• Title/Summary/Keyword: Top oxide layer

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MoO3/p-Si Heterojunction for Infrared Photodetector (MoO3 기반 실리콘 이종접합 IR 영역 광검출기 개발)

  • Park, Wang-Hee;Kim, Joondong;Choi, In-Hyuk
    • Journal of the Korean Institute of Electrical and Electronic Material Engineers
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    • v.30 no.8
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    • pp.525-529
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    • 2017
  • Molybdenum oxide ($MoO_3$) offers pivotal advantages for high optical transparency and low light reflection. Considering device fabrication, n-type $MoO_3$ semiconductor can spontaneously establish a junction with p-type Si. Since the energy bandgap of Si is 1.12 eV, a maximum photon wavelength of around 1,100 nm is required to initiate effective photoelectric reaction. However, the utilization of infrared photons is very limited for Si photonics. Hence, to enhance the Si photoelectric devices, we applied the wide energy bandgap $MoO_3$ (3.7 eV) top-layer onto Si. Using a large-scale production method, a wafer-scale $MoO_3$ device was fabricated with a highly crystalline structure. The $MoO_3/p-Si$ heterojunction device provides distinct photoresponses for long wavelength photons at 900 nm and 1,100 nm with extremely fast response times: rise time of 65.69 ms and fall time of 71.82 ms. We demonstrate the high-performing $MoO_3/p-Si$ infrared photodetector and provide a design scheme for the extension of Si for the utilization of long-wavelength light.

GaN 위에 electron beam evaporator로 증착시킨 ITO contactd의 구조적 특성 및 전기적 특성 평가

  • 김동우;성연준;이재원;박용조;김태일;김현수;염근영
    • Proceedings of the Korean Vacuum Society Conference
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    • 2000.02a
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    • pp.33-33
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    • 2000
  • 일반적으로 GaN-based light emitting diodes(LEDs)는 Top layer위에 금속박막으로 contact을 형성하고 있으며 광소자 구성에 있어 빛은 이러한 금속 contact을 통과할 수 없다. 그러나 만약 이러한 contact이 투명전도막으로 구성될 수 있다면 보다 효율적인 광소자의 구성이 기대되어진다. 특히 GaN photodetector, GaN-based LEDs, GaN vertical cavity surface emitting lasers(VCSELs)등의 소자형성에 있어 투명전도막 contact은 매우 중요하며 그 응용에 앞서 기본적인 구조적, 전기적, 광학적 특성에 대한 연구가 반드시 선행되어져야 한다. 따라서 본 실험에서는 이러한 투명전도막으로써 Indium Tin Oxide(ITO)를 사용하였으며 박막형태의 contact으로 제조하여 n-GaN, p-GaN와 corning glass위에 e-beam evaporation법로써 제조하였다. 또한 각 n-, p-type과 corning glass위에 증착된 ITO박막의 구조적 특성을 분석하기 위하여 x-ray diffractometry(XRD)와 Auger electron spectroscopy(AES)등을 사용하였으며 전기적 특성을 측정하기 위하여 four point probe를 사용하였고 그들의 I-V 곡선을 측정하였다. 또한 UV spectrometry를 사용하여 그들의 광학적 특성을 측정하고자 하였다. ITO 박막의 제조에 있어 기판은 초음파 유기세정 후 HCl과 H2O2(1:1)의 혼합용액을 사용하여 GaO2를 제거하고자 하였으며 이후 초순수로 세척하여 사용하였다. 초기 진공도는 3$\times$10-5 Torr이하였으며 기판온도 50$0^{\circ}C$에서 0.6 /s의 증착속도로 약 2000 증착하였다. 이렇게 제조된 ITO 박막은 5$\times$10-5 Torr이하의 진공분위기에서 $600^{\circ}C$로 열처리를 실시하였으며 열처리 시간의 변화에 따른 그들의 전기적, 구조적, 광학적 특성을 측정하였다. 열처리 과정을 통한 ITO박막은 투과도는 420nm의 영역에서 80%이상을 나타내었으며 이때의 면저항은 약 50ohm/ 이었다. 또한 I-V 곡선 측정에 의한 contact특성의 측정결과 열처리 전의 ITO contact은 n-GaN와 n-GaN에 대해 각각 ohmic과 schottky contact의 일반적인 contact 특성을 나타내었다. 그러나 이러한 contact 특성은 열처리 시간의 변화에 따라 변화하는 것을 확인할 수 있었다.

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Dielectric properties of ${Ta_2}{O_5}$ thin film capacitor with $SnO_2$ thin film underlayer ($SnO_2$ 박막을 이용한 ${Ta_2}{O_5}$박막 커패시터의유전특성)

  • Kim, Jin-Seok;Jeong, Gang-Min;Lee, Mun-Hui
    • Korean Journal of Materials Research
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    • v.4 no.7
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    • pp.759-766
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    • 1994
  • Our investigation aimed to reduce the leakage current of $Ta_2O_5$ thin film capacitor by layering SnOz thin film layer under Ta thin film, thereby supplying extra oxygen ions from the $SnO_{2}$ underlayer to enhance the stoichiometry of $Ta_2O_5$ during the oxidation of Ta thin film. Tantalum was evaporated by e-beam or sputtered on p-Si wafers with various deposition temperatures and was oxidized by dry--oxygen at the temperatures between $500^{\circ}C$ and $900^{\circ}C$. Aluminum top and bottom electrodes were formed to make Al/$Ta_2O_5$/p-Si/Al or $Al/Ta_2O_5/SnO_2$p-Si/AI MIS type capacitors. LCR meter and pico-ammeter were used to measure the dielectric constants and leakage currents of the prepared thm film capacitors. XRD, AES and ESCA were employed to confirm the crystallization of the thin f~lm and the compositions of the films. Dielectric constant of $Ta_2O_5$ thin film capacitor with $SnO_{2}$ underlayer was found to be about 200, which is about 10 times higher than that of $Ta_2O_5$ thin film capacitor without $SnO_{2}$ underlayer. In addition, higher oxidation temperatures increased the dielectric constants and reduced the leakage current. Higher deposition temperature generally gave lower leakage current. $Ta_2O_5/SnO_2$ capacitor deposited at $200^{\circ}C$ and oxidized at $800^{\circ}C$ showed significantly lower leakage current, $10^{-7}A/\textrm{cm}^2$ at $4 \times 10^{5}$V/cm, compared to the one without $SnO_{2}$ underlayer. XRD showed that $Ta_2O_5$ thin film was crystallized above $700^{\circ}C$. AES and ESCA showed that initially the $SnO_{2}$, underlayer supplied oxygen ions to oxidize the Ta layer, however, Sn also diffused into the Ta thin film layer to form a new $Ta_xSn_YO_Z$ , ternary oxide layer after all.

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Nano-size Study of Surface-modified Ag Anode for OLEDs (표면처리에 의한 유기발광소자(OLED)용 Ag 전극의 Nano-size 효과 연구)

  • Kim, Joo-Young;Kim, Soo-In;Lee, Kyu-Young;Kim, Hyeong-Keun;Jun, Jae-Hyeok;Jeong, Yun-Jong;Kim, Mu-Chan;Lee, Jong-Rim;Lee, Chang-Woo
    • Journal of the Korean Vacuum Society
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    • v.21 no.1
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    • pp.12-16
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    • 2012
  • Although silver is used for T-OLED (Top emitting organic Light-Emitting Diode) as reflective anode, it is not an ideal material due to its low work function. Thus, we study the effect of annealing and atmospheric pressure plasma treatment on Ag film that increases its work function by forming the thin silver oxide layer on its surface. In this study, we deposited silver on glass substrate using RF sputtering. Then we treated the Ag samples annealing at $300^{\circ}C$ for 30 minutes in atmosphere or treating the atmospheric plasma treatment for 30, 60, 90, 120s, respectively. We measured the change of the mechanical properties and the potential value of surface with each one at a different treatment type and time. We used nano-indenter system and KPFM (Kelvin Probe Force Microscopy). KPFM method can be measured the change of surface potential. The nanoindenter results showed that the plasma treatment samples for 30s, 120s had very low elastic modulus, hardness and Weibull modulus. However, annealed sample and plasma treated samples for 60s and 90s had better mechanical properties. Therefore, plasma treatment increases the uniformity thin film and the surface potential that is very effective for the performace of T-OLED.

Efficiency Improvement in InGaN-Based Solar Cells by Indium Tin Oxide Nano Dots Covered with ITO Films

  • Seo, Dong-Ju;Choi, Sang-Bae;Kang, Chang-Mo;Seo, Tae Hoon;Suh, Eun-Kyung;Lee, Dong-Seon
    • Proceedings of the Korean Vacuum Society Conference
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    • 2013.02a
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    • pp.345-346
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    • 2013
  • InGaN material is being studied increasingly as a prospective material for solar cells. One of the merits for solar cell applications is that the band gap energy can be engineered from 0.7 eV for InN to 3.4 eV for GaN by varying of indium composition, which covers almost of solar spectrum from UV to IR. It is essential for better cell efficiency to improve not only the crystalline quality of the epitaxial layers but also fabrication of the solar cells. Fabrication includes transparent top electrodes and surface texturing which will improve the carrier extraction. Surface texturing is one of the most employed methods to enhance the extraction efficiency in LED fabrication and can be formed on a p-GaN surface, on an N-face of GaN, and even on an indium tin oxide (ITO) layer. Surface texturing method has also been adopted in InGaN-based solar cells and proved to enhance the efficiency. Since the texturing by direct etching of p-GaN, however, was known to induce the damage and result in degraded electrical properties, texturing has been studied widely on ITO layers. However, it is important to optimize the ITO thickness in Solar Cells applications since the reflectance is fluctuated by ITO thickness variation resulting in reduced light extraction at target wavelength. ITO texturing made by wet etching or dry etching was also revealed to increased series resistance in ITO film. In this work, we report a new way of texturing by deposition of thickness-optimized ITO films on ITO nano dots, which can further reduce the reflectance as well as electrical degradation originated from the ITO etching process.

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Characteristics of Low Dielectric Constant SiOF Thin Films with Post Plasma Treatment Time (플라즈마 후처리 시간에 따른 저유전율 SiOF 박막의 특성)

  • Lee, Seok Hyeong;Park, Jong Wan
    • Journal of the Korean Vacuum Society
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    • v.7 no.3
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    • pp.267-267
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    • 1998
  • The fluorine doped silicon oxide (SiOF) intermetal dielectric (IMD) films have been of interest due to their lower dielectric constant and compatibility with existing process tools. However instability issues related to bond and increasing dielectric constant to water absorption when the SiOF films was exposured to atmospheric ambient. Therefore, the purpose of this research is to study the effect of post oxygen plasma treatment on the resistance of moisture absorption and reliability of SiOF film. Improvement of moisture absorption resistance of SiOF film is due to the forming of thin SiO₂layer at the SiOF film surface. It is thought that the main effect of the improvement of moisture absorption resistance was densification of the top layer and reduction in the number of Si-F bonds that tend to associate with OH bonds. However, the dielectric constant was increased when plasma treatment time is above 5 min. In this study, therefore, it is thought that the proper plasma treatment time is 3 min when plasma treatment condition is 700 W of microwave power, 3 mTorr of process pressure and 300℃ of substrate temperature.

Evaluation of Defects of Thermal Barrier Coatings by Thermal Shock Test Using Eddy Current Testing (열차폐 코팅층의 고온 열충격 시험후 ECT를 이용한 결함 평가)

  • Heo, Tae-Hoon;Cho, Youn-Ho;Lee, Joon-Hyun;Oh, Jeong-Seok;Lee, Koo-Hyun
    • Journal of the Korean Society for Nondestructive Testing
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    • v.29 no.5
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    • pp.450-457
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    • 2009
  • Periodical thermal shock can introduce defects in thermal barrier coating made by layers of CoNiCrAlY bond coating(BC) and $ZrO_2-8wt%Y_2O_3$ ceramic top coating(TC) on Inconel-738 substrate using plasma spraying. Thermal shock test is performed by severe condition that is to heat until $1000^{\circ}C$ and cool until $20^{\circ}C$. As the number of cycle is increased, the fatigue by thermal shock is also increased. After test, the micro-structures and mechanical characteristics of thermal barrier coating were investigated by SEM, XRD. The TGO layer of $Al_2O_3$ is formed between BC and TC by periodical thermal shock test, and its change in thickness is inspected by eddy current test(ECT). By ECT test, it is shown that TGO and micro-crack can be detected and it is possible to predict the life of thermal barrier coating.

A Study on the Surface Roughness and Initial Stability of Various Dental Implants (수종 임플랜트의 표면 거칠기와 초기안정성에 관한 연구)

  • Cho, Dong-Hoon;Lim, Ju-Hwan
    • Journal of Dental Rehabilitation and Applied Science
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    • v.16 no.3
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    • pp.197-210
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    • 2000
  • Surface roughness is one of implant surface topography and it's found that surface roughness characterizations, such as surface energy, oxide layer thickness and its chemical composition, are closely correlated if the roughness is changed. Several studies showed the importance of analyzing surface structure so the surface structure of thread implant was analyzed to measure the implant quality exactly. In this study, surface roughness of 4 implants - MK $II^{(R)}$(Nobel Biocare), $RBM^{(R)}$(Life-Core, USA), $Osseotite^{(R)}$(3i, USA), $TPS^{(R)}$(Life-Core, USA) - were measured using $Accura^{(R)}$ and 40 implants were installed into 4 sets of ten bovine ribs based on the parameters from the measurements. From this test, the following conclusions for the initial stability were drawn by measuring and comparing RFA, Periotest Value (PTV), Removal Torgue Value (RTV). 1. $R_a$ value in surface roughness measurement was increasing by the order of $MKII^{(R)}$, $Osseotite^{(R)}$, $RBM^{(R)}$, $TPS^{(R)}$ and $R_q$ value was the same order. 2. $R_q$ value in each section was observed to increase by the order of $MKII^{(R)}$, $Osseotite^{(R)}$, $RBM^{(R)}$, $TPS^{(R)}$ in top and $MKII^{(R)}$, $RBM^{(R)}$, $Osseotite^{(R)}$, $TPS^{(R)}$ in mid-section but the value of $MKII^{(R)}$ bottom was the lowest, followed by $Osseotite^{(R)}$, $RBM^{(R)}$ and $TPS^{(R)}$. 3. RFA increased by the order of $RBM^{(R)}$(7042Hz), $MKII^{(R)}$(7047Hz), $Osseotite^{(R)}$(7076Hz), $TPS^{(R)}$(7168Hz) and there was no significance between each group. 4. PTV was increasing by the order of $MKII^{(R)}$(-1.62), $TPS^{(R)}$(-1.92), $Osseotite^{(R)}$ & $RBM^{(R)}$(-2.08) and there was no significance, either. 5. Removal torque in RTV measurement showed the increasing order of $MKII^{(R)}(5.31kgf{\cdot}cm)$, $Oeeotite^{(R)}(5.71kgf{\cdot}cm)$, $TPS^{(R)}(5.92kgf{\cdot}cm)$ and $RBM^{(R)}(7.24kgf{\cdot}cm)$ and there was no significance among groups. Above observations explains that surface roughness does not make any impact on the initial stability of implants installation.

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Hydrogeochemical Research on the Characteristic of Chemical Weathering in a Granitic Gatchment (水文化學的 資料를 통한 花崗岩質 流域의 化學的 風化特性에 關한 硏究)

  • Park, Soo-Jin
    • Journal of the Korean Geographical Society
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    • v.28 no.1
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    • pp.1-15
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    • 1993
  • This research aims to investigate some respects of chemical weathering processes, espcially the amount of solute leaching, formation of clay minerals, and the chemical weathering rate of granite rocks under present climatic conditions. For this purpose, I investigated geochemical mass balance in a small catchment and the mineralogical composition of weathered bedrocks including clay mineral assemblages at four res-pective sites along one slope. The geochemical mass blance for major elements of rock forming minerals was calculated from precipitation and streamwater data which are measured every week for one year. The study area is a climatically and litholo-gically homogeneous small catchment($3.62Km^2$)in Anyang-shi, Kyounggi-do, Korea. The be-drock of this area id Anyang Granite which is composed of coarse-giained, pink-colored miner-als. Main rock forming minerals are quartz, K-Feldspar, albite, and muscovite. One of the chracteristics of this granite rock is that its amount of Ca and Mg is much lower than other granite rock. The leaching pattern in the weathering profiles is in close reltion to the geochemical mass balance. Therefore the removal or accumulation of dissolved materials shows weathering patterns of granite in the Korean peninsula. Oversupplied ions into the drainage basin were $H^+$, $K^+$, Fe, and Mn, whereas $Na^2+$, $Mg^2+$, $Ca^2+$, Si, Al and $HCO-3^{-}$ were removed from the basin by the stream. The consumption of hydrogen ion in the catchment implies the hydrolysis of minerals. The surplus of $K^+$ reflects that vegetation is in the aggravation stage, and the nutrient cycle of the forest in study area did not reach a stable state. And it can be also presumed that the accumulation of $K^+$ in the top soil is related to the surplus of $K^+$. Oversupplied Fe and Mn were presumed to accumulate in soil by forming metallic oxide and hydroxide. In the opposite, the removal of $Na^+$, Si, Al resulted from the chemical weathering of albite and biotite, and the amount of removal of $Na^+$, Si, Al reflected the weathering rate of the bedrock. But $Ca^2+$ and $Mg^2+$ in stream water were contaminated by the scattered calcareous structures over the surface. Kaolinite is a stable clay mineral under the present environment by the thermodynamical analysis of the hydrogeochemical data and Tardy's Re value. But this result was quite different from the real assemblage of clay miner-als in soil and weathered bedrock. This differ-ence can be explained by the microenvironment in the weathering profile and the seasonal variation of climatic factors. There are different clay forming environments in the stydy area and these differences originate from the seasonal variation of climate, especially the flushing rate in the weathering profile. As it can be known from the results of the analysis of thermodynamic stability and characteristics of geochemical mas balance, the climate during winter and fall, when it is characterized by the low flushing rate and high solute influx, shows the environmental characteristics to from 2:1 clay minerals, such as illite, smectite, vermiculite and mixed layer clay minerals which are formed by neoformation or transformation from the primary or secondary minerals. During the summer and spring periods, kaoli-nite is a stable forming mineral. However it should consider that the other clay minerals can transformed into kaolinite or other clay minerals, because these periods have a high flushing rte and temperature. Materials which are directly regulated by chemical weathering in the weathered bedrock are $Na^+$, Si, and Al. The leaching of Al is, however, highly restricted and used to form a clay mineral, and that of Si falls under the same category. $Na^+$ is not taked up by growing veget ation, and fixed in the weathering profile by forming secondary minerals. Therefore the budget of $Na^+$ is a good indicator for the chemical weathering rate in the study area. The amount of chemical weathering of granite rocks was about 31.31g/$m^2+$/year based on $Na^+$ estimation.

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