• Journal of the Korean institute of surface engineering
• /
• v.36 no.6
• /
• pp.480-490
• /
• 2003

Effects of plasma-nitriding on the pitting corrosion of Fe-30at%Al-5at%Cr alloy containing Ti, Hf, and Zr were investigated using potentiostat in 0.1M HCl. The specimen was casted by the vacuum arc melting. The subsequent homogenization was carried out in Ar gas atmosphere at $1000^{\circ}C$ for 7days and phase stabilizing heat treatment was carried out in Ar gas atmosphere at $500^{\circ}C$ for 5 days. The specimen was nitrided in the $N_2$, and $H_2$, (1:1) mixed gas of $10^{-4}$ torr at $480^{\circ}C$ for 10 hrs. After the corrosion tests, the surface of the tested specimens were observed by the optical microscopy and scanning electron microscopy(SEM). For Fe-30at%Al-5Cr alloy, the addition of Hf has equi-axied structure and addition of Zr showed dendritic structure. For Fe-30at%Al-5Cr alloy containing Ti, plasma nitriding proved beneficial to decrease the pitting corrosion attack by increasing pitting potential due to formation of TiN film. Addition of Hf and Zr resulted in a higher activation current density and also a lower pitting potential. These results indicated the role of dendritic structure in decreasing the pitting corrosion resistance of Fe-30Al-5Cr alloy. Ti addition to Fe-30Al-5Cr decreased the number and size of pits. In the case of Zr and Hf addition, the pits nucleated remarkably at dendritic branches.

• Journal of the Korean Vacuum Society
• /
• v.6 no.S1
• /
• pp.75-79
• /
• 1997

Optical and mechanical characteristics of $TiO-2, ZrO_2 \;and\; SiO_xN_y$ thin films prepared by ion assisted deposition (IAD) were investigated. IAD films were bombarded by Ar or nitrogen ion beam from a Kaufman ion source while they were grown in as e-beam evaporator. The result shows that the Ae IAD increases the refractive index and packing density of $TiO_2 films close to those of the bulk. For $ZrO_2$ films the Ar IAD increases the average refractive index decreases the negative inhomogeneity of refractive index and reverses to the positive inhomogeneity. The optical properties result from improved packing density and denser outer layer next to air The Ar-ion bombardment also induces the changes in microstructure of $ZrO_2$ films such as the preferred (111) orientation of cubic phase increase in compressive stress and reduction of surface roughness. Inhomogeneous refractive index SiOxNy films were also prepared by nitrogen IAD and variable refractive index of $SiO_xN_y$ film was applied to fabricate a rugate filter.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
• /
• 2004.07b
• /
• pp.656-658
• /
• 2004

Pb$(Zr_{0.8}Ti_{0.2})TiO_3$ powder were prepared by the sol-gel method using a solution of Pb-acetate, Zr n-propoxide and Ti iso-propoxide. PZT thick film were fabricated by the screen printing method, and the structural and ferroelectric properties asafunting of the sintering temperature were studied. PZT film thickness, obtained by four screen printing, was approximately $70\sim90{\mu}m$. The relative dielectric constant and the dielectric loss of the PZT thick film sintered at $1050^{\circ}C$t were approximately 676 and 1.4%, respectively. The remanent polarization and the coercive field of the PZT thick film sintered at $1050^{\circ}C$ were $21.15{\mu}C/cm^2$ and 10.1 kV/cm, mapetively

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
• /
• 1994.11a
• /
• pp.168-170
• /
• 1994

Pb($Zr_{0.52}$$Ti_{0.48}$)$O_3$ ceramic thin films were fabricated from an alkoxide-based solution by Sol-Gel method. Pb($Zr_{0.52}$$Ti_{0.48}$)$O_3$ ceramic thin films were formed by spin coating method on Pt/$SiO_2$Si substrate at 4000ppm for 30 seconds. The coating process was repeated 6 times and then heat-treated at temperature between 500∼800[$^{\circ}C$] for 1 hour. The final thickness of the thin films were about 4800[A]. The ferroelectric perovskite phases precipitated under the heat-treated at 700[$^{\circ}C$] for 1 hour. Pb($Zr_{0.52}$$Ti_{0.48}$)$O_3$ thin films heat-treated at 700[$^{\circ}C$] for 1 hour showed good dielectric and ferroclectric properties.

• Transactions on Electrical and Electronic Materials
• /
• v.11 no.2
• /
• pp.54-60
• /
• 2010

Polymer-assisted deposition is a chemical solution route to high quality thin films. In this process, the polymer controls the viscosity and binds metal ions, resulting in a homogeneous distribution of metal precursors in the solution and the formation of crack-free and uniform films after thermal treatment. We review our recent effort to epitaxially grow metal-nitride thin films, such as hexagonal GaN, cubic TiN, AlN, NbN, and VN, mixed-nitride $Ti_{1-x}Al_xN$, ternary nitrides tetragonal $SrTiN_2$, $BaZrN_2$, and $BaHfN_2$, hexagonal $FeMoN_2$, and nanocomposite TiN-$BaZrN_2$.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
• /
• v.19 no.10
• /
• pp.966-970
• /
• 2006

We reported on characteristics of the piezoelectric ceramic-polymer composite for the application of the thick-film speaker. The PVDF-PZT composites were fabricated to incorporate the advantages of both ceramic and polymer with various mixing ratios by 3-roll mill mixer. The composite solutions were coated by the conventional screen-printing method on ITO electrode coated PET (Polyethylene terephthalate) polymer film. After depositing the top-electrode of silver-paste, 4 kV/mm of DC field was applied at $120^{\circ}C$ for 30 min to poling the composite films. The value of $d_{33}$ (piezoelectric charge constant) was increased when the PZT weight percent was increased. The maximum value of the $d_{33}$ was 24 pC/N at 70 wt% PZT. But the $g{33}$ (piezoelectric voltage constant) showed the maximum value of $32mV{\cdot}m/N$ at 65 wt% of PZT powder. The SPL (sound pressure level) of the speaker fabricated with the 65:35 composite film was about 68 dB at 1 kHz.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
• /
• 1999.05a
• /
• pp.126-129
• /
• 1999

Dielectric and piezoelectric properties of perovskite materials such as La modified $Pb(Zr,Ti)O_3$ ceramics and $Pb(Zn_{1/3}Nb_{2/3})O_3-PbTiO_3$ single crystals were investigated for cryogenic capacitor and actuator applications. Enhanced extrinsic contributions resulted in piezoelectric coefficient (d33) as high as 250 pC/N at 30 K, superior to that of PZT ($d_{33}$ ~ 100 pC/N). This cryogenic property enhancement was associated with retuning the MPB (or cryogenic temperatures. PZN-PT single crystals exhibited dramatic property improvements such as $d_{33}$ > 500 pC/N at 30 K as a result of an engineered domain state.

• Proceedings of the Korean Institute of Surface Engineering Conference
• /
• 2001.06a
• /
• pp.13-13
• /
• 2001

현재 초고속 가공 공구의 국내 시장은 150억원이며 향후 3년 내에 1500억원으로 급성 장활 전망이다. 무윤활 초고속 가공을 실현하기 위해서는 윤활특성이 우수한 초고경도 코팅의 개발이 필요하며 이를 통해 기계설비의 수명향상과 폐유문제 해결을 기대할 수 있다. 기존의 고체윤활 코팅은 초고경도 코팅의 상부에 $MoS_2$, Graphite 등 윤활성 박막을 합성하였으나, 이들은 Hexagonal 구조의 연질 박막이며 수분이 존재하는 대기중에서는 윤활 및 내마모 특성이 급격히 저하된다. 환경친화 대체소재 개발의 일원으로 TiN, ZrN 박막 등이 이미 개발되었고 기계적 특성이 우수하여 널리 응용되고 있으나 아직 경도(약 20GPa 내외) 및 윤활성의 한계 (마찰계수 $\mu=O.6$)를 극복하지 못하고 있다. TiN박막 위의 Cu의 첨가는 TiN의 구조와 성질을 크게 변화시키는 것으로 알려져 있다. 따라서 본 연구에서는 TiN 기지 위에 Cu를 도핑함으로써 경도의 상승을 통환 내구력의 향상과 마찰계수의 감소를 통한 윤활성의 향상을 보고자하였다. TiN합성의 안정화를 위하여 magnetron sputtering과 arc ion pIatingd을 병용한 hybrid 공정을 이용하였다. Cu첨가에 따른 결정 성장 거동의 변화를 보기 위해 XRD 분석을 실행하였고, EDS 분석을 통해 Cu target 전류밀도에 의한 기지내의 Cu의 함량변화를 고찰하였으며, 경도 및 윤활특성을 고찰하기 위해서 경도 시험과 마모 시험(ball-on disc type test)를 하였다.

• Journal of the Korean Physical Society
• /
• v.73 no.11
• /
• pp.1712-1715
• /
• 2018

To study the applications for ferroelectric non-volatile memory and ferroelectric memristor, etc., deposition pressure dependent electric the properties of $(Hf,\;Zr)O_2$ thin films by RF sputtering deposition method were investigated. The bottom electrode was TiN thin film to produce stress effect on the formation of orthorhombic phase and top electrode was Pt thin film by DC sputtering deposition. Deposition pressure was varied along with the same other deposition conditions, for example, sputtering power, target to substrate distance, post-annealing temperature, annealing gas, annealing time, etc. The structural and electric properties of the above thin films were investigated. As a result, it is confirmed that the electric properties of the $(Hf,\;Zr)O_2$ thin films depend on the deposition pressure which affects structural properties of the thin films, such as, structural phase, ratio of the constituents, etc.

• Transactions of the Korean Society of Mechanical Engineers A
• /
• v.26 no.3
• /
• pp.428-435
• /
• 2002

Pyroelectric $Pb(Zr_{0.3}Ti_{0.7})O_3$ (PZT30/70) thin film IR detectors has been fabricated and characterised. The PZT30/70 thin film was deposited onto $Pt/Ti/Si_3N_4/SiO_2/Si$ substrate by the sol-gel process. Four different substrate conditions were studied for their effects on the pyroelectric responses of the IR detectors. The substrate conditions were the combinations of the Si etching and the Pt/Ti patterning. In the Si etched substrate, the $Si_3N_4/SiO_2$ composite layer was used as silicon etch-stop, and was used as the membrane to support the PZT pyroelectric film element as well. The measured pyroelectric current and voltage responses of detectors fabricated on the micro-machined thin $Si_3N_4/SiO_2$ membrane were two orders higher than those of the detectors on the bulk-silicon. For detectors on the membrane substrate, the Pt/Ti patterned detectors showed a 2-times higher pyroelectric response than that of not-patterned detectors. On the other hand, the pyroelectric response of the detectors on the not-etched Si substrate was almost the same, regardless of the Pt/Ti patterning. It was also found that the rise time strongly depended on the substrate thickness: the thicker the substrate was, the longer the rise-time.