• The Transactions of The Korean Institute of Electrical Engineers
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• v.59 no.1
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• pp.144-151
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• 2010

The shadowing effects lead to the serious power losses of the PV module. The shadowing effects are caused by several factors such as leafs, dust, antenna and clouds. The dye-sensitized solar cells are more economical than the conventional silicon solar cell that's why the dye-sensitized solar cells are recently focused on. We carried out research on the efficiency of the dye-sensitized solar cell depending on the level of shadow changing the formula of the circuit. The research on the efficiency of the large dye-sensitized solar cell depending on the level of shadow focused on commercialization was carried out. As the results, it is known that the series and parallel connection method is the best choice for the least losses of PV module assemblies. It is especially known that one more series connection is the best choice for the least losses about shadowing effects and current losses in the series and parallel connection.

• Journal of the Korean Vacuum Society
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• v.18 no.6
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• pp.488-493
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• 2009

We developed a simple method to control the length of carbon nanotube array by using oxygen plasma etching. In this way, we could obtain a carbon nanotube with a uniform length (20, 30, 50, $70\;{\mu}m$), that was parallel to the substrate. Moreover, our growing method of carbon nanotube array gives a uniform diameter ~3.5nm, which is consistent with our previous results. Using the same etching method, we demonstrated the carbon nanotube radio frequency identification (RFID) antenna. The results could be useful for carbon nanotube applications such as flexible and transparent conductive films.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.19 no.6
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• pp.538-546
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• 2006

We report on characteristics of specially designed inductively-coupled-plasma chemical vapor deposition (ICP-CVD) system for top-emitting organic light emitting diodes (TOLEDs). Using high-density plasma on the order of $10^{11}$ electrons/$cm^3$ generated by linear-type antennas connected in parallel and specially designed substrate cooling system, a 100 nm-thick transparent $SiN_{x}$ passivation layer was deposited on thin Mg-Ag cathode layer at substrate temperature below $50\;^{\circ}C$ without a noticeable plasma damage. In addition, substrate-mask chucking system equipped with a mechanical mask aligner enabled us to pattern the $SiN_x$ passivation layer without conventional lithography processes. Even at low substrate temperature, a $SiN_x$ passivation layer prepared by ICP-CVD shows a good moisture resistance and transparency of $5{\times}10^{-3}g/m^2/day$ and 92 %, respectively. This indicates that the ICP-CVD system is a promising methode to substitute conventional plasma enhanced CVD (PECVD) in thin film passivation process.