieces were observed in polarized light, the ferrous components were seen as the black and red color were mixed, and the silica crystals of silty soil were distinguished by reflection of lights. And the colors were distinguished as the lacquer layer of ruddle had red color, and the mixed lacquer of reddish lacquer and ruddle had the deep red color at the top and the bottom, but the middle part had the bright red color.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2010.06a
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• pp.40-40
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• 2010

Structural, electrical, and optical properties of atomic layer-controlled AI-doped ZnO (ZnO:Al) films grown on glass by atomic layer deposition (ALD) were characterized with various $Al_2O_3$ film contents for use as transparent electrodes. Unlike films made using sputtering methods, the diffraction peak position of the films grown by ALD based on alternate self-limiting surface chemical reactions moved progressively to a wider angle (red shift) with increasing $Al_2O_3$ film content, which seems to be evidence of Zn substitution in the film by layer-by-layer growth. By adjusting the $Al_2O_3$ film content, the electrical resistivity of ZnO:Al film with the $Al_2O_3$ film content of 2.96% reached the lowest electrical resistivity of $9.80{\times}10^{-4}\Omega{\cdot}cm$, in which the carrier mobility, carrier concentration, and optical transmittance were $11.20\;cm^2V^{-1}s^{-1}$, $5.69{\times}10^{20}\;cm^{-3}$, and 94.23%, respectively. Moreover, the estimated figure of merit value for the transparent conductive oxide applications from our best sample was $7.7\;m{\Omega}^{-1}$.

• Proceedings of the Korean Vacuum Society Conference
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• 2014.02a
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• pp.490.1-490.1
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• 2014

The ZnO nanowire (NW)-based nanogenerators (NGs) can have rectifying current and potential generated by the coupled piezoelectric and semiconducting properties of ZnO by variety of external stimulation such as pushing, bending and stretching. So, ZnO NGs needed to enhance durability for stable properties of NGs. The durability of the metal electrodes used in the typical ZnO nanogenerators(NGs) is unstable for both electrical and mechanical stability. Indium tin oxide (ITO) is used as transparent flexible electrode but because of high cost and limited supply of indium, the fragility and lack of flexibility of ITO layers, alternatives are being sought. It is expected that carbon nanotube and Ag nanowire conductive coatings could be a prospective replacement. In this work, we demonstrated transparent flexible ZnO NGs by using CNT/Ag nanowire hybrid electrode, in which electrical and mechanical stability of top electrode has been improved. We grew vertical type ZnO NW by hydrothermal method and ZnO NW was coated with hybrid silicone coating solution as capping layer to enhance adhesion and durability of ZNW. We coated the CNT/Ag nanowire hybrid electrode by using bar coating system on a capping layer. Power generation of the ZnO NG is measured by using a picoammeter, a oscilloscope and confirmed surface condition with FE-SEM. As a results, the NGs using the CNT/Ag NW hybrid electrode show 75% transparency at wavelength 550 nm and small change of the resistance of the electrode after bending test. It will be discussed the effect of the improved flexibility of top electrode on power generation enhancement of ZnO NGs.

• Journal of Sensor Science and Technology
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• v.24 no.1
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• pp.15-21
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• 2015

Transparent and conductive multilayer thin films consisting of three alternating layers FZTO/Ag/$WO_3$ have been fabricated by radio-frequency (RF) sputtering for the applications as transparent conducting oxides and the structural and optical properties of the resulting films were carefully studied. The single layer fluorine doped zinc tin oxide (FZTO) and tungsten oxide ($WO_3$) films grown at room temperature are found to have an amorphous structure. Multilayer structured electrode with a few nm Ag layer embedded in FZTO/Ag/$WO_3$ (FAW) was fabricated and showed the optical transmittance of 87.60 % in the visible range (${\lambda}=380{\sim}770nm$), quite low electrical resistivity of ${\sim}10^{-5}{\Omega}cm$ and the corresponding figure of merit ($T^{10}/R_s$) is equivalent to $3.0{\times}10^{-2}{\Omega}^{-1}$. The resultant power conversion efficiency of 2.50% of the multilayer based OPV is lower than that of the reference commercial ITO. Asymmetric D/M/D multilayer is a promising transparent conducting electrode material due to its low resistivity, high transmittance, low temperature deposition and low cost components.

• The Journal of the Acoustical Society of Korea
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• v.35 no.6
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• pp.491-500
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• 2016

The present study describes the acoustical characteristics of the new noise barriers which can control not only noise but also wind pressure by allowing air flow through barriers. In order to investigate the sound reduction index of the air transparent noise barrier, 17 models in total were examined with various size of openings and the volume of the resonators. As a result, it was found that the sound reduction index varies with the volume of the resonator and the area of the openings. Also, it was revealed that double layer of units has more sound reduction index than the single layer of unit at the frequency band from 400 Hz to 1250 Hz. This denoted that physical features of openings and resonators affect the sound reduction index of the air transparent noise barrier.

• Journal of the Korean Crystal Growth and Crystal Technology
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• v.13 no.5
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• pp.241-246
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• 2003

The transparent conducting thin film of ATO (antimony-doped tin oxide) was successfully fabricated on$SiO_2$/glass substrate by a sol-gel dip coating method. The crystalline phase of the ATO thin film was identified as SnO$_2$ major phase and the film thickness was about 100 nm/layer at the withdrawal speed of 50 mm/minute. Optical transmittance and electrical resistivity of the 400 nm-thick ATO thin film which was annealed under nitrogen atmosphere were 84% and $5.0\times 10^{-3}\Omega \textrm{cm}$, respectively. It was found that the $SiO_2$ layer inhibited Na ion diffusion and the formation of impurities like $Na_2SnO_3$ or SnO while increasing Sb ion concentration and higher ratio of $Sb^{5+}/Sb^{3+}$in the film. Annealing at nitrogen atmosphere leads to the reduction of $Sn^{4+}$ as well as $Sb^{5+}$ resulting in decrease of the electrical resistivity of the film.