• 대한전기학회논문지
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• 제41권5호
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• pp.525-532
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• 1992

Fluorine-doped YBaS12TCuS13TOS17-xTFS1yT superconducting materials with y varing two orders of magnitude form 0.02 to 2.0 have been prepared by a sol-gel process by using metal nitrate salts, sodium hydroxide and sodium fluoride. Fluorine contents have been measured using an ion-selective electrode. All fluorine doped as reactant were found to be present in the resulted samples. From the observation of XRD it has been concluded that the samples with y 0.2 formed simply the single phase of perovskite structure, whereas those with y 0.5 yielded together some compounds such as BaFS12T, YFS13T and CuO in the resulted samples. The observation of solid state S019TF NMR has been carried out in order to check whether fluorine was actually incorporated into the lattice sites, and the experimental results revealed that the mole ratio of fluorine incorporated into the lattice sites of YBaS12TCuS13TOS17-xT was approximately 0.2 per mole of the compound. Also electrical resistivity measurement indicated that onset transition temperature has the tendency to increase slightly with increasing y in the dilute region as y 0.2.

• 한국재료학회지
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• 제31권12호
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• pp.710-718
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• 2021

Recently, due to high theoretical capacitance and excellent ion diffusion rate caused by the 2D layered crystal structure, transition metal hydroxides (TMHs) have generated considerable attention as active materials in supercapacitors (or electrochemical capacitors). However, TMHs should be designed using morphological or structural modification if they are to be used as active materials in supercapacitors, because they have insulation properties that induce low charge transfer rate. This study aims to modify the morphological structure for high cycling stability and fast charge storage kinetics of TMHs through the use of nickel cobalt hydroxide [NiCo(OH)₂] decorated on nickel foam. Among the samples used, needle-like NiCo(OH)₂ decorated on nickel foam offers a high specific capacitance (1110.9 F/g at current density of 0.5 A/g) with good rate capability (1110.9 - 746.7 F/g at current densities of 0.5 - 10.0 A/g). Moreover, at a high current density (10.0 A/g), a remarkable capacitance (713.8 F/g) and capacitance retention of 95.6% after 5000 cycles are noted. These results are attributed to high charge storage sites of needle-like NiCo(OH)₂ and uniformly grown NiCo(OH)₂ on nickel foam surface.

• 한국재료학회지
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• 제32권4호
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• pp.216-222
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• 2022

The capacity of high nickel Li(Ni_xCo_yMn_1-x-y)O₂ (NCM, x ≥ 0.8) cathodes is known to rapidly decline, a serious problem that needs to be solved in a timely manner. It was reported that cathode materials with the {010} plane exposed toward the outside, i.e., a radial structure, can provide facile Li⁺ diffusion paths and stress buffer during repeated cycles. In addition, cathodes with a core-shell composition gradient are of great interest. For example, a stable surface structure can be achieved using relatively low nickel content on the surface. In this study, precursors of the high-nickel NCM were synthesized by coprecipitation in ambient atmosphere. Then, a transition metal solution for coprecipitation was replaced with a low nickel content and the coprecipitation reaction proceeded for the desired time. The electrochemical analysis of the core-shell cathode showed a capacity retention of 94 % after 100 cycles, compared to the initial discharge capacity of 184.74 mA h/g. The rate capability test also confirmed that the core-shell cathode had enhanced kinetics during charging and discharging at 1 A/g.

• 전기화학회지
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• 제20권4호
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• pp.67-74
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• 2017

층상구조의 Ni-rich NCM계 양극활물질 $Li[Ni_xCo_{(1-x)/2}Mn_{(1-x)/2}]O_2$ ($x{\geq}0.6$)은 $LiCoO_2$ 대비 높은 에너지밀도와 가격 경쟁력의 장점을 가진다. Ni 함량에 비례하여 가역 방전용량이 증가하는 장점이 있는 반면, 합성 중에 발생하는 양이온 혼합으로 인해 안정적인 전기화학성능을 구현하기 어려운 문제가 있다. 본 연구에서는 합성 분위기, 리튬 원료물질, 합성 시간, 합성 온도, Li/M (M=transition metal) 비율 등의 다양한 합성조건을 변수로 하여 Ni 함량 증가에 따라 최적의 층상구조 Ni-rich NCM을 각각 합성하고 이에 대한 전기화학성능을 보고하였다. $Li[Ni_{0.6}Co_{0.2}Mn_{0.2}]O_2$ (NCM6)을 기준으로 Ni 함량이 증가한 $Li[Ni_{0.7}Co_{0.15}Mn_{0.15}]O_2$ (NCM7)와 $Li[Ni_{0.8}Co_{0.1}Mn_{0.1}]O_2$ (NCM8)의 합성시 전이금속 중 Ni의 비율이 증가함에 따라 양이온 혼합이 증가하는 것이 관찰되었고, 이는 전기화학 성능에 부정적인 영향을 끼치는 것으로 확인되었다. Ni 비율별 NCM에 대한 연구결과 비율 내확인한 최적의 조건에서 NCM6은 $180mAh{\cdot}g^{-1}$, 96.2% (50회), NCM7은 $187mAh{\cdot}g^{-1}$, 94.7% (50회), NCM8은 $201mAh{\cdot}g^{-1}$, 92.7% (50회)의 초기 방전용량 및 수명평가 후 용량유지율 값을 각각 구현하였다.

• 한국식품영양과학회지
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• 제33권1호
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• pp.123-131
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• 2004

단백질의 Maillard 반응의 최종산물의 하나인 $N^{\varepsilon}$-car-boxy methyl lysine(CML)의 형성에 미치는 reactive oxygen species(ROS)의 영향을 살펴보았다. Glucose와 fructose는 자동산화과정을 통하여 CML 형성의 주된 propagator인 $\alpha$-dicarbonyl 화합물은 물론 glyoxal을 생성시키는 것이 확인되었다. 또한 이 과정은 ROS를 형성하는 천이금속이온에 의해 촉진되는 산화과정임을 알 수 있었다. 반응성이 높은 fructose에 비해 glucose의 경우가 ROS의 영향이 더욱 현저하게 나타났다. 불포화 지방산도 glyoxal을 형성하고 있었으며, 불포화도가 클수록 glyoxal 생성량이 빠르게 나타났으나 ROS의 영향은 비교적 작게 나타났다. Ascorbic acid 역시 ROS와는 무관하게 glyoxal을 생성하였다. 이는 ROS의 영향이전에 이들 물질들의 반응성이 매우 높다는 것을 의미하고 있다. Hippury lysine을 이용한 model system에서도 glucose로부터의 $N^{\varepsilon}$-carboxymethyl hipuryllysine(CMHL) 형성에서는 ROS의 영향이 높게 나타났으나, 반응성이 매우 높은 glyoxal에 의한 CMHL 생성에는 ROS의 영향이 거의 나타나지 않았다. CML에 특이적으로 결합하는 monoclonal antibody(6D12)를 이용한 antigen coated noncompetitive indirect ELISA 분석을 통해서 CML생성에 미치는 ROS의 영향을 살펴본 결과 대체로 위의 결과와 비슷한 경향을 나타내었다. 따라서 반응성이 높은 물질일수록 CML 형성에 ROS의 영향이 작게 나타남을 알 수 있었다.

• 한국진공학회:학술대회논문집
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• 한국진공학회 2012년도 제42회 동계 정기 학술대회 초록집
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• pp.100-101
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• 2012

The plasma damage free and room temperature processedthin film deposition technology is essential for realization of various next generation organic microelectronic devices such as flexible AMOLED display, flexible OLED lighting, and organic photovoltaic cells because characteristics of fragile organic materials in the plasma process and low glass transition temperatures (Tg) of polymer substrate. In case of directly deposition of metal oxide thin films (including transparent conductive oxide (TCO) and amorphous oxide semiconductor (AOS)) on the organic layers, plasma damages against to the organic materials is fatal. This damage is believed to be originated mainly from high energy energetic particles during the sputtering process such as negative oxygen ions, reflected neutrals by reflection of plasma background gas at the target surface, sputtered atoms, bulk plasma ions, and secondary electrons. To solve this problem, we developed the NBAS (Neutral Beam Assisted Sputtering) process as a plasma damage free and room temperature processed sputtering technology. As a result, electro-optical properties of NBAS processed ITO thin film showed resistivity of $4.0{\times}10^{-4}{\Omega}{\cdot}m$ and high transmittance (>90% at 550 nm) with nano- crystalline structure at room temperature process. Furthermore, in the experiment result of directly deposition of TCO top anode on the inverted structure OLED cell, it is verified that NBAS TCO deposition process does not damages to the underlying organic layers. In case of deposition of transparent conductive oxide (TCO) thin film on the plastic polymer substrate, the room temperature processed sputtering coating of high quality TCO thin film is required. During the sputtering process with higher density plasma, the energetic particles contribute self supplying of activation & crystallization energy without any additional heating and post-annealing and forminga high quality TCO thin film. However, negative oxygen ions which generated from sputteringtarget surface by electron attachment are accelerated to high energy by induced cathode self-bias. Thus the high energy negative oxygen ions can lead to critical physical bombardment damages to forming oxide thin film and this effect does not recover in room temperature process without post thermal annealing. To salve the inherent limitation of plasma sputtering, we have been developed the Magnetic Field Shielded Sputtering (MFSS) process as the high quality oxide thin film deposition process at room temperature. The MFSS process is effectively eliminate or suppress the negative oxygen ions bombardment damage by the plasma limiter which composed permanent magnet array. As a result, electro-optical properties of MFSS processed ITO thin film (resistivity $3.9{\times}10^{-4}{\Omega}{\cdot}cm$, transmittance 95% at 550 nm) have approachedthose of a high temperature DC magnetron sputtering (DMS) ITO thin film were. Also, AOS (a-IGZO) TFTs fabricated by MFSS process without higher temperature post annealing showed very comparable electrical performance with those by DMS process with $400^{\circ}C$ post annealing. They are important to note that the bombardment of a negative oxygen ion which is accelerated by dc self-bias during rf sputtering could degrade the electrical performance of ITO electrodes and a-IGZO TFTs. Finally, we found that reduction of damage from the high energy negative oxygen ions bombardment drives improvement of crystalline structure in the ITO thin film and suppression of the sub-gab states in a-IGZO semiconductor thin film. For realization of organic flexible electronic devices based on plastic substrates, gas barrier coatings are required to prevent the permeation of water and oxygen because organic materials are highly susceptible to water and oxygen. In particular, high efficiency flexible AMOLEDs needs an extremely low water vapor transition rate (WVTR) of $1{\times}10^{-6}gm^{-2}day^{-1}$. The key factor in high quality inorganic gas barrier formation for achieving the very low WVTR required (under ${\sim}10^{-6}gm^{-2}day^{-1}$) is the suppression of nano-sized defect sites and gas diffusion pathways among the grain boundaries. For formation of high quality single inorganic gas barrier layer, we developed high density nano-structured Al2O3 single gas barrier layer usinga NBAS process. The NBAS process can continuously change crystalline structures from an amorphous phase to a nano- crystalline phase with various grain sizes in a single inorganic thin film. As a result, the water vapor transmission rates (WVTR) of the NBAS processed $Al_2O_3$ gas barrier film have improved order of magnitude compared with that of conventional $Al_2O_3$ layers made by the RF magnetron sputteringprocess under the same sputtering conditions; the WVTR of the NBAS processed $Al_2O_3$ gas barrier film was about $5{\times}10^{-6}g/m^2/day$ by just single layer.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 1993년도 춘계학술대회 논문집
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• pp.79-84
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• 1993

This paper describes the development of lithium rechargeable cell. $LiCoO_2$ is recently recognized as a suitable cathode active material of a high voltage, high energy lithium rechargeable batteries because $Li^+$ ion can be electrochemically deintercalated/intercalated from/to $Li_xCoO_2$. The transition metal oxide of $LiCoO_2$ was investigated for using as a cathode active material of 4V class Li rechargeable cell. $LiCoO_2$ cathode was prepared by using a active material of 85 wt%, graphite powder of 12 wt% as a conductor and poly-vinylidene fluoride of 3 wt% as a binder. The electrochemical and charge/discharge properties of $LiCoO_2$ were investigated by cyclic voltammetry and galvanostatic charge/discharge. The open circuit voltage of prepared $LiCoO_2$ electrode exhibited approximately. potential range between 3.32V and 3.42V. During the galvanostatic charge/discharge, $LiCoO_2/Li$ cell showed stable cycling behavior at scan rate of 1mV/sec and potential range between 3.6V and 4.2V. Also its coulombic efficiency as function of cycling was 81%~102%. In this study the $LiCoO_2/Li$ cell showed the available discharge capacity of 90.1 mAh/g at current density of $1mA/cm^2$ and cell discharge voltage range between 3.6V~4.2V.

• 대한임상검사과학회지
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• 제50권2호
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• pp.205-210
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• 2018

단삼의 성분인 salvianolic acid B는 다양한 생리활성이 알려져 있다. 특히 항산화 효과는 간세포, 신경세포를 포함한 다양한 세포유형에서 보호효과가 있다고 보고되었다. 하지만 ferulic acid와 같이 항산화제로 여겨지는 몇몇 페놀성 물질은 특정 전이 금속이 있으면 산화작용을 하며 이것이 항암 효능을 설명하기도 한다. 본 실험에서 salvianolic acid B가 $Cu^{2+}$ 환경에서 산화작용을 하는지 알아보았다. salvianolic acid B와 $Cu^{2+}$를 동시 처리하면 supercoilded 형태의 DNA가 open circular 혹은 linear 형태로 바뀌었으나 salvianolic acid B 혹은 $Cu^{2+}$를 단독 처리 했을 때는 그렇지 않았다. $Cu^+$에만 특정적인 킬레이터 neocuproine을 이용하여 salvianolic acid B가 $Cu^{2+}$를 $Cu^+$로 환원시킴을 알았으며 $H_2O_2$를 물과 산소로 분해하는 catalase를 처리하면 DNA 분해가 일어나지 않았다. 활성산소종 중 하나인 $H_2O_2$는 생체분자 특히 DNA를 공격하여 정상기능을 수행하지 못하게 한다. 정리하면 salvianolic acid B에 의한 $Cu^{2+}$의 환원은 $H_2O_2$를 생성하며 $H_2O_2$는 DNA 분해를 일으킨다. 이런 결과는 salvianolic aicd B의 항암효과가 salvianolic acid의 $H_2O_2$ 생성 때문일 수 있다는 작은 단서를 줄 수 있으며 이는 좀 더 실험이 이뤄져야 한다.

• 대한화학회지
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• 제55권2호
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• pp.177-182
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• 2011

이케토형 리간드는 thiophene-2-aldehyde와 acetylacetone의 Knoevenagel 축합반응을 통해 합성하였으며, 이를 이용하여 Cu(II), Ni(II) 및Co(II) 염화물의 착물을 합성하였다. 모든 착물의 특성은 다양한 물리-화학적 방법으로 규명하였다. 몰전기전도도 결과로부터 이들 착물이 이온성을 가짐을 알았다. 전자 및 EPR 스펙트럼을 통해 구리(II) 이온이 사각평면 기하구조를 가짐을 알았다. 구리(II) 착물과 CTDNA(송아지 thymus DNA)의 상호작용을 흡수 스펙트럼과 순환 전압전류법으로 연구하였다. $k_{obs}$ 대 [DNA]의 도시는 선형을 보였는데, 이는 유사-1차반응을 의미한다. 순환 전압전류 그림으로부터 구리(II) 착물이 각각 -0.240 V와 -0.194 V의 $E_{1/2}$ 값을 갖는 일전자 Cu(II)/Cu(I) 산화-환원 쌍에 대해 준가역적임을 알았다. CTDNA를 첨가한 경우, $E_{1/2}$값이 각각168 mV와 18 mV 이동하였고 Ep 값도 감소하였다. CTDNA의 존재 하에 $E_{1/2}$이 이처럼 이동하는 것은 구리(II) 착물이 CTDNA에 강하게 결합됨을 의미한다.

• 대한화학회지
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• 제19권2호
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• pp.92-97
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• 1975

$TiCl(OC_6H_5)_3{\cdot}C_6H_5OH\;및\;Ti(OC_6H_5)_4{\cdot}C_6H_5OH$의 분자량 측정과 전자 흡수스펙트럼을 고찰함으로써 이들 두 유기-리탄 화합물들의 용액 상태에서의 분자 및 전자구조에 대하여 연구하였다. $Ti(OC_6H_5)_4{\cdot}C_6H_5OH$는 고체상태에서는 이합체로 존재하지만 분자량 측정 결과 묽은 용액에서는 단위체로 완전해리되며 $TiCl(OC_6H_5)_3{\cdot}C_6H_5OH$도 8mM농도에서 해리를 시작함을 알수 있었다. 따라서 이들 두 착화합물은 묽은 용액에서 5배위 착화합물로 존재하며 분자구조는 trigonalbipyramid으로 생각된다. 두 화합물의 전자 흡수스펙트럼은 자외부쪽에 똑같은 진동구조를 갖는 벤젠고리 특유의 흡수밴드를 나타내며 가시부에서는 $TiCl(OC_6H_5)_3{\cdot}C_6H_5OH$의 경우 26.8kK에 $Ti(OC_6H_5)_4{\cdot}C_6H_5OH$는 29.6kK에 각각 흡수 밴드를 나타낸다. 이가시부 흡수밴드는 리간드에서 금속쪽으로 전하이전에 의한 $^1A_1''{\to}^1E'\;or\;^1E''$ 전이로 생각된다.