• Journal of the Korean Institute of Illuminating and Electrical Installation Engineers
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• v.14 no.1
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• pp.1-6
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• 2000

In this paper, organic dispersion type back light EL(Electroluminescent) devices were manufactured using Ethyl hydroxy ethyl cellulose as organic binder, ZnS:Cu as phosphor powder and $BaTiO_3$ as dielectrics by screen printing method, which are focused on as a new light source. The properties of the fabricated organic dispersion type back light EL devices were showed $1.98[mA/\m^2]$ of current density, 0.075[W] of power consumption, 7.1[nF] of capacitance at $25[^{\circ}C]$, 100[V], 400[Hz], respectively. Also brightness of the fabricated device was revealed $20~110[cd/\m^2]$ at 50~150[V] and the change of color was shoed bluish green of x=0.1711, y=0.3676 which are color coordinate by CIE.

• Korean Journal of Materials Research
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• v.5 no.6
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• pp.754-762
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• 1995

Strontium titanate(SrTiO$_3$) thin film was prepared on Si substrates by RF magnetron sputtering for a high capacitance density required for the next generation of LSTs. The optimum deposition conditions for SrTiO$_3$thin film were investigated by controlling the deposition parameters. The crystallinity of films and the interface reactions between SrTO$_3$film and Si substrate were characterized by XRD and AES respectively. High quality films were obtained by using the mixed gas of Ar and $O_2$for sputtering. The films were deposited at various bias voltages to obtain the optimum conditions for a high quality file. The best crystallinity was obtained at film thickness of 300nm with the sputtering gas of Ar+20% $O_2$and the bias voltage of 100V. The barrier layer of Pt(100nm)/Ti(50nm) was very effective in avoiding the formation of SiO$_2$layer at the interface between SrTiO$_3$film and Si substrate. The capacitor with Au/SrTiO$_3$/Pt/Ti/SiO$_2$/Si structure was prepared to measure the electric and the dielectric properties. The highest capacitance and the lowest leakage current density were obtained by annealing at $600^{\circ}C$ for 2hrs. The typical specific capacitance was 6.4fF/$\textrm{cm}^2$, the relative dielectric constant was 217, and the leakage current density was about 2.0$\times$10$^{-8}$ A/$\textrm{cm}^2$ at the SrTiO$_3$film with the thickness of 300nm.

• Proceedings of the Korean Powder Metallurgy Institute Conference
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• 2006.09b
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• pp.1026-1029
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• 2006

Particulate reinforced titanium composites were produced by PM rout. Differents volumetric percentages of TiN reinforcements were used, 5,10,15 vol%. Samples were uniaxial pressed and vacuum sintered at differents temperatures between $1200-1300^{\circ}C$. Density, porosity, shrinkage, mechanical properties and microstructure were studied. Elastic properties and strength resistance were analysed by flexural strength and tension tests, and after the test, fractured samples were analysed too, obtaining a correlation between the fracture, interparticulated or intraparticulated, and the reinforcement addition.. Hardness and microhardness test were applied too, in order to complete the study about mechanical properties. In order to study wear resistance pin-on-disc test were used. In addition, the temperature influence, the reactivity between matrix and reinforcement, and the microstructures developed were observed by optical and electron microscopy.

• Journal of the Korean Ceramic Society
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• v.49 no.3
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• pp.272-278
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• 2012

Effects of ceramics on the microwave dielectric properties of polytetrafluoroethylene (PTFE) composites filled with $MgTiO_3$ (MTi) and/or $MgTa_2O_6$ (MTa) were investigated. The dielectric constant ($K$), quality factor ($Qf$), and temperature coefficient of resonant frequency ($TCF$) of the composites were dependent on the type and volume fraction ($V_f$) of the ceramics. For the composites mixed with MTa and MTi, the $K$ and $TCF$ values decreased with increasing MTi content. The $Qf$ values of the composites were affected by relative density. The measured $K$ values of the composites were compared with those predicted by several theoretical models. Good microwave dielectric properties with values of $K$=3.6, $Qf$ = 7,788 GHz, and $TCF$ = -0.19 ppm/$^{\circ}C$ were obtained for the composites with 0.1 $V_f$ ceramics (mixed 0.025MTa and 0.075MTi).

• Journal of Sensor Science and Technology
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• v.10 no.6
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• pp.295-303
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• 2001

White emission thin film electroluminecent device was fabricated with ZnS for phosphor layers and BST ferroelectric thin film for insulating layers. The ZnS:Mn and $ZnS:SmF_3$ layers were used for emission of red color. Also the $ZnS:TbF_3$ and $ZnS:AgF_3$ layers were used to emission of green and blue color, respectively. And the fabrication conditions of the BST insulating layers were followings, that is, the composition ratio of target, substrate temperature, working pressure and operating gas ratio were $Ba_{0.5}Sr_{0.5}Ti_{0.3}$, $400^{\circ}C$, 30 mTorr and 9:1, respectively. The thickness of phosphor were 150 nm for each layers and the insulating layers of upper and bottom were 400 nm and 200 nm, respectively. The luminesence threshold voltage was $75\;V_{rms}$ and the maximum brightness of the thin film electroluminecent device was $3200\;cd/m^2$ at $100\;V_{rms}$.

• Journal of the Korean Ceramic Society
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• v.42 no.2 s.273
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• pp.104-109
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• 2005

To study the role of PbO as the buffer layer, Pt/PZT/PbO/Si with the MFIS structure was deposited on the p-type (100) Si substrate by the r.f. magnetron sputtering with $Pb_{1.1}Zr_{0.53}Ti_{0.47}O_3$ and PbO targets. When PbO buffer layer was inserted between the PZT thin film and the Si substrate, the crystallization of the PZT thin films was considerably improved and the processing temperature was lowered. From the result of an X-ray Photoelectron Spectroscopy (XPS) depth profile result, we could confirm that the substrate temperature for the layer of PbO affects the chemical states of the interface between the PbO buffer layer and the Si substrate, which results in the inter-diffusion of Pb. The MFIS with the PbO buffer layer show the improved electric properties including the high memory window and low leakage current density. In particular, the maximum value of the memory window is 2.0V under the applied voltage of 9V for the Pt/PZT(200 nm, $400^{\circ}C)/PbO(80 nm)/Si$ structures with the PbO buffer layer deposited at the substrate temperature of $300^{\circ}C$.

• Proceedings of the Korean Institute of Surface Engineering Conference
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• 2018.06a
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• pp.75-75
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• 2018

Commercially pure titanium (CP-Ti) and Ti-6Al-4V alloys have been widely used in implant materials such as dental and orthopedic implants due to their corrosion resistance, biocompatibility, and good mechanical properties. However, surface modification of titanium and titanium alloys is necessary to improve osseointegration between implant surface and bone. Especially, when titanium oxide nanotubes are formed on the surface of titanium alloy, cell adhesion is greatly improved. In addition, plasma electrolytic oxide (PEO) coatings have a good safety for osseointegration and can easily and quickly form coatings of uniform thickness with various pore sizes. Recently, the effects of bone element such as magnesium, zinc, strontium, silicon, and manganese for bone regeneration are researching in dental implant field. The purpose of this study was researched on the surface morphology of PEO-treated Ti-6Al-4V alloy after anodic titanium oxide treatmentusing various instruments. Ti-6Al-4V ELI disks were used as specimens for nanotube formation and PEO-treatment. The solution for the nanotube formation experiment was 1 M $H_3PO_4$ + 0.8 wt. % NaF electrolyte was used. The applied potential was 30V for 1 hours. The PEO treatment was performed after removing the nanotubes by ultrasonics for 10 minutes. The PEO treatment after removal of the nanotubes was carried out in the $Ca(CH_3)_2{\cdot}H_2O+(CH_3COO)_2Mg{\cdot}4H_2O+Mn(CH_3COO)_2{\cdot}4H_2O+Zn(CH_3CO_2)_2Zn{\cdot}2H_2O+Sr(CH_2COO)_2{\cdot}0.5H_2O+C_3H_7CaO_6P$ and $Na_2SiO_3{\cdot}9H_2O$ electrolytes. And the PEO-treatment time and potential were 3 minutes at 280V. The morphology changes of the coatings on Ti-6Al-4V alloy surface were observed using FE-SEM, EDS, XRD, AFM, and scratch tester. The morphology of PEO-treated surface in 5 ion coating solution after nanotube removal showed formation or nano-sized mesh and micro-sized pores.

• Korean Journal of Materials Research
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• v.16 no.3
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• pp.173-177
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• 2006

Porous surfaced Ti implant compacts were fabricated by electro-discharging-sintering (EDS) of atomized spherical Ti powders. Powders of $50-100{\mu}m$ in diameter were vibratarily settled into a quarts tube and subject to a high voltage and high density current pulse in Ar atmosphere. Single pulse of 0.7 to 2.0 kJ/0.7 gpowder, from 150, 300, and $450{\mu}F$ capacitors was applied in less than $400{\mu}sec$ to produce twelve different porous-surfaced Ti implant compacts. The solid core formed in the center of the compact shows similar microstructure of cp Ti which was annealed and quenched in water. Hardness value at the solid core was much higher than that at the particle interface and particles in the porous layer, which can be attributed to both heat treatment and work hardening effects induced by EDS. Compression tests were made to evaluate the mechanical properties of the EDS compacts. The compressive yield strength was in a range of 12 to 304MPa which significantly depends on input energy. Selected porous-surfaced Ti-6Al-4V dental implant compacts with a solid core have much higher compressive strengths compared to the human teeth and sintered Ti dental implants fabricated by conventional sintering process.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.16 no.9
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• pp.807-811
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• 2003

We investigated the electrical characterisitics of T $a_2$ $O_{5}$ (tantalum pentoxide) film and Ti-O/T $a_2$ $O_{5}$ film deposited on $Al_2$ $O_3$based substrate. Ta (tantalum) electrode and $Al_2$ $O_3$ substrate was used for the purpose of simplifying the manufacturing process in IPD's (integrated passive devices). Dielectric materials (T $a_2$ $O_{5}$ and Ti-O/T $a_2$ $O_{5}$ films) deposited on Ta/Ti/A $l_2$ $O_3$ were annealed at 700 $^{\circ}C$ for 60 sec. in vacuum. The XRD results showed that as-deposited T $a_2$ $O_{5}$ film possessed amorphous structure, which was transformed to crystallines by rapid thermal heat treatment. We compared the lnJ- $E^{{\frac}{1}{2}}$, C-V, C-F of both as-deposited and annealed dielectric thin films deposited on Ta bottom electrode. From this results, we concluded that the leakage current could be reduced by introducing Ti-O buffer layer and conduction mechanisms of T $a_2$ $O_{5}$ and Ti-O/T $a_2$ $O_{5}$ could be interpreted appropriately by Schottky emission effect.

• Proceedings of the Korean Vacuum Society Conference
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• 2000.02a
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• pp.130-130
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• 2000

타이타늄(CP Ti)과 타？늄합금은 인체의 골격을 구성하고 있는 물질과 가장 흡사한 물리적 성질과 우수한 생체적합성으로 인해 임플란트용 재료로 많이 사용되고 있으며, 최근에 인공관절이나 치근으로의 사용이 증가하고 있다. 그러나 교합면에서의 취약한 마모특성으로 인해 wear debris에 의한 골 흡수 및 이완 등을 야기하는 문제점으로, 이의 개선에 관한 연구가 활발히 진행되어 왔다. 다이아몬드상 카본 (Diamond-Like-Carbon) 박막은, 다이아몬드와 유사한 높은 경도, 내마모성 그리고 화학적 안정성 등의 매우 우수한 물리화학적 특성을 가지고 있는 박막재료로 고체 윤활박막으로서 hard disk나 VCR head drum의 보호막, 우주항공기의 bearing 재료코팅 등으로의 적용이 최근에 급격히 증가하고 있다. 본 연구에서는 이와 같은 특성을 지닌 다이아몬드상 카본 박막의 생체재료로의 적용을 위해, CP Ti과 Ti-6Al-4V에 13.56MHz를 사용하는 r.f PACVD법으로 DLC를 증착하여 생체적합적 특성을 조사하였다. C6H6 가스를 사용하여 1$\mu\textrm{m}$의 두께로 DLC 박막을 증착하였으며, 기판과의 밀찰력 향상을 위해 Si을 증간층으로 합성하였다. 마모특성은 pin-on-disk type wear tester을 사용하였으며 직경 5mm의 ruby ball로 실험을 수행하였다.