• Proceedings of the Korean Vacuum Society Conference
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• 2011.02a
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• pp.216-216
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• 2011

There have been various direct or indirect methods to measure the characteristics of plasma. Comparing to direct method like Langmuir probe method, indirect measurements which give information as some external parameters like current, voltage, or phase are easier to obtain. In this research, an indirect method to measure averaged plasma density in a transformer coupled plasma(TCP) has been proposed and evaluated. With a simple analytic model connecting electrical characteristics to plasma impedance, direct measurement via double Langmuir probe has been performed. This result may play a meaningful role to diagnose TCP or similar plasma sources

• Proceedings of the KIEE Conference
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• 2002.07c
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• pp.1760-1762
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• 2002

In this work we develop an equivalent circuit model of TCP(transformer coupled plasma) source and investigate matching characteristic. The developed circuit model includes transmission line, standard-type impedance matching network and displacement current in the plasma source. The impedance of TCP is calculated by previously developed program for various source parameters and dependance of components of matching impedance on the value of source impedance is investigated.

• Journal of the Korean Vacuum Society
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• v.19 no.3
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• pp.230-235
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• 2010

In this paper, we controlled the deposition rate and reflective index with process conditions that are TCP power, gas flow ratio and bias for optical properties of $SiO_2$ thin film using TCP-CVD equipment. We obtained a excellent $SiO_2$ thin film which has a excellent uniformity (<1 [%]), deposition rate (0.28 [${\mu}m$/ min]) and reflective index (1.4610-1.4621) within 4" wafer with process conditions ($SiH_4:O_2$=50 : 100 [sccm], TCP power 1 [kW], bias 200 [W]) at [$300^{\circ}C$].

• Proceedings of the Korean Vacuum Society Conference
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• 1995.02a
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• pp.24-24
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• 1995

• Proceedings of the Korean Society Of Semiconductor Equipment Technology
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• 2003.05a
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• pp.1-3
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• 2003

평판형 안테나를 채택한 TCP (Transformer Coupled Plasma) 형태의 CVD 장비를 이용하여 비정질의 실리콘 박막을 증착 하였다. 비정질 실리콘 박막은 태양전지 및 TFT-LCD 등의 디스플레이 제품 등에 다양하게 적용되고 있는데, 일반적으로 CCP(Capacitor Coupled Plasma) 형태의 CVD 장비에서 증착되어 왔다. TCP-CVD 장비는 CCP-CVD에 비해 플라즈마 내의 높은 이온밀도 및 저압, 저온에서 공정이 가능할 뿐만 아니라, 기판 바이어스 전압을 독립적으로 조절할 수 있어 이은에 의한 증착막의 결함을 낮출 수 있는 장점이 있다. 본 발표에서는 자체 기술로 제작된 TCP-CVD의 소개와 증착된 비정질 실리콘 박막의 특성평가를 위한 라만 분석 및 dark conductivity 데이타를 다루었다. 또한 비정질 실리콘 박막의 반도체 소자의 응용성을 보기 위하여 3족 및 5족의 불순물을 도핑하여 전기전도도의 변화를 측정하였다.

• Proceedings of the KIEE Conference
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• 2002.07c
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• pp.1757-1759
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• 2002

Global simulator for $CF_4$ discharge in transformer coupled plasma (TCP) source is developed and simulations arc performed under various conditions. The developed simulator is based on a set of space averaged fluid equations for electrons, positive ions, neutrals and radicals of $CF_4$ plasma. And the used absorbed power by electrons is calculated by a 2-dimensional heating model[1].

• Journal of the Institute of Electronics Engineers of Korea SD
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• v.39 no.1
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• pp.31-38
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• 2002

In order to improve the 0.35 $mutextrm{m}$-via hole etching process the etching characteristic of the gas $C_2F_{6}$ has been analyzed. The samples were triple-layer films(TEOS/SOG/TEOS) on 8-inch wafers and the orthogonal array matrix technique was used for the process. The equipment for etching was the transformer coupled plasma (TCP) source which is a type of high density plasma(HDP). This experiment showed the etching rate for $C_2F_{6}$ was 0.8 $mutextrm{m}$/min-1.1 $mutextrm{m}$/min and the measured uniformity was under $pm$6.9% in the matrix window. The CD skew comparison between pre and post-etching was under 10% which is an outstanding results in the window of profile in anisotropic etching. There was no problem in C2F6 with the flow rate of 20sccm, but when 14sccm of $C_2F_{6}$ was supplied there was a recess problem on the inner wall of SOG film. Consequently the etching characteristic of $C_2F_{6}$ shows a fast etching rate and a very wide process window in HDP TCP.

• Journal of the Korean Vacuum Society
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• v.19 no.2
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• pp.148-154
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• 2010

We have fabricated $SiO_2$ oxidation thin films by TCP-CVD (transformer coupled plasma chemical vapor deposition) method for passivation layer of OLED (organic light emitting diode). The purpose of this paper is to control and estimate the deposition rate and refracive index characteristics with process parameters. They are power, gas condition, distance of source and substrate and process temperature. The results show that transmittance of thin films is over 90%, rapid deposition rate and stable reflective index from 1.4 to 1.5 at controled process conditions. They are $SiH_4$ : $O_2$ = 30 : 60 [sccm] gas condition, 70 [mm] distance of source and substrate, no-biased substrate and under 80 [$^{\circ}C$] process temperature.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.16 no.12S
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• pp.1175-1180
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• 2003

Transformer Coupled Plasma Chemical Vapor Deposited (TCP-CVD) silicon nitride (SiNx) is widely used as a gate dielectric material for thin film transistors (TFT). This paper reports the SiNx films, grown by TCP-CVD at the low temperature (30$0^{\circ}C$). Experimental investigations were carried out for the optimization o(SiNx film as a function of $N_2$/SiH$_4$ flow ratio varying ,3 to 50 keeping rf power of 200 W, This paper presents the dielectric studies of SiNx gate in terms of deposition rate, hydrogen content, etch rate and leakage current density characteristics lot the thin film transistor applications. And also, this work investigated means to decrease the leakage current of SiNx film by employing $N_2$ plasma treatment. The insulator layers were prepared by two step process; the $N_2$ plasma treatment and then PECVD SiNx deposition with SiH$_4$, $N_2$gases.

• Proceedings of the Korean Nuclear Society Conference
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• 1998.05b
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• pp.946-950
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• 1998

다목적 양성자 가속기(Korea Multi-purpose Accelerator Complex; KOMAC)를 위한 Duoplasmatron이온원이 설계 및 제작되었다. 빔인출을 위한 60㎸ 고전압시스템의 테스트가 수행되었으며 50㎸인출전압에서 20㎃의 수소 빔을 인출 할수 있었다. 이 이온원은 30㎸ 인출전압에서 20㎃이상의 빔전류와 90% 빔전류에서 0.5$\pi$mm mrad정도의 낮은 수준의 빔에미턴스와 약 50% 양성자분을을 얻었다. 고밀도 고주파 플라즈마 원(예를들어 헬리콘와 Transformer coupled plasma;TCP 플라즈마원)이 양성자 및 수소 음이온원으로의 유용성에 대한 연구가 진행중이다.