• Title/Summary/Keyword: Time Switching

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A Novel Dead Time Minimization Algorithm for improving the inverter output waveforms (인버터 출력파형 개선을 위한 새로운 휴지기간 최소화 알고리즘)

  • Han, Yun-Seok;Choe, Jeong-Su;Kim, Yeong-Seok
    • The Transactions of the Korean Institute of Electrical Engineers B
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    • v.48 no.5
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    • pp.269-277
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    • 1999
  • In this paper, a novel dead time minimization algorithm is proposed for improving the output waveform of an inverter. The adverse effects of the dead time are mainly described by the voltage drop and the distortion factor of waveforms. The principle of the proposed algorithm is organized with forbidding unnecessary firings fo the inverter switches which are not conducted even though the gate signal is impressed. The proposed methods are explained with the conduction mode of output currents. The H/W and S/W implementation method of the proposed algorithm are also presented. The validity of the proposed algorithm is verified by comparing the simulation and experimental results with conventional methods. It can be concluded from the results that the proposed algorithm has the advantage which is able to reduce the harmonics in the output voltages and which the output voltage can nearly be equal to the reference value. Another advantage of the proposed method is the reduction of total numbers of switching so that the switching losses of inverter drives can be minimized.

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Direct Torque Control Of Induction Motor for Constant Switching Frequency (일정 스위칭 주파수를 위한 유도전동기의 직접토오크 제어)

  • Choi, Youn-Ok;Chung, Byung-Ho;Lim, Byung-Ok;Jeong, Sam-Young;Seo, Jin-Yeon;Cho, Geum-Bae;Baek, Hyung-Lae
    • Proceedings of the KIEE Conference
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    • 2002.07b
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    • pp.1152-1154
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    • 2002
  • In this paper, a direct torque control method of an induction motor is proposed which enables constant switching frequency. The switching strategy of a conventional direct torque control scheme which is based on hysteresis comparator results in a variable switching frequency which depends on the speed, flux, stator voltage and hysteresis band of the comparator. This paper proposes a new switching strategy which determine the effective switching time on each switching period by comparing the ascending and descending torque slopes. The simulation results are presented to verify this proposed scheme.

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The Characteristics of Conduction rind Switching Voltage for As-Ge-Te Memory Switching Device (As-Ge-Te 메모리 스위칭 소자의 전도 및 스위칭 전압 특성)

  • 이병석;이현용;이영종;정흥배
    • Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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    • 1995.11a
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    • pp.67-70
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    • 1995
  • Amorpous As$\sub$10/Ge$\sub$15/Te$\sub$75/ device shows the memory switching characterisite under d.c. bias. In bulk material, a-As$\sub$10/Ge/sub15/Te$\sub$75/s switching voltage range is above 100 volts. Our purposes in this gaudy are decreasing a switching threshold voltage, finding the properties of d.c., a.c. conduction, and the characterisitics of switching threshold voltage fur a-As$\sub$10/Ge$\sub$15/Te$\sub$75/. As the results, the d.c.and a.c. conductivities increase with temperature. From the data of conductivity, various electrical and physical properties are obtained experimentally. The switching threshold voltages decrease with increasing annealing temperature and time, but increase with increasing film thickness and distance of electrode for d.c. bias.

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The characteristics of D.C. switching threshold voltage for amorphous $As_{10}Ge_{15}Te_{75}$ thin film (비정질 $As_{10}Ge_{15}Te_{75}$박막의 D.C. 스위칭 임계전압 특성)

  • 이병석;이현용;이영종;정홍배
    • Electrical & Electronic Materials
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    • v.9 no.8
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    • pp.813-818
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    • 1996
  • Amorphous As$_{10}$Ge$_{15}$ Te$_{75}$ device shows the memory switching characteristics under d.c. bias. In bulk material, a-As$_{10}$Ge$_{15}$ Te$_{75}$ switching threshold voltage (V$_{th}$) is very high (above 100 volts), but in the case of thin film, V$_{th}$ decreases to a few or ten a few volts. The characteristics of V$_{th}$ depends on the physical dimensions such as the thickness of thin film and the separation between d.c. electrodes, and the annealing conditions. The switching threshold voltage decreases exponentially with increasing annealing temperature and annealing time, but increases linearly with the thickness of thin film and exponentially with increasing the separation between d.c. electrodes. The desirable low switching threshold voltage, therefore, can be obtained by the stabilization through annealing and changing physical dimensions.imensions.sions.

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Realization of the Space Vector PWM Inverter Using a Quasi - Resonant DC Link (준 공진 DC 링크를 사용한 공간 벡터 PWM 인버터의 구현)

  • 한완옥;조성정;이정규;임승하;이성백
    • Journal of the Korean Institute of Telematics and Electronics B
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    • v.31B no.12
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    • pp.137-144
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    • 1994
  • In this paepr, we present a soft switching PWM inverter as reducing switching loss and stress at high power application. The PWM inverter is designed by space voltage about 2$\sqrt{3}$ times (15%) than conventional SPWM method. To reduce switching loss and stress. The DC link requires a capacitor, an inductor and two additional switches. Therefore proposed inverter performs trun PWM operation under the soft switching condition. As a result of soft switching we can reduce switching loss and ensure stability of switching devices. For approach to real time, control system is realized by 8 bit single-chip microprocessor. Therefore, we can construct system is with simplified volumn and structure by eliminating carrier wave and referrence wave generator of conventional SPWM method.

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Switching Surge Analysis of Underground Transmission Systems (지중송전시스템의 스위칭서지 해석)

  • Jung, Chae-Kyun;Lee, Jong-Beom;Jang, Sung-Hwan;Kang, Ji-Won
    • Proceedings of the KIEE Conference
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    • 2002.07a
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    • pp.481-483
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    • 2002
  • In this paper, for continuously changed closing time of circuit breakers, switching overvoltage on 345kV underground transmission systems are variously analyzed using EMTP with statistical analysis method. And, switching overvoltage and closing surge occurred in conductors at sending and receiving end and metal sheath with variation of cable length are analyzed, and the reduction effects for switching overvoltage considered preinsertion resistance of circuit breakers are examined.

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Memoryless Feedback Temperature Control of an Extruder by the Switching Actuating Value

  • Lee, Man-Hyung;Hong, Suh-Il
    • 제어로봇시스템학회:학술대회논문집
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    • 2001.10a
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    • pp.100.2-100
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    • 2001
  • In this paper, we presented a switching-based control algorithm for improving the speed of response on temperature control of an extruder. We proposed a switching actuating value method in a temperature control of extruder and showed the effect of H$\infty$ control and PID control. Recently, the memoryless feedback control had proposed, which was not only the real time integration element, but also the memory elements. We examined the application of a switching actuating value method to a memoryless feedback, in a unit barrel temperature control of an extruder.

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Development of Message Gathering System for digital electronic switching systems

  • seung sik Shin;Lee, Seung whan;Chan soo Chung;Bong sun Yoo;Kim, Hoon hak
    • 제어로봇시스템학회:학술대회논문집
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    • 2002.10a
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    • pp.121.4-121
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    • 2002
  • The digital electronic switching system has some problems, when this system processes OAM(Operation, Administration And Maintenance) messages about the fault, the traffic, the account, and the performance, etc. , at the present. Therefore, we studied on Methods that could process OAM messages out of all digital electronic switching systems and, first of all, developed the MGS (Message Gathering System) to be able to accept and process the fault message of OAM messages out of all digital electronic switching systems in real time.

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The robust controller design for linear multivariable servo mechanism using switching dynamics (스위칭 동태방정식을 이용한 선형 다변수서보메카니즘에 대한 견고한 제어기 설계)

  • 박귀태;곽군평;김동식;최중경;주영중
    • 제어로봇시스템학회:학술대회논문집
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    • 1989.10a
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    • pp.535-540
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    • 1989
  • This paper presents an approach for designing a linear multivariable servo mechanism for the case of constant and time varying disturbances. In this paper, we use an "observer-based" approach to consider the disturbance vector as states of the system and the resulting servomechanism design involves the design of an asymptotic observer which estimates both the actual plant states and the disturbance states. The design makes use of switching dynamics instead of switching logics to obtain the sliding mode and from the switching dynamics we can remove the undesirable chattering phenomena.phenomena.

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Switching Phenomena of AsTe Glass Semiconductor (AsTe계 유리반도체의 스위칭현상)

  • 박창엽
    • 전기의세계
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    • v.21 no.1
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    • pp.17-21
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    • 1972
  • Electrical resistivity and switching phenomena in glass semiconductor of AsTe and AsTeGa is studied. Samples sliced from ingot which is air quenched or water quenched, show high resistivity at room temperature. The resistivity of the AsTe and AsTeGa is 1*10$^{6}$ .ohm.-cm and 5*10$^{6}$ .ohm.-cm at 27.deg. C. Switching phenomena take place in thin the thick samples. Holding voltage is different with the thickness of the samples and the characteristics of switching in the thin and thick samhles are similar. When square wave pulse voltage is applied, delay time is detected to 5.mu.sec by oscilloscpoe.

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