• 한국방사선학회논문지
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• 제13권3호
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• pp.445-451
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• 2019

형광체 내 모체로 사용될 때 활성 이온 주위에 분포하여 형광 특성에 많은 영향을 미치는 알칼리 토금속인 $Ba^{2+}$ 이온을 기반으로 하는 바나데이트 화합물인 $Ba_2GdV_3O_{11}$에 희토류 이온 $Eu^{3+}$를 첨가하여 형광 강도 및 형광 수명을 연구하였다. 고상법을 이용하여 $Ba_2GdV_3O_{11}:Eu^{3+}$ 형광체를 합성하였으며 X선 회절 분석을 통하여 형광체의 결정성을 확인하였다. $Ba_2GdV_3O_{11}:Eu^{3+}$ 형광체의 형광특성은 광학 및 레이저를 이용하여 측정하였다. $Ba_2GdV_3O_{11}:Eu^{3+}$ 형광체의 에너지 전이와 확산은 $Eu^{3+}$의 농도에 크게 의존한다. $Eu^{3+}$의 농도가 낮을 때 CT 밴드로의 강한 형광을 보이나 $Eu^{3+}$의 농도가 높아질수록 4f - 4f 전이에 의한 형광이 강하게 나타난다. $Eu^{3+}$ 이온의 농도 증가로 인해 이온 간의 에너지가 확산되어 형광의 수명시간은 감소하였다. 에너지 전이는 낮은 $Eu^{3+}$ 농도에서 두 $Eu^{3+}$ 이온 사이에서 발생하며 에너지 확산은 높은 $Eu^{3+}$ 농도에서 크게 발생한다.

• 한국진공학회:학술대회논문집
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• 한국진공학회 2016년도 제50회 동계 정기학술대회 초록집
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• pp.292-292
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• 2016

Transition metal dichalcogenides (TMDs) with a two-dimensional layered structure have been considered highly promising materials for next-generation flexible, wearable, stretchable and transparent devices due to their unique physical, electrical and optical properties. Recent studies on TMD devices have focused on developing a suitable doping technique because precise control of the threshold voltage ($V_{TH}$) and the number of tightly-bound trions are required to achieve high performance electronic and optoelectronic devices, respectively. In particular, it is critical to develop an ultra-low level doping technique for the proper design and optimization of TMD-based devices because high level doping (about $10^{12}cm^{-2}$) causes TMD to act as a near-metallic layer. However, it is difficult to apply an ion implantation technique to TMD materials due to crystal damage that occurs during the implantation process. Although safe doping techniques have recently been developed, most of the previous TMD doping techniques presented very high doping levels of ${\sim}10^{12}cm^{-2}$. Recently, low-level n- and p-doping of TMD materials was achieved using cesium carbonate ($Cs_2CO_3$), octadecyltrichlorosilane (OTS), and M-DNA, but further studies are needed to reduce the doping level down to an intrinsic level. Here, we propose a novel DNA-based doping method on $MoS_2$ and $WSe_2$ films, which enables ultra-low n- and p-doping control and allows for proper adjustments in device performance. This is achieved by selecting and/or combining different types of divalent metal and trivalent lanthanide (Ln) ions on DNA nanostructures. The available n-doping range (${\Delta}n$) on the $MoS_2$ by Ln-DNA (DNA functionalized by trivalent Ln ions) is between $6{\times}10^9cm^{-2}$ and $2.6{\times}10^{10}cm^{-2}$, which is even lower than that provided by pristine DNA (${\sim}6.4{\times}10^{10}cm^{-2}$). The p-doping change (${\Delta}p$) on $WSe_2$ by Ln-DNA is adjusted between $-1.0{\times}10^{10}cm^{-2}$ and $-2.4{\times}10^{10}cm^{-2}$. In the case of Co-DNA (DNA functionalized by both divalent metal and trivalent Ln ions) doping where $Eu^{3+}$ or $Gd^{3+}$ ions were incorporated, a light p-doping phenomenon is observed on $MoS_2$ and $WSe_2$ (respectively, negative ${\Delta}n$ below $-9{\times}10^9cm^{-2}$ and positive ${\Delta}p$ above $1.4{\times}10^{10}cm^{-2}$) because the added $Cu^{2+}$ ions probably reduce the strength of negative charges in Ln-DNA. However, a light n-doping phenomenon (positive ${\Delta}n$ above $10^{10}cm^{-2}$ and negative ${\Delta}p$ below $-1.1{\times}10^{10}cm^{-2}$) occurs in the TMD devices doped by Co-DNA with $Tb^{3+}$ or $Er^{3+}$ ions. A significant (factor of ~5) increase in field-effect mobility is also observed on the $MoS_2$ and $WSe_2$ devices, which are, respectively, doped by $Tb^{3+}$-based Co-DNA (n-doping) and $Gd^{3+}$-based Co-DNA (p-doping), due to the reduction of effective electron and hole barrier heights after the doping. In terms of optoelectronic device performance (photoresponsivity and detectivity), the $Tb^{3+}$ or $Er^{3+}$-Co-DNA (n-doping) and the $Eu^{3+}$ or $Gd^{3+}$-Co-DNA (p-doping) improve the $MoS_2$ and $WSe_2$ photodetectors, respectively.

• 한국진공학회:학술대회논문집
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• 한국진공학회 2015년도 제49회 하계 정기학술대회 초록집
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• pp.157-157
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• 2015

Recently, the growing interest in organic microelectronic devices including OLEDs has led to an increasing amount of research into their many potential applications in the area of flexible electronic devices based on plastic substrates. However, these organic devices require a gas barrier coating to prevent the permeation of water and oxygen because organic materials are highly susceptible to water and oxygen. In particular, high efficiency OLEDs require an extremely low water vapor transition rate (WVTR) of $1{\times}10^{-6}g/m^2day$. The Key factor in high quality inorganic gas barrier formation for achieving the very low WVTR required ($1{\times}10^{-6}g/m^2day$) is the suppression of defect sites and gas diffusion pathways between grain boundaries. In this study NBAS process was introduced to deposit enhanced film density single gas barrier layer with a low WVTR. Fig. 1. shows a schematic illustration of the NBAS apparatus. The NBAS process was used for the $Al_2O_3$ nano-crystal structure films deposition, as shown in Fig. 1. The NBAS system is based on the conventional RF magnetron sputtering and it has the electron cyclotron resonance (ECR) plasma source and metal reflector. $Ar^+$ ion in the ECR plasma can be accelerated into the plasma sheath between the plasma and metal reflector, which are then neutralized mainly by Auger neutralization. The neutral beam energy is controlled by the metal reflector bias. The controllable neutral beam energy can continuously change crystalline structures from an amorphous phase to nanocrystal phase of various grain sizes. The $Al_2O_3$ films can be high film density by controllable Auger neutral beam energy. we developed $Al_2O_3$ high dense barrier layer using NBAS process. We can verified that NBAS process effect can lead to formation of high density nano-crystal structure barrier layer. As a result, Fig. 2. shows that the NBAS processed $Al_2O_3$ high dense barrier layer shows excellent WVTR property as a under $2{\times}10^{-5}g/m^2day$ in the single barrier layer of 100nm thickness. Therefore, the NBAS processed $Al_2O_3$ high dense barrier layer is very suitable in the high efficiency OLED application.

• 대한화학회지
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• 제29권5호
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• pp.516-521
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• 1985

한자리 리간드로써 암민, 에틸렌디아민, 트리메틸렌디아민 등을 포함하는 ethylenediamine-triacetatocobalt (III) 착물을 합성하고, Dowex 50W-X8, 수소이온형 양이온 교환수지를 사용하여 각각 한 종류의 이성질체를 분리하였으며, 원소분석, pH적정, 적외선 분광법, 핵자기공명 및 전자흡수스펙트럼으로 가능한 기하이성질체중에서 cis-equatorial형이라고 추정하였다. 여러자리 리간드를 동시에 포함하는 meridional 형의 $[CoN_3O_3]$계에서 나타난 제 1흡수띠는 크게 분열된 양상을 보여주었고, 에틸렌디아민, 트리메틸렌디아민 등이 코발트(III) 이온에 한자리 리간드로 배위되었다는 사실도 확인하게 되었다.

• 한국재료학회:학술대회논문집
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• 한국재료학회 2011년도 추계학술발표대회
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• pp.33.1-33.1
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• 2011

Strontium doped lanthanum manganite (LSM) with perovskite structure for SOFC cathode material shows high electrical conductivity and good chemical stability, whereas the electrical conductivity at intermediate temperature below $800^{\circ}C$ is not sufficient due to low oxygen ion conductivity. The approach to improve electrical conductivity is to make more oxygen vacancies by substituting alkaline earths (such as Ca, Sr and Ba) for La and/or a transition metal (such as Fe, Co and Cu) for Mn. Among various cathode materials, $LaSrMnCuO_3$ has recently been suggested as the potential cathode materials for solid oxide fuel cells (SOFCs). As for the Cu doping at the B-site, it has been reported that the valence change of Mn ions is occurred by substituting Cu ions and it leads to formation of oxygen vacancies. The electrical conductivity is also affected by doping element at the A-site and the co-doping effect between A-site and B-site should be described. In this study, the $La_{1-x}Sr_xMn_{0.8}Cu_{0.2}O_{3{\pm}{\delta}}$ ($0{\leq}x{\leq}0.4$) systems were synthesized by a combined EDTA-citrate complexing process. The crystal structure, morphology, thermal expansion and electrical conductivity with different Sr contents were studied and their co-doping effects were also investigated.

• 한국안광학회지
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• 제1권1호
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• pp.1-14
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• 1996

Magic-Angle-Spinning NMR에 나타나는 $Li^+$ 이온의 운동과 관련된 알칼리 혼합 효과에 미치는 전이금속 산화물의 영향을 조사하기 위하여 불순물 $Fe_2O_3$를 0.1 mol% 첨가시킨 혼합 알칼리 Silicate 유리들을 제조하였고, 온도에 따라 $^7Li$ MAS-NMR 스펙트럼과 상온에서 $^7Li$ 스핀-살창 완화시간을 측정하였다. $Fe_2O_3$가 첨가되었을 때, 스펙트럼의 선폭이 조금 변화되었을 뿐이며 선 모양이 거의 변하지 않고 있다. 이 때문에, 스핀-스핀 완화 과정에서는 혼합 알칼리 효과가 충분히 나타나는 것으로 불수도 있지만 반드시 그렇지만은 않아 보인다. $Li^+$ 이온의 활성화 에너지가 혼합 알칼리 유리에서 오히려 감소하는 경향이 나타났다. 이것은 혼합 알칼리 효과가 아니다. 스핀-살창 완화시간, 완화 과정 분석을 통한 $Li^+$ 이온의 확산 환경, 그리고 핵 자가화 (nuclear magnetization) 등의 비교에 의하면, $^7Li$ 스핀-살창 완화 과정에서 알칼리 혼합 효과는 거의 나타나지 않는 것을 확인 할 수 있었다.

• 전기화학회지
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• 제5권2호
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• pp.79-85
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• 2002

열역학적 관점에서 몬테 카를로 방법의 전기화학적 리튬 인터칼레이션에로의 응용에 대하여 다루었다. 우선 통계 열역학의 앙상블, Ising 및 lattice gas 모델의 기본 개념을 간단히 소개하였고, lattice gas 모델에 근거한 몬테카를로 방법을 사용하여 전이금속 산화물내로의 리튬 인터칼레이션의 열역학을 해석하였다. 특히 $LiMn_2O_4$전극에 대해 전극 포텐셜 곡선과 리튬 이온의 부분 몰 내부에너지와 엔트로피와 같은 열역학적 특성을 다루었고, 이로부터 리튬 인터칼레이션의 전기화학분야에서 몬테 카를로 방법의 유용성을 확인하였다

• 한국진공학회:학술대회논문집
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• 한국진공학회 2011년도 제40회 동계학술대회 초록집
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• pp.319-319
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• 2011

Hydrolysis of sodium borohydride provides a safe and clean approach to hydrogen generation. Having the proper catalytic support for controlling this reaction is therefore a valuable technology. Here we demonstrate the capability of hydroxyapatite as a novel catalytic support material for hydrogen generation. Aside from being inexpensive and durable, we reveal that Ru ion exchange on the HAP surface provides a highly active support for sodium borohydride hydrolysis, exemplifying a high total turnover number of nearly 24,000 mol $H_2$/ mol Ru. Moreover, we observe that the RuHAP support exhibits a high catalytic lifetime of approximately one month upon repeated exposure to $NaBH_4$ solutions. In addition to examining surface area effects, we also identified the role of complex surface morphology in enhancing hydrolysis by the catalytic transition metal covered surface. Particularly, we found that a polycrystalline RuHAP catalytic support exhibits shorter induction times for the initial bubble formation as well as increased hydrogen generation rates as compared to a single crystal supports. The independent factor of a complex surface morphology is believed to provide enhanced sites for gas release during the initial stages of the reaction. By demonstrating the ability to shorten induction time and enhance catalytic activity through changes in surface morphology and Ru content, we find it feasible to further explore this catalyst support in the construction of a practical hydrogen generator.

• 공업화학
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• 제4권1호
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• pp.162-170
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• 1993

TBA(tert-butyl alcohol)와 ethanol로부터 고체산 촉매상에서 가솔린 옥탄가 향상제인 ETBE(ethyl tert-butyl ether)의 기상 합성반응에 관하여 연구하였다. 헤테로폴리산 촉매가 제올라이트계 촉매보다 활성이 우수하였으며, $H_4SiW_{12}O_{40}$촉매는 현재 공업적으로 이용되고 있는 Amberlyst-15 수지촉매의 대체가능성을 보였다. 또한 전이금속 양이온으로 교환된 헤테로폴리산 촉매는 수소환원에 의한 새로운 산점의 생성 및 증가에 따라 촉매활성이 크게 증가되었다. 이러한 수소환원 효과는 촉매의 환원특성과 관계되며, 환원 용이성은 $Ag^+$>$Cu^{2+}$>$Fe^{2+}$의 순서였다.

• 한국수소및신에너지학회논문집
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• 제3권2호
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• pp.25-33
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• 1992

With the aim to obtain $TiO_2$ films with an increased photorespones and absorbance in the visible region of the solar spectrum, the direct oxidation of titanium alloys were performed. In this study, $Ti-Ga_2O_3$ alloy was prepared by mixing, pressing and arc melting of appropriate amounts of titanium and $Ga_2O_3$ powder. Electrochemical measurements were performed in three electrode cell using electrolyte of 1M NaOH solution. The oxide films on $Ti-Ga_2O_3$ alloy was composed of $Ti_2O$, TiO, $TiO_2$, $Ga_2TiO_5$. The free energy efficiency (${\eta}e$) of $Ti-Ga_2O_3$ oxide films had 0.8~1.3 % and were increased with the increase of $Ga_2O_3$ content up to 10wt %. The onset potential ($V_{on}$) had -0.8V~0.9V ranges and were shifted to anodic direction with the increase of $Ga_2O_3$ content. The spectral response of Ti-$Ga_2O_3$ oxides were similar to the response of the $TiO_2$ and their $E_g$ were observed to 2.90~3.0eV. Variations of onset potential($V_{on}$) associated with electrolyte pH were -59mV/pH. This probably reflects the nature of the bonding of $OH^-$ ion to the $TiO_2$ surface, a common phenomena in the transition-metal oxides.