• Journal of IKEEE
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• v.8 no.1 s.14
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• pp.33-38
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• 2004

A multi-valued logic(MVL) pass gate is an important element to configure multi-valued logic. In this paper, we designed the Quaternary MIN(QMIN)/negated MIN(QNMIN) gate, the Quaternary MAX(QMAX)/negated MAX(QNMAX) gate using double pass-transistor logic(DPL) with neuron $MOS({\nu}MOS)$ threshold gate. DPL is improved the gate speed without increasing the input capacitance. It has a symmetrical arrangement and double-transmission characteristics. The threshold gates composed by ${\nu}MOS$ down literal circuit(DLC). The proposed gates get the valued to realize various multi threshold voltages. In this paper, these circuits are used 3V power supply voltage and parameter of 0.35um N-Well 2-poly 4-metal CMOS technology, and also represented HSPICE simulation results.

• Journal of IKEEE
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• v.19 no.3
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• pp.288-294
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• 2015

CRC function has been built into the high-speed semiconductor memory device in order to increase the reliability of data for high-speed operation. Also, DBI function is adopted to improve of data transmission speed. Conventional CRC(ATM-8 HEC code) method has a significant amounts of area-overhead(~XOR 700 gates), and processing time(6 stage XOR) is large. Therefore it leads to a considerable burden on the timing margin at the time of reading and writing of the low power memory devices for CRC calculations. In this paper, we propose a CRC method for low cost and high speed memory, which was improved 92% for area-overhead. For low-cost implementation of the CRC scheme by the DBI function it was supplemented by data bit error detection rate. And analyzing the error detection rate were compared with conventional CRC method.

• Korean Journal of Materials Research
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• v.17 no.4
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• pp.207-214
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• 2007

We fabricated thermally-evaporated 10 -Ni/(poly)Si and 10 -Ni/1 -Ir/(poly)Si structures to investigate the microstructure of nickel monosilicide at the elevated temperatures required for annealing. Silicides underwent rapid at the temperatures of 300-1200 for 40 seconds. Silicides suitable for the salicide process formed on top of both the single crystal silicon actives and the polycrystalline silicon gates. A four-point tester was used to investigate the sheet resistances. A transmission electron microscope(TEM) and an Auger depth profile scope were employed for the determination of vertical section structure and thickness. Nickel silicides with iridium on single crystal silicon actives and polycrystalline silicon gates shoed low resistance up to 1000 and 800, respectively, while the conventional nickle monosilicide showed low resistance below 700. Through TEM analysis, we confirmed that a uniform, 20 -thick silicide layer formed on the single-crystal silicon substrate for the Ir-inserted case while a non-uniform, agglomerated layer was observed for the conventional nickel silicide. On the polycrystalline silicon substrate, we confirmed that the conventional nickel silicide showed a unique silicon-silicide mixing at the high silicidation temperature of 1000. Auger depth profile analysis also supports the presence of thismixed microstructure. Our result implies that our newly proposed iridium-added NiSi process may widen the thermal process window for the salicide process and be suitable for nano-thick silicides.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.20 no.4
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• pp.308-317
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• 2007

We fabricated thermally-evaporated 10 nm-Ni/(poly)Si and 10 nm-$Ni_{0.5}Co_{0.5}$/(Poly)Si structures to investigate the microstructure of nickel silicides at the elevated temperatures required lot annealing. Silicides underwent rapid annealing at the temperatures of $600{\sim}1100^{\circ}C$ for 40 seconds. Silicides suitable for the salicide process formed on top of both the single crystal silicon actives and the polycrystalline silicon gates. A four-point tester was used to investigate the sheet resistances. A transmission electron microscope and an Auger depth profilescope were employed for the determination of vortical microstructure and thickness. Nickel silicides with cobalt on single crystal silicon actives and polycrystalline silicon gates showed low resistance up to $1100^{\circ}C$ and $900^{\circ}C$, respectively, while the conventional nickle monosilicide showed low resistance below $700^{\circ}C$. Through TEM analysis, we confirmed that a uniform, $10{\sim}15 nm$-thick silicide layer formed on the single-crystal silicon substrate for the Co-alloyed case while a non-uniform, agglomerated layer was observed for the conventional nickel silicide. On the polycrystalline silicon substrate, we confirmed that the conventional nickel silicide showed a unique silicon-silicide mixing at the high silicidation temperature of $1000^{\circ}C$. Auger depth profile analysis also supports the presence of this mixed microstructure. Our result implies that our newly proposed NiCo-alloy composite silicide process may widen the thermal process window for the salicide process and be suitable for nano-thick silicides.

• The Journal of Korean Institute of Communications and Information Sciences
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• v.30 no.3C
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• pp.176-184
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• 2005

In this paper, we implemented an Elliptic Curve Cryptography(ECC) processor for Digital Transmission Contents Protection (DTCP), which is a standard for protecting various digital contents in the network. Unlikely to other applications, DTCP uses ECC algorithm which is defined over GF(p), where p is a 160-bit prime integer. The core arithmetic operation of ECC is a scalar multiplication, and it involves large amount of very long integer modular multiplications and additions. In this paper, the modular multiplier was designed using the well-known Montgomery algorithm which was implemented with CSA(Carry-save Adder) and 4-level CLA(Carry-lookahead Adder). Our new ECC processor has been synthesized using Samsung 0.18 m CMOS standard cell library, and the maximum operation frequency was estimated 98 MHz, with the size about 65,000 gates. The resulting performance was 29.6 kbps, that is, it took 5.4 msec to process a 160-bit data frame. We assure that this performance is enough to be used for digital signature, encryption and decryption, and key exchanges in real time environments.

• Journal of the Korean Institute of Telematics and Electronics D
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• v.36D no.1
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• pp.47-56
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• 1999

As the density of logic gates of VLSI chips has rapidly increased, more number of I/O pins has been required. This results in bigger package size and higher packager cost. The package cost is higher than the cost of bare chips for high I/O count VLSI chips. As the density of logic gates increases, the reduction method of the number of I/O pins for a given complexity of logic gates is required. In this paper, we propose the novel I/O interface circuit using CTR (Constant-Transition-Rate) code to reduce 50% of the number of I/O pins. The rising and falling edges of the symbol pulse of CTR codes contain 2-bit digital data, respectively. Since each symbol of the proposed CTR codes contains 4-bit digital data, the symbol rate can be reduced by the factor of 2 compared with the conventional I/O interface circuit. Also, the simultaneous switching noise(SSN) can be reduced because the transition rate is constant and the transition point of the symbols is widely distributed. The channel encoder is implemented only logic circuits and the circuit of the channel decoder is designed using the over-sampling method. The proper operation of the designed I/O interface circuit was verified using. HSPICE simulation with 0.6 m CMOS SPICE parameters. The simulation results indicate that the data transmission rate of the proposed circuit using 0.6 m CMOS technology is more than 200 Mbps/pin. We implemented the proposed circuit using Altera's FPGA and confimed the operation with the data transfer rate of 22.5 Mbps/pin.

• Journal of the Korea Institute of Information and Communication Engineering
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• v.8 no.6
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• pp.1166-1174
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• 2004

In this paper, a design of RISC-based transmission wrapper processor for TCP/IP protocol stack is described. The processor consists of input and output buffer memory with dual bank structure, 32-bit RISC microprocessor core, DMA unit with on-the-fly checksum capability, and memory module. To handle the various modes of TCP/IP protocol, hardware-software codesign approach based on RISC processor is used rather than the conventional state machine design. To eliminate large delay time due to sequential executions of data transfer and checksum operation, DMA module which can execute the checksum operation along with data transfer operation is adopted. The designed processor exclusive of variable-size input/output buffer consists of about 23,700 gates and its maximum operating frequency is about 167MHz under 0.35${\mu}m$ CMOS technology.

• Journal of IKEEE
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• v.18 no.1
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• pp.37-44
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• 2014

In this paper we present an LDO based on an error amplifier. The designed error amplifier has a gain of 89.93dB at low frequencies. This amplifier's Bandwidth is 50.8MHz and its phase margin is $59.2^{\circ}C$. Also we proposed a BGR. This BGR has a low output variation with temperature and its PSRR at 1 KHz is -71.5dB. For a temperature variation from $-40^{\circ}C$ to $125^{\circ}C$ we have just 9.4mV variation in 3.3V LDO output. Also it is stable for a wide range of output load currents [0-200mA] and a $1{\mu}F$ output capacitor and its line regulation and especially load regulation is very small comparing other papers. The PSRR of proposed LDO is -61.16dB at 1 KHz. Also we designed it for several output voltages by using a ladder of resistors, transmission gates and a decoder. Low power consumption is the other superiority of this LDO which is just 1.55mW in full load. The circuit was designed in $0.35{\mu}m$ CMOS process.

• The Journal of Korean Institute of Communications and Information Sciences
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• v.23 no.8
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• pp.1941-1951
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• 1998

In this paper, hardware circuit that performs functions of IEEE 802.11 wireless LAN frequency hopping PLCP protocol is designed using 0.8 um CMOS cmn8a technology of the COMPASS. Transmission rate of the designed hardware is 1Mbps. The designed circuit have about 6300 gates and $2.5{\times}2.5mm^2$ area. In order to verify the circuit, two PLCP circuits are interconnected and frames are transmitted from one PLCP circuit to the other PLCP circuit. As a results of the simulation, we conclude that the designed PLCP circuit works well as the IEEE 802.11 standard specification.

• Journal of IKEEE
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• v.21 no.3
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• pp.240-243
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• 2017

CAN (controller area network) suffers from data bottleneck since the number of in-vehicle electronic modules significantly increases. To mitigate this problem, CAN-FD (CAN with flexible data rate) has been proposed. Transmission speed is same with CAN in arbitration phase but much higher than CAN in data phase, which successfully achieves both compatibility and efficiency. In this paper, a CAN-FD controller was designed in Verilog HDL and it was implemented and verified in FPGA. The designed controller can perform CAN-FD version 1.0 and CAN version 2.0A, 2.0B. Synthesized in 0.18um technology, its size is about 46,300 gates.