• Title/Summary/Keyword: Time-of-flight secondary ion mass spectrometry

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Investigation of Polyesters by Time-of-Flight Secondary Ion Mass Spectrometry

  • Lee, Yeonhee;Han, Seunghee;Hercules, David M.
    • Analytical Science and Technology
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    • v.8 no.4
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    • pp.715-722
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    • 1995
  • The structural characterization for series of polyesters has been done by time-of-flight secondary ion mass spectrometry (TOF-SIMS). Polymer fragments and intact oligomers composed of large numbers of repeat units have been investigated. Transesterification of polyesters in trifluoroacetic acid (TFA) and chlorodifluoroacetic acid (CFA) was monitored and reaction products were identified using TOF-SIMS. The shapes and intensities of clusters in transesterification spectra show good agreement with the theoretical isotope pattern. TOF-SIMS spectra were used to obtain information about the progress of the transesterification reaction.

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Boron Detection Technique in Silicon Thin Film Using Dynamic Time of Flight Secondary Ion Mass Spectrometry

  • Hossion, M. Abul;Arora, Brij M.
    • Mass Spectrometry Letters
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    • v.12 no.1
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    • pp.26-30
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    • 2021
  • The impurity concentration is a crucial parameter for semiconductor thin films. Evaluating the impurity distribution in silicon thin film is another challenge. In this study, we have investigated the doping concentration of boron in silicon thin film using time of flight secondary ion mass spectrometry in dynamic mode of operation. Boron doped silicon film was grown on i) p-type silicon wafer and ii) borosilicate glass using hot wire chemical vapor deposition technique for possible applications in optoelectronic devices. Using well-tuned SIMS measurement recipe, we have detected the boron counts 101~104 along with the silicon matrix element. The secondary ion beam sputtering area, sputtering duration and mass analyser analysing duration were used as key variables for the tuning of the recipe. The quantitative analysis of counts to concentration conversion was done following standard relative sensitivity factor. The concentration of boron in silicon was determined 1017~1021 atoms/㎤. The technique will be useful for evaluating distributions of various dopants (arsenic, phosphorous, bismuth etc.) in silicon thin film efficiently.

CHARACTERIXATION OF PLASMA ION IMPLANTED SURFACES USING TIME-OF-FLIGHT SECONDARY ION MASS SPECTROMATRY

  • Lee, Yeon-Hee;Han, Seung-Hee;Lee, Jung-Hye;Yoon, Jung-Hyeon
    • Journal of the Korean institute of surface engineering
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    • v.29 no.6
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    • pp.880-883
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    • 1996
  • Plasma Source Ion Implantation (PSII) technique was used for the hydrophilization or hydrophobization of polymer surfaces. Polymers were modified with different plasma gases such as oxygen, nitrogen, argon, and tetrafluoromethane, and for varying lengths of treatment time. Plasma ion treatment of oxygen, nitrogen, argon and their mixtures increased significantly the hydrophilic properties of polymer surfaces. More hydrophobic surfaces of polymers were formed after the treatment with tetrafluoromethane. A study of plasma source ion implanted polymers was performed using contact angle measurements and Time-of-Flight Secondary Ion Mass Spectrometry (TOF-SIMS). The TOF-SIMS spectra and depth profile were used to obtain the information about the treated surfaces of polymers. The permanence of this technique could be evaluated with respect to ageing time. The surfaces treated with PSII gave better stability than other surface modification methods.

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Characteristics of the NO/$N_2O$ Nitrided Oxide and Reoxidized Nitrided Oxide for NVSM (비휘발성 기억소자를 위한 NO/$N_2O$ 질화산화막과 재산화 질화산화막의 특성에 관한 연구)

  • 이상은;서춘원;서광열
    • Journal of the Korean Vacuum Society
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    • v.10 no.3
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    • pp.328-334
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    • 2001
  • The characteristics of $NO/N_2O$ nitrided oxide and reoxidized nitrided oxide being studied as super thin gate oxide and gate dielectric layers of nonvolatile semiconductor memory(NVSM) was investigated by dynamic secondary ion mass spectrometry(D-SMS), time-of-flight secondary ion mass spectrometry(ToF-SIMS), and x-ray photoelectron spectroscopy (XPS). The specimen was annealed in $NO/N_2O$ ambient after initial oxide process. The result of D-SIMS exhibits that the center of nitrogen exists at the initial oxide interface and the distribution of nitrogen is wider in the annealing process with $N_2O$ than with NO annealing process. For investigating the condition of nitrogen that exists within the nitrided oxide, ToF-SIMS and XPS analysis were carried out. It was shown that the center of nitrogen investigated by D-SIMS was expected the SiON chemical bonds. The nitrogen near the newly formed reoxide/silicon substrate interface was appeared as $Si_2NO$ chemical bonds, and it is agreed with the distribution of SiN and $Si_2NO$ species by ToF-SIMS.

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Surface Mass Imaging Technique for Nano-Surface Analysis

  • Lee, Tae Geol
    • Proceedings of the Korean Vacuum Society Conference
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    • 2013.02a
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    • pp.113-114
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    • 2013
  • Time-of-flight secondary ion mass spectrometry (TOF-SIMS) imaging is a powerful technique for producing chemical images of small biomolecules (ex. metabolites, lipids, peptides) "as received" because of its high molecular specificity, high surface sensitivity, and submicron spatial resolution. In addition, matrix-assisted laser desorption and ionization time-of-flight (MALDI-TOF) imaging is an essential technique for producing chemical images of large biomolecules (ex. genes and proteins). For this talk, we will show that label-free mass imaging technique can be a platform technology for biomedical studies such as early detection/diagnostics, accurate histologic diagnosis, prediction of clinical outcome, stem cell therapy, biosensors, nanomedicine and drug screening [1-7].

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Chemical Imaging Analysis of the Micropatterns of Proteins and Cells Using Cluster Ion Beam-based Time-of-Flight Secondary Ion Mass Spectrometry and Principal Component Analysis

  • Shon, Hyun Kyong;Son, Jin Gyeong;Lee, Kyung-Bok;Kim, Jinmo;Kim, Myung Soo;Choi, Insung S.;Lee, Tae Geol
    • Bulletin of the Korean Chemical Society
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    • v.34 no.3
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    • pp.815-819
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    • 2013
  • Micropatterns of streptavidin and human epidermal carcinoma A431 cells were successfully imaged, as received and without any labeling, using cluster $Au_3{^+}$ ion beam-based time-of-flight secondary ion mass spectrometry (TOF-SIMS) together with a principal component analysis (PCA). Three different analysis ion beams ($Ga^+$, $Au^+$ and $Au_3{^+}$) were compared to obtain label-free TOF-SIMS chemical images of micropatterns of streptavidin, which were subsequently used for generating cell patterns. The image of the total positive ions obtained by the $Au_3{^+}$ primary ion beam corresponded to the actual image of micropatterns of streptavidin, whereas the total positive-ion images by $Ga^+$ or $Au^+$ primary ion beams did not. A PCA of the TOF-SIMS spectra was initially performed to identify characteristic secondary ions of streptavidin. Chemical images of each characteristic ion were reconstructed from the raw data and used in the second PCA run, which resulted in a contrasted - and corrected - image of the micropatterns of streptavidin by the $Ga^+$ and $Au^+$ ion beams. The findings herein suggest that using cluster-ion analysis beams and multivariate data analysis for TOF-SIMS chemical imaging would be an effectual method for producing label-free chemical images of micropatterns of biomolecules, including proteins and cells.