• Title/Summary/Keyword: Transition layer

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The biocompatibility and mechanical properties of plasma sprayed zirconia coated abutment

  • Huang, Zhengfei;Wang, Zhifeng;Yin, Kaifeng;Li, Chuanhua;Guo, Meihua;Lan, Jing
    • The Journal of Advanced Prosthodontics
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    • v.12 no.3
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    • pp.157-166
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    • 2020
  • PURPOSE. The aim of this study was to evaluate the clinical performance and reliability of plasma sprayed nanostructured zirconia (NSZ) coating. MATERIALS AND METHODS. This study consisted of three areas of analysis: (1) Mechanical property: surface roughness of NSZ coating and bond strength between NSZ coating and titanium specimens were measured, and the microstructure of bonding interface was also observed by scanning election microscope (SEM). (2) Biocompatibility: hemolysis tests, cell proliferation tests, and rat subcutaneous implant test were conducted to evaluate the biocompatibility of NSZ coating. (3) Mechanical compatibility: fracture and artificial aging tests were performed to measure the mechanical compatibility of NSZ-coated titanium abutments. RESULTS. In the mechanical study, 400 ㎛ thick NSZ coatings had the highest bond strength (71.22 ± 1.02 MPa), and a compact transition layer could be observed. In addition, NSZ coating showed excellent biocompatibility in both hemolysis tests and cell proliferation tests. In subcutaneous implant test, NSZ-coated plates showed similar inflammation elimination and fibrous tissue formation processes with that of titanium specimens. Regarding fatigue tests, all NSZ-coated abutments survived in the five-year fatigue test and showed sufficient fracture strength (407.65-663.7 N) for incisor teeth. CONCLUSION. In this study, the plasmasprayed NSZ-coated titanium abutments presented sufficient fracture strength and biocompatibility, and it was demonstrated that plasma spray was a reliable method to prepare high-quality zirconia coating.

Fabrication of Oxide Thin Films Using Nanoporous Substrates (나노기공성 기판을 사용한 산화물박막의 제조)

  • Park, Yong-Il;Prinz, Fritz B.
    • Journal of the Korean Ceramic Society
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    • v.41 no.12 s.271
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    • pp.900-906
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    • 2004
  • Solid oxide fuel cells have a limitation in their low-temperature application due to the low ionic conductivity of electrolyte materials and difficulties in thin film formation on porous gas diffusion layer. These problems can be solved by improvement of ionic conductivity through controlled nanostructure of electrolyte and adopting nanoporous electrodes as substrates which have homogeneous submicron pore size and highly flattened surface. In this study, ultra-thin oxide films having submicron thickness without gas leakage are deposited on nanoporous substrates. By oxidation of metal thin films deposited onto nanoporous anodic alumina substrates with pore size of $20nm{\sim}200nm$ using dc-magnetron sputtering at room temperature, ultra-thin and dense ionic conducting oxide films with submicron thickness are realized. The specific material properties of the thin films including gas permeation, grain/gran boundaries formation, change of crystalline structure/microstructure by phase transition are investigated for optimization of ultra thin film deposition process.

Modification and adhesion improvement of BN interfacial layers by Post-$N^+$implantation (질소 이온주입법에 의한 BN박막의 계면구조 개선 및 밀착력 향상)

  • 변응선;이성훈;이상로;이구현;한승희;이응직;윤재홍
    • Journal of the Korean Vacuum Society
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    • v.8 no.2
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    • pp.158-158
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    • 1999
  • The post ion implantation has been applied to modify early-grown BN layer and improve the adhesion of the BN films. The effect of ion implantation doses on microstructure and interlayer was investigated by FTIR and HRTEM. And the hardness and delamination life time of N+-implanted BN films were measured. With increasing the ion dose up to 5.0×1015atoms/㎠, the change of IR spectrum is observed. At 5.0×1016atoms/㎠, a drastic transition of cubic phase into hexagonal phase is detected. The change of microstructure of early-grown layers by ion implantation is confirmed using HRTEM. Both microhardness and delamination life time of BN films increase with ion dose. The modification model of early-grown BN layers is briefly discussed based on the displacement per atom and excess boron in the BN film induced by ion irradiation.

EFFECTS OF CONVERGENT ANGLE OF NOZZLE CONTRACTION ON HIGH-SPEED OPTICAL FIBER COATING FLOW (노즐 축소부 수렴각이 고속 광섬유 피복유동에 미치는 영향)

  • Park, S.;Kim, K.;Kwak, H.S.
    • Journal of computational fluids engineering
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    • v.21 no.4
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    • pp.11-18
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    • 2016
  • A numerical study is conducted on the optical fiber coating flow in a primary coating nozzle consisting of three major parts: a resin chamber, a contraction and a coating die of small diameter. The flow is driven by the optical fiber penetrating the center of the nozzle at a high speed. The axisymmetric two-dimensional flow and heat transfer induced by viscous heating are examined based on the laminar flow assumption. Numerical experiments are performed with varying the convergent angle of nozzle contraction and the optical fiber drawing speed. The numerical results show that for high drawing speed greater than 30 m/s, there is a transition in the essential flow features depending on the convergent angle. For a large convergent angle greater than $30^{\circ}$, unfavorable multicellular flow structures are monitored, which could be associated with wall boundary-layer separation. In the regime of small convergent angle, as the angle increases, the highest resin temperature at the exit of die and the coating thickness decrease but the sensitivity of coating thickness on drawing speed and the maximum shear strain of resin on the optical fiber increase. The effects of the convergent angle are discussed in view of compromise searching for an appropriate angle for high-speed optical fiber coating.

Effects of Simultaneous Bending and Heating on Characteristics of Flexible Organic Thin Film Transistors

  • Cho, S.W.;Kim, D.I.;Lee, N.E.
    • Proceedings of the Korean Vacuum Society Conference
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    • 2013.02a
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    • pp.470-470
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    • 2013
  • Recently, active materials such as amorphous silicon (a-Si), poly crystalline silicon (poly-Si), transition metal oxide semiconductors (TMO), and organic semiconductors have been demonstrated for flexible electronics. In order to apply flexible devices on the polymer substrates, all layers should require the characteristic of flexibility as well as the low temperature process. Especially, pentacene thin film transistors (TFTs) have been investigated for probable use in low-cost, large-area, flexible electronic applications such as radio frequency identification (RFID) tags, smart cards, display backplane driver circuits, and sensors. Since pentacene TFTs were studied, their electrical characteristics with varying single variable such as strain, humidity, and temperature have been reported by various groups, which must preferentially be performed in the flexible electronics. For example, the channel mobility of pentacene organic TFTs mainly led to change in device performance under mechanical deformation. While some electrical characteristics like carrier mobility and concentration of organic TFTs were significantly changed at the different temperature. However, there is no study concerning multivariable. Devices actually worked in many different kinds of the environment such as thermal, light, mechanical bending, humidity and various gases. For commercialization, not fewer than two variables of mechanism analysis have to be investigated. Analyzing the phenomenon of shifted characteristics under the change of multivariable may be able to be the importance with developing improved dielectric and encapsulation layer materials. In this study, we have fabricated flexible pentacene TFTs on polymer substrates and observed electrical characteristics of pentacene TFTs exposed to tensile and compressive strains at the different values of temperature like room temperature (RT), 40, 50, $60^{\circ}C$. Effects of bending and heating on the device performance of pentacene TFT will be discussed in detail.

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Mapping the water table at the Cheongju-Gadeok site of the Korea National Groundwater Monitoring Network using multiple geophysical methods

  • Ju, Hyeon-Tae;Sa, Jin-Hyeon;Kim, Ji-Soo
    • The Journal of Engineering Geology
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    • v.27 no.3
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    • pp.305-312
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    • 2017
  • The most effective way to distinguish subsurface interfaces that produce various geophysical responses is through the integration of multiple geophysical methods, with each method detecting both a complementary and unique set of distinct physical properties relating to the subsurface. In this study, shallow seismic reflection (SSR) and ground penetrating radar (GPR) surveys were conducted at the Cheongju-Gadeok site of the Korea National Groundwater Monitoring Network to map the water table, which was measured at 12 m depth during the geophysical surveys. The water table proved to be a good target reflector in both datasets, as the abrupt transition from the overlying unsaturated weathered rock to the underlying saturated weathered rock yielded large acoustic impedance and dielectric constant contrasts. The two datasets were depth converted and integrated into a single section, with the SSR and GPR surveys conducted to ensure subsurface imaging at approximately the same wavelength. The GPR data provided detailed information on the upper ~15 m of the section, whereas the SSR data imaged structures at depths of 10-45 m. The integrated section thus captured the full depth coverage of the sandy clay, water table, weathered rock, soft rock, and hard rock structures, which correlated well with local drillcore and water table observations. Incorporation of these two geophysical datasets yielded a synthetic section that resembled a simplified aquifer model, with the best-fitting seismic velocity, dielectric constant, and porosity of the saturated weathered layer being $v_{seismic}=1000m/s$, ${\varepsilon}_r=16$, and ${\phi}=0.32$, respectively.

3D Numerical Simulation of Ice Accretion on a Rotating Surface

  • Mu, Zuodong;Lin, Guiping;Bai, Lizhan;Shen, Xiaobin;Bu, Xueqin
    • International Journal of Aeronautical and Space Sciences
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    • v.18 no.2
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    • pp.352-364
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    • 2017
  • A novel 3D mathematical model for water film runback and icing on a rotating surface is established in this work, where both inertial forces caused by the rotation and shear forces due to the air flow are taken into account. The mathematical model of the water film runback and energy conservation of phase transition process is established, with a cyclical average method applied to simulate the unsteady parameters variation at angles of attack. Ice accretion on a conical spinner surface is simulated and the results are compared with the experimental data to validate the presented model. Then Ice accretion on a cowling surface is numerically investigated. Results show that a higher temperature would correspond to a larger runback ice area and thinner ice layer for glaze ice. Rotation would enhance the icing process, while it would not significantly affect the droplet collection efficiency for an axi-symmetric surface. In the case at angle of attack, the effect of rotation on ice shape is appreciable, ice would present a symmetric shape, while in a stationary case the shape is asymmetric.

Study of Properties of HfO2 thin film for Low Power Mobile Information Device (저전력 휴대용 통신단말을 위한 이온빔 처리된 HfO2 박막의 특성 연구)

  • Kim, Won Bae;Lee, Ho Young
    • Journal of Satellite, Information and Communications
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    • v.10 no.3
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    • pp.89-93
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    • 2015
  • Ion-beam irradiation(IB) on $HfO_2$ surface induced high-performance liquidcrystal(LC) driving at a 1-V threshold with vertical alignment of liquid crystals(LC). The high-k materials Atomic layer deposition was used to obtain LC orientation on ultrathin and high-quality films of $HfO_2$ layers. To analyze surface morphological transition of $HfO_2$ which can act as physical alignment effect of LC, atomic force microscopy images are employed with various IB intensities. The contact angle was measured to elucidate the mechanism of vertical alignment of LC on $HfO_2$ with IB irradiation. Contact angle measurement show the surface energy changes via IB intensity increasing.

Influence of Oxidation Inhibitor on Carbon-Carbon Composites: 5. Studies on Anti-oxidation Properties of the Composites (산화억제제 첨가에 의한 탄소/탄소 복합재료의 물성에 관한 연구: 5. 탄소/탄소 복합재료의 내산화성 연구)

  • 박수진;서민강;조민석;이재락
    • Polymer(Korea)
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    • v.24 no.2
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    • pp.237-244
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    • 2000
  • Phenolic resin used as a precursor of carbonized matrix for carbon-carbon composites was modified by addition of molybdenum disilicide (MoSi$_2$) in various concentrations of 0, 4, 12 and 20% by weight to improve the anti-oxidation properties of the composites. The green body was manufactured by a prepreg method and was submitted to carbonization up to 110$0^{\circ}C$. In this work, the oxidation behavior of carbon-carbon composites with MoSi$_2$ as an oxidation inhibitor was investigated at the temperature range of 600-100$0^{\circ}C$ in an air environment. The carbon-carbon composites with MoSi$_2$ showed a significantly improved oxidation resistance due to both the reduction of the porosity formation and the formation of mobile diffusion barrier for oxygen when compared to those without MoSi$_2$. Carbon active sites should be blocked, decreasing the oxidation rate of carbon. This is probably due to the effect of the inherent MoSi$_2$ properties, resulted from a formation of the protective layer against oxygen attack in the composites studied.

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Characterization of Structure and Electrical Properties of $TiO_2$Thin Films Deposited by MOCVD (화학기상증착법에 의한$TiO_2$박막의 구조 및 전기적 특성에 관한 연구)

  • Choe, Sang-Jun;Lee, Yong-Ui;Jo, Hae-Seok;Kim, Hyeong-Jun
    • Korean Journal of Materials Research
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    • v.5 no.1
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    • pp.3-11
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    • 1995
  • $(TiO_{2})$ thin films were deposited on p-Si(100) substrate by APMOCVD using titanium isopropoxide as a source material. The deposition mechanism was well explained by the simple boundary layer theory and the apparent activation energy of the chemical reaction controlled process was 18.2kcal /mol. The asdeposited films were polycrystalline anatase phase and were transformed into rutile phase after postannealing. The postannealing time and the film thikness as well as the postannealing temperature also affected the phase transition. The C-V plot exhibited typical charateristics of MOS diode, from which the dielectric constant of about 80 was obtained. The capacitance of the annealed film was decreased but those of the Nb or Sr doped films were not changed. I-V characteristics revealed that the conduction mechanism was hopping conduction. The postannealing and the doping of Nb or Sr cause to decrease the leakage current and to increase the breakdown voltage.

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