• Title/Summary/Keyword: Titanium doping

Search Result 58, Processing Time 0.035 seconds

Enhancement of high temperature cycling stability in high-nickel cathode materials with titanium doping

  • Song, Jun-Ho;Bae, Joongho;Lee, Ko-woon;Lee, Ilbok;Hwang, Keebum;Cho, Woosuk;Hahn, Sang June;Yoon, Songhun
    • Journal of Industrial and Engineering Chemistry
    • /
    • v.68
    • /
    • pp.124-128
    • /
    • 2018
  • Titanium doping is employed to enhance the structural strength of a high-Ni layered cathode material in lithium ion batteries during high temperature cycling. After Ti-doping, the external morphology remains similar, but the lattice parameters of the layered structure are slightly shifted toward larger values. With application of the prepared materials as cathodes in lithium-ion batteries, the initial capacities are similar but the cycling performance at $25^{\circ}C$ is enhanced by Ti-doping. During high temperature cycling at $60^{\circ}C$, furthermore, highly improved capacity retention is achieved with the Ti-doped material (95% of initial capacity at 50th cycles), while cycle fading is accelerated with the bare electrode. This enhancement is attributed to better retention of the compressive strength of the particles and retarded crack formation within the particles. In addition, impedance increase is reduced in the Ti-doped electrode, which is attributed to an improvement in the structural strength of the high-Ni cathode material with Ti-doping.

Effect of Nitrogen, Titanium, and Yttrium Doping on High-K Materials as Charge Storage Layer

  • Cui, Ziyang;Xin, Dongxu;Park, Jinsu;Kim, Jaemin;Agrawal, Khushabu;Cho, Eun-Chel;Yi, Junsin
    • Journal of the Korean Institute of Electrical and Electronic Material Engineers
    • /
    • v.33 no.6
    • /
    • pp.445-449
    • /
    • 2020
  • Non-volatile memory is approaching its fundamental limits with the Si3N4 storage layer, necessitating the use of alternative materials to achieve a higher programming/erasing speed, larger storage window, and better data retention at lower operating voltage. This limitation has restricted the development of the charge-trap memory, but can be addressed by using high-k dielectrics. The paper reviews the doping of nitrogen, titanium, and yttrium on high-k dielectrics as a storage layer by comparing MONOS devices with different storage layers. The results show that nitrogen doping increases the storage window of the Gd2O3 storage layer and improves its charge retention. Titanium doping can increase the charge capture rate of HfO2 storage layer. Yttrium doping increases the storage window of the BaTiO3 storage layer and improves its fatigue characteristics. Parameters such as the dielectric constant, leakage current, and speed of the memory device can be controlled by maintaining a suitable amount of external impurities in the device.

Carbon Doping of TiO2 for Visible Light Photo Catalysis - A review

  • Palanivelu, K.;Im, Ji-Sun;Lee, Young-Seak
    • Carbon letters
    • /
    • v.8 no.3
    • /
    • pp.214-224
    • /
    • 2007
  • The field of photocatalysis is one of the fastest growing areas both in research and commercial fields. Titanium dioxide is the most investigated semi-conductor material for the photocatalysis applications. Research to achieve $TiO_2$ visible light activation has drawn enormous attentions because of its potential to use solar light. This paper reviews the attempts made to extend its visible photocatalytic activity by carbon doping. Various approaches adopted to incorporate carbon to $TiO_2$ are summarized highlighting the major developments in this active research field. Theoretical features on carbon doping are also presented. Future scenario in the rapidly developing and exciting area is outlined for practical applications with solar light.

Magnetic and Electronic Properties of Reduced Rutile Ti1-xMnxO2-δ Thin Films

  • Kim, Kwang-Joo;Park, Young-Ran;Ahn, Geun-Young;Kim, Chul-Sung
    • Journal of Magnetics
    • /
    • v.11 no.1
    • /
    • pp.12-15
    • /
    • 2006
  • Magnetic and electronic properties of reduced rutile titanium dioxide $(TiO_{2-\delta})$ thin films doped by Mn have been investigated. The present sol-gel-grown semiconducting $TiO_{2-\delta}:Mn$ films exhibit a ferromagnetic behavior at room temperature for a limited range of Mn content. The Mn-doped films have p-type electrical conductivity with the carrier concentration near $10^{19}\;cm^{-3}$. The observed room-temperature ferromagnetism is believed to be intrinsic but not related to free carriers such as holes. Oxygen vacancies are likely to contribute to the room-temperature ferromagnetism-trapped carriers in oxygen vacancies can mediate a ferromagnetic coupling between neighboring $Mn^{+3}$ ions. The energy band-gap change due to the Mn doping measured by spectroscopic ellipsometry exhibits a red-shift compared to that of the undoped sample at low Mn content. It is explainable in terms of strong spin-exchange interactions between Mn ion and the carrier.

High-Temperature Oxidation of Ti Containing Stainless Steel in O2-N2 Atmosphere

  • Onishi, Hidenori;Saeki, Isao;Furuichi, Ryusaburo;Okayama, Toru;Hanamatsu, Kenko;Shibayama, Tamaki;Takahashi, Heishichiro;Kikkawa, Shinichi
    • Corrosion Science and Technology
    • /
    • v.3 no.4
    • /
    • pp.140-147
    • /
    • 2004
  • High temperature oxidation of Fe-19Cr and Fe-19Cr-0.2Ti alloys is studied at 1173-1373 K in 16.5 kPa $O_2$ - balances $N_2$ atmosphere aimed at clarifying the effect of titanium addition. Oxidation rate of Fe-19Cr alloy was accelerated with titanium. For both alloys chromium rich $(Fe,\;Cr)_2O_3$ was formed as a major oxidation product. On Fe-19Cr-0.2Ti alloy, a thin layer composed of spinel type oxide and titanium oxide was also formed and an internal oxidation of titanium was observed. Titanium was concentrated at the oxide surface and internal oxidation zone but a small amount of titanium was also found in the intermediate corundum type $(Fe,\;Cr)_2O_3$ layer. Crystals of corundum type $(Fe,\;Cr)_2O_3$ formed on Fe-19Cr alloy are coarse but that formed on Fe-19Cr -0.2Ti alloys were fine and columnar. Reason for the difference in oxidation kinetics and crystal structure will be discussed relating to the distribution of aliovalent titanium in corundum type $(Fe,\;Cr)_2O_3$ oxide layer.

Effects of metal contacts and doping for high-performance field-effect transistor based on tungsten diselenide (WSe2)

  • Jo, Seo-Hyeon;Park, Jin-Hong
    • Proceedings of the Korean Vacuum Society Conference
    • /
    • 2016.02a
    • /
    • pp.294.1-294.1
    • /
    • 2016
  • Transition metal dichalcogenides (TMDs) with two-dimensional layered structure, such as molybdenum disulfide (MoS2) and tungsten diselenide (WSe2), are considered attractive materials for future semiconductor devices due to its relatively superior electrical, optical, and mechanical properties. Their excellent scalability down to a monolayer based on the van der Waals layered structure without surface dangling bonds makes semiconductor devices based on TMD free from short channel effect. In comparison to the widely studied transistor based on MoS2, researchs focusing on WSe2 transistor are still limited. WSe2 is more resistant to oxidation in humid ambient condition and relatively air-stable than sulphides such as MoS2. These properties of WSe2 provide potential to fabricate high-performance filed-effect transistor if outstanding electronic characteristics can be achieved by suitable metal contacts and doping phenomenon. Here, we demonstrate the effect of two different metal contacts (titanium and platinum) in field-effect transistor based on WSe2, which regulate electronic characteristics of device by controlling the effective barreier height of the metal-semiconductor junction. Electronic properties of WSe2 transistor were systematically investigated through monitoring of threshold voltage shift, carrier concentration difference, on-current ratio, and field-effect mobility ratio with two different metal contacts. Additionally, performance of transistor based on WSe2 is further enhanced through reliable and controllable n-type doping method of WSe2 by triphenylphosphine (PPh3), which activates the doping phenomenon by thermal annealing process and adjust the doping level by controlling the doping concentration of PPh3. The doping level is controlled in the non-degenerate regime, where performance parameters of PPh3 doped WSe2 transistor can be optimized.

  • PDF

Photocatalysis of Low Concentration of Gaseous-Phase Benzene Using Visible-Light Irradiated N-doped and S-doped Titanium Dioxide

  • Jo, Wan-Kuen;Kim, Jong-Tae
    • Environmental Engineering Research
    • /
    • v.13 no.4
    • /
    • pp.171-176
    • /
    • 2008
  • Studies on visible-light-driven photocatalysis of air pollutants at indoor air quality (IAQ) levels have been limited. Current study investigated visible-light derived photocatalysis with N-doped and S-doped titanium dioxide ($TiO_2$) for the control of benzene at indoor levels. Two preparation processes were employed for each of the two types of photocatalyst: urea-Degussa P-25 $TiO_2$ and titania-colloid methods for the N-doped $TiO_2$; and titanium isopropoxid- and tetraisopropoxide-thiourea methods for the S-doped $TiO_2$. Furthermore, two coating methods (EDTA- and acetylacetone-dissolving methods) were tested for both the N-doped and S-doped $TiO_2$. The two coating methods exhibited different photocatalytic degradation efficiency for the N-doped photocatalysts, whereas they did not exhibit any difference for the S-doped photocatalysts. In addition, the two doping processes showed different photocatalytic degradation efficiency for both the S-doped and N-doped photocatalysts. For both the N-doped and S-doped $TiO_2$, the photocatalytic oxidation (PCO) efficiency increased as the hydraulic diameter (HD) decreased. The degradation efficiency determined via a PCO system with visible-light induced $TiO_2$ was lower than that with UV-light induced unmodified $TiO_2$, which was obtained from previous studies. Nevertheless, it is noteworthy that for the photocatalytic annular reactor with the HD of 0.5 cm, PCO efficiency increased up to 52% for the N-doped $TiO_2$ and 60% for the S-doped $TiO_2$. Consequently, when combined with the advantage of visible light use over UV light use, it is suggested that with appropriate HD conditions, the visible-light-assisted photocatalytic systems can also become an important tool for improving IAQ.

Characteristics of metal contact for silicon solar cells (실리콘 태양전지의 금속전극 특성)

  • Cho, Eun-Chel;Kim, Dong-Seop;Min, Yo-Sep;Cho, Young-Hyun;Ebong, A.U.;Lee, Soo-Hong
    • Solar Energy
    • /
    • v.17 no.1
    • /
    • pp.59-66
    • /
    • 1997
  • The solar cell electrical output parameters such as the open circuit voltage($V_{oc}$) and short circuit current density($V_{sc}$) are intrinsic characteristics depending on junction depth, doping concentration, metal contacts barriers and cell structure. As a role of thumb for solar cell design, the metal contact barriers for phosphorus doped emitter should have lower work function in order to provide lower series resistance. The fabrication of PESC(passivated emitter solar cell) structure usually involves the use of titanium as a metal contact barrier. Chromium, which work function is similar to titanium but conductance is higher than titanium is being investigated as the new metal contact barrier. Although titanium has lower work function difference than chromium, the electric performances of chromium as contact barrier are higher than titanium. This better performance is attributed to the lower resistivity from chromium. This paper, therefore, compares the attributes of metal barrier contacts using titanium and chromium.

  • PDF

Pt-and $TiO_2-doped\; Nb_2O_5$ Thin Film by Ion-Beam-Enhanced Deposition

  • Zhu, Jianzhong;Ren, Congxin
    • Journal of the Korean Vacuum Society
    • /
    • v.7 no.s1
    • /
    • pp.100-105
    • /
    • 1998
  • This paper describes the preparation of Pt-and $TiO_2$-doped $Nb_2O_5$ thin film by Ion-Beam-Enhanced Deposition. Platinum and titanium doping, and Nb2O5 deposition were carried out in situ. The dependence of oxygen sensing properties on the amounts of Pt and Ti dopant in the $Nb_2O_5$ film was investigated. There were the highist sensitivity, the lowest temperature coefficient and the shortest responce time at doping of 5 mol% $TiO_2$ and 0.3 mol%Pt

  • PDF

Photocatalytic Degradation Characteristics of Organic Compound by Boron-doped TiO2 Catalysts

  • Nam, Chang-Mo
    • Journal of Korean Society for Atmospheric Environment
    • /
    • v.26 no.6
    • /
    • pp.649-656
    • /
    • 2010
  • Boron-doped $TiO_2$ photocatalysts were synthesized by a modified sol-gel method and their photocatalytic activities were performed and compared with those of pure synthetic and commercial $TiO_2$ catalysts under UV or visible light conditions. Pure $TiO_2$ itself exhibited very negligible photocatalytic performance under visible light conditions in the aspects of toluene decomposition reactions, although significant decomposition potential was observed as expected with UV light conditions. However, boron doping over $TiO_2$ significantly improved photocatalytic activity particularly under visible conditions, where over 95% degradation of toluene was achieved with 1wt% $B-TiO_2$ within 2 hrs. All the decomposition reactions seemed to follow pseudo first-order kinetics. The effects of boron-doping and its characteristics are further discussed through the kinetic studies and comparison of results.