• 한국진공학회:학술대회논문집
• /
• 한국진공학회 2014년도 제46회 동계 정기학술대회 초록집
• /
• pp.329.1-329.1
• /
• 2014

In this paper, we report electrical, optical and structural properties of Al-doped zinc oxide (AZO) thin films deposited at different substrate temperatures and pressures. The films were prepared by radio frequency (RF) magnetron sputtering on glass substrates in argon (Ar) ambient. The X-ray diffraction analysis showed that the AZO films deposited at room temperature (RT) and 20 Pa were mostly oriented along a-axis with preferred orientation along (100) direction. There was an improvement in resistivity ($3.7{\times}10^{-3}{\Omega}-cm$) transmittance (95%) at constant substrate temperature (RT) and working pressure (20 Pa) using the Hall-effect measurement system and UV-vis spectroscopy, respectively. Our results have promising applications in low-cost transparent electronics, such as the thin-film solar cells and thin-film transistors due to favourable deposition conditions. Furthermore our film deposition method offers a procedure for preparing highly oriented (100) AZO films.

• 한국전기전자재료학회논문지
• /
• 제20권2호
• /
• pp.162-166
• /
• 2007

The ITO thin films were prepared by facing targets sputtering (FTS) system on polycarbonate (PC) substrate. The ITO thin films were deposited with a film thickness of 100 nm at room temperature. As a function of sputtering conditions, electrical and optical properties of prepared ITO thin films were measure. The electrical and optical characteristics of the ITO thin films were evaluted by Hall Effect Measurement (EGK) and UV/VIS spectrometer (HP), respectively. From the results, the ITO thin films was deposited with a resistivity $8{\times}10^{4}\;{\Omega}-cm$ and transmittance over 80 %.

• 반도체디스플레이기술학회지
• /
• 제11권1호
• /
• pp.1-5
• /
• 2012

Al doped ZnO (AZO) thin film was deposited by using Facing Target Sputtering (FTS) system. This work examined the properties of AZO thin film as a function of the substrate temperature. The sputtering targets were 4 inch diameter disks of AZO (ZnO : $Al_2O_3$ = 98 : 2 wt.% ). The properties of electrical, structural and optical were investigated by 4-point probe, Hall effect measurement, x-ray diffractometer (XRD), field-emitting scanning electron microscopy (FE-SEM), and UV/VIS spectrometer. The lowest resistivity of films was $5.67{\times}10^{-4}{\Omega}.cm$ and the average optical transmittance of the films was above 85% in the visible range.

• 반도체디스플레이기술학회지
• /
• 제16권1호
• /
• pp.112-115
• /
• 2017

ITO thin films were grown on the glass substrate under various oxygen gas flow and substrate temperature by using FTS (Facing Target Sputtering) system. To investigate properties of as-prepared films for transparent electrical devices, we employed four-point probe, UV-VIS spectrometer, X-ray diffractometer (XRD), scanning electron microscopy (SEM), Hall Effect measurement system and Atomic Force Microscope (AFM). As a results, all of prepared samples has high transmittance of over 80 % in the visible range (300-800 nm). Their resistivity increased as a function of oxygen gas flow and substrate temperature due to their crystal structure and oxygen defect in the films. As-prepared films have a resistivity of under $10^{-4}({\Omega}-cm)$.

• 한국전기전자재료학회:학술대회논문집
• /
• 한국전기전자재료학회 2008년도 하계학술대회 논문집 Vol.9
• /
• pp.403-404
• /
• 2008

In this study, we prepared ITO thin film on glass, polycarbonate (PC) and polyethersulfone (PES) substrate in Facing Targets sputtering (FTS) system. Properties of as-deposited thin films's aging change were investigated as a function of time placed in the air. The electrical and optical properties of as-deposited thin films were employed by a four point probe and an UV/VIS spectrometer, an X-ray diffractometer (XRD), a Field Emission Scanning Electron Microscope(FESEM) and a Hall Effect measurement. As a result, as time went by, transmittance of all films did not change but resistivity of films was decreasing.

• 한국전기전자재료학회:학술대회논문집
• /
• 한국전기전자재료학회 2008년도 하계학술대회 논문집 Vol.9
• /
• pp.405-406
• /
• 2008

The amorphous indium zinc oxide (IZO) thin films were deposited on polyethersulfone (PES) and glass substrates by facing targets sputtering. IZO thin films deposited as functions of gas flow ratio on PES and glass substrates, respectively. The electrical, optical and structural properties of IZO thin films were evaluated by a Hall Effect Measurement, an X-Ray Diffractormeter, UV/VIS spectrometer in visible range and a scanning electron microscopy, respectively. As-deposited IZO thin films exhibited resistivity of $5.4\times10^{-4}$ and $4.5\times10^{-4}$ [$\Omega$-cm] on PES and glass substrates, respectively. The optical transmittance showed over 85% in the visible region on PES and glass substrates.

• 대한전기학회:학술대회논문집
• /
• 대한전기학회 2006년도 추계학술대회 논문집 전기물성,응용부문
• /
• pp.69-70
• /
• 2006

The ITO thin films were prepared by Facing Targets Sputtering(FTS) method on polyethersulfon(PES) substrate. The ITO thin films were deposited with the film thickness of 100nm at room temperature and working gas pressure of 1 mTorr. As a function of sputtering conditions, electrical and optical properties of prepared ITO thin films were evaluated by Hall Effect Measurement(EGK) and UV-VIS spectrometer(HP), respectively. From the results, the ITO thin films was deposited was with a resistivity $8.3{\times}10^{-4}[{\Omega}-cm]$ and transmittance over 80% in the visible range.

• 한국전기전자재료학회논문지
• /
• 제20권12호
• /
• pp.1072-1076
• /
• 2007

We prepared the Al doped ZnO (AZO) thin film on polyethersulfon (PES) without any substrate heating by Facing Targets Sputtering (FTS) system. FTS system has two different facing targets. One is ZnO doped the content of Al 2 wt% and the other is Zn in order to decrease resistivity. The electrical, structural and optical properties of AZO thin films were investigated. To evaluate the as-deposited thin film properties, we employed four-point probe (CMT-R100nw, Changmin), Surface profiler (Alpha-step, Tencor), UV/VIS spectrometer (HP), X-ray diffractometer (XRD, Rigaku) and Field Emission Scanning Electron Microscopy (FESEM, Hitachi S-4700). As a result, We obtained that AZO thin film deposited on PES substrate at a DC Power of 150 W, working pressure of 1 mTorr and $O_2$ gas flow ratio of 0.2 exhibited the resistivity of $4.2{\times}10^{-4}\;[{\Omega}cm]$ and the optical transmittance of about 85 % in the visible range.

• 한국결정성장학회:학술대회논문집
• /
• 한국결정성장학회 1998년도 PROCEEDINGS OF THE 15TH KACG TECHNICAL MEETING-PACIFIC RIM 3 SATELLITE SYMPOSIUM SESSION 4, HOTEL HYUNDAI, KYONGJU, SEPTEMBER 20-23, 1998
• /
• pp.43-46
• /
• 1998

The effect of dopant and stoichiometry on the optical properties of LiNbO3 were studies. We prepared three samples, which are undoped, MgO doped LiNbO3 and near-stoichiometric LiNbO3 dielectric constant and transmittance in UV/VIS/IR light range were measured. The results showed that the features for high [Li]/[Nb] were similar to those for low [Li]/[Nb] but with high [Mg].

• 대한전기학회:학술대회논문집
• /
• 대한전기학회 2006년도 제37회 하계학술대회 논문집 C
• /
• pp.1500-1501
• /
• 2006

Because AZO thin film has the potential applications, Preparing AZO thin films on the polymer substrate has been widely studied. In this study, we prepared AZO thin films on polyethersulfon (PES) at room temperature. The AZO thin films were prepared at $O_2$ gas flow rate of 0.05 and sputtering power of 100W with different film thickness by facing targets sputtering method. The electrical, optical and crystallographic properties of AZO thin films were measured by Hall effect measurement system, UV/VIS spectrometer, SEM and XRD. From the results, we obtained AZO thin films with a low resistivity, a transmittance of over 80% and c-axis preferred orientation.