• Transactions of the Korean Society of Mechanical Engineers B
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• v.38 no.8
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• pp.695-700
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• 2014

In the present study, the melting temperature depression of Sn nanoparticles manufactured using the modified evaporation method was investigated. For this purpose, a modified evaporation method with mass productivity was developed. Using the manufacturing process, Sn nanoparticles of 10 nm size was manufactured in benzyl alcohol solution to prevent oxidation. To examine the morphology and size distribution of the nanonoparticles, a transmission electron microscope was used. The melting temperature of the Sn nanoparticles was measured using a Differential scanning calorimetry (DSC) which can calculate the endothermic energy during the phase changing process and an X-ray photoelectron spectroscopy (XPS) used for observing the manufactured Sn nanoparticle compound. The melting temperature of the Sn nanoparticles was observed to be $129^{\circ}C$, which is $44^{\circ}C$ lower than that of the bulk material. Finally, the melting temperature was compared with the Gibbs Thomson and Lai's equations, which can predict the melting temperature according to the particle size. Based on the experimental results, the melting temperature of the Sn nanoparticles was found to match well with those recommended by the Lai's equation.

• Korean Journal of Environmental Agriculture
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• v.24 no.4
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• pp.379-385
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• 2005

This study was conducted to find out a useful bioremediation technology for heavy metal contaminated soil and water. We isolated strain CPB from heavy metal contaminated soil and evaluated the tolerance level and adsorption capacity of strain CPB to heavy metals (Strain is not determined yet). Strain CPB showed variable tolerance limit to different kinds heavy metal or concentrations of heavy metals. The growth of strain CPB was significantly inhibited by mixed heavy metals (Cd+Cu+Pb+Zn) than that of by single heavy metal. Strain CPB showed high binding capacity with Pb (Pb>Cd>Cu>Zn). In general, strain CPB showed high uptake of heavy metals such as Pb, Cd and Cu. It was observed that the capacity of heavy metal uptake from mixture of heavy metals was reduced in comparison with single heavy metal treatment. But total contents of heavy metal bound with cell in mixed heavy metal showed higher than in single heavy metal treatment. Heavy metal adsorption in cells was affected by several external factors, such as temperature and pH etc.. The optimum temperature and pH of the adsorption of heavy metal into cells were ca. $25{\sim}35^{\circ}C$ and pH ca. $5{\sim}7$, respectively. A large number of the electron dense particles were found mainly on the cell wall and cell membrane fractions, which was determined by transmission electron microscope. Energy dispersive X-ray spectroscopy revealed that the electron dense particles were the heavy metal complexes the substances binding with heavy metals.

• 한국신재생에너지학회:학술대회논문집
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• 2005.11a
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• pp.561-566
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• 2005

Polycrystalline silicon films were deposited using hot wire CVD (HWCVD). The deposition of silicon thin films was approached by the theory of charged clusters (TCC). The TCC states that thin films grow by self-assembly of charged clusters or nanoparticles that have nucleated in the gas phase during the normal thin film process. Negatively charged clusters of a few nanometer in size were captured on a transmission electron microscopy (TEM) grid and observed by TEM. The negatively charged clusters are believed to have been generated by ion-induced nucleation on negative ions, which are produced by negative surface ionization on a tungsten hot wire. The electric current on the substrate carried by the negatively charged clusters during deposition was measured to be approximately $-2{\mu}A/cm^2$. Silicon thin films were deposited at different $SiH_4$ and $H_2$ gas mixtures and filament temperatures. The crystalline volume fraction, grain size and the growth rate of the films were measured by Raman spectroscopy, X-ray diffraction and scanning electron microscopy. The deposit ion behavior of the si1icon thin films was related to properties of the charged clusters, which were in turn controlled by the process conditions. In order to verify the effect of the charged clusters on the growth behavior, three different electric biases of -200 V, 0 V and +25 V were applied to the substrate during the process, The deposition rate at an applied bias of +25 V was greater than that at 0 V and -200 V, which means that the si1icon film deposition was the result of the deposit ion of charged clusters generated in the gas phase. The working pressures had a large effect on the growth rate dependency on the bias appled to the substrate, which indicates that pressure affects the charging ratio of neutral to negatively charged clusters. These results suggest that polycrystalline silicon thin films with high crystalline volume fraction and large grain size can be produced by control1ing the behavior of the charged clusters generated in the gas phase of a normal HWCVD reactor.

• Korean Journal of Materials Research
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• v.21 no.2
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• pp.111-114
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• 2011

As a growth-template of ZnO nanorods (NR), a hexagonal $\beta-Ni(OH)_2$ nanosheet (NS) was synthesized with the low temperature hydrothermal process and its microstructure was investigated using a high resolution scanning electron microscope and transmission electron microscope. Zinc nitrate hexahydrate was hydrolyzed by hexamethylenetetramine with the same mole ratio and various temperatures, growth times and total concentrations. The optimum hydrothermal processing condition for the best crystallinity of hexagonal $\beta-Ni(OH)_2$ NS was determined to be with 3.5 mM at $95^{\circ}C$ for 2 h. The prepared $Ni(OH)_2$ NSs were two dimensionally arrayed on a substrate using an air-water interface tapping method, and the quality of the array was evaluated using an X-ray diffractometer. Because of the similarity of the lattice parameter of the (0001) plane between ZnO (wurzite a = 0.325 nm, c = 0.521 nm) and hexagonal $\beta-Ni(OH)_2$ (brucite a = 0.313 nm, c = 0.461 nm) on the synthesized hexagonal $\beta-Ni(OH)_2$ NS, ZnO NRs were successfully grown without seeds. At 35 mM of divalent Zn ion, the entire hexagonal $\beta-Ni(OH)_2$ NSs were covered with ZnO NRs, and this result implies the possibility that ZnO NR can be grown epitaxially on hexagonal $\beta-Ni(OH)_2$ NS by a soluble process. After the thermal annealing process, $\beta-Ni(OH)_2$ changed into NiO, which has the property of a p-type semiconductor, and then ZnO and NiO formed a p-n junction for a large area light emitting diode.

• Korean Journal of Environmental Agriculture
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• v.16 no.1
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• pp.48-54
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• 1997

This study was performed to develop the biological treatment technology of wastewater polluted with heavy metals. The copper-tolerant bacteria, Pseudomonas stutzeri which possessed the ability to accumulate copper, was isolated from mine wastewaters polluted with various heavy metals. The characteristics of copper accumulation in the cells and the recovery of the copper from the cells accumulating zinc, were investigated. Removal rate of copper from the solution containing 100mg/l of copper by copper-tolerant bacteria was more than 78% at 2 days after inoculation with the cells. A large number of the electron-dense granules were found mainly on the cell wall and cell membrane fractions, when determined by transmission electron microscopy. Energy dispersive X-ray spectroscopy revealed that the electron-dense granules were copper complex with the substances binding copper. The copper accumulated into the cells was not desorbed by deistilled water, but more than 80% of the copper accumulated was desorbed by 0.1M-EDTA solution. The residues of the cells after combustion at $550^{\circ}C$ amounted to about 23.2% of the dry weight of the cells. EDS analysis showed that residues were relatively pure copper compound containing more than 78.4% of copper.

• Journal of the Korea Academia-Industrial cooperation Society
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• v.9 no.1
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• pp.16-22
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• 2008

We fabricated thermally-evaporated 10 nm-Ni/30 nm and 70 nm Poly-Si/200 nm-$SiO_2/Si$ structures to investigate the thermal stability of nickel silicides formed by rapid thermal annealing(RTA) of the temperature of $300{\sim}1100^{\circ}C$ for 40 seconds. We employed for a four-point tester, field emission scanning electron microscope(FE-SEM), transmission electron microscope(TEM), high resolution X-ray diffraction(HRIXRD), and scanning probe microscope(SPM) in order to examine the sheet resistance, in-plane microstructure, cross-sectional microstructure evolution, phase transformation, and surface roughness, respectively. The silicide on 30 nm polysilicon substrate was stable at temperature up to $900^{\circ}C$, while the one on 70 nm substrate showed the conventional $NiSi_2$ transformation temperature of $700^{\circ}C$. The HRXRD result also supported the existence of NiSi-phase up to $900^{\circ}C$ for the Ni silicide on the 30 nm polysilicon substrate. FE-SEM and TEM confirmed that 40 nm thick uniform silicide layer and island-like agglomerated silicide phase of $1{\mu}m$ pitch without residual polysilicon were formed on 30 nm polysilicon substrate at $700^{\circ}C\;and\;1000^{\circ}C$, respectively. All silicides were nonuniform and formed on top of the residual polysilicon for 70 nm polysilicon substrates. Through SPM analysis, we confirmed the surface roughness was below 17 nm, which implied the advantage on FUSI gate of CMOS process. Our results imply that we may tune the thermal stability of nickel monosilicide by reducing the height of polysilicon gate.

• Journal of the Korea Academia-Industrial cooperation Society
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• v.8 no.2
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• pp.195-200
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• 2007

We fabricated thermally-evaporated 10 nm-Ni/70 w-Poly-Si/200 $nm-SiO_2/Si$ and $10nm-Ni_{0.5}Co_{0.5}/70$ nm-Poly-Si/200 $nm-SiO_2/Si$ structures to investigate the microstructure of nickel monosilicide at the elevated temperatures required fur annealing. Silicides underwent rapid anneal at the temperatures of $600{\sim}1100^{\circ}C$ for 40 seconds. Silicides suitable for the salicide process formed on top of the polycrystalline silicon substrate mimicking the gates. A four-point tester was used to investigate the sheet resistances. A transmission electron microscope and an Auger depth profile scope were employed for the determination of cross sectional microstructure and thickness. 20nm thick nickel cobalt composite silicides on polycrystalline silicon showed low resistance up to $900^{\circ}C$, while the conventional nickle silicide showed low resistance below $900^{\circ}C$. Through TEM analysis, we confirmed that the 70nm-thick nickel cobalt composite silicide showed a unique silicon-silicide mixing at the high silicidation temperature of $1000^{\circ}C$. We identified $Ni_3Si_2,\;CoSi_2$ phase at $700^{\circ}C$ using an X-ray diffractometer. Auger depth profile analysis also supports the presence of this mixed microstructure. Our result implies that our newly proposed NiCo composite silicide from NiCo alloy films process may widen the thermal process window for the salicide process and be suitable for nano-thick silicides.

• KIPS Transactions on Software and Data Engineering
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• v.7 no.10
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• pp.377-382
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• 2018

This study deals with internal state and tissue density analysis methods for red ginseng grade determination. For internal measurement of red ginseng, there have been various studies on nondestructive testing methods since the 1990s, It was difficult to grasp the most important inner hole and inside whites in the grading. So in this study, we developed a closed capturing device for infra-red illumination environment, and developed an internal measurement system that can detect the presence and diameter of inner hole and inside whites. Made devices consisted of infrared lights with a high transmission rate of red ginseng in 920 nanometer wave band, a infra-red camera and a Y axis actuator with a red ginseng automatically controlled focus on the camera. The proposed algorithm performs an auto-focus system on the Y-axis actuator to automatically adjust the sharp focus of the object according to the size and thickness. Then red ginseng is rotated $360^{\circ}$ at $1^{\circ}$ intervals and 360 total images are acquired, and reconstructed as a sinogram through Radon transform and Back-projection algorithm was performed to acquire internal images of red ginseng. As a result of the algorithm, it was possible to acquire internal cross-sectional image regardless of the thickness and shape of red ginseng. In the future, if more than 10,000 different shapes and sizes of red ginseng internal cross-sectional image are acquired and the classification criterion is applied, it can be used as a reliable automated ginseng grade automatic measurement method.

• Korean Journal of Materials Research
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• v.5 no.2
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• pp.169-177
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• 1995

The diffusion barrier property of 100-nm-thick titanium nitride (TiN) film between Cu and Si was investigated using sheet resistance measurements, etch-pit observation, x-ray diffractometry, Auger electron spectroscopy, and transmission electron microscopy. The TiN barrier fails due to the formation of crystalline defects (dislocations) and precipitates (presumably Cu-silicides) in the Si substrate which result from the predominant in-diffusion of Cu through the TiN layer. In contrast with the case of Al, it is identified that the TiN barrier fails only the in-diffusion of Cu because there is no indication of Si pits in the Si substrate. In addition, it appears that the stuffing of TiN does not improve the diffusion barrier property in the Cu/TiN/Si structure. This indicates that in the case of Al, the chemical effect that impedes the diffusion of Al by the reaction of Al with $TiO_{2}$ which is present in the grain boundaries of TIN is very improtant. On the while, in the case of Cu, there is no chemical effect because Cu oxides, such as $Cu_{2}O$ or CuO, is thermodynamically unstable in comparison with $TiO_{2}$. For this reason, it is considered that the effect of stuffing of TiN on the diffusion barrier property is not significant in the Cu/ TiN/Si structure.

• Korean Journal of Materials Research
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• v.22 no.1
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• pp.54-60
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• 2012

The particle size of MgO was examined as a function of the Na content in $Mg(OH)_2$ powders and the calcination temperature. $Mg(OH)_2$ suspension was obtained by dropwise precipitation of $Mg(NO_3)_2{\cdot}6H_2O$ and NaOH solutions. The suspension was diluted by varying the dilution volume ratio of distilled water to $Mg(OH)_2$ suspension to change the Na salt concentration in the suspension. $Mg(OH)_2$ slurry was filtered and dried at $60^{\circ}C$ under vacuum, and then its $Mg(OH)_2$ powder was calcined to produce MgO with different amount of Na content at $500\sim900^{\circ}C$ under air. Investigation of the physical and chemical properties of the various MgO powders with dilution ratio and calcination temperature variation was done by X-ray diffraction, transmission electron microscopy, BET specific surface area and thermal gravimetric analysis. It was observed that MgO particle size could depend on the condition of calcination temperature and dilution ratio of the $Mg(OH)_2$ suspension. The particle size of the MgO depends on the Na content remaining in the $Mg(OH)_2$ powder, which powder was prepared by changing the dilution ratio of the $Mg(OH)_2$ suspension. This change increased as the calcination temperature increased and decreased as the dilution ratio increased. The growth of MgO particle size according to the increase of temperature was more effective when there was a relatively high content of Na. The increase of Na content lowered the temperature at which decomposition of $Mg(OH)_2$ to MgO took place, thereby promoting the crystal growth of MgO.