• 제목/요약/키워드: Tin metal

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Study on the Casting Method and Manufacturing Process of Bronze Bells Excavated from the Hoeamsa Temple Site (회암사지 금탁(琴鐸)의 주조방법과 가공기술 연구)

  • Lee, Jae Sung;Baek, Ji Hye;Jeon, Ik Hwan;Park, Jang Sik
    • Korean Journal of Heritage: History & Science
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    • v.43 no.3
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    • pp.102-121
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    • 2010
  • Three bronze bells excavated from the Hoeamsa temple site were investigated for their microstructures and chemical compositions in an effort to understand the technology applied in fabrication, which may represent the related industry established in the early Joseon period. The result shows that the bells were cast from alloys of approximately 85% copper-8% tin-7% lead. The chemical analysis for ten trace elements shows that they were all kept below 0.3 weight %, suggesting that the alloys were made of relatively well-refined copper, tin and lead. The presence of sulfur and iron indicates that chalcopyrite or chalcocite may have been used in the smelting of copper. Evidence has been found that the bells were cast by pouring the liquid metal from the top of the sand molds that were set up in an upright position. No additional treatments, thermal or mechanical, other than a little grinding were applied upon the completion of casting. After the shaping process, a balancing plate was attached to the top of the bell using a steel connection ring. The connection assembly was then fixed to the main body by using molten bronze as a solder. The surface inscription was found carved using different techniques. The differences in the order of strokes and the calligraphic style indicate that the carving was carried out by more than one master. In the absence of documentary evidence on past bronze technology, the present bronze bells with known chronology, provenance and the main agent of production, prove to be a rare and valuable archaeological material for the understanding of the related technology in use in the early Joseon period.

The Structural and Material Characteristics of Bogjeon Chongtong from the Joseon Dynasty (조선시대 복전총통의 구조와 재료적 특징)

  • Lee Jihyun;Huh Ilkwon;Moon Jieun;Shin Sujung
    • Conservation Science in Museum
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    • v.30
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    • pp.101-126
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    • 2023
  • Bogjeon chongtong, a military firearm from the Joseon Dynasty, remains undocumented with extant ones only discovered relatively recently. This study examined the structural and material characteristics of the bogjeon chongtong by comparing the specifications, shapes, inscriptions, and components of 12 pieces of bogjeon chongtong, which have not been described in detail to date. Bogjeon chongtong has certain set properties in terms of its specifications and shapes. This study also estimated the number of projectiles fired at once by comparing the specifications and records. In terms of design, the handle slot has an outline engraved in relief along with the name of the artifact. The inscribed outline is the most notable feature of the bogjeon chongtong that is not seen in other chongtong artifacts. Therefore, this study analyzed the inscription techniques used in the production process. The main ingredients of bogjeon chongtong are copper and tin, with a tin content of 6wt%. It was confirmed that this is highly similar to the average composition of bronze gunpowder weapons of the Joseon Dynasty as identified in prior research, and that it is also similar to the bronze gunmetal of medieval Europe. These conclusions were drawn in consideration of the material properties required for gunpowder weapons, which allows the inference that the materials used for firearms were selected by prioritizing functionality based on the alloy ratio.

A STUDY ON METAL RELEASE OF TIN ION-PLATED STAINLESS STEEL ORTHODONTIC APPLIANCES (TiN 피막 처리된 스테인레스강 교정용 장치물의 금속 유리에 대한 연구)

  • KIM, Myung-Sook;Sung, Jae-Hyun;Kwon, Oh-Won
    • The korean journal of orthodontics
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    • v.25 no.1 s.48
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    • pp.43-54
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    • 1995
  • This study was conducted to examine the metal release of TiN-plated stainless steel orthodontic appliances by constructing the simulated orthodontic appliances equivalent to maxillary half arch, by dividing into TiN-plated and TiN-nonplated Bloops and by dividing again these groups into welded and nonwelded groups. And then, the total quantity of metal release was obtained by measuring the amounts of both soluble and precipitated nickel and chromium after immersing in artificial saliva for 15 days. And then, the corrosion appearance of surface structure was observed by using SEM. The results of this study were summarized as follows. 1. The total amounts of released nickel and chromium showed that the TiN-plated group after welding(Group 1) was 25.46 ${\mu}g$, respectively, and 17.4 ${\mu}g$, while the TiN-nonplated group after welding(Group III) was 54.69 ${\mu}g$, respectively, and 85.27 ${\mu}g$. Then, the TiN-Plated group indicated less amounts of metal release(p<0.05). 2. The total amounts of the TiN-plated group without welding(Group II) was 0.05${\mu}g$ and 0.34${\mu}g$, respectively. Then, it was shown that the TiN-plated group without welding(Group II) indicated less metal release than that of the TiN-Plated group after welding(Group I)(p<0.01, p<0.05). 3. When observing their surface structure, there were a lot of precipitate and pitting corrosion in the groups with welding(Group I & III), when the TiN-plated group(Group I) showed lower level than the TiN-nonplated group(Group IIII). On the other hand, the groups without welding(Group II & IV) indicated a little of pitting corrosion. 4. In case of observation with the naked eyes, it was shown that there were significant disco1oration and corrosion in the groups with welding(Group I & III), while there was no any remarkable change in the groups without welding(Group II & IV).

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Reaction Gas Composition Dependence on the Properties of SnO2 Films on PET Substrate by ECR-MOCVD (반응가스조성이 PET기판위에 ECR 화학증착법에 의해 제조된 SnO2 박막특성에 미치는 영향)

  • Kim, Yun-Seok;Lee, Joong-Kee
    • Journal of the Korean Electrochemical Society
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    • v.8 no.3
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    • pp.139-145
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    • 2005
  • [ $SnO_x$ ] films on the flexible substrate of PET film were prepared at ambient temperature under a $(CH_3)_4Sn(TMT: tetra-methyl tin)-H_2-O_2$ atmosphere in order to obtain transparent conductive polymer by using ECR-MOCVD(Electro Cyclotron Resonance Metal Organic Chemical Yfpor Deposition) system. The prepared $SnO_x$ thin films show generally over $90\%$ of optical transmittance at wavelength range of 380-780nm and about $1\times10^{-2\~3}ohm{\cdot}cm$ of electrical resistivity. In the present study, effects of $O_2/TMT\;and\;H_2/TMT$ mole ratio on the properties of $SnO_x$ films are investigated and the other process parameters such as microwave power, magnetic current power, substrate distance and working pressure are fixed. Based on our experimental results, the $SnO_x$ film composition ratio of Sn and O directly influences on the electrical and optical properties of the films prepared. The $SnO_x$ film with low electric resistivity and high transmittance could be obtained by controlling the process parameters such as $O_2/TMT\;and\;H_2/TMT$ mole ratio, which play an important role to change the composition ratio between Sn and O. An increase of $O_2/TMT$ mole ratio brought on the increases 0 content in the $SnO_x$ film. On the other hand, an increase of $H_2/TMT$ mole ratio lead to decreases the oxygen content in the film. The optimized composition ratio of oxygen : tin Is determined as 2.4: 1 at $O_2/TMT$ of 80 and $H_2/TMT$ of 40 mole ratio, respectively.

The Fabrication of Porous Nickel Oxide Thin Film using Anodization Process for an Electrochromic Device

  • Lee, Won-Chang;Choe, Eun-Chang;Hong, Byeong-Yu
    • Proceedings of the Korean Vacuum Society Conference
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    • 2016.02a
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    • pp.407.1-407.1
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    • 2016
  • Electrochromism is defined as a phenomenon which involves persistently repeated change of optical properties between bleached state and colored state by simultaneous injection of electrons and ions, sufficient to induce an electrochemical redox process. Due to this feature, considerable progress has been made in the synthesis of electrochromic (EC) materials, improvements of EC properties in EC devices such as light shutter, smart window and variable reflectance mirrors etc. Among the variable EC materials, solid-state inorganics in particular, metal oxide semiconducting materials such as nickel oxide (NiO) have been investigated extensively. The NiO that is an anodic EC material is of special interest because of high color contrast ratio, large dynamic range and low material cost. The high performance EC devices should present the use of standard industrial production techniques to produce films with high coloration efficiency, rapid switching speed and robust reversibility. Generally, the color contrast and the optical switching speed increase drastically if high surface area is used. The structure of porous thin film provides a specific surface area and can facilitate a very short response time of the reaction between the surface and ions. The large variety of methods has been used to prepare the porous NiO thin films such as sol-gel process, chemical bath deposition and sputtering. Few studies have been reported on NiO thin films made by using sol-gel method. However, compared with dry process, wet processes that have the questions of the durability and the vestige of bleached state color limit the thin films practical use, especially when prepared by sol-gel method. In this study, we synthesis the porous NiO thin films on the fluorine doped tin oxide (FTO) glass by using sputtering and anodizing method. Also we compared electrical and optical properties of NiO thin films prepared by sol gel. The porous structure is promised to be helpful to the properties enhancement of the EC devices.

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Synthesis and Characterization of SnO2 Thin Films Deposited by Plasma Enhanced Atomic Layer Deposition Using SnCl4 Precursor and Oxygen Plasma

  • Lee, Dong-Gwon;Kim, Da-Yeong;Gwon, Se-Hun
    • Proceedings of the Korean Vacuum Society Conference
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    • 2016.02a
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    • pp.254-254
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    • 2016
  • Tin dioxide (SnO2) thin film is one of the most important n-type semiconducting materials having a high transparency and chemical stability. Due to their favorable properties, it has been widely used as a base materials in the transparent conducting substrates, gas sensors, and other various electronic applications. Up to now, SnO2 thin film has been extensively studied by a various deposition techniques such as RF magnetron sputtering, sol-gel process, a solution process, pulsed laser deposition (PLD), chemical vapor deposition (CVD), and atomic layer deposition (ALD) [1-6]. Among them, ALD or plasma-enhanced ALD (PEALD) has recently been focused in diverse applications due to its inherent capability for nanotechnologies. SnO2 thin films can be prepared by ALD or PEALD using halide precursors or using various metal-organic (MO) precursors. In the literature, there are many reports on the ALD and PEALD processes for depositing SnO2 thin films using MO precursors [7-8]. However, only ALD-SnO2 processes has been reported for halide precursors and PEALD-SnO2 process has not been reported yet. Herein, therefore, we report the first PEALD process of SnO2 thin films using SnCl4 and oxygen plasma. In this work, the growth kinetics of PEALD-SnO2 as well as their physical and chemical properties were systemically investigated. Moreover, some promising applications of this process will be shown at the end of presentation.

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Effect of Electrolyte Additive on the Electrochemical Characteristics of Lithium Vanadium Oxide Anode (전해질 첨가제가 리튬 바나듐 옥사이드 전극의 성능에 미치는 영향)

  • Lee, Je-Nam
    • Journal of the Korean Electrochemical Society
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    • v.21 no.3
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    • pp.55-60
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    • 2018
  • The demand for LIBs with higher energy densities has increased continuously because the emergence of wider and more challenging applications including HEV and EV has became imperative. However, in the case of anode material, graphite is insufficient to meet this need. To meet such demand, several type of negative electrode materials like silicon, tin, SiO, and transition metal oxide have been investigated for the advanced lithium secondary batteries. Recently, lithium vanadium oxide, which has a layered structure, is assumed as one of the promising anode material as alternative of graphite. This material shows a high volumetric capacity, which is 1.5 times higher than that of graphite. However, relative low electrical conductivity and particle fracture, which results in the electrolyte decomposition and loss of electric contact between electrode, induce rapid capacity decay. In this report, we investigated the effect of electrolyte additive on the electrochemical characteristics of lithium vanadium oxide.

Effect of Annealing Temperature on the Properties of ITO/Au/ITO Films

  • Chae, Joo-Hyun;Kim, Dae-Il
    • Korean Journal of Materials Research
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    • v.19 no.2
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    • pp.108-110
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    • 2009
  • Transparent Sn-doped $In_2O_3$ (ITO) single-layer and ITO/Au/ITO multilayer films were deposited on glass substrates by reactive magnetron sputtering to compare the properties of the films. They were then annealed in a vacuum of $1{\times}10^{-2}\;Pa$ at temperatures ranging from 150 to $450^{\circ}C$ for 20 min to determine the effect of the annealing temperature on the properties of the films. As-deposited 100 nm thick ITO films exhibit a sheet resistance of $130{\Omega}/{\square}$ and optical transmittance of 77% at a wavelength length of 550 nm. By inserting a 5 nm-thick Au layer in ITO/metal/ITO (IMI) films, the sheet resistance was decreased to as low as $20{\Omega}/{\square}$ and the optical transmittance was decreased to as little as 73% at 550 nm. Post-deposition annealing of ITO/Au/ITO films led to considerably lower electrical resistivity and higher optical transparency. In the Xray diffraction pattern, as-deposited ITO films did not show any diffraction peak, whereas as-deposited ITO/ Au/ITO films have Au (222) and $In_2O_3$ (110) crystal planes. When the annealing temperature reached the 150 - $450^{\circ}C$ range, the both diffraction peak intensities increased significantly. A sheet resistance of $8{\Omega}/{\square}$ and an optical transmittance of 82% were obtained from the ITO/Au/ITO films annealed at $450^{\circ}C$.

Analysis of Heavy Metals in Dyes and Pigments Used in Make up Tattoo (화장용 문신으로 사용되는 염료 및 색소의 중금속 분석)

  • Jeong, Mi-Ra;Lee, Hui-Seong;LEE, Ji-Young;Lee, Sun-Hwa
    • Journal of the Korea Convergence Society
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    • v.9 no.4
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    • pp.321-329
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    • 2018
  • This study was attempted to provide data for establishing appropriate guidelines and control standards for accurate information and production of dyes and pigments through the analysis of representative heavy metals and other metals used in cosmetic tattoos. A total of 30 tattoo products for cosmetics were selected from among the representative heavy metals such as arsenic, antimony, cobalt, cadmium, copper, lead, zinc, barium, tin, selenium, chromium and magnesium, manganese(15kinds) were analyzed. As a result of examining the contents of heavy metals in dyes and pigments used in cosmetic tattoo products, it was found that the total of 20products(66.7%) exceeded the reference value and found to be unsuitable for safety standards. It is suggested that the guidance of the specialized agency for safe procedures, appropriate control controls and standards for the dyes and pigments used, and the potential risks of heavy metals are needed.

Metal Oxide-Based Heterojunction Broadband Photodetector (산화물 반도체 기반의 이종접합 광 검출기)

  • Lee, Sang-eun;Lee, Gyeong-Nam;Ye, Sang-cheol;Lee, Sung-ho;Kim, Joondong
    • Journal of the Korean Institute of Electrical and Electronic Material Engineers
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    • v.31 no.3
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    • pp.165-170
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    • 2018
  • In this study, double-layered TCO (transparent conductive oxide) films were produced by depositing two distinct TCO materials: $SnO_2$ works as an n-type layer and ITO (indium-doped tin oxide) serves as a transparent conductor. Both transparent conductive oxide-films were sequentially deposited by sputtering. The electrical and optical properties of single-layered TCO films ($SnO_2$) and double-layered TCO ($ITO/SnO_2$) films were investigated. A TCO-embedding photodetector was realized through the formation of an $ITO/SnO_2/p-Si/Al$ layered structure. The remarkably high rectifying ratio of 400.64 was achieved with the double-layered TCO device, compared to 1.72 with the single-layered TCO device. This result was attributed to the enhanced electrical properties of the double-layered TCO device. With respect to the photoresponses, the photocurrent of the double-layered TCO photodetector was significantly improved: 1,500% of that of the single-layered TCO device. This study suggests that, due to the electrical and optical benefits, double-layered TCO films are effective for enhancing the photoresponses of TCO photodetectors. This provides a useful approach for the design of photoelectric devices, including solar cells and photosensors.