• 한국생산제조학회지
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• 제9권4호
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• pp.75-84
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• 2000

The main goal of our research is to compensate the milled surface errors induced by the tool deflection effects, which occur during the milling process. First, we predict cutting forces and tool deflection amount. Based on predicted deflection effects, we model milled surface shapes. We present a compensation methodology , which can generate a new tool trajectory, which is determined so as to compensate the milled surface errors. By considering manufacturing tolerance, tool path compensation is generalized. To validate the approaches proposed in this paper, we treat an illustrative example of profile milling process by using flat end mill. Simulation and experimental results are shown.

• 한국정밀공학회:학술대회논문집
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• 한국정밀공학회 2000년도 추계학술대회 논문집
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• pp.445-450
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• 2000

In this paper, a numerical method is proposed for cam synthesis. kinematics of closed loop system with cam and follower is presented using relative coordinates. The system is transformed into an open loop system by cutting fictitiously higher-pair contact of cam and follower and envelope constraint equations are derived. Follower constraint equations are derived from the motion of the follower ends. The joint variables and follower profile parameters are calculated from the envelope constraint equations and follower constraint equations by using the Newton - Raphson iterative method. Algorithms for cam synthesis are presented and simulations are done to verify the effectiveness of the proposed method.

• 한국전자파학회지:전자파기술
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• 제2권4호
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• pp.26-32
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• 1991

한반도 상공의 오존층 및 대기층 참사를 임무로 하는 과학관측로케트(KSR-420s)는 비행중에 갖게되는 온도, 응력, 가속도, 압력, 자세, Ranging 등의 비행상태 정보와 오존층, 전리층, X-선등의 관측데이타를 지상으로 전송한다. 본 연구에서는 KSR-420s의 비행궤도를 추적하면서 전송되어 오는 신호를 수신 처리하기위한 텔레메트리 지상시스템을 설계하였다.

• 제어로봇시스템학회:학술대회논문집
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• 제어로봇시스템학회 2001년도 ICCAS
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• pp.85.4-85
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• 2001

A learning controller is presented for repetitive walking motion of biped robot. The learning control scheme learns the approximate inverse dynamics input of biped walking robot and uses the learned input pattern to generate an input profile of different walking motion from that learnt. In the learning controller, the PID feedback controller takes part in stabilizing the transient response of robot dynamics while the feedforward learning controller plays a role in computing the desired actuator torques for feedforward nonlinear dynamics compensation in steady state. It is shown that all the error signals in the learning control system are bounded and the robot motion trajectory converges to the desired one asymptotically. The proposed learning control scheme is ...

• 제어로봇시스템학회논문지
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• 제12권7호
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• pp.671-678
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• 2006

This article proposes a smooth path generation and time scheduling method for general tasks defined by non-smooth path segments in industrial robotic applications. This method utilizes a simple 3rd order polynomial function for smooth interpolation between non-smooth path segments, so that entire task can effectively maintain constant line speed of operation. A predictor-corrector type numerical mapping technique, which correlates time based speed profile to the smoothed path in Cartesian space, is also provided. Finally simulation results show the feasibility of the proposed algorithm.

• 한국해안해양공학회지
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• 제7권3호
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• pp.227-232
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• 1995

크노이드파의 발생에 필요한 Jacobian 매개변수 산정에 관한 새로운 방법이 제안되었다. 제안된 방법에서는 수심, 파고 및 파의 주기 또는 파장이 주어지면, Newton-Raphson 방법과 산술 및 기하평균방법을 이용하여 기존의 시행착오법과 비교하여 과정은 더욱 단순하면서도 동일한 정밀도를 갖는 결과를 제공한다.

• 반도체디스플레이기술학회지
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• 제6권3호
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• pp.25-33
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• 2007

A computationally efficient and accurate Monte Carlo (MC) simulator of electron beam lithography process, which is named SCNU-EBL, has been developed for semiconductor nanometer pattern design and fabrication. The simulator is composed of a MC simulation model of electron trajectory into solid targets, an Gaussian-beam exposure simulation model, and a development simulation model of photoresist using a string model. Especially for the trajectories of incident electrons into the solid targets, the inner-shell electron scattering of an target atom and its discrete energy loss with an incident electron is efficiently modeled for multi-layer resists and heterogeneous multi-layer targets. The simulator was newly applied to the development profile simulation of ZEP520 positive photoresist for NGL(Next-Generation Lithography). The simulation of ZEP520 for electron-beam nanolithography gave a reasonable agreement with the SEM experiments of ZEP520 photoresist.

• 시스템엔지니어링학술지
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• 제1권1호
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• pp.67-72
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• 2005

Design and optimization study has been performed to obtain a supersonic air.launching mission for the nanosat launcher. Given mission is to launch 10kg payload to target orbit of $700km{\times}700km$. Additional design constraints are imposed by the mother plane. After the required velocity is obtained, the stag ing optimization is carried out. Serial analyses for the propulsion system and aerodynamics are performed then, the rocket trajectory optimization has been carried out. After several mission design and optimization iterations, the optimized mission which satisfies the mission target is obtained. Total weight of the three-staged air-launching rocket is 1231.4kg and the payload weight is 10 kg.

• 제어로봇시스템학회논문지
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• 제16권1호
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• pp.53-60
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• 2010

We propose a motion planning method for autonomous mobile robots. In order to minimize traveling time, a smooth path and a time optimal velocity profile should be generated under kinematic and dynamic constraints. In this paper, we develop an effective and practical method to generate a good solution with lower computation time. The initial path is obtained from voronoi diagram by Dijkstra's algorithm. Then the path is improved by changing the graph and path simultaneously. We apply the dynamic programming algorithm into the stage of improvement. Simulation results are presented to verify the performance of the proposed method.

• 공업화학
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• 제20권1호
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• pp.99-103
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• 2009

반도체 소자의 실리콘 게이트 전극 식각공정은 산화막에 대한 높은 식각 선택비와 정확한 식각형상 제어 등의 공정요구 조건을 충족시키기 위해 고밀도 플라즈마 식각공정을 사용하나 식각 후 notching이 발생되는 문제점을 보이고 있다. 특이하게 도핑 되지 않은 비정질 실리콘을 게이트 전극 물질로 사용한 경우 발생된 notching의 위치가 가장 외곽에 위치한 게이트 전극선의 바깥쪽에서 주로 발생되는 것이 관찰 되었다. 본 연구에서는 $Cl_2/HBr/O_2$의 식각기체 구성으로 notching 발생이 식각변수들에 따라 받는 경향성을 파악하고, 식각장치 내에서 실리콘 기판에 도달하는 식각 이온들의 진행경로를 분석하였다. 주 원인은 플라즈마 내의 식각 활성종 이온들이 대전효과에 의하여 궤적의 왜곡이 일어나 notching 현상이 발생되는 것으로 파악되었다. 이 결과를 바탕으로 도핑 되지 않은 비정질 실리콘 게이트 식각에서 발생하는 notching의 형성기구를 정성적으로 설명하였다.