• Journal of Korean Society of Environmental Engineers
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• v.27 no.1
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• pp.59-66
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• 2005

[ $TiO_2$ ] was deposited by DC magnetron sputtering on glass surface under various sputtering parameters such as discharge power($0.6{\sim}5.2\;kW$, substrate temperature($R.T{\sim}350^{\circ}C$), Ar and $O_2$ flow ratio with $0{\sim}50\;sccm$($Ar+O_2$ 90 sccm) and about 1 mtorr of pressure. TiO-N thin film was prepared under same sputtering conditions for $TiO_2$ thin film except flow ratio($Ar+O_2+N_2$ 90 sccm). The sheet resistance of thin films deposited under these parameters was measured to analyze electronic characteristic and thin film's thickness(${\alpha}$-step), surface roughness(AFM) and formation construction(FE-SEM, XRD) were also measured to draw optimal sputtering parameters. In order to evaluate photo-activity of thin film($TiO_2$, TiO-N) made in optimal parameters for removal of pollutants, toluene among VOCs and Suncion Yellow among reactive dyes were chosen to probe organic compounds for photo-degradation. It was shown that the photo-catalytic thin films had a significant photo-activation for the chosen contaminants and especially TiO-N thin film showed maximum efficiency of 33% for toluene(5 ppm) removal in visible-light range.

• Journal of Korean Ophthalmic Optics Society
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• v.14 no.1
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• pp.57-62
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• 2009

Purpose: TiN films were deposited on sus304 by unbalanced magnetron sputtering system which was designed and developed as unbalancing the strength of the magnets in the magnetron electrode. The color and hardness of deposited TiN films was investigated. Methods: The cross sections of deposited films on silicon wafer were observed by SEM to measure the thickness of the films, the components of the surface of the films were identified by XPS, the components of the inner parts of the films were observed by XPS depth profiling. XPS high resolution scans and curve fittings of deposited films were performed for quantitative chemical analysis, Vickers micro hardness measurements of deposited films were performed with a nano indenter equipment. Results: The colors of deposited films gradually changed from light gold to dark gold, light violet, and indigo color with increasing of the thickness. It could be seen that the color change come from the composite change of three compound,$TiO_{x}N_{y}$, $TiO_2$, TiN. Especially, the composite change of$TiO_{x}N_{y}$ compound was thought to affect the color change with respect to thickness. Conclusions: Deposited films had lower than the value of general TiN film in Vickers hardness, which was caused by mixing three TiN, $TiO_2$,$TiO_{x}N_{y}$ compound in the deposited films. The increasing and decreasing of micro hardness with respect to thickness was thought to have something to do with the composite of TiN in the films.

• Proceedings of the Korean Institute of Surface Engineering Conference
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• 2012.05a
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• pp.161-161
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• 2012

결정질 TiCrN과 AlSiN 나노층이 교대로 구성하는 나노 다층 TiAlCrSiN 박막은 음극 아크 플라즈마 증착법에 의해 증착되었다. 나노 다층 TiAlCrSiN 박막의 산화특성들은 $600{\sim}1000^{\circ}C$사이에서 대기 중 최대 70시간동안 연구 되었다. 형성된 산화물들은 주로 $Cr_2O_3$, ${\alpha}-Al_2O_3$, $SiO_2$ 그리고 rutile-$TiO_2$들로 구성되었다. 나노 다층 TiAlCrSiN 박막이 산화하는 동안, 가장 바깥쪽의 $TiO_2$층은 Ti 이온의 외부확산에 의해, 외부 $Al_2O_3$층은 Al이온의 외부확산에 의해 형성되었다. 동시에, 내부($Al_2O_3$, $Cr_2O_3$) 혼합층과 가장 안쪽의 $TiO_2$층은 산소이온의 내부확산에 의해 형성되었다.

• Journal of the Korea Institute of Information and Communication Engineering
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• v.7 no.3
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• pp.468-473
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• 2003

In this paper, for enhancement of property on a-Si:H TFTs We measure interface characteristics of ferroelectrics thin film and a-Si:H thin film. First, SrTiO$_3$ thin film is deposited bye-beam evaporation. Deposited films are annealed for 1 hour in N2 ambient at $150^{\circ}C∼600^{\circ}C$. Dielectric characteristics of deposited SrTiO$_3$ films are very good because dielectric constant shows 50∼100 and breakdown electric field are 1 ∼ 1.5 MV/cm. a-SiN:H,a-Si:H(n-type a-Si:H) are deposited onto SrTiO$_3$ film to make MFNS(Meta1/ferroelectric/a-SiN:H/a-Si:H) by PECVD. After the C-V measurement for interface characteristics, MFNS structure shows no difference with MNS(Metal/a-SiN:H/a-Si:H) structure in C-V characteristics but the insulator capacitance value of MFNS structure is much higher than the MNS because of high dielectric constant of ferroelectric.

• Korean Journal of Optics and Photonics
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• v.11 no.5
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• pp.323-329
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• 2000

In this study we have calculated an ideal complex refractive index of a TiN trim used in a layer of anl1reilecnon (I\R) coatmg, [air$ISiO_2ITiNIglass$] in the visible. Also we simulated the rellectance of lwo-layer AR coating by varying the thicknesses of TiN and $SiO_2$ layers, respecl1vely. The simolation results show that we can controllhe lowest reflectance and AR band of tile AR coating. The TIN fihns were fabricated by a RF magnetron sputtering apparalus. The chemical, structural and electrical properties of TiN fih11S were inveshgated by the Rutherford backscattering spech'oscopy (RBS), atomic force microscope (AFM) and 4-point probe. The optical properlies were inve,tigated by the spectrophotometer and vanable angle spectroscopic ellipsometer (VASE). The smface roughness of TiN flhns \vas $9~10\AA$. TIle resistivity of TiN films was TEX>$360~730\mu$\Omega $ cm. The ,toichlOllletry of TiN film was 1'1: O:N = I: 0.65 :0.95 and ilic oxygen wa~ found on ilie smface. With these experimental and simu]al1on resulLs, we deposited duo: two-layer AR coating, [air$ISiO_2ITiNIglass$] and the refleClance was under 0.5% ill the regIOn of 440-650 run. 0 run.

• Journal of the Korean Crystal Growth and Crystal Technology
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• v.31 no.1
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• pp.37-42
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• 2021

The effect of chemical composition on the structural and thermal properties of TiZrN thin films was studied. As the Zr fraction in the deposited TixZr1-xN (x = 0.87, 0.82, 0.7, 0.6, and 0.28) increased, microstructural changes consisted of reduction in the grain size and a gradual transition from columnar structure to granular structure were observed. In addition, it was also confirmed that a gradual crystal phase transition from TiN to TiZrN has occurred as the Zr fraction increased up to 0.4. After heat treatment at 900℃, Ti0.82Zr0.18N and Ti0.7Zr0.3N layers were converted to a form in which rutile phase TiO2 and TiZrO4 oxides coexist, while Ti0.6Zr0.4N layer was converted to TiZrO4 oxide. Among the five compositions of TiZrN films, the Ti0.6Zr0.4N showed the best high temperature stability and produced a significant enhancement in the thermal oxidation resistance of Inconel 617 through suppressing the surface diffusion of Cr caused by thermal oxidation of the Inconel 617 substrate.

• Proceedings of the Korean Environmental Sciences Society Conference
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• 2005.05a
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• pp.279-280
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• 2005

TiO$_{2}$ 와 TiO-N 박막의 결정성은 전부 아나타제이고, 박막표현 거칠기는 방전전압이 높은 TiO-N 박막의 TiO$_{2}$ 박막보다 크다. 또한 박막의 광흡수스펙트럼을 측정한 결과 아주 약간의 red-shift를 보였고 이는 가시광영역에서도 광촉매 활용이 가능할 것이라는 결론을 내릴 수 있었다. 향후 이러한 박막 특성을 바탕으로 실제 염료 또는 VOCs 물질을 제거하는 적용성 테스트를 통해 광촉매 실용화에 더 나아갈 수 있을 것이라 사료되어진다.

• Proceedings of the Korean Institute of Information and Commucation Sciences Conference
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• 2003.05a
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• pp.501-504
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• 2003

In this paper, for enhancement of property on a-Si:H TFTs We measure interface characteristics of ferroelectrics thin film and a-Si:H thin film. First, SrTiO$_3$ thin film is deposited bye-beam evaporation. Deposited films are annealed for 1 hour in N2 ambient at 150$^{\circ}C$ ∼ 600$^{\circ}C$. Dielectric characteristics of deposited SrTiO$_3$ films are very good because dielectric constant shows 50∼100 and breakdown electric field are 1∼1.5MV/cm. a-SiN:H,a-Si:H(n-type a-Si:H) are deposited onto SrTiO$_3$ film to make MFNS(Metal/ferroelectric/a-SiN:H/a-Si:H) by PECVD. After the C-V measurement for interface characteristics, MFNS structure shows no difference with MNS(Metal/a-SiN:H/a-Si:H) structure in C-V characteristics but the insulator capacitance value of MFNS structure is much higher than the MNS because of high dielectric constant of ferroelectrics.

• Proceedings of the Korean Vacuum Society Conference
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• 2012.08a
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• pp.202-202
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• 2012

염료감응태양전지(DSSC)의 광변환 효율을 향상시키기 위하여 진공챔버에서 450도 고온에서 O2, Ar, and N2 혼합가스를 주입하여 다양한 plasma로 TiO2 박막을 처리하면서 소성시켰다. TiO2 표면을 cleaning하고 활성화함으로서 염료의 결합력을 향상시키는 것 외에 TiO2 내부의 oxygen vacancy를 변화를 관찰하였다. 실험에 사용한 박막은 glass 위에 FTO 박막을 입히고, 다공성 TiO2 나노입자 박막을 코팅하여 제조하였다(porous TiO2 나노입자(${\sim}12{\mu}m$)/FTO(Fluorine doped Tin oxide; $1{\mu}m$)/glass). 완성된 광전극에 대해서 XRD, XPS, EIS, FE-SEM 등을 이용하여 분석하였다. 또한 이렇게 전처리된 광전극을 사용한 DSSC를 제작하였다. 그리고 Solar-simulator를 통해 그 효율을 측정하여 '플라즈마환경에서 소성된 광전극에 대한 DSSC의 광변환효율에 미치는 효과'을 고찰하였다.

• Proceedings of the Korean Institute of Surface Engineering Conference
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• 2000.11a
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• pp.27-27
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• 2000

TDEAT precursor를 이용하여 DC-Pulse Plasma MOCVD 방법과 Thermal MOCVD 방법으로 각각 TiN 박막을 증착하였다. 본 논문에서는 DC-Pulse Plasma MOCVD 방 법으로 증착된 TiN 박막과 Therrnal MOCVD 방법으로 증착된 TiN 박막의 전기적 특성에 관하여 비교 분석하였다. 동일한 조건 하에서 각각의 방법으로 증착된 박막은 4-point probe를 이용하여 면저항을 측정하였고, XRD를 이용하여 박막의 성장방향을 관찰하였으며, FE-SEM을 이용하여 박막의 두께와 단면 사진, 표면형상을 관찰하였으며, AES depth profile을 통해 두께에 따른 Ti, N, 잔류 C와 0의 함량을 분석하였으며, XPS를 통해 C의 결합형태를 파악하고자 하였다. 분석결과 DC-Pulse Plasma MOCVD 방법으로 증착된 TiN 박막이 Thermal MOCVD 방법으로 증착된 TiN 박막에 비해 전기적 특성은 매우 우수하였으며, 치밀한 구조의 박막을 가지는 것으로 나타났다. 또한, 잔류 C, O의 함량이 낮은 것으로 나타났다.