• Journal of Magnetics
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• v.18 no.2
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• pp.178-182
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• 2013

We have developed a new non-conventional electron paramagnetic resonance (EPR) spectrometer, in which no resonant cavity was used. We previously demonstrated a wide frequency range operation of an EPR spectrometer using two loop antennas, one for a microwave transmission and the other for signal detection [1]. In contrast to Ref. [1], the utilization of a microstrip antenna as a transmitter enhanced a capability of wide-band operation. The replacement of conventional capacitors with varactor diodes makes resonance condition easily reproducible without any mechanical action during tuning and matching procedure since the capacitance of the diodes is controlled electronically. The operation of the new EPR spectrometer was tested by measuring a signal of 1,1-diphenil-2-picrylhydrazyl (DPPH) sample in the frequency range of 0.8-2.5 GHz.

• Journal of KSNVE
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• v.10 no.1
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• pp.33-40
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• 2000

With the increased requirement for automobile noise, a design fo mufflers with higher performances becomes more important in recent days. For a design of some mufflers, it must satisfy both minimizing back pressure and maximizing sound attenuation in broad range of frequecny. Even for a simple Helmholtz resonator, an important element in a muffler, a resonator design with accurate resonant frequency is difficult if one want to consider standing waves within the cavity. In this paper, the genetic algorithm, one of the optimization technique with high capability of global fittest solution and robust convergence, is applied to the design process of mufflers. Results show that the genetic algorithm can be successfully and efficiently used to find the fittest model for both mufflers and Helmoltz resonators.

• Korean Journal of Optics and Photonics
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• v.16 no.5
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• pp.476-478
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• 2005

We have fabricated a Fabry-Perot etalon around $1.3\;{\mu}m$ wavelength utilizing $Al_{2}O_3$ and a-Si thin films. A full width at half maximum of ${\sim}12.1nm$ and a finesse value of 53 were found from the measured resonant transmission spectra. Single thin film of $Al_{2}O_3$ was analyzed by spectroscopic ellipsometry. A refractive index of a-Si thin film was measured as 3.120 in the real part and 0.002 in the imaginary part, respectively. The thin-film pairs of $Al_{2}O_3$ and a-Si are applicable to output mirrors of vertical-cavity surface-emitting lasers at $1.3{\mu}m$ waveband.

• Advances in nano research
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• v.12 no.1
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• pp.25-35
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• 2022

Within the framework of the density functional theory combined with the method of non-equilibrium Green's functions (DFT + NEGF), the features of electron transport in fullerene nanojunctions, which are «core-shell» nanoobjects made of a combination of fullerenes of different diameters C₂₀, C₈₀, C₁₈₀, placed between gold electrodes (in a nanogap), are studied. Their transmission spectra, the density of state, current-voltage characteristics and differential conductivity are determined. It was shown that in the energy range of -0.45-0.45 eV in the transmission spectrum of the "Au-C₁₈₀-Au" nanojunction appears a HOMO-LUMO gap with a width of 0.9 eV; when small-sized fullerenes C₂₀, C₈₀ are intercalation into the cavity C₁₈₀ the gap disappears, and a series of resonant structures are observed on their spectra. It has been established that distinct Coulomb steps appear on the current-voltage characteristics of the "Au-C₁₈₀-Au" nanojunction, but on the current-voltage characteristics "Au-C₈₀@C₁₈₀-Au", "Au-(C₂₀@C₈₀)@C₁₈₀-Au" these step structures are blurred due to a decrease in Coulomb energy. An increase in the number of Coulomb features on the dI/dV spectra of core-shell fullerene nanojunctions was revealed in comparison with nanojunctions based on fullerene C₆₀, which makes it possible to create high-speed single-electron devices on their basis. Models of single-electron transistors (SET) based on fullerene nanojunctions "Au-C₁₈₀-Au", "Au-C₈₀@C₁₈₀-Au" and "Au-(C₂₀@C₈₀)@C₁₈₀-Au" are considered. Their charge stability diagrams are analyzed and it is shown that SET based on C₈₀@C₁₈₀-, (C₂₀@C₈₀)@C₁₈₀- nanojunctions is output from the Coulomb blockade mode with the lowest drain-to-source voltage.