• Title/Summary/Keyword: Transmission Properties

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Structure and optical properties of vapor grown In2O3: Ga nano-/microcrystals

  • Sanchez, Diego Leon;Ramon, Jesus Alberto Ramos;Zaldivar, Manuel Herrera;Pal, Umapada;Rosas, Efrain Rubio
    • Advances in nano research
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    • v.3 no.2
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    • pp.81-96
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    • 2015
  • Octahedral shaped single crystalline undoped and Ga-doped indium oxide nano-and microcrystals were fabricated using vapor-solid growth process. Effects of Ga doping on the crystallinity, defect structure, and optical properties of the nano-/microstructures have been studied using scanning electron microscopy, microRaman spectroscopy, transmission electron microscopy and cathodoluminescence spectroscopy. It has been observed that incorporation of Ga does not affect the morphology of $In_2O_3$ structures due to its smaller ionic radius, and similar oxidation state as that of In. However, incorporation of Ga in high concentration (~3.31 atom %) causes lattice compression, reduces optical band gap and defect induced CL emissions of $In_2O_3$ nano-/microcrystals. The single crystalline Ga-doped, $In_2O_3$ nano-/microcrystals with low defect contents are promising for optoelectronic applications.

Study on the Optical Properties Change according to the LED Illumination Collimator Lens Design Parameters (LED 조명용 Collimator Lens 설계변수에 따른 광학적 특성 변화에 관한 연구)

  • Won, Ye-Lim;Park, Gwang-Il;Jang, Jae-Hyeon;Kim, Jong-Tae;Yu, Young-Moon
    • Journal of the Korean Institute of Illuminating and Electrical Installation Engineers
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    • v.30 no.3
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    • pp.21-29
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    • 2016
  • In this paper, optical tracking and analysis was carried out to find the optical properties with respect to various geometric design parameters of collimator lens which is very efficient when collect the light. As a result, a whole, ellipse incident part can obtain a high light efficiency and a narrow beam angle, and angled cylinder incident part is confirmed to obtain high efficiency and a narrow beam angle at a certain height or more. When Transmission part have a specific surface which can reflect the light in forward direction, a good optical properties was confirmed.

Plasma-polymerized Styrene Prganic thin Film as Hybrid OLEDs Encapsulation (플라즈마 중합된 Styrene을 유기박막으로 사용한 하이브리드형 OLED 봉지기술)

  • Jung, Kun-Soo;Lee, Boong-Joo;Shin, Paik-Kyun
    • The Transactions of The Korean Institute of Electrical Engineers
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    • v.63 no.10
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    • pp.1412-1416
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    • 2014
  • We report thin-film organic moisture barriers based on polystyrene(PS) laminates deposition by PECVD for an encapsulation of OLEDs. The organic polystyrene thin-film has the benzene ring structure and high hydrophobic characteristics and it was polymerized by PECVD in dry process. Life time properties of Ca test were obtained 32 minutes at the RF 100W process conditions. From the AFM test, the roughness of multi-layer thin-film was more excellent rather than that of a single-layer thin-film. In addition, 5 layers of the multi-layer film properties were obtained 45 minutes. So that the optical and electrical properties were not affected with these plasma polymerized organic thin-film encapsulation. For life time improvement, the inorganic $Al_2O_3$ thin-film were deposited 5nm using ALD atomic layer deposition. The WVTR(Water Vaper Transmission Rate) value of hybrid thin-film encapsulation in the optimum process conditions was resulted by less than $10-3g/m^2/day$. From the results of experiment, plasma polymerized hybrid encapsulation was suggested as the flexible display applications.

Characterization of Mechanical Properties in the Heat Affected Zones of Alloy 82/182 Dissimilar Metal Weld Joint (Alloy 82/182 이종금속 용접부 열영향부의 계계적물성치 파악)

  • Kim, Jin-Weon;Kim, Jong-Sung;Lee, Kyoung-Soo
    • Journal of the Korean Society of Safety
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    • v.23 no.6
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    • pp.28-33
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    • 2008
  • This paper presents the characteristics of mechanical properties within the heat affected zones(HAZs) of dissimilar metal weld joint between SA508 Gr.1a and F3l6 stainless steel(SS) with Alloy 82/182 filler metal. Tensile tests were performed using small-size specimens taken from the heat affected regions close to both fusion lines of weld, and the micro-structures were examined using optical microscope(OM) and transmission microscope(TEM). The results showed that significant gradients of the yield stress(YS), ultimate tensile stress(UTS), and elongations were observed within the HAZ of SA508 Gr.1a. This was attributed to the different microstructures within the HAZ developed during the welding process. In the HAZ of F316 SS, however, the welding effect dominated the YS and elongation rather than UTS. TEM micrographs demonstrated these characteristics of the HAZ of F316 SS was associated with a dislocation-induced strain hardening.

Transparent conducting ZnO thin films deposited by a Sol-gel method (솔젤법으로 제작한 ZnO 박막의 광전도특성 연구)

  • Kim, Gyeong-Tae;Kim, Gwan-Ha;Kim, Jong-Gyu;U, Jong-Chang;Kim, Chang-Il
    • Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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    • 2007.06a
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    • pp.320-320
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    • 2007
  • Nowadays, ZnO thin films are investigated as transparent conductive electrodes for use in optoelectronics devices including flat displays, thin films transistors, solar cells because of their unique optical and electrical properties. For the use as transparent conductive electrodes, a film has to have low resistivity, high absorption in the ultra violent light region and high optical transmission in the visible region. Different technologies such as electron beam evaporation, chemical vapor deposition, laser evaporation, DC and RF magnetron sputtering and have been reported to produce thin films of ZnO with adequate performance for applications. However, highly transparent and conductive doped-ZnO thin films deposited by a metal-organic decomposition method have not been reported before. In this work, the effect of dopant concentration, heating treatment and annealing in areducing atmosphere on the structure, morphology, electrical and optical properties of ZnO thin films deposited on glass substrates by a Sol-gel method are investigated.

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Preparation and Properties of $CuSb_2O_6$-doped $SnO_2$ Thin Films by Pulsed Laser Deposition (PLD법으로 제조된 $CuSb_2O_6-SnO_2$ 박막의 전기.광학적 특성)

  • Lee, Chae-Jong;Byun, Seung-Hyun;Lee, Hee-Young;Heo, Young-Woo;Lee, Joon-Hyung;Kim, Jeong-Joo
    • Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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    • 2007.11a
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    • pp.262-263
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    • 2007
  • Effect of co-doping on optical and electrical properties of $SnO_2$ based thin films were studied. $SnO_2$ ceramic targets with up to 50mol% $CuSb_2O_6$ were prepared by sintering mixed-oxide compact in the temperature range of $1100^{\circ}C{\sim}1300^{\circ}C$ in air. Thin films were then deposited onto glass substrates by pulsed laser deposition where substrate temperature was maintained in the range of $500{\sim}650^{\circ}C$ with oxygen pressure of 3m~7.5mTorr and energy density of $1Jcm^{-2}$. It was found that with the increase amount of dopant, the electrical properties of thin films tended to improve with the smallest resistivity value obtained at about 8mol% doping, further increase, however, usually impaired the optical transmission in the visible range.

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Effects of rapid thermal annealing and bias sputtering on the structure and properties of ZnO:Al films deposited by DC magnetron sputtering (Bias를 인가한 DC magnetron sputtering 법으로 증착된 ZnO:Al 박막의 구조적 특성과 RTP의 annealing에 따른 영향)

  • Park, Kyeong-Seok;Lee, Kyu-Seok;Lee, Sung-Wook;Park, Min-Woo;Kwak, Dong-Joo;Lim, Dong-Gun
    • Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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    • 2005.07a
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    • pp.500-501
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    • 2005
  • Aluminum doped zinc oxide films (ZnO:Al) were deposited on glass substrate by DC magnetron sputtering from a ZnO target mixed with 2 wt% $Al_2O_3$. The effects of substrate bias on the electrical properties and film structure were studied. Films deposited with positive bias have been annealed at $600^{\circ}C$ using rapid thermal anneal (RTA) process. The effects of RTA on the evolution of film microstructure are to be also studied using X-ray diffraction, transmission electron microscopy, and atomic force microscopy. Positive bias sputtering may induce lattice defects caused by electron bombardments during deposition. The as-deposited film microstructure evolves from the film with high defect density to more stable film condition. The electrical properties of the films after RTA process were also studied and the results were correlated with the evolution of film microstructures.

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PTC/NTC Properties of EEA/Carbon nanotube and Carbon Black Composites (EEA/탄소나노튜브와 카본블랙 복합체의 PTC/NTC특성)

  • Yang, Jong-Seok;Lee, Kyoung-Yong;Choi, Sung-Hun;Lee, Jae-Hyeoung;Park, Dae-Hee
    • Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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    • 2006.06a
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    • pp.236-237
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    • 2006
  • We have investigated volume resistivity showed by changing the content of Carbon nanotube and carbon black which is the component parts of semiconducting shield in underground power transmission cable. Specimens were made of sheet form with the six of specimens for measurement. Volume resistivity of specimens was measured by volume resistivity meter after 10 minutes in the preheated oven of both $23{\pm}1[^{\circ}C]$ and $90{\pm}1[^{\circ}C]$. The volume resistivity decreased by adding Carbon nanotube and carbon black. Also the volume resistivity had different properties because of PTC/NTC tendencies at between $23[^{\circ}C]$ and $90[^{\circ}C]$. We experimented with electric properties of semiconducting components with fewer Carbon nanotube than carbon black.

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Properties Evaluation on Aluminum for Die-casting(ADC 12) to Packing Case of Composite Sensor (복합센서 케이스용 알루미늄 다이캐스팅(ADC 12) 합금의 특성평가)

  • Son, Jae-Hwan;Oh, Sang-Kyun;Kim, Dong-Bae;Han, Chang-Woo
    • Journal of the Korean Society of Industry Convergence
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    • v.9 no.2
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    • pp.141-145
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    • 2006
  • In case of sense case manufactured by method of outage capacity, sensitivity is declined by outside effect and method of the photo electricity has a problem in transmission. therefore, packing case of composite sense should be developed to improve such a problem about influence of outside environment and its property evaluation has been performed. Mechanical property and result of analysis & test evaluation of Mat'l on aluminum die-casting(ADC 12type) Mat'l developed are as following. Tensile test piece, No. 4 of KS B 0801, has been applied to mechanical property test of Mat'l and It has been tested by method of metal mat'l tensile test(KS B 0802 : 2003). It can be found that physical property to KS(Korea Standard) is excellent. and homogeneous mechanical property appears. Test of Mat'l analysis has been performed by using OE Spectrometer, according to ASTM E 1251 : 1994 regulation. Consequently, good and homogeneous component contents classified by element to standard, except for Fe, have been obtained with coordination of Fe content as below 1.3% from composition standard of Aluminum Die-casting.

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Roles of Fundamental and Additional Hardening Precipitates on the Changes of Mechanical Properties and Electrical Resistivity in Al-Li Alloys Containing Cu and Mg (Cu, Mg을 함유한 Al-Li 합금의 기계적 성질과 전기저항 변화에 미치는 기본 및 추가 강화상들의 역할)

  • Chung, D.S.;Song, K.H.;Woo, K.D.
    • Journal of the Korean Society for Heat Treatment
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    • v.7 no.2
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    • pp.77-87
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    • 1994
  • Roles of fundamental and additional hardening precipitates on the changes of mechanical properties and electrical resistivity during precipitation decomposition in binary Al-Li, ternaty Al-Li-Cu and multi-Li-Cu-Mg-Zr alloys have been investigated by the detailed measurement of electrical resistivity, hardness and tensile strength and the observation of transmission electron micrographs. Peek hardness and tensile strength in multi-component Al-Li-Cu-Mg-Zr Alloy had higher than that of the other alloys and the results of measurement of hardness, strength and electrical resistivity in each alloys aged at 90 and $190^{\circ}C$, precipitation behaviors and mechanical properties in binary, ternary and multi-component Al-Li alloys were contributed to the ${\delta}^{\prime}$ precursory phase of ${\delta}^{\prime}$, $T_1$, G.P.B. zone and S' phases, repectively.

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