• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2004년도 하계학술대회 논문집 Vol.5 No.2
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• pp.648-651
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• 2004

Pb0.5Sr0.5TiO3(PST) thin films were deposited on the LaNiO3 (LNO(100))/Si and Pt/Ti/SiO2/Si substrates by the alkoxide-based sol-gel method. Structural and dielectric properties of PST thin films for the tunable microwave device applications were investigated. The PST films, which were directly grown on the Pt/Ti/SiO2/Si substrates showed the random orientation. For the LNO/Si substrates, the PST thin films exhibited highly (100) orientation. Compared with randomly oriented films, the highly (100)-oriented PST thin films showed better dielectric constant, tunability, and figure of merit (FOM). The dielectric constant, tunability, and FOM of the highly (100)-oriented PST thin film increased with increasing annealing temperature due to the decrease in lattice distortion. The differences in dielectric properties may be attributed to the change in the film stress and the in-plane oriented Polar axis depending on the substrate was used. The dielectric constants, dielectric loss and tunability of the PST thin films deposited on the LNO/Si substrates measured at 1 MHz were 483, 0.002, and 60.1%, respectively.

• Journal of Ceramic Processing Research
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• 제13권spc2호
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• pp.373-376
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• 2012

Thin films of Ag-SiO2-TiO2 composite oxides with SiO2/TiO2 of 20/80 molar compositions were prepared by the sol-gel method, using tetraethylorthosilicate (TEOS) and titanium isopropoxide (TIP) as precursors. Ag-SiO2-TiO2 films coated on commercial glass substrates have successfully been synthesized using sol-gel method. The Ag-SiO2-TiO2 film with 0.5% Ag-added concentration and 20 mol% SiO2-mixture gives optimal results on crystalline structure, optical property, surface area, and photochromic property. Absorption near the wavelength of the incident light decreased gradually. The reversibility of the two-photon writing process in Ag-SiO2-TiO2 film is clearly seen.

• 한국전기전자재료학회논문지
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• 제17권8호
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• pp.852-858
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• 2004

An alkoxide-based sol-gel method was used to fabricate $Ba_{0.6}Sr_{0.4}TiO_{3}$thin films doped by Bi from 5 to 20 mol% on a Pt/Ti/$SiO_2$/Sisubstrate. The structural and dielectric properties of BST thin films were investigated as a function of Bi dopant concentration. The dielectric properties of the Bi doped BST films were strongly dependent on the Bi contents. The dielectric constant and dielectric loss of the films decreased with increasing Bi content. However, the leakage current density of the 10 mol% Bi doped $Ba_{0.6}Sr_{0.4}TiO_{3}$ thin film showed the lowest value of 5.13$\times 10^{-7} A/{cm}^2$ at 5 V. The figure of merit (FOM) reached a maximum value of 32.42 at a 10 mol% Bi doped $Ba_{0.6}Sr_{0.4}TiO_{3}$thin films. The dielectric constant, loss factor, and tunability of the 10 mol% Bi doped $Ba_{0.6}Sr_{0.4}Tio_{3}$ thin films were 333, 0.0095, and 31.1%, respectively.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2005년도 추계학술대회 논문집 Vol.18
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• pp.39-40
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• 2005

Ferroelectric Eu-substituted $Bi_4Ti_3O_{12}$ (BET) thin films with a thickness of 200 nm were deposited on Pt(111)/Ti/SiO$_2$/Si(100) substrate by means of the liquid delivery MOCVD system and annealed at several temperatures in an oxygen atmosphere. At annealing temperature above $600^{\circ}C$, the microstructure of layered perovskite phase was observed. The remanent polarization of these films increased with increase in annealing temperature. The remanent polarization values ($2P_r$) of the BET thin films annealed at $720^{\circ}C$ were $37.71{\mu}C/cm^2$ at an applied voltage of 5 V.

• 한국세라믹학회지
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• 제32권3호
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• pp.281-288
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• 1995

to prepare the TiO2 thin films, acetyl-acetone(2.4-pentanedione)(1 : 1 molar ratio) was dissolved in the propanol solution of titanium(IV)isopropoxide(Ti[OCH(CH3)2]4). Al, Cr and Sb in the form of soluble salt and niobium ethoxide were added s dopants, respectively. Thin films were coated by the dip-coating method and characteristics were investigated by XRD, SEM and conductance meter. As a result, viscosity of sol was maintained below 4 centi Poise more than 20 days, and crystal growth and diminution of resistivity occurred as the heat treatment temperature increased. The grains grew over 1${\mu}{\textrm}{m}$ and the lowest resistivity was obtained when Nb was added at 130$0^{\circ}C$.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2009년도 하계학술대회 논문집
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• pp.218-219
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• 2009

$TiO_2$ thin films were deposited on si wafer and glass substrates by rf magnetron sputtering. The films were coated under argon atmosphere at different working pressures: 3mTorr, 5mTorr, 7mTorr, 10mTorr. The films were annealed at $550^{\circ}C$ for 5h after deposition. Film structures were analyzed with XRD, As the increase of working pressure, $TiO_2$ films have been good crystallinity. At 3mTorr and 5mTorr, the films were observed in rutile phase and anatase phase.

• 한국전기전자재료학회논문지
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• 제13권8호
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• pp.694-699
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• 2000

S $r_{0.9}$/B $i_{2.1}$/T $a_{2}$/ $O_{9}$ solutions was synthesized by MOD (metalorganic decomposition) method. SBT thin films with 2000$\AA$ thickness were prepared on Ir $O_2$/ $SiO_2$/Si and Pt/Ti/ $SiO_2$/Si substrates using the spin coating process and then investigated the dielectric and electrical properties of them. In the case of using Ir $O_2$bottom electrode the hysteresis loop was saturated at lower temperature than Pt/Ti electrode but the breakdown phenomenon was occurred at low voltage because of the rough surface morphology and porous microstructure of SBT thin films. As the results of the fatigue and imprint characteristics related to the lifetime and reliability of devices after 10$^{10}$ cycles the fatigue rates were about 10% at the Ir $O_2$and Pt/Ti bottom electrodes. Both SBT thin films with Ir $O_2$ and with Pt/Ti bottom electrodes show a slight tendency to imprint after 10$^{9}$ cycles but do not lead to a failure.e.e.

• The Korean Journal of Ceramics
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• 제2권1호
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• pp.48-53
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• 1996

Ion beam assisted crystallization behavior of sol-gel derived $PbTiO_3$ thin films, deposited on bare silicon(100) substrates by spin-casting method, has been investigated. Ar ion bombardment was directly conducted on the spincoated film surface with or without heating the film from room temperature to $300^{\circ}C$. Ion dose was changed from $5{\times}10^{15}$ to $7.5{\times}10^{16}$ $Ar^-/cm^2$. Formation of (110) oriented perovskite phase was obseerved with ion dose above $5{\times}10^{16}\; Ar^+/cm^2$. Crystallization of $PbTiO_3$ thin film could be enhanced with increasing the Air ion dose, or heating the substrate during ion bombardment. Crystallization of the $PbTiO_3$ films by ion bombardment was related to the local heating effect during ion bombardment.

• 대한전기학회:학술대회논문집
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• 대한전기학회 2004년도 하계학술대회 논문집 C
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• pp.1618-1620
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• 2004

The $Pb(Zr_{0.4}Ti_{0.6})O_3/Pb(Zr_{0.6}Ti_{0.4})O_3$ [PZT(4060)/(6040)] multilayered thin films were deposited by RF Sputtering method on the Pt/Ti/$SiO_2$/Si substrate. This procedure was repeated several times to form PZT(4060)/(6040) heterolayerd thin films. The effects on the structural and dielectric properties of PZT multilayered thin films were investigated. The MFM(Metal Ferroelectric Metal) type capacitors were made using the PZT(4060)/(6040) multilayered thin films deposited with optimum deposition condition. An enhanced dielectric property was observed in the PZT(4060)/(6040) multilayered thin films. The relative dielectric constant and dielectric loss at 100Hz of the PZT(4060)/(6040)-5 multilayered thin films were about 1106 and 0.016, respectively.

• 한국결정성장학회지
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• 제19권5호
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• pp.256-261
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• 2009

Sol-gel법에 의해 친수성 투명 $TiO_2$ 박막이 제조되었고, 박막의 접촉각, 표면구조, 투과율의 특성이 측정되었다. 더욱이 박막의 친수 특성을 향상시키기 위하여 계면활성제 tween 80이 이용되었다. Tween 80의 첨가량이 0, 10, 30, 50wt%일 때, 제조된 박막의 접촉각은 각각 $41.4^{\circ}$, $18.2^{\circ}$, $16.0^{\circ}$, $13.2^{\circ}$로 확인되었다. 제조된 $TiO_2$ 박막은 자외선 조사 후 Methylene blue용액을 분해시켜 흡광도를 감소시키는 광촉매 특성을 보여주었다. 일반유리(bare glass), Antimony Tin Oxide(ATO)코팅 유리, Fluorine Tin Oxide(FTO)코팅유리, Indium Tin Oxide(ITO)코팅유리 기판 위 에 Tween 80을 30 wt% 함유한 $TiO_2$ 용액을 적층하여 박막의 접촉각과 투과율을 측정하였다. 다양한 기판에 제조된 박막은 $16.2\sim27.1^{\circ}$의 표면 접촉각을 나타냈으며 자외선 조사 후에는 접촉각이 $13.2\sim17.6^{\circ}$로 낮아졌다. 특히 ATO코팅유리와 FTO 코팅유리 기판 위에 코팅된 필름은 가시광선 영역에서 각각 74.6%, 76.8%의 높은 투과율을 나타내었고, 적외선 영역에서는 각각 54.2%, 40.4%의 낮은 투과율을 나타냈다.