• 제목/요약/키워드: Tin oxide

검색결과 1,382건 처리시간 0.034초

초음파 분무 열분해 증착 중 기판 회전 속도에 따른 플루오린 도핑 된 주석산화물 막의 전기적 및 광학적 특성 (Electrical and Optical Properties of Fluorine-Doped Tin Oxide Films Fabricated at Different Substrate Rotating Speeds during Ultrasonic Spray Pyrolysis Deposition)

  • 이기원;조명훈;안효진
    • 한국재료학회지
    • /
    • 제34권1호
    • /
    • pp.55-62
    • /
    • 2024
  • Fluorine-doped tin oxide (FTO) has been used as a representative transparent conductive oxide (TCO) in various optoelectronic applications, including light emitting diodes, solar cells, photo-detectors, and electrochromic devices. The FTO plays an important role in providing electron transfer between active layers and external circuits while maintaining high transmittance in the devices. Herein, we report the effects of substrate rotation speed on the electrical and optical properties of FTO films during ultrasonic spray pyrolysis deposition (USPD). The substrate rotation speeds were adjusted to 2, 6, 10, and 14 rpm. As the substrate rotation speed increased from 2 to 14 rpm, the FTO films exhibited different film morphologies, including crystallite size, surface roughness, crystal texture, and film thickness. This FTO film engineering can be attributed to the variable nucleation and growth behaviors of FTO crystallites according to substrate rotation speeds during USPD. Among the FTO films with different substrate rotation speeds, the FTO film fabricated at 6 rpm showed the best optimized TCO characteristics when considering both electrical (sheet resistance of 13.73 Ω/□) and optical (average transmittance of 86.76 % at 400~700 nm) properties with a figure of merit (0.018 Ω-1).

스테인리스강 금속 표면에 내열 저방사 산화물 코팅제 적용과 방사 특성 평가 (Heat Resistant Low Emissivity Oxide Coating on Stainless Steel Metal Surface and Characterization of Emissivity)

  • 임형미;권태일;김대성;이상엽;강동필;이승호
    • 한국재료학회지
    • /
    • 제19권12호
    • /
    • pp.649-656
    • /
    • 2009
  • Inorganic oxide colloids dispersed in alcohol were applied to a stainless steel substrate to produce oxide coatings for the purpose of minimizing emissive thermal transfer. The microstructure, roughness, infrared emissive energy, and surface heat loss of the coated substrate were observed with a variation of the nano oxide sol and coating method. It was found that the indium tin oxide, antimony tin oxide, magnesium oxide, silica, titania sol coatings may reduce surface heat loss of the stainless steel at 300${\circ}C$. It was possible to suppress thermal oxidation of the substrate with the oxide sol coatings during an accelerated thermal durability test at 600${\circ}C$. The silica sol coating was most effective to suppress thermal oxidation at 600${\circ}C$, so that it is useful to prevent the increase of radiative surface heat loss as a heating element. Therefore, the inorganic oxide sol coatings may be applied to improve energy efficiency of the substrate as the heating element.

Optically transparent and electrically conductive indium-tin-oxide nanowires for transparent photodetectors

  • Kim, Hyunki;Park, Wanghee;Ban, Dongkyun;Kim, Hong-Sik;Patel, Malkeshkumar;Yadav, Pankaj;Kim, Joondong
    • 한국진공학회:학술대회논문집
    • /
    • 한국진공학회 2016년도 제50회 동계 정기학술대회 초록집
    • /
    • pp.390.2-390.2
    • /
    • 2016
  • Single crystalline indium-tin-oxide (ITO) nanowires (NWs) were grown by sputtering method. A thin Ni film of 5 nm was coated before ITO sputtering. Thermal treatment forms Ni nanoparticles, which act as templates to diffuse Ni into the sputtered ITO layer to grow single crystalline ITO NWs. Highly optical transparent photoelectric devices were realized by using a transparent metal-oxide semiconductor heterojunction by combining of p-type NiO and n-type ZnO. A functional template of ITO nanowires was applied to this transparent heterojunction device to enlarge the light-reactive surface. The ITO NWs/n-ZnO/p-NiO heterojunction device provided a significant high rectification ratio of 275 with a considerably low reverse saturation current of 0.2 nA. The optical transparency was about 80% for visible wavelengths, however showed an excellent blocking UV light. The nanostructured transparent heterojunction devices were applied for UV photodetectors to show ultra fast photoresponses with a rise time of 8.3 mS and a fall time of 20 ms, respectively. We suggest this transparent and super-performing UV responser can practically applied in transparent electronics and smart window applications.

  • PDF

Feasibility of Indium Tin Oxide (ITO) Swarf Particles to Transparent Conductive Oxide (TCO)

  • Hong, Sung-Jei;Yang, DuckJoo;Cha, Seung Jae;Lee, Jae-Yong;Han, Jeong-In
    • Current Photovoltaic Research
    • /
    • 제3권2호
    • /
    • pp.50-53
    • /
    • 2015
  • Indium (In) is widely used for transparent electrodes of photovoltaics as a form of indium tin oxide (ITO) due to its superior characteristics of environmental stability, relatively low electrical resistivity and high transparency to visible light. However, In has been worn off in proportion to growth the In related market, and it leads to raise of price. Although In is obtained from ITO target scarps, much harmful elements are used for the recycling process. To decrease of harmful elements, ITO swarf particles obtained from target scraps was characterized whether it is feasible to transparent conductive oxide (TCO). The ITO swarf was crushed with milling process, and it was mixed with new ITO nanoparticles. The mixed particles were well dispersed into ink solvent to make-up an ink, and it was well coated onto glass substrate. After heat-treatment at $400^{\circ}C$ under $N_2$ rich environments, optical transmittance at 550 nm and sheet resistance of the ITO ink coated layer was 71.6% and $524.67{\Omega}/{\square}$, respectively. Therefore, it was concluded that the ITO swarf was feasible to TCO of touch screen panel.

분무열분해법에 의하여 제조한 FTO 투명전도막의 F/Sn 비율에 따른 전기, 광학적 특성과 XPS 분석 (Electrical and optical properties of FTO transparent conducting oxide film by spray pyrolysis and its XPS analysis based on F/Sn ratio)

  • 송철규;김창열;허승헌;류도형;좌용호
    • 한국재료학회지
    • /
    • 제17권7호
    • /
    • pp.376-381
    • /
    • 2007
  • Fluorine-doped tin oxide (FTO) thin film was coated on aluminosilicate glass at $450^{\circ}C$ by spray pyrolysis method. In the range of 0-2.7 molar ratio of F/Sn, the variations of electrical conductivity and visible light transmission were investigated. At the F/Sn ratio of 1.765, the film showed the lowest electrical resistivity value of $3.0{\times}10^{-4}{\Omega}\;cm$, the highest carrier concentration of $2.404{\times}10^{21}/cm^3$, and about $8\;cm^2/V{\cdot}sec$ of electronic mobility. The FTO film showed a preferred orientation of (200) plane parallel to the substrate. X-ray photoelectron spectroscopy analysis results indicated that the contents of $Sn^{4+}-O$ bonding are the highest at 1.765 of F/Sn molar ratio.

A Level Shifter Using Aluminum-Doped Zinc Tin Oxide Thin Film Transistors with Negative Threshold Voltages

  • Hwang, Tong-Hun;Yang, Ik-Seok;Kim, Kang-Nam;Cho, Doo-Hee;KoPark, Sang-Hee;Hwang, Chi-Sun;Byun, Chun-Won;Kwon, Oh-Kyong
    • 한국정보디스플레이학회:학술대회논문집
    • /
    • 한국정보디스플레이학회 2009년도 9th International Meeting on Information Display
    • /
    • pp.464-465
    • /
    • 2009
  • A new level shifter using n-channel aluminum-doped zinc tin oxide (AZTO) thin film transistors (TFTs) was proposed to integrate driving circuits on qVGA panels for mobile display applications. The circuit used positive feedback loop to overcome limitations of circuits designed with oxide TFTs which is depletion mode n-channel TFTs. The measured results shows that the proposed circuit shifts 10 V input voltage to 20 V output voltage and its power consumption is 0.46 mW when the supply voltage is 20 V and the operating frequency is 10 kHz.

  • PDF

DC 마그네트론 스퍼터를 이용한 ITO 투명도전막 특성 (Characteristics of ITO Transparent Conductive Oxide by DC Magnetron Sputter Methode)

  • 조기택;최현;양승호
    • 한국전기전자재료학회:학술대회논문집
    • /
    • 한국전기전자재료학회 2007년도 하계학술대회 논문집 Vol.8
    • /
    • pp.269-269
    • /
    • 2007
  • 최근 평판디스플레이 산업이 성장함에 따라 품질향상을 위한 연구가 활발히 진행중이며 또한, 부품 소재 개발에 박차를 가하고 있다. 대형 평판디스플레이 중 낮은 전력소모와 광시야각이 우수한 TFT-LCD가 각광받고 있다. TFT-LCD 소자의 투명전극으로 사용되기 위해서는 면저항 10~1k Ohm/sq., 광투과율 85% 이상의 특성이 요구되며 ITO(Indium Tin Oxide의 약자) 타겟을 스퍼터링한 박막이 일반적으로 사용되고 있다. 본 연구에서는 $In_2O_3$ 나노 분말 제조 공법으로 제작된 ITO 타겟을 사용하여 양산성 및 대형화에 적합한 DC 마그네트론 스퍼터 방식으로 투명전극을 제조하였다. 일반적으로 사용되는 고정식 DC 마그네트론 스퍼터 방식은 타겟표면에 재증착(back deposition)되는 저급산화물로 인해 이물 또는 노즐(Nodule) 이 형성되고 이로 인해 비이상적이고 불안정한 방전 플라즈마가 박막의 특성을 저하시킨다. 이러한 문제점을 해결하기 위해 이동식 DC 마그네트론 스퍼터 방식을 채택하였으며 대형 타겟을 이용한 대형화 기판 제작과 안정적인 sputter yield로 인해 uniformity가 우수한 ITO 박막을 제조하였다. ITO 박막의 저면저항 고투과율 특성을 구현하기 위해 공정변수인 산소분압, 전류밀도(DC power) 그리고 증착온도에 따른 ITO 박막의 미세조직과 결정성을 관찰하였으며 전기적 특성을 분석하였다.

  • PDF

Characterization of substrates using Fluor-doped Tin Oxide and Gallium-doped Zinc Oxide for Dye Sensitized Solar cells

  • 공재석;최윤수;김종열;임기홍;전민현
    • 한국진공학회:학술대회논문집
    • /
    • 한국진공학회 2013년도 제45회 하계 정기학술대회 초록집
    • /
    • pp.318.2-318.2
    • /
    • 2013
  • 기존의 염료감응형 태양전지(Dye Sensitized Solar Cells; DSSCs)는 최대 효율 11~12%의 광전변환효율을 가지고 있다. 이러한 한계를 극복하기 위해서 광흡수 층 최적화, 상대전극의 촉매성 증대, 전해질의 산화 환원 반응 최적화 등의 많은 연구가 이루어지고 있다. 본 연구에서는 DSSCs의 광전변환효율을 증가시키고자 기존의 투명전극 및 기판으로 사용되는 FTO(Fluor-doped Tin Oxide)를 GZO(Gallium-doped Zinc Oxide)를 사용하여 투명전극기판에 따른 계면 저항, 전류손실 등 DSSCs에 미치는 영향을 분석하였다. 본 연구에 사용된 FTO는 ${\sim}7{\Omega}/{\square}$의 면저항과 80%이상의 투과도를 갖고 있으나 Ion-Sputtering 법으로 증착된 GZO는 열처리 과정을 통하여 $3{\sim}4{\Omega}/{\square}$의 면 저항을 나타내고 80%이상의 우수한 투과도를 가지고 있다. 이러한 두 기판의 특성 비교를 위해, UV-Visble Spectrophotometer를 사용하여 광학적 특성을 분석하고, SEM(Scanning Electron Microscope), AFM(Atomic Force Microscope)를 사용하여 표면 특성을 평가하였다. 또한 전기적 특성을 분석하기 위하여 4-Point-probe를 이용하여 면 저항을 측정하였고, DSSCs의 효율 및 Fill Factor를 분석하기 위하여 Solar Simulator의 I-V measurement를 이용하였다.

  • PDF

The Synthesis Method of Tin Dioxide Nanoparticles by Plasma-Assisted Electrolysis Process and Gas Sensing Property

  • Kim, Tae Hyung;Song, Yoseb;Lee, Chan-Gi;Choa, Yong-Ho
    • 한국분말재료학회지
    • /
    • 제24권5호
    • /
    • pp.351-356
    • /
    • 2017
  • Tin dioxide nanoparticles are prepared using a newly developed synthesis method of plasma-assisted electrolysis. A high voltage is applied to the tin metal plate to apply a high pressure and temperature to the synthesized oxide layer on the metal surface, producing nanoparticles in a low concentration of sulfuric acid. The particle size, morphology, and size distribution is controlled by the concentration of electrolytes and frequency of the power supply. The as-prepared powder of tin dioxide nanoparticles is used to fabricate a gas sensor to investigate the potential application. The particle-based gas sensor exhibits a short response and recovery time. There is sensitivity to the reduction gas for the gas flowing at rates of 50, 250, and 500 ppm of $H_2S$ gas.

이산화주석 나노구조물의 성장에서 산소가스 유량이 미치는 영향 (The Influence of Oxygen Gas Flow Rate on Growth of Tin Dioxide Nanostructures)

  • 김종일;김기출
    • 한국산학기술학회논문지
    • /
    • 제19권10호
    • /
    • pp.1-7
    • /
    • 2018
  • 이산화주석은 리튬 이온 전지의 Anode 전극물질, 또는 $H_2$, NO, $NO_2$ 등의 가스 분자가 표면에 흡착되면 전기저항이 변하는 특성을 이용하여 가스센서로 활용되고 있으며, 나노구조를 갖는 이산화주석의 합성과 관련하여 많은 연구가 활발하게 이루어지고 있다. 나노구조물의 경우 Bulk 상태보다 체적 대비 표면적비가 높기 때문에 기체분자의 흡착확률을 높일 수 있으므로 고감도 가스 센서의 구현이 가능하고, Li-ion 이차전지의 경우에도 비정전용량을 향상시킬 수 있다. 본 연구에서는 열화학기상증착 장비를 이용하여 기상수송방법으로 $SnO_2$ 나노구조물을 Si 기판 위에 직접 성장시켰다. 이때 이송가스로 이용되는 고순도 Ar 가스에 고순도 산소가스를 혼합하였고, 산소가스의 혼합량에 따라 다른 형태의 산화주석 나노구조물이 성장되는 것을 확인하였다. 기상수송방법으로 성장된 산화주석 나노구조물의 결정학적 특성은 Raman 분광학 및 XRD 분석을 통하여 확인하였고, 표면형상을 주사전자현미경을 통하여 확인하였다. 분석결과 산화주석 나노구조물은 산소가스 혼합량에 민감하게 영향을 받았으며, 이송가스로 이용되는 고순도 Ar 1000 SCCM에 고순도 산소가스 10 SCCM을 혼합하였을 때, 적당한 두께를 가지면서 Nanodots 형태의 표면형상을 갖는 $SnO_2$ 결정상의 나노구조물이 성장되는 것을 확인하였다.