• Title/Summary/Keyword: Time Device

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Impact Analysis of Communication Time Delay and Properties of a Haptic Device on Stability Boundary for a Haptic System with a First-Order Hold (일차홀드 방식을 포함한 햅틱 시스템의 안정성 영역에 대한 통신시간지연과 햅틱장치 물성치의 영향 분석)

  • Lee, Kyungno
    • Journal of the Korea Academia-Industrial cooperation Society
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    • v.18 no.1
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    • pp.572-578
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    • 2017
  • Haptic systems help users feel a realistic sensation when they manipulate virtual objects in the remote virtual environment. However, there are communication time delays that may make the haptic system unstable. This paper shows the relationship between communication time delay, properties of a haptic device, and the stability of the haptic system with the first-order hold method in a simulation. The maximum available stiffness of a virtual spring with the first-order hold method is larger than in the zero-order hold method when there is no time delay. However, when the communication time delay is much larger than the sampling time, the maximum available stiffness to guarantee the stability becomes the same, irrespective of the sample-hold methods. Besides, the maximum available stiffness increases in inverse proportion to the communication time delay and in proportional to the damping coefficient of the haptic device.

System Performance Improvement of IEEE 802.15.3a By Using Time Slot Synchronization In MAC Layer (UWB MAC의 Time Slot 동기를 통한 시스템 성능 개선)

  • Oh Dae-Gun;Chong Jong-Wha
    • Journal of the Institute of Electronics Engineers of Korea TC
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    • v.43 no.3 s.345
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    • pp.84-94
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    • 2006
  • In this paper, we propose the algorithm to reduce guard time of UWB MAC time slot for throughput gain. In the proposed draft by multiband ofdm alliance (MBOA), Guard time of each medium access slot (MAS) is composed of shortest inter-frame space (SIFS) and MaxDrift which is the time caused by maximum frequency offset among devices. In this paper, to reduceguard time means that we nearly eliminate MaxDrift term from guard time. Each device of a piconet computes relative frequency offset from the device initiating piconet using periodically consecutive transferred beacon frames. Each device add or subtract the calculated relative frequency offset to the estimated each MAS starting point in order to synchronize with calculated MAS starting point of the device initiating piconet. According to verification of simulations, if the frequency offset estimator is implemented with 8 decimal bit, the ratio of the wasted time to Superframe is always less than 0.0001.

A study on imaging device sensor data QC (영상장치 센서 데이터 QC에 관한 연구)

  • Dong-Min Yun;Jae-Yeong Lee;Sung-Sik Park;Yong-Han Jeon
    • Design & Manufacturing
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    • v.16 no.4
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    • pp.52-59
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    • 2022
  • Currently, Korea is an aging society and is expected to become a super-aged society in about four years. X-ray devices are widely used for early diagnosis in hospitals, and many X-ray technologies are being developed. The development of X-ray device technology is important, but it is also important to increase the reliability of the device through accurate data management. Sensor nodes such as temperature, voltage, and current of the diagnosis device may malfunction or transmit inaccurate data due to various causes such as failure or power outage. Therefore, in this study, the temperature, tube voltage, and tube current data related to each sensor and detection circuit of the diagnostic X-ray imaging device were measured and analyzed. Based on QC data, device failure prediction and diagnosis algorithms were designed and performed. The fault diagnosis algorithm can configure a simulator capable of setting user parameter values, displaying sensor output graphs, and displaying signs of sensor abnormalities, and can check the detection results when each sensor is operating normally and when the sensor is abnormal. It is judged that efficient device management and diagnosis is possible because it monitors abnormal data values (temperature, voltage, current) in real time and automatically diagnoses failures by feeding back the abnormal values detected at each stage. Although this algorithm cannot predict all failures related to temperature, voltage, and current of diagnostic X-ray imaging devices, it can detect temperature rise, bouncing values, device physical limits, input/output values, and radiation-related anomalies. exposure. If a value exceeding the maximum variation value of each data occurs, it is judged that it will be possible to check and respond in preparation for device failure. If a device's sensor fails, unexpected accidents may occur, increasing costs and risks, and regular maintenance cannot cope with all errors or failures. Therefore, since real-time maintenance through continuous data monitoring is possible, reliability improvement, maintenance cost reduction, and efficient management of equipment are expected to be possible.

Passivity Control of a Passive Haptic Device based on Passive FME Analysis

  • Cho, Chang-Hyun;Kim, Beom-Seop;Kim, Mun-Sang;Song, Jae-Bok;Park, Mi-Gnon
    • 제어로봇시스템학회:학술대회논문집
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    • 2003.10a
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    • pp.1559-1564
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    • 2003
  • In this paper, a control method is presented to improve performance of haptic display on a passive haptic device equipped with passive actuators. In displaying a virtual wall with the passive haptic device, an unstable behavior occurs with excessive actions of brakes due to the time delay mainly arising from the update rate of the virtual environment and force approximation originated from the characteristics of the passive actuators. The previous T.D.P.C. (Time Domain Passivity Control) method was not suitable for the passive haptic device, since a programmable damper used in the previously introduced T.D.P.C. method easily leads to undesirable behaviors. A new passivity control method is evaluated with considering characteristics of the passive device. First, we propose a control method which is designed under the analysis of the passive FME (Force Manipulability Ellipsoid). And then a passivity control scheme is applied to the proposed control method. Various experiments have been conducted to verify the proposed method with a 2-link mechanism.

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A Development of Image Transfer Remote Maintenance Monitoring System for Hand Held Device (휴대용 화상전송 원격정비 감시시스템의 개발)

  • Kim, Dong-Wan;Park, Sung-Won
    • The Transactions of the Korean Institute of Electrical Engineers P
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    • v.58 no.3
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    • pp.276-284
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    • 2009
  • In this paper, we develop the image transfer remote maintenance monitoring system for hand held device which can compensate defects of human mistake. The human mistakes always happen when the worker communicate information each other to check and maintenance the equipment of the power plant under bad circumstance such as small place and long distance in power plant. A worker couldn't converse with other when in noisy place like Power plant. So, we make some hand device for handy size and able to converse in noisy place. The developed system can have improvement of productivity through increasing plant operation time. And developed system is composed of advanced H/W(hard ware) system and S/W(soft ware)system. The H/W system consist of media server unit, communication equipment with hand held device, portable camera, mike and head set. The advanced s/w system consist of data base system, client pc(personal computer) real time monitoring system which has server GUI(graphic user interface) program, wireless monitoring program and wire ethernet communication program. The client GUI program is composed of total solution program as pc camera program, and phonetic conversation program etc.. We analyzed the required items and investigated applicable part in the image transfer remote maintenance monitoring system with hand held device. Also we investigated linkage of communication protocol for developed prototype, developed software tool of two-way communication and realtime recording skill of voice with image. We confirmed the efficiency by the field test in preventive maintenance of plant power.

Novel Host materials for Phosphorescent OLEDs with long lifetime

  • Kim, Young-Hoon;Yu, Eun-Sun;Kim, Nam-Soo;Jung, Sung-Hyun;Kim, Hyung-Sun;Lee, Ho-Jae;Kang, Eui-Su;Chae, Mi-Young;Chang, Tu-Won
    • 한국정보디스플레이학회:학술대회논문집
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    • 2008.10a
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    • pp.549-552
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    • 2008
  • We have developed a novel bipolar host material with both electron and hole transporting characteristics. Since CGH(Cheil Green Host) has some electron transporting characteristics, it shows increased luminance efficiency in device including TCTA and without HBL(hole blocking layer:BAlq). Maximum power efficency of CGH was 27.4lm/W at the device structure ITO/DNTPD(60)/NPB(20)/TCTA(10)/EML(30)/Alq3(20)/LIF(1)/Al. We measured device performance again without HBL. The result of CGH showing 26.0lm/W is outstanding compared to that of CBP showing 19.1lm/W without holeblocking layer. We also measured lifetime and found to be 205hr at 3000nit, that is significant result compared to the life time of CBP device showing 82hr. CGH shows high device performance with holeblocking layer. Moreover, it shows better device performance and life time than those of CBP without holeblocking.

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Current-voltage Characteristics of Proton Irradiated NPT Type Pourer Diode (양성자가 주입된 NPT형 전력용 다이오드의 전류-전압 특성)

  • Kim Byoung-Gil;Baek Jong-Mu;Lee Jae-Sung;Bae Young-Ho
    • Journal of the Korean Institute of Electrical and Electronic Material Engineers
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    • v.19 no.1
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    • pp.7-12
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    • 2006
  • Local minority carrier lifetime control by means of particle irradiation is an useful technology for Production of modern silicon Power devices. Crystal damage due to ion irradiation can be easily localized by choosing appropriate irradiation energy and minority tarrier lifetime can be reduced locally only in the damaged layer. In this work, proton irradiation technology was used for improving the switching characteristics of a un diode. The irradiation was carried out with various energy and dose condition. The device was characterized by current-voltage, capacitance-voltage, and reverse recovery time measurements. Forward voltage drop was increased to 1.1 V at forward current of 5 A, which was $120\%$ of its original device. Reverse leakage current was 64 nA at reverse voltage of 100 V, and reverse breakdown voltage was 670 V which was the same voltage as original device without irradiation. The reverse recovery time of device was reduced to about $20\%$ compared to that of original device without irradiation.

A Study on the Development of a Real-time Energy Metering Device for Electric Railway Vehicles (전기철도차량 운행에너지 실시간 계측을 위한 에너지 미터링 장치 개발에 관한 연구)

  • Kim, Yong Ki;Han, Moon Seob;Chun, Yoon-Young;Bae, Chang Han;Yun, Byeong Ju
    • The Transactions of The Korean Institute of Electrical Engineers
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    • v.65 no.4
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    • pp.689-694
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    • 2016
  • The objective of this study is to identify the requirements for a energy metering device and develop a real-time energy metering device for measuring energy (electricity) consumption of the electric railway vehicle during its operation. The study also evaluated the performance of the AC voltage sensor, current sensor, and data meter for the device and performed EMC tests such as surge and EFT (Burst). The performance tests showed that the percent errors of the AC voltage sensor and current sensor were ${\leq}0.1%$, and ${\leq}0.5%$ under 10~127V, and 10~250A, respectively. The result of surge and EFT (Burst) tests also indicated that the device had no malfunction in any wave (combination and ring waves) under the treat level with 2kV. The result of the field test also confirmed that the device had no malfunction in data metering.

ITO Nanowires-embedded Transparent Metal-oxide Semiconductor Photoelectric Devices (ITO 나노와이어 기반의 투명 산화물 반도체 광전소자)

  • Kim, Hyunki;Kim, Hong-Sik;Patel, Malkeshkumar;Kim, Joondong
    • Journal of the Korean Institute of Electrical and Electronic Material Engineers
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    • v.28 no.12
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    • pp.808-812
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    • 2015
  • Highly optical transparent photoelectric devices were realized by using a transparent metal-oxide semiconductor heterojunction of p-type NiO and n-type ZnO. A functional template of ITO nanowires (NWs) was applied to this transparent heterojunction device to enlarge the light-reactive surface. The ITO NWs/n-ZnO/p-NiO heterojunction device provided a significant high rectification ratio of 275 with a considerably low reverse saturation current of 0.2 nA. The optical transparency was about 80% for visible wavelengths, however showed an excellent blocking UV light. The nanostructured transparent heterojunction devices were applied for UV photodetectors to show ultra fast photoresponses with a rise time of 8.3 mS and a fall time of 20 ms, respectively. We suggest this transparent and super-performing UV responser can practically applied in transparent electronics and smart window applications.

A Comparative Study on the Electrostatic Eliminator of Piezo Type Ionizer and Pulse AC Corona Type Ionizer (피에조를 이용한 코로나 방전과 펄스교류 코로나 방전을 이용한 정전기 제거장치의 비교 연구)

  • Kwon, Sung-Yul;Lee, Dong-Hoon;Choi, Jae-Wook
    • Journal of the Korean Society of Safety
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    • v.24 no.6
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    • pp.50-54
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    • 2009
  • Ionizer is used for improving manufacturing process and reducing inferior goods in the clean room. As a general rule, neutralization of the electrostatic charge is most important to make TFT-LCD, PDP and OLED. Pulse AC-static eliminator with output voltage of about 10.5kV has been used these days as neutralization device. But this device has a problem with lower performance which was caused by particles-adhesion on the electrode when it has been used for a long time. So we studied to solve the problem with lower performance using high Frequency(72kHz) static eliminator which was produced by Piezo transformer device, and compared Pulse-AC type with Piezo-electronic device such as decay time and ion balance for 10 weeks periods. As a result of this study, we found that Piezo transformer device has been maintained normal condition for 10 weeks. Also, we made the rule by this study, normally Piezo transformer device has to clean the electrode during every 11th weeks.