• Proceedings of the Korean Vacuum Society Conference
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• 2000.02a
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• pp.123-123
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• 2000

선폭이 초미세화됨에 따라 게이트 전극에서의 공핍 현상 및 불순물 확산의 물제를 갖는 poly-Si 게이트를 대체할 전극 물질로 텅스텐(W)이 많이 연구되어 왔다. 반도체 소자의 배선물질로 일찍부터 사용되어온 텅스텐은 내화성 금속의 일종으로 용융점이 높고, 저항이 낮다. 그러나, 일반적으로 사용되고 있는 CVD에 의한 텅스텐의 증착은 반응가스(WF6)로부터 오는 불소(F)의 게이트 산화막내로의 확산으로 인해 MOS 소자가 크게 열화될수 있다. 본 연구에서는 W/TiN 이중 게이트 전극 구조를 갖는 MOS 캐패시터를 제작하여 전기적 특성을 살펴보았다. P-Type (100) Si위에 RTP를 이용, 85$0^{\circ}C$에서 110 의 열산화막을 성장 및 POA를 수행한 후, 반응성 스퍼터링법에 의해 상온, 6mTorr, N2/Ar=1/6 sccm, 100W 조건에서 TiN 박막을 150, 300, 500 의 3그룹으로 증착하였다. 그 위에 LPCVD 방법으로 35$0^{\circ}C$, 0.7Torr, WF6/SiH4/H2=5/5~10/500sccm 조건에서 2000~3000 의 텅스텐을 증착하였다. Photolithography 공정 및 습식 에칭을 통해 200$\mu\textrm{m}$$\times$200$\mu\textrm{m}$ 크기의 W/TiN 복층 게이트 MOSC를 제작하였다. W/TiN 복측 게이트 소자와 비교분석하기 위해 같은 조건의 산화막을 이용한 알루미늄(Al) 게이트, 텅스텐 게이트 MOSC를 제작하였다. 35$0^{\circ}C$에서 증착된 텅스텐 박막은 10~11$\Omega$/ 의 면저항을 가졌고 미소한 W(110) peak값을 나타내는 것으로 보아 비정질 상태에 가까웠다. TiN 박막의 경우 120~130$\Omega$/ 의 면저항을 가졌고 TiN (200)의 peak 값이 크게 나타난 반면, TiN(111) peak가 미소하게 나타났다. TiN 박막의 두께와 WF/SiH4의 가스비를 변화시켜가며 제작된 MOS 캐패시터를 HF 및 QS C-V, I-V 그리고 FNT를 통한 전자주입 방법을 이용하여 TiN 박막의 불소에 대한 확산 방지막 역할을 살펴 보았다. W/TiN 게이트 MOS 소자는 모두 순수 텅스텐 게이트보다 우수하였고, Al 게이트와 유사한 전기적 특성을 보여주었다. W/TiN 게이트 MOS 소자는 모두 순수 텅스텐 게이트보다 우수하였고, Al 게이트와 유사한 전기적 특성을 보여주었다. TiN 박막이 300 , 500 이고 WF6/SiH4의 가스비가 5:10인 경우 소자 특성이 우수하였으나, 5:5의 경우에는 FNT 전자주입 특성이 열화되기 시작하였다. 그리고, TiN박막의 두께가 150 으로 얇아질 경우에는 WF6/SiH4의 가스비가 5:10인 경우에서도 소자 특성이 열화되기 시작하였다. W/TiN 복층 게이트 MOS 캐패시터를 제작하여 전기적인 특성 분석결과, 순수 텅스텐 게이트 소자의 큰 저전계 누설 전류 특성을 해결할 수 있었으며, 불소확산에 영향을 주는 조건이 WF6/SiH4의 가스비에 크게 의존됨을 알 수 있었다. TiN 박막의 증착 공정이 최적화 될 경우, 0.1$\mu\textrm{m}$이하의 초미세소자용 게이트 전극으로서 텅스텐의 사용이 가능할 것으로 보여진다.

• Journal of Welding and Joining
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• v.18 no.5
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• pp.105-111
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• 2000

The wear behavior of thermal sprayed AlSiMg-40TiC composite coatings were studied as a function of load and sliding velocity under unlubricated conditions. Experiments were performed using a block-on-ring(WC-6wt%/Co, Hv 1500) type. The tests were carried out a various load(30∼ 125.5N) and sliding velocity(0.5∼2.0m/s). Three wear rate regions were observed in the AlSiMg-40TiC composite coatings. The wear rate in region I at low load (less then 8N( were less than 1×{TEX}$10^{-5}${/TEX}㎣/m. Low wear rates in region I resulted from the load-bearing capacity of TiC particles. The transition from region I to II occurred when the applied load exceeded the fracture and pull-out strength of the particles. The TiC fractured particles trapped between the specimen and the counterface acted as third-body abrasive wear. The subsurface layer worn surface in region II was composed of the mechanically mixed layer (MML). The wear rate increase abruptly above a critical load (region III). The high wear rate in region III was induced by frictional temperature and involves massive surface damage.

• Journal of the Korean Vacuum Society
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• v.7 no.2
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• pp.141-149
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• 1998

The W thin films were deposited on Si3N4 by a PECVD technique. The effects of substrate temperature and gas flow ratio on the properties of the W films were investigated. The deposition of W films were limited by surface reaction at the temperature range of 150>~$250^{\circ}C$, W films had the deposition rate of 150~530 $\AA$/min and stress of 0.85~$14.35\times10 ^9 \textrm {dynes/cm}^2}$ at various substrate temperatures and $SiH_4/WF_6$ flow ratios. $SiH_4/WF_6$ flow ratio affected the deposition rate and stress of the W films, expecially, excessive flow of SiH4 abruptly changed the structure, chemical bonding, and stress of the W films. Among the deposited W films on TiN, Ti, Mo, NiCr and Al adhesion layer, the one on the Al had the best adhesion property.

• Journal of the Korean Ceramic Society
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• v.26 no.3
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• pp.409-415
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• 1989

Si3N4-TiN electro-conductive ceramic composites with 7wt% Al2O3＋3wt% Y2O3 or 5wt% MgO as sintering aids were fabricated by pressureless sintering at 1,80$0^{\circ}C$ for 1h. The 3pt. flexural strength, KIC and Vickers hardness were measrued in order to investigate the effects of TiN on the mechanical properties. Also oxidation behavior was observed by measuring the weight gain after exposure to air at 1,10$0^{\circ}C$ for 100h. the reaction products between Si3N4 and TiN was not detected by XRD and EDS. Mechanical properties of the composites were not influenced by the addition of TiN less than 30vol%, but oxidation resistance of the composites was rapidly decreased with the amount of added TiN.

• Proceedings of the Korean Institute of Surface Engineering Conference
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• 2015.05a
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• pp.125-125
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• 2015

Ti-Al-Cr-N thin layer was prepared on Fe-Si thin sheet by arc ion plating to improve corrosion and mechanical properties. The compositions ratios of Fe : Cr : Al : Ti : Si : N of the thin layers at $500^{\circ}C$ was 1.24 : 0.56 : 36.82 : 32.72 : 0.59 : 28.07 [wt.%], respectively. The higher arc ion plating temperature was, the higher corrosion resistance and nano-hardness were observed due to chromium content. Corrosion potential and corrosion rate in artificial sea water of the coating layer were in the range of $-39mV_{SHE}$ and $2mA/cm^2$, respectively. Passivity was not observed in the artificial sea water. Nano-hardnesses of the thin layers was increased by adding Cr from 23.6 to 25.8 [GPa]. The friction coefficients and fatigue limits of the layers were 0.388, 0.031, respectively.

• Journal of the Korean Ceramic Society
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• v.33 no.12
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• pp.1421-1425
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• 1996

Sintered Si3N4 and Inconel composed of Ni(58-63%) Cr(21-25%) Al(1-17%) Mn(<1%) fe(balance) were pressurelessly joined by using Ag-Cu-Ti brazing filler metal at 950℃ and 1200℃ under N2 gas atmosphere of 1atm and their interfacial structures were investigated. In case that the reaction temperature was low as 950℃ its interfacial structure was "Inconel metal/Ti-rich phase layer/brazing filler metal layer/Si3N4 " Ti used as reactive metal existed in between inconel steel and brazing metal and moved to the interface of between brazing filler metal nd Si3N4 according as reaction temperature increased up to 1200℃. The interfacial structure of inconel steel-Si3N4 reacted at 1200℃ was ' inconel metal/Ni-rich phase layer containing of Fe. Cr and Si/Cu-rich phase layer containing of Mn and Si/Si3N4 " Cr Mn, Ni and Fe diffused to the interface of between brazing filler metal and Si3N4 and reacted with Si3N4 The most reactive components of ingredients of inconel metal were Cr and Mn. On the other hand Ti added as reactive components to Ag-Cu eutectic segregated into Ni-rich phase layer,.

• Journal of the Korean Crystal Growth and Crystal Technology
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• v.23 no.4
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• pp.161-166
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• 2013

AlN buffer layers have been used for the growth of GaN layers on Si substrates. However, the doping of high concentration of carriers into AlN layers is still not easy, therefore it may cause the increase of series resistance when it is used for the electrical or optical devices. In this work, to improve such a problem, the growth of GaN layers on Si substrates were performed using metal buffer layers instead of AlN buffer layer. We tried combinations of Ti, Al, Cr and Au as metal buffer layers for the growth of GaN on Si substrates. Surface morphology was measured by optical microscope and scanning electron microscope (SEM), and optical properties and crystalline quality were measured by photoluminescence (PL) and X-ray diffractometer (XRD), respectively. Electrical resistances for both cases of AlN and metal buffer layer were compared by current-voltage (I-V) measurement.

• Proceedings of the Korean Vacuum Society Conference
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• 2010.02a
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• pp.235-235
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• 2010

장비와 cutting기술의 발전으로, 높은 효율성을 지닌 어려운 작업 재료들의 고속 건조 가공기술은 생산성, 가격 인하 그리고 환경적인 관점에서 중요성이 증가하게 되었다. AlTiN에서 Si의 첨가는 40GPa이상의 고경도와 1000도 이상의 산화온도를 지닌 나노혼합물 코팅을 형성시키는 것으로 알려졌다. 또한 Si가 아닌 다른 soft 물질을 첨가하고 3성분 이상의 다성분계 박막을 형성하는 실험을 하여, 물성이 어떻게 달라지는지 확인하였다. 특히, 나노 코팅층 형성이 매우 어려운 Al-Ti-N 합금계에서 Si, Cu 첨가의 영향 및 이러한 코팅층 형성을 단일합금을 이용하여 행하였을 때, 장점을 확인하였다. 이러한 연구를 위하여 Ti-Al의 합금 조성을 경도가 가장 우수한 것으로 알려진 50 : 50으로 하여 타겟을 만들고 증착시켜 기초실험을 진행하여 물성조건을 확인하고 이에 근거하여 실험을 진행하였다. 또한 3 원계 합금으로서 Cu, Si를 첨가한 연구를 수행하였다. 또한, 최적 조성의 합금 조성을 확인한 후, 단일 합금 타겟을 제조하였으며 이를 이용하여 형성된 코팅층과 다성분계 타겟을 이용한 박막의 물성을 비교하였다. 증착된 박막의 분석장비로는 SEM, EDS, XRD 와 AFM등을 이용하였으며, 막의 조직과 증착 두께, 조도 그리고 경도를 확인하고 막의 물성 특성이 향상됨을 입증하였다.

• Journal of the Korean institute of surface engineering
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• v.54 no.3
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• pp.133-138
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• 2021

Ternary Ti-X-N coatings, where X = Al, Si, Cr, O, etc., have been widely used for machining tools and cutting tools such as inserts, end-mills, and etc. Ti-Al-N-O coatings were deposited onto silicon wafer and WC-Co substrates by a cathodic arc evaporation (CAE) technique at various negative substrate bias voltages. In this study, the influence of substrate bias voltages during deposition on the microstructure and mechanical properties of Ti-Al-N-O coatings were systematically investigated to optimize the CAE deposition condition. Based on results from various analyses, the Ti-Al-N-O coatings prepared at substrate bias voltage of -80 V in the process exhibited excellent mechanical properties with a higher compressive residual stress. The Ti-Al-N-O (-80 V) coating exhibited the highest hardness around 30 GPa and elastic modulus around 303 GPa. The improvement of mechanical properties with optimized bias voltage of -80 V can be explained with the diminution of macroparticles, film densification and residual stress induced by ion bombardment effect. However, the increasing bias voltage above -80 V caused reduction in film deposition rate in the Ti-Al-N-O coatings due to re-sputtering and ion bombardment phenomenon.

• Proceedings of the Korean Institute of Surface Engineering Conference
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• 1998.05a
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• pp.17-17
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• 1998