• 한국표면공학회지
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• 제48권2호
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• pp.38-42
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• 2015

Atomic layer deposition (ALD) is essential for the fabrication of nanoscale electronic devices because it has excellent conformality, atomic scale thickness control, and large area uniformity. Metal thin films are one of the important material components for electronic devices as a conductor. As the size of electronic devices shrinks, the thickness of metal thin films is decreased down to few nanometers, and the metal films become non-continuous due to inherent island growth of metal below a critical thickness. So, fabrication of continuous metal thin films by ALD is fundamentally and practically important. Since ALD films are grown through self-saturated reactions between precursors on surface, initial growth characteristics significantly depend on the surface properties and the selection of precursors. In this work, we investigated ALD Pt on $TiO_2$ substrate by using trimethyl-methyl-cyclopentadienyl-Platinum ($MeCpPtMe_3$) precursor and $O_3$ reactant. By using $O_3$ instead of $O_2$, initial nucleation rate of ALD Pt was increased on $TiO_2$ surface, resulting in formation of continuous thin Pt films. Morphologies of ALD Pt on $TiO_2$ were characterized by using Scanning Electron Microscope (SEM) and Energy-Dispersive X-ray Spectroscopy (EDS). Crystallinity of ALD Pt on $TiO_2$ correlated with its growth characteristics was analyzed by X-Ray Diffraction (XRD).

• 전자공학회논문지D
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• 제35D권5호
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• pp.87-92
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• 1998

Ultr shallow p$^{+}$-n junction with Co/Ti bilayer silicidde contact was formed by ion implantation of BF$_{2}$ [energy : (30, 50)keV, dose:($5{\times}10^{14}$, $5{\times}10^{15}$/$\textrm{cm}^2$] onto the n-well Si(100) region and by RTA-silicidation and post annealing of the evaporated Co(120.angs., 170.angs.)/Ti(40~50.angs.) double layer. The sheet resistance of the silicided p$^{+}$ region of the p$^{+}$-n junction formed by BF2 implantation with energy of 30keV and dose of $5{\times}10^{15}$/$\textrm{cm}^2$ and Co/Ti thickness of $120{\AA}$/(40~$50{\AA}$) was about $8{\Omega}$/${\box}$. The junction depth including silicide thickness of about $500{\AA}$ was 0.14${\mu}$. The fabricated p$^{+}$ -n ultra shallow junction depth including silicide thickness of about $500{\AA}$ was 0.14${\mu}$. The fabricated p$^{+}$-n ultra shallow junction with Co/Ti bilayer silicide contact did not show any agglomeration or variation of sheet resistance value after post annealing at $850^{\circ}C$ for 30 minutes. The boron concentration at the epitaxial CoSi$_{2}$/Si interface of the fabricated junction was about 6*10$6{\times}10^{19}$ / $\textrm{cm}^2$./TEX>.

• 대한치과보철학회지
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• 제50권3호
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• pp.169-175
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• 2012

연구 목적: 온도 변화에 따른 $ZrO_2$와 Ti-6Al-4V의 접합 특성에 대해 알아보기 위하여 새로운 브레이징 합금을 제조하고, 브레이징 온도가 접합 특성에 미치는 영향에 대하여 조사하고자 하였다. 연구 재료 및 방법: 본 연구에서 사용된 시편으로는 실험용 $ZrO_2$ 모재(ZirBlank-PS, Acucera, Inc., Gyeonggi-do, Korea)는 소결 전의 블록형태($65mm{\times}36mm{\times}12mm(t)$)이며, 이를 잘라 사포(#2400)로 표면연마 후 소결하였다. 소결된 $ZrO_2$ 시편의 크기는 $3mm{\times}3mm{\times}3mm(t)$이다. Ti-6Al-4V 모재(Ti 6Al 4V ELI CG Bar, TMS, Washington, USA)는 직경 $10mm{\times}5mm(t)$를 사용하였다. 소결된 $ZrO_2$와 Ti-6Al-4V의 접합을 위하여 브레이징 합금을 제조하였다. 시편을 3군으로 나누어 A군은 $700^{\circ}C$에서, B군은 $750^{\circ}C$에서, C군은 $800^{\circ}C$에서 각각 브레이징 하였다. 브레이징 부의 두께와 결함율의 측정은 각 군당 하나의 시편으로 각 시편 당 5회씩 반복 측정하여 평균값을 취하였다. 결과: 브레이징 합금을 사용하여 진공 브레이징을 수행한 결과 $ZrO_2$ 와 Ti-6Al-4V 는 $700^{\circ}C-800^{\circ}C$에서 양호한 접합을 보였다. 브레이징 후 브레이징 온도 변화에 따른 브레이징 부의 두께 및 결함율의 변화는 SEM을 사용하여 측정하였다. 브레이징 온도가 $700^{\circ}C$에서 $800^{\circ}C$로 증가함에 따라 CuTi 금속간 화합물 층 및 Ti-Sn-Cu-Ag계 화합물 층의 두께는 각각 $4.5{\mu}m$에서 $10.3{\mu}m$로, $3.1{\mu}m$에서 $5.0{\mu}m$로 증가되었다. 또한 브레이징 온도가 $700^{\circ}C$에서 $800^{\circ}C$로 증가함에 따라 브레이징 접합계면의 결함율은 $ZrO_2$ 및 Ti-6Al-4V 계면에서 각각 25%에서 16.3%, 5%에서 1.5%로 감소되었다. 결론: 브레이징 온도가 $700^{\circ}C$에서 $800^{\circ}C$로 증가됨에 따라, 브레이징 접합계면의 결함율은 $ZrO_2$ 및 Ti-6Al-4V 계면에서 모두 감소되었다. 이는 결함부에서 $ZrO_2$와 활성원소인 Ti과의 반응이 충분히 일어나지 않아서 브레이징 합금이 $ZrO_2$에 웨팅되지 않은 것이 원인이라고 사료된다.

• 한국재료학회지
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• 제17권8호
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• pp.447-451
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• 2007

We investigated the dependence of the various annealing conditions and thickness ($6\sim45nm$) of the Ti-doped $Al_2O_3$ coating on the electrochemical properties and the capacity fading of Ti-doped $Al_2O_3$ coated $LiCoO_2$ films. The Ti-doped-$Al_2O_3$-coating layer and the cathode films were deposited on $Al_2O_3$ plate substrates by RF-magnetron sputter. Microstructural and electrochemical properties of Ti-doped-$Al_2O_3$-coated $LiCoO_2$ films were investigated by transmission electron microscopy (TEM) and a dc four-point probe method, respectively. The cycling performance of Ti-doped $Al_2O_3$ coated $LiCoO_2$ film was improved at higher cut-off voltage. But it has different electrochemical properties with various annealing conditions. They were related on the microstructure, surface morphology and the interface condition. Suppression of Li-ion migration is dominant at the coating thickness >24.nm during charge/discharge processes. It is due to the electrochemically passive nature of the Ti-doped $Al_2O_3$ films. The sample be made up of Ti-doped $Al_2O_3$ coated on annealed $LiCoO_2$ film with additional annealing at $400^{\circ}C$ had good adhesion between coating layer and cathode films. This sample showed the best capacity retention of $\sim92%$ with a charge cut off of 4.5 V after 50 cycles. The Ti-doped $Al_2O_3$ film was an amorphous phase and it has a higher electrical conductivity than that of the $Al_2O_3$ film. Therefore, the Ti-doped $Al_2O_3$ coated improved the cycle performance and the capacity retention at high voltage (4.5 V) of $LiCoO_2$ films.

• 한국정밀공학회지
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• 제15권8호
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• pp.33-38
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• 1998

TiYN coated high speed steel tools have been developed and their tool lifes were assessed. First yttrium alloyed titanium target was manufactured, then using the arc ion plating(AIP) technique TiYN coating was deposited onto high speed steel substrate. Three kinds of varying thickness of TiYN coated tools were prepared. Cutting tests were carried out with theses tools and for comparison with the commercially available uncoated, TiN, TiCN and TiAlN coated tools. During the cutting tests flank wear width vs. cutting time was measured. It has been revealed that the newly developed TiYN coated tools show superior tool life characteristics to others.

• 한국세라믹학회지
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• 제30권11호
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• pp.949-954
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• 1993

Microstructural development at the ZrO2/NiTi bonding interface and reaction products were examined and identified with SEM and AEM. Ti-oxide, Ti2Ni and Ni2Ti layer were observed whose thickness depends on bonding temperature typically. The development of Ti-oxide layer is related with oxygen ion in ZrO2 and liquid phase Ti2Ni. It is considered that compositional deviation from homogeneity and residual stress caused by thermal expansion mismatch are closely related with the formation of the Ti2Ni phase.

• 한국결정성장학회지
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• 제2권2호
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• pp.40-52
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• 1992

Titanium-iso-propoxide[$Ti(OC_3H_7)_4$]와 Tetra-ethyl-lead $[Pb({C_2}{H_5})_4]$를 사용한 MOCVD법으로 PbTi$O_3$박막을 55$0^{\circ}C$에서 증착하였다. Ar과 $O_2$를 각각 운반 및 반응기체로 사용하였으며, 열처리에 따른 박막의 두께와 굴절지수의 변화, Xtjs 회절 분석, CV 특성 측정등을 행하였다. 열처리에 따른 CV 특성 측정 결과 PbTi$O_3$는 Si기판과 계면 반응을 하는 것으로 생각되며, X선 회절 분석 결과 $PbTiO_3$의 특성 peak들이 관찰되었다. 열처리 시간 및 온도의 증가에 따라 박막의 두께는 감소하고, 굴절지수는 증가하는 경향을 보여 주었다.

• 한국표면공학회지
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• 제33권2호
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• pp.93-100
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• 2000

Effects of Ti content and Ti underlayer on the pitting behavior of TiN coated AISI 304 stainless steel have been studied. The stainless steel containing 0.1~1.0wt% Ti were melted with a vacuum melting furnace and heat treated at $1050^{\circ}C$ for 1hr for solutionization. The specimen were coated with l$\mu\textrm{m}$ and 2$\mu\textrm{m}$ thickness of Ti and TiN by E-beam PVD method. The microstructure and phase analysis were conducted by using XRD, XPS and SEM with these specimen. XRD patterns shows that in TiN single-layer only the TiN (111) Peak is major and the other peaks are very weak, but in Ti/TiN double-layer TiN (220) and TiN (200) peaks are developed. It is observed that the surface of coating is covered with titanium oxide (TiO$_2$) and titanium oxynitride ($TiO_2$N) as well as TiN. Corrosion potential on the anodic polarization curve measured in HCl solution increase in proportion to the Ti content of substrate and by a presence of the Ti underlayer, whereas corrosion and passivation current densities are not affected by either of them. The number and size of pits decrease with increasing Ti content and a presence of the coated Ti film as underlayer in the TiN coated stainless steel.

• 한국표면공학회지
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• 제35권4호
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• pp.211-217
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• 2002

Ti-Si-N films were deposited onto WC-Co substrate by a RF-PECVD technique. The deposition behaviors of Ti-Si-N films were investigated by varying the deposition temperature, RF power, and reaction gas ratio (Mx). Ti-Si-N films deposited at 500, 180W, and Mx 60% had a maximum hardness value of 38GPa. The microstructure of films with a maximum hardness was revealed to be a nanocomposite of TiN crystallites penetrated by amorphous silicon nitride phase by HRTEM analyses. The microstructure of maximum hardness with Si content (10 at.%) was revealed to be a nanocomposite of TiN crystallites penetrated by amorphous silicon nitride phase, but to have partly aligned structure of TiN and some inhomogeniety in distribution. and At above 10 at.% Si content, TiN crystallite became finer and more isotropic also thickness of amorphous silicon nitride phase increased at microstructure.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 1996년도 추계학술대회 논문집
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• pp.75-78
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• 1996

The deposition condition Gf TiN films as electrode was studied by sheet resistance, TiN depositon Thickness X-ray diffraction. TiN was made by reactively DC magnetron sputtering with varying $N_2$/Ar mixture gas and substrate temperature. After finding The deposition condition of TiN films, The samples with the structure of Cu/Ta$_2$O$_{5}$, TiN/Ta$_2$O$_{5}$Si, Cu/TiN/Ta$_2$O$_{5}$ Si were prepared and were measured I-V, C-V. As a results, it was found that when TiN was deposited in an $N_2$a results, it was found that when TiN was deposited in an $N_2$atmosphere its Sheet resistance is lower n than n V$_2$Ar mixtureixture