• Clinical and Experimental Reproductive Medicine
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• v.30 no.3
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• pp.249-254
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• 2003

Ectopic pregnancy is a common medical problem that is difficult to diagnose and potentially may lead to significant mortality or morbidity. The incidence of ectopic pregnancy is definitely increasing ue to the rise in pelvic inflammatory disease (PID), pelvic surgery, intrauterine device (IUD), and assisted reproductive technologies, such as in vitro fertilization and embryo transfer (IVF-ET). Combined ectopic gestations are much rare and their true incidence is unknown. Multiple ectopic gestations may occur in a variety of locations. The majority involve one or both fallopian tubes. We report a case of combined tubal and cervical pregnancies, and discuss their management.

• Journal of the Korean Applied Science and Technology
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• v.17 no.1
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• pp.29-35
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• 2000

In this study, ultra-thin films of (N-docosyl quinolinium)-TCNQ(1:2) complex were prepared on the hydrophilic substrate by Langmuir-Blodgett(LB) technique. The characteristics of ${\pi}-A$ isotherms were studied to find optimum conditions of deposition by varying temperature of subphase, compression speed of barrier and amount of spreading solution. Using UV-vis spectra, capacitance and thickness, deposition of LB films was confirmed together with the thickness of the naturally oxidized aluminum film inside a device and dielectric constant of (N-docosyl quinolinium)-TCNQ(1:2) complex. The dielectric constant of LB film was about $4.59{\sim}5.58$. The electrical properties of (N-docosyl quinolinium)-TCNQ(1:2) complex were investigated at room temperature. The conductivity of this film measured by the direction of either vertical or horizontal axis was found to have a quite different value.

• Journal of Power Electronics
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• v.15 no.6
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• pp.1654-1663
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• 2015

Compared to LC resonance, LCL resonance has distinct advantages such as a large resonant capability, low voltage and current stresses of the power device, constant voltage or current output characteristics, and fault-tolerance capability. Thus, LCL resonant compensation is employed for a movable Inductive Contactless Power Transfer (ICPT) system with a multi-load in this paper, which achieves constant current output characteristics. Peculiarly, the primary side adopts a much larger compensation inductor than the primary leakage inductor to lower the reactive power, reduce the input current ripple, generate a large current in the primary side, and realize soft-switching. Furthermore, this paper proposes an approximate resonant point for large inductor-ratio LCL resonant compensation through fundamental wave analysis. In addition, the PWM control strategy is used for this system to achieve constant current output characteristics. Finally, an experimental platform is built, whose secondary E-Type coils can ride and move on a primary rail. Simulations and experiments are conducted to verify the effectiveness and accuracy of both the theory and the design method.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.18 no.3
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• pp.276-283
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• 2005

Magnetic tunneling transistor (MTT) device using the amorphous n-type Si semiconductor film for base and collector consisting of the [CoFe/NiFe](free layer) and Si(top layer) multilayers was used to study the spin-dependent hot electron magnetocurrent (MC) and tunneling magnetoresistance (TMR) at room temperature. A large MC of 40.2 % was observed at the emitter-base bias voltage ( $V_{EB}$ ) of 0.62 V. The increasing emitter hot current and transfer ratio ( $I_{C}$/ $I_{E}$) as $V_{EB}$ are mainly due to a rapid increase of the number of conduction band states in the Si collector. However, above the $V_{EB}$ of 0.62 V, the rapid decrease of MC was observed in amorphous Si-based MTT because of hot electron spin-dependent elastic scattering across CoFe/Si interfaces.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.11 no.6
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• pp.428-435
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• 1998

SOI-like-bulk CMOS device is proposed, which having the advantages of SOI(Silicon On Insulator) and protects short channel effects efficiently with adding partial epitaxial process at standard CMOS process. SOI-like-bulk NMOS and PMOS with 0.25${\mu}{\textrm}{m}$ gate length have designed and optimized through analyzing the characteristics of these devices and applying again to the design of processes. The threshold voltages of the designed NMOS and PMOS are 0.3[V], -0.35[V] respectively and those have shown the stable characteristics under 1.5[V] gate and drain voltages. The leakage current of typical bulk-CMOS increase with shortening the channel length, but the proposed structures on this a study reduce the leakage current and improve the subthreshold characteristics at the same time. In addition, subthreshold swing value, S is 70.91[mV/decade] in SOI-like-bulk NMOS and 63.37[mV/ decade] SOI-like-bulk PMOS. And the characteristics of SOI-like-bulk CMOS are better than those of standard bulk CMOS. To validate the circuit application, CMOS inverter circuit has designed and transient & DC transfer characteristics are analyzed with mixed mode simulation.

• Proceedings of the Materials Research Society of Korea Conference
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• 2011.05a
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• pp.39.2-39.2
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• 2011

With the steady increase in the demand for flexible devices, mainly in display panels, researchers have focused on finding a novel material that have excellent electrical properties even when it is bended or stretched, along with superior mechanical and thermal properties. Graphene, a single-layered two-dimensional carbon lattice, has recently attracted tremendous research interest in this respect. However, the limitations in the growing method of graphene, mainly chemical vapor deposition on transition metal catalysts, has posed severe problems in terms of device integration, due to the laborious transfer process that may damage and contaminate the graphene layer. In addition, to lower the overall cost, a fabrication technique that supports low temperature and low vacuum is required, which is the main reason why solution-based process for graphene layer deposition has become the hot issue. Nonetheless, a direct deposition method of large area, few-layered, and uniform graphene layers has not been reported yet, along with a convenient method of patterning them. Here, we report an evaporation-induced technique for directly depositing few layers of graphene nanosheets with excellent uniformity and thickness controllability on any substrate. The printed graphene nanosheets can be patterned into desired shapes and structures, which can be directly applicable as flexible and transparent electrode. To illustrate such potential, the transport properties and resistivity of the deposited graphene layers have been investigated according to their thickness. The induced internal flow of the graphene solution during tis evaporation allows uniform deposition with which its thickness, and thus resistivity can be tuned by controlling the composition ratio of the solute and solvent.

• Journal of Welding and Joining
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• v.18 no.3
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• pp.83-88
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• 2000

Laser cladding processing allows rapid transfer of heat to the material being processed with minimum conduction into base metal, resulting in low total heat input. The effects of Nd:YAG laser cladding with wire feeding on the mechanical properties of Inconel alloy were investigated. inconel alloy is used as the material of nuclear steam generator tubing because of its mechanical properties and corrosion resistance properties. The device for Nd:YAG laser cladding with wire feeding was designed. It consists of the wire feeding system, the wire cladding system and the shielding gas system which prevents the clad layer from being oxidized. Experimental as results indicated that the wire feeding direction and position were important for laser cladding with wire feeding. The wire feeding speed should be adapted according to cladding speed for good shaping of clad layer. The effect of heat on the HAZ size can be limited and the growth of grain size of HAZ size was not serious. The hardness of clad layer and heat affected zone increased with increasing of cladding speed.

• Journal of Digital Convergence
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• v.12 no.7
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• pp.285-290
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• 2014

In these days the patient can be easy to see the treatment results at home without going directly to hospital. Despite the many advantages that the patient is got optimum service timely, the currently used personal healthcare devices have no compatibility because the manufacturer use the proprietary software and hardware protocols. For these issues, standardization is required between the set-top box and the individual healthcare devices. In this paper, we designed the healthcare set-top box possible to biometric data transmission by using a standard IEEE P11073 between the device and the set-top box. Because the set-top box using IEEE P11073 standardization can transfer data independently, we are expected to make it contribute significantly to the healthcare business.

• Journal of the Microelectronics and Packaging Society
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• v.20 no.2
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• pp.1-9
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• 2013

Recently flexible electronic devices have attracted a great deal of attention because of new application possibilities including flexible display, flexible memory, flexible solar cell and flexible sensor. In particular, development of flexible memory is essential to complete the flexible integrated systems such as flexible smart phone and wearable computer. Research of flexible memory has primarily focused on organic-based materials. However, organic flexible memory has still several disadvantages, including lower electrical performance and long-term reliability. Therefore, emerging research in flexible electronics seeks to develop flexible and stretchable technologies that offer the high performance of conventional wafer-based devices as well as superior flexibility. Development of flexible memory with inorganic silicon materials is based on the design principle that any material, in sufficiently thin form, is flexible and bendable since the bending strain is directly proportional to thickness. This article reviews progress in recent technologies for flexible memory and flexible electronics with inorganic silicon materials, including transfer printing technology, wavy or serpentine interconnection structure for reducing strain, and wafer thinning technology.

• Korean Journal of Air-Conditioning and Refrigeration Engineering
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• v.28 no.5
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• pp.186-194
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• 2016

As a turbulence-enhancing device, a mixing vane installed at a spacer grid of the fuel assembly plays a role in improving the convective heat transfer by generating either swirl flow in the subchannels or cross flow between fuel rod gaps. Therefore, both configuration and arrangement pattern of a mixing vane are important factors that determine the performance of a mixing vane. In this study, in order to examine the flow distribution features inside $5{\times}5$ fuel assembly with swirl-type mixing vanes used in benchmark calculation of OECD/NEA, simulations were conducted with commercial CFD software ANSYS CFX R.14. Predicted results were compared to data measured from MATiS-H (Measurement and Analysis of Turbulent Mixing in Subchannels-Horizontal) test facility. In addition, the effect of swirl-type mixing vanes on flow pattern inside the fuel assembly was described.