• The Transactions of The Korean Institute of Electrical Engineers
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• v.59 no.7
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• pp.1199-1205
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• 2010

The recent power system is required to a large size of facilities and high power technology according to increasing power demand. However, it could lead to spoiling the beauty of city and environment problem. The miniaturized facilities with large capacity such as GIS have been required in recent power system. The GIS(Gas Insulated Substation) using the SF6 insulation gas enables to miniaturize facilities with large capacity with high insulation performance. However, the substation installed GIS has required to new design model which is different from the conventional substation. The TRV(Transient Recovery Voltage) analysis on simple circuit may applied by differential equation. However, in case of relatively complicated system, EMTP(Electro Magnetic Transients Program) mainly has been used to design and simulate for transient analysis. This paper mainly design the 22.9 kV GIS system and analyze the transient recovery voltage of main circuit breaker using EMTP/RV. It also enables to easily design the other substation installed GIS with same maker and voltage level because the proposed GIS model consists of separated modules such as busbar, circuit breaker, bushing, CT, PT etc. Eventually, it contributes to comfortably compare the interrupting performance of circuit breaker and system TRV corresponding to the substation system configuration.

• Proceedings of the KIEE Conference
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• 2006.07a
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• pp.129-130
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• 2006

This paper presents a optimal power flow calculation algorithm considering voltage and transient stability. In this method, voltage stability margin and transient stability constraints is incorporated into a optimal power flow calculation formulation to guarantee adequate voltage and transient security levels in power system. In addition, this paper provides the Effect of Nodal Price and decomposed Element in Power System Operation. This Effect can be applied in the Estimation of Electric rates because the Electric market will be Competitive Market. The proposed method is applied to IEEE-24 Reliability Test System and the results shows the effectiveness of the method.

• Proceedings of the KIEE Conference
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• 2005.11b
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• pp.39-42
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• 2005

This paper presents a optimal power flow calculation algorithm considering voltage and transient stability In this method, voltage stability margin and transient stability constraints is incorporated into a optimal power flow calculation formulation to guarantee adequate voltage and transient security levels in power system. The proposed method is applied to IEEE-24 Reliability Test System and the results shows the effectiveness of the method.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2003.07a
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• pp.428-431
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• 2003

In this paper, the stress induced leakage currents of thin silicon oxides is investigated in the ULSI implementation with nano structure transistors. The stress and transient currents associated with the on and off time of applied voltage were used to measure the distribution of high voltage stress induced traps in thin silicon oxide films. The stress and transient currents were due to the charging and discharging of traps generated by high stress voltage in the silicon oxides. The transient current was caused by the tunnel charging and discharging of the stress generated traps nearby two interfaces. The stress induced leakage current will affect data retention in electrically erasable programmable read only memories. The oxide current for the thickness dependence of stress current, transient current, and stress induced leakage currents has been measured in oxides with thicknesses between $113.4{\AA}$ and $814{\AA}$, which have the gate area 10-3cm2. The stress induced leakage currents will affect data retention and the stress current, transient current is used to estimate to fundamental limitations on oxide thicknesses.

• Transactions on Electrical and Electronic Materials
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• v.4 no.6
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• pp.32-37
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• 2003

In this paper, the trap characteristics of thin silicon oxides is investigated in the ULSI implementation with nano structure transistors. The stress and transient currents associated with the on and off time of applied voltage were used to measure the distribution of high voltage stress induced traps in thin silicon oxide films. The stress and transient currents were due to the charging and discharging of traps generated by high stress voltage in the silicon oxides. The transient current was caused by the tunnel charging and discharging of the stress generated traps nearby two interfaces. The stress induced leakage current will affect data retention in electrically erasable programmable read only memories. The oxide current for the thickness dependence of stress current, transient current, and stress induced leakage currents has been measured in oxides with thicknesses between 113.4nm and 814nm, which have the gate area 10$\^$-3/ $\textrm{cm}^2$. The stress induced leakage currents will affect data retention, and the stress current and transient current is used to estimate to fundamental limitations on oxide thicknesses.

• Journal of the Korean Solar Energy Society
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• v.26 no.2
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• pp.61-67
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• 2006

The use of the wind energy resource is a rapidly growing area world-wide. The number of installed units is continuously increasing, and therefore, it is important to respect and to deal with the impact of wind power generation system. From the view of an electric grid utility, there is a major problem with the impact of the wind system on the voltage of the electric grid, to which a turbine is connected. In this paper, it is investigated the voltage impact and transient state analysis on distribution line, with which wind power generation system is connected. Connections of wind power system usually occur to voltage drop due to reactive power absorption and sometime result in higher than nominal voltage.

• Journal of the Korean Institute of Illuminating and Electrical Installation Engineers
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• v.16 no.2
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• pp.113-120
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• 2002

This paper describes characteristics of transient voltage waveforms caused by human electrostatic discharges(ESDs). For purpose of achieving the statistics on the meaningful amplitude and initial slope for transient ESD voltage waveforms, transient voltages due to human ESDs in various conditions were observed. A voltage measuring system with a wide bandwidth from DC to 400[MHz] was employed. ESD voltage waveforms are approximately the same as ESD current waveforms. Also the simulated results, which are calculated by the reposed equivalent circuit, are closely similar to the measured voltage waveforms. ESD voltage waveforms are strongly dependent on the approach speed and material of intruder, a fast approach causes ESD voltage waveform with a steep rise time than for a slow approach. The voltage waveforms from dialect finger ESDs have a relatively long rise time of 10∼30[ns], but their peaks are low. On the other side ESD voltage waveforms causer by screwdriver with insulating handle have a steep slope with a very short, less than 1[ns] rise time, but their initial spikes are extremely high The obtained results in this work would be applied to solve ESD problems for low voltage and small current electronic devices.

• Journal of IKEEE
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• v.26 no.1
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• pp.124-128
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• 2022

Conventional LDO regulator external capacitors can reduce transient response characteristics such as overshoot and undershoot. However, the capacitorless LDO regulator proposed in this study applied body technology to the pass transistor to improve the transient response and provide excellent current drive capability. The operating conditions of the proposed LDO regulator are set to an input voltage that varies from 3.3V to 4.5V, a maximum load current of 200mA, and an output voltage of 3V. As a result of the measurement, it was found that when the load current was 100 mA, the voltage was 95 mV in the undershoot state and 105 mV in the overshoot state.

• Journal of the Korean Institute of Illuminating and Electrical Installation Engineers
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• v.16 no.1
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• pp.92-99
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• 2002

Transient in an electric distribution system are mainly generated by switching. This paper presents analysis of switching surge and means of limiting the voltage magnification transient for high voltage power systems by using the EDSA's EMTAP software package. One means of limiting the voltage magnification transient is to convert the end-user power factor contraction capacitor banks to harmonics filters. An inductance in series with the capacitor bank was used to decrease the transient voltage at the customer bus to acceptable levels. And also simulation results used the EDSA harmonics analysis program show the effect of harmonics reduction.

• Proceedings of the KIEE Conference
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• 2001.05a
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• pp.245-247
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• 2001

This paper presents a series of simulation results of transient stability on SCOPF operated power system whose transmission capabilities are limited by voltage stability. Three steps of voltage security guidelines, 5[%], 7[%], 10[%] are introduced to increase power transfer from generation centers to load center and observed the effects of voltage guidelines to transient stability for three kinds of load level(peak, medium, off-peak). As a result, dynamic characteristics weren't affected by the voltage security limits in model system, but became worse for the off-peak level than peak case, and sustain oscillations are observed for the all load level. This gives us some intitutions for the development and applications of security limits to use SCOPF program in open electric market.