• Korean Journal of Materials Research
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• v.8 no.6
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• pp.484-492
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• 1998

The formation mechanism of the epitaxial cobalt silicide from Co/Ti/OOO) Si structure has been investigated. The transition temperature of CoSi to CoSi, was found to increase with increasing the Ti interlayer thickness, which may be owing to the occupation of the tetrahedral sites by Ti atoms in the CoSi crystal structure as well as the blocking effect of the Ti interlayer on the diffusion of Co. Also, the Co- Ti-O ternary compound formed at the metal! Si interface at the begining of silicidation, which seems to play an important role in epitaxial growth of Co silicide. The final layer structures obtained after a rapid thermal annealing of the Cot Ti/( 100) Si bi-layer structure turned out to be Ti oxide/Co- Ti-Si/epi-$CoSi_2$/OOO)

• Journal of the Korean institute of surface engineering
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• v.56 no.1
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• pp.104-114
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• 2023

Three dimensional (3D) porous structures consisting of Cu@CoO core-shell-type nano-dendrites were synthesized and tested as the anode materials in lithium secondary batteries. For this purpose, first, the 3D porous films comprising Cu@Co core-shell-type nano-dendrites with various thicknesses were fabricated through the electrochemical co-deposition of Cu and Co. Then the Co shells were selectively anodized to form Co hydroxides, which was finally dehydrated to get Cu@CoO nanodendrites. The resulting electrodes exhibited very high reversible specific capacity almost 1.4~2.4 times the theoretical capacity of commercial graphite, and excellent capacity retention (~90%@50^th cycle) as compared with those of the existing transition metal oxides. From the analysis of the cumulative irreversible capacity and morphology change during charge/discharge cycling, it proved that the excellent capacity retention was attributed to the unique structural feature of our core-shell structure where only the thin CoO shell participates in the lithium storage. In addition, our electrodes showed a superb rate performance (70.5%@10.8 C-rate), most likely due to the open porous structure of 3D films, large surface area thanks to the dendritic structure, and fast electron transport through Cu core network.

• Applied Chemistry for Engineering
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• v.20 no.5
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• pp.465-472
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• 2009

The technologies for improving the capacity of hydrogen storage were investigated and the recent data of hydrogen storage by using various porous carbon materials were summarized. As the media of hydrogen storage, activated carbon, carbon nanotube, expanded graphite and activated carbon fiber were mainly investigated. The hydrogen storage in the carbon materials increased with controlled pore size about 0.6~0.7 nm. In case of catalyst, transition metal and their metal oxide were mainly applied on the surface of carbon materials by doping. Activated carbon is relatively cheap because of its production on a large scale. Carbon nanotube has a space inside and outside of tube for hydrogen storage. In case of graphite, the distance between layers can be extended by intercalation of alkali metals providing the space for hydrogen adsorption. Activated carbon fiber has the high specific surface area and micro pore volume which are useful for hydrogen storage. Above consideration of research, porous carbon materials still can be one of the promising materials for reaching the DOE target of hydrogen storage.

• Proceedings of the Korean Vacuum Society Conference
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• 2010.02a
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• pp.380-380
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• 2010

Currently, organic light-emitting diodes (OLEDs) have been proven of their readiness for commercialization in terms of lifetime and efficiency. In accordance with emerging new technologies, enhancement of light efficiency and extension of application fields are required. Particularly inverted structures, in which electron injection occurs at bottom and hole injection on top, show crucial advantages due to their easy integration with Si-based driving circuits for active matrix OLED as well as large open area for brighter illumination. In order to get better performance and process reliability, usually a proper buffer layer for carrier injection is needed. In inverted top emission OLED, the buffer layer should protect underlying organic materials against destructive particles during the electrode deposition, in addition to increasing their efficiency by reducing carrier injection barrier. For hole injection layers, there are several requirements for the buffer layer, such as high transparency, high work function, and reasonable electrical conductivity. As a buffer material, a few kinds of transition metal oxides for inverted OLED applications have been successfully utilized aiming at efficient hole injection properties. Among them, we chose 2 nm of $WO_3$ between NPB [N,N'-bis(1-naphthyl)-N,N'-diphenyl-1,1'-biphenyl-4,4'-diamine] and Au (or Al) films. The interfacial energy-level alignment and chemical reaction as a function of film coverage have been measured by using in-situ ultraviolet and X-ray photoelectron spectroscopy. It turned out that the $WO_3$ interlayer substantially reduces the hole injection barrier irrespective of the kind of electrode metals. It also avoids direct chemical interaction between NPB and metal atoms. This observation clearly validates the use of $WO_3$ interlayer as hole injection for inverted OLED applications.

• Journal of the Korean Ceramic Society
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• v.42 no.4
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• pp.292-297
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• 2005

$LiMO_{2}(M=Co,Ni)$ samples were synthesized with $Li_{2}CO_{3},\;Co_{3}O_{4}$, and NiO by the solid-state reaction method. In the case of $LiCoO_{2}$, at low temperature$(T=400^{\circ}C)$ spinel structure was synthesized and the obtained spinel phase was transformed to layered phase at high temperature$(T\ge600^{\circ}C)$. The phase transition behaviors of $LiCoO_{2}$ were investigated with various heating temperature and time. The rate of transition was directly proportional to the concentrations of reactant, and activation energy of reaction was around 6.76 kcal/mol. When CoO(rock salt structure) was used as a starting material instead of $Co_{3}O_{4}$(spinel structure), layered structure of $LiCoO_{2}$ was obtained at low temperature. In the case of $LiNiO_{2}$ the transition from layered structure to rock salt structure occurred easily by disordering/ordering reaction, but did not occur in $LiCoO_{2}$. The difference in metal ion radii in $LiCoO_{2}$ and $LiNiO_{2}$ results in different behaviors of phase transitions.

• Applied Chemistry for Engineering
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• v.26 no.4
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• pp.394-399
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• 2015

In this study, the Cu catalyst decorated with activated carbon fibers were prepared for improving $SO_2$ adsorption properties. Flame retardant and heat treatments of Lyocell fibers were carried out to obtain carbon fibers with high yield. The prepared carbon fibers were activated by KOH solution for the high specific surface area and controlled pore size to improve $SO_2$ adsorption properties. Copper nitrate was also used to introduce the Cu catalyst on the activated carbon fibers (ACFs), which can induce various reactions in the process; i) copper nitrate promotes the decomposition reaction of oxygen group on the carbon fiber and ii) oxygen radical is generated by the decomposition of copper oxide and nitrates to promote the activation reaction of carbon fibers. As a result, the micro and meso pores were formed and Cu catalysts evenly distributed on ACFs. By Cu-impregnation process, both the specific surface area and micropore volume of carbon fibers increased over 10% compared to those of ACFs only. Also, this resulted in an increase in $SO_2$ adsorption capacity over 149% than that of using the raw ACF. The improvement in $SO_2$ adsorption properties may be originated from the synergy effect of two properties; (i) the physical adsorption from micro, meso and specific surface area due to the transition metal catalyst effect appeared during Cu-impregnation process and ii) the chemical adsorption of $SO_2$ gas promoted by the Cu catalyst on ACFs.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2009.11a
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• pp.5-5
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• 2009

Thin-film-transistors (TFTs) that can be prepared at low temperatures have attracted much attention because of the great potential for transparent and flexible electronics. One of the mainstreams in this field is the use of organic semiconductors such as pentacene. But device performance of the organic TFTs is still limited due to low field-effect mobility and rapid degradation after exposing to air. Alternative approach is the use of amorphous oxide semiconductors as a channel. Amorphous oxide semiconductors (AOSs) based TFTs showed the fast technological development, because AOS films can be fabricated at room temperature and exhibit the possibility in application like flexible display, electronic paper, and larges solar cells. Among the various AOSs, a-IGZO has lots of advantages because it has high channel mobility, uniform surface roughness and good transparency. [1] The high mobility is attributed to the overlap of spherical s-orbital of the heavy post-transition metal cations. This study demonstrated the effect of the variation in channel thickness from 30nm to 200nm on the TFT device performance. When the thickness was increased, turn-on voltage and subthreshold swing was decreased. The a-IGZO channels and source/drain metals were deposited with shadow mask. The a-IGZO channel layer was deposited on $SiO_2$/p-Si substrates by RF magnetron sputtering, where RF power is 150W. And working pressure is 3m Torr, at $O_2/Ar$ (2/28 sccm) atmosphere. The electrodes were formed with electron-beam evaporated Ti (30 nm) and Au (70 nm) bilayer. Finally, Al (150nm) as a gate metal was thermal-evaporated. TFT devices were heat-treated in a furnace at 250 $^{\circ}C$ and nitrogen atmosphere for 1hour. The electrical properties of the TFTs were measured using a probe-station. The TFT with channel thickness of 150nm exhibits a good subthreshold swing (SS) of 0.72 V/decade and on-off ratio of $1{\times}10^8$. The field effect mobility and threshold voltage were evaluated as 7.2 and 8 V, respectively.

• Journal of Nuclear Fuel Cycle and Waste Technology(JNFCWT)
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• v.16 no.4
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• pp.421-429
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• 2018

Hydrazine based reductive dissolution applied on magnetite oxide was investigated. Dissolution of Fe(II) and Fe(III) from magnetite takes place either by protonation, surface complexation, or reduction. Solution containing hydrazine and sulfuric acid provides hydrogen to break bonds between Fe and oxygen by protonation and electrons for the reduction of insoluble Fe(III) to soluble Fe(II) in acidic solution of pH 3. In terms of dissolution rate, numerous transition metal ions were examined and Cu(II) ion was found to be the most effective to speed up the dissolution. During the cycle of Cu(I) ions to Cu(II) ions, the released electron promoted the reduction of Fe(III) and Cu(II) ions returned to Cu(I) ion due to the oxidation of hydrazine. In the experimental results, the addition of a very low amount of cupric ion (about 0.5 mM) to the solution increased the dissolution rate about 40% on average and up to 70% for certain specific conditions. It is confirmed that even though the coordination structure of copper ions with hydrazine is not clear, the $Cu(II)/H^+/N_2H_4$ system is acceptable regarding the dissolution performance as a decontamination reagent.

• Proceedings of the Korean Vacuum Society Conference
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• 2013.02a
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• pp.470-470
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• 2013

Recently, active materials such as amorphous silicon (a-Si), poly crystalline silicon (poly-Si), transition metal oxide semiconductors (TMO), and organic semiconductors have been demonstrated for flexible electronics. In order to apply flexible devices on the polymer substrates, all layers should require the characteristic of flexibility as well as the low temperature process. Especially, pentacene thin film transistors (TFTs) have been investigated for probable use in low-cost, large-area, flexible electronic applications such as radio frequency identification (RFID) tags, smart cards, display backplane driver circuits, and sensors. Since pentacene TFTs were studied, their electrical characteristics with varying single variable such as strain, humidity, and temperature have been reported by various groups, which must preferentially be performed in the flexible electronics. For example, the channel mobility of pentacene organic TFTs mainly led to change in device performance under mechanical deformation. While some electrical characteristics like carrier mobility and concentration of organic TFTs were significantly changed at the different temperature. However, there is no study concerning multivariable. Devices actually worked in many different kinds of the environment such as thermal, light, mechanical bending, humidity and various gases. For commercialization, not fewer than two variables of mechanism analysis have to be investigated. Analyzing the phenomenon of shifted characteristics under the change of multivariable may be able to be the importance with developing improved dielectric and encapsulation layer materials. In this study, we have fabricated flexible pentacene TFTs on polymer substrates and observed electrical characteristics of pentacene TFTs exposed to tensile and compressive strains at the different values of temperature like room temperature (RT), 40, 50, $60^{\circ}C$. Effects of bending and heating on the device performance of pentacene TFT will be discussed in detail.

• Journal of the Korean Magnetics Society
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• v.15 no.3
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• pp.181-185
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• 2005

We have investigated the effects of Al codoping on the structural, electrical transport, and magnetic properties of oxide diluted magnetic semiconductor $Zn_{1-x}Cr_xO$ thin films prepared by reactive sputtering. Nondoped $Zn_{0.99}Cr_{0.01}O$ thin films show semiconducting transport behavior and weak ferromagnetic characteristic. The Al doping increases the carrier concentration and results in an decrease of resistivity and metal-insulator transition behavior. With increasing carrier concentration, the magnetic properties drastically change, exhibiting a remarkable increase of the saturation magnetization. These results show carrier-enhanced ferromagnetic order in Cr-doped ZnO.