• Proceedings of the Korean Vacuum Society Conference
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• 2013.02a
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• pp.659-659
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• 2013

Recently, graphene has been intensively studied due to the fascinating physical, chemical and electrical properties. It shows high carrier mobility, high current density, and high thermal conductivity compare with conventional semiconductor materials even it has single atomic thickness. Especially, since graphene has fantastic electrical properties many researchers are believed that graphene will be replacing Si based technology. In order to realize it, we need to prepare the large and uniform graphene. Chemical vapor deposition (CVD) method is the most promising technique for synthesizing large and uniform graphene. Unfortunately, CVD method requires transfer process from metal catalyst. In transfer process, supporting polymer film (Such as poly (methyl methacrylate)) is widely used for protecting graphene. After transfer process, polymer layer is removed by organic solvents. However, it is impossible to remove it completely. These organic residues on graphene surface induce quality degradation of graphene since it disturbs movement of electrons. Thus, in order to get an intrinsic property of graphene completely remove of the organic residues is the most important. Here, we introduce modified wet graphene transfer method without PMMA. First of all, we grow the graphene from Cu foil using CVD method. And then, we deposited several metal films on graphene for transfer layer instead of PMMA. Finally, we fabricate graphene FET devices. Our approaches show low defect density and non-organic residues in comparison with PMMA coated graphene through Raman spectroscopy, SEM and AFM. In addition, clean graphene FET shows intrinsic electrical characteristic and high carrier mobility.

• Proceedings of the KIEE Conference
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• 2004.11c
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• pp.212-214
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• 2004

Hardware implemented ring buffer systems and methods are presented for the effective management of the ring buffer in TCP/IP communication. The layer interface of the ring buffer systems transfer free buffer and used buffer size information to the TCP/IP stack upper or low layer. The pointer updation interface calculates a temporary pointer from the data size which is needed by the present pointer of the ring buffer and upper or lowyer layer. The pointer manager of the ring buffer systems is responsible for saving the present pointer of the ring buffer, updating the ring buffer pointer to the new pointer, calculating the free buffer size and used buffer size of the ring buffer, and transferring the information to the upper layer. The ring buffer systems help the TCP/IP layer and TCP/IP upper or lower layer to decide the sending or receiving data size effectively. The delay of transferring data can be lowered by the ring buffer system.

• 한국정보디스플레이학회:학술대회논문집
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• 2009.10a
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• pp.1571-1572
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• 2009

Polymer solar cells were fabricated with gravure printing process and the effect of thermal annealing of gravure printed organic layer was investigated. The layer structure of polymer solar cells is glass / ITO / hole transfer layer / active layer / Al structure was fabricated. For the active layer, 1:1 ratio of poly-3-hexylthiophene (P3HT) and [6,6]-phenyl C61-butyric acid methyl ester (PCBM) mixture was applied. The P3HT/PCBM blend was gravure printed onto the substrates. The effect of thermal annealing was investigated by changing annealing time and the number of printing. Maximum 3.6% of power conversion efficiency was achieved with gravure printing of organic layer and thermal annealing in this work.

• Journal of the Institute of Electronics Engineers of Korea SD
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• v.41 no.7
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• pp.63-70
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• 2004

This paper describes the link layer and physical layer of the Serial ATA which is the next generation for parallel ATA specification that defines data transfer between PC and peripheral storage devices. The link layer consists of CRC generation/error detection, 8b/10b decoding/encoding, primitive generation/detection block. For the physical layer, it includes CDR(Cock Data Recovery), transmission PLL, serializer/de-serializer. It also includes generation and receipt of OOB(Out-Of-Band) signal, impedance calibration, squelch circuit and comma detection/generation. Additionally, this chip includes TCB(Test Control Block) and BIST(Built-In Selt Test) block to ease debugging and verification. It is fabricated with 0.18${\mu}{\textrm}{m}$ standard CMOS cell library. All the function of the link layer operate properly. For the physical layer, all the blocks operate properly but the data transfer is limited to the 1.28Gbps. This is doe to the affection or parasitic elements and is verified with SPICE simulation.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2002.11a
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• pp.542-545
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• 2002

High performance organic electroluminescnet(EL) devices which are composed of organic thin multilayer films are fabricated. The basic structure is ITO/Emitting layer/LiF/Al in which have a blended emitting layer. The emitting layer is consisted of a host material(N,N' diphenyl-N,N' (3-methyl phenyl)-l,l'-biphenyl-4,4'diamine)(TPD)) and a guest emitting material(poly(3-hexylthiophehe)(P3HT)). We think that the energy transfer in blending layer occurred from TPD to P3HT. Red emitting multilayer EL devices were fabricated using tris(8-hydroxyqunolinate) aluminum$(Alq_3)$ as electron transport material. The device structure of ITO/blending layer(TPD+P3HT)$/Alq_3$/LiF/Al was employed. In the Voltage-current-luminance characteristics of multilayer device, the device tum on at the 2V and the luminance of $10{\mu}W/cm^2$ obtain at l0V. Red emission peak at 640nm was observed with this device structure. We have presented evidence that the excitation energy migration between a polymeric host and guest has to be explained. And by using multilayer, the red light emitting EL device enhances not only Voltage-current-luminance characteristic but also stability of device.

• Journal of IKEEE
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• v.25 no.3
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• pp.467-472
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• 2021

Stable operation of semiconductor devices is needed even at high temperatures. Among the structures of semiconductor devices, the area that can cause unstable electrical responses at high temperatures is the contact layer between the metal and the semiconductor. In this study, the effect of annealing conditions included in the process of forming a contact layer of nickel silicide(NiSix) on a p-type SiC layer on the specific contact resistance of the contact layer and the total resistance between the metal and the semiconductor was investigated. To this end, a series of electrodes for TLM (transfer length method) measurements were patterned on the 4 inch p-type SiC layer under conditions of changing annealing temperature of 1700 and 1800 ℃ and annealing time of 30 and 60 minutes. As a result, it was confirmed that the annealing conditions affect the resistance of the contact layer and the electrical stability of the device.

• Informatization Policy
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• v.25 no.4
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• pp.108-120
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• 2018

With the rise of the Fourth Industrial Revolution and I-Korea 4.0, both of which pursue strategies for industrial innovation and for the solution to social problems, the real estate industry needs to change in order to make effective use of available space in smart environments. The implementation of smart spaces is a promising solution for this. The smart space is defined as a good use of space, whether it be a home, office, or retail store, within a smart environment. To enhance the use of smart spaces, efficient decision-making and well-timed and accurate interaction are required. This paper proposes a smart space based on platform which takes advantage of emerging technologies for the efficient storage, processing, analysis, and utilization of big data. The platform is composed of six layers - collection, transfer, storage, service, application, and management - and offers three service frameworks: activity-based, market-based, and policy-based. Based on these smart space services, decision-makers, consumers, clients, and social network participants can make better decisions, respond more quickly, exhibit greater innovation, and develop stronger competitive advantages.

• Journal of the Korea Institute of Information Security & Cryptology
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• v.18 no.1
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• pp.59-65
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• 2008

In security layer in the CDMA2000 1x EV-DO, a standard - C.S0024-a v2.0 is being accomplished under the project of 3GPP2(3rd Generation Partnership Project2). Therefore, a security device is needed to implement the security layer which is defined on the standard document for data transfer security between AT(Access Terminal) and AN(Access Network) on CDMA2000 1x EV-DO environment. This paper realizes the security layer system that can make safe and fast transfer of data between AT and AN. It could be applied to various platform environments by designing and implementing the Security Layer in the CDMA2000 1x EV-DO Security Layer to which applies C.S0024-A v2.0 of 3GPP2.

• Proceedings of the Korean Society of Tribologists and Lubrication Engineers Conference
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• 2002.05a
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• pp.226-234
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• 2002

A systematic study of the role of transfer films on friction properties was performed with various temperatures in the brake system. An NAO friction material specimens containing 9 ingredients were tested using a pad-on-disk type friction tester A new method of measuring the transfer film thickness was developed by considering the electrical resistance of the transfer film using a 4-point probe technique. The properties of transfer film such as surface morphology and film distribution vaied according to the relative amount of graphite and magnesium oxide. By using SEM, it was possible to obtain information about the chemical composition of the transfer film. Results showed that there detected a threshold value of the relative amount of a two active materials to maintain a certiain thickness of a transfer film. Results also showed that formation of friction layer generated on the friction surface was strongly affected by chemical action of two ingredients during sliding due to chemical reaction of solid lubricants at different interface temperature. The results suggested that no apparent relationship between transfer film thickness and the average friction coefficient was founded and friction characteristics were affected more by the property of the solid lubricant and abrasive in the material.

• Journal of Bio-Environment Control
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• v.22 no.2
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• pp.108-115
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• 2013

This study was conducted to suggest a model to calculate the overall heat transfer coefficient of single layer covering for various greenhouse conditions. There was a strong correlation between cover surface temperature and inside air temperature of greenhouse. The equations to calculate the convective and radiative heat transfer coefficients proposed by Kittas were best fitted for calculation of the overall heat transfer coefficient. Because the coefficient of linear regression between the calculated and measured cover surface temperature was founded to 0.98, the slope of the straight line is 1.009 and the intercept is 0.001, the calculation model of overall heat transfer coefficient proposed by this study is acceptable. The convective heat transfer between the inner cover surface and the inside air was greater than the radiative heat transfer, and the difference increased as the wind speed rose. The convective heat transfer between the outer cover surface and the outside air was less than the radiative heat transfer for the low wind speed, but greater than for the high wind speed. The outer cover convective heat flux increased proportion to the inner cover convective heat flux linearly. The overall heat transfer coefficient increased but the cover surface temperature decreased as the wind speed increased, and the regression function was founded to be logarithmic and power function, respectively.