• 공업화학
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• 제21권4호
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• pp.445-451
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• 2010

광범위하게 사용되는 $TiO_2$는 자외선 영역 하에서는 상당히 효율적인 광반응 활성을 보이나 가시광 영역에서는 활성이 없는 단점을 가지고 있다는 것은 잘 알려져 있는 사실이다. 본 연구에서는 이러한 광촉매가 가지는 문제점을 보완하고자 하였다. 즉, $TiO_2$와 함께 가시광선 영역에서 전자전이를 보일 수 있는 전이금속 등을 활용하여 광반응을 저해하는 전자와 정공과의 재결합을 방지하고, 자외선 영역뿐만 아니라 가시광선 영역까지 넓은 파장 범위에서 광촉매 활성을 가질 수 있는 광촉매를 제조하였다. 이를 위하여 이온교환방법을 이용하여 H형 강산성 이온교환수지에 $TiO_2$ 전구체를 담지 시킨 다음, 전이금속 전구체 등을 담지 시키고 탄화/활성화 과정을 거쳐 전이금속과 이산화티탄이 동시에 존재하는 2종 광촉매(Ti-M-SCM)를 제조하였다. 또한 제조된 Ti-M-SCM의 광분해 효율을 평가하기 위하여 유동식 반응기에서 휴믹산을 대상으로 하여 파장 254 nm와 365 nm 하에서의 광분해 반응을 실시하였다.

• 한국재료학회지
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• 제22권4호
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• pp.202-206
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• 2012

$CoSi_2$ was formed through annealing of atomic layer deposition Co thin films. Co ALD was carried out using bis(N,N'-diisopropylacetamidinato) cobalt ($Co(iPr-AMD)_2$) as a precursor and $NH_3$ as a reactant; this reaction produced a highly conformal Co film with low resistivity ($50\;{\mu}{\Omega}cm$). To prevent oxygen contamination, $ex-situ$ sputtered Ti and $in-situ$ ALD Ru were used as capping layers, and the silicide formation prepared by rapid thermal annealing (RTA) was used for comparison. Ru ALD was carried out with (Dimethylcyclopendienyl)(Ethylcyclopentadienyl) Ruthenium ((DMPD)(EtCp)Ru) and $O_2$ as a precursor and reactant, respectively; the resulting material has good conformality of as much as 90% in structure of high aspect ratio. X-ray diffraction showed that $CoSi_2$ was in a poly-crystalline state and formed at over $800^{\circ}C$ of annealing temperature for both cases. To investigate the as-deposited and annealed sample with each capping layer, high resolution scanning transmission electron microscopy (STEM) was employed with electron energy loss spectroscopy (EELS). After annealing, in the case of the Ti capping layer, $CoSi_2$ about 40 nm thick was formed while the $SiO_x$ interlayer, which is the native oxide, became thinner due to oxygen scavenging property of Ti. Although Si diffusion toward the outside occurred in the Ru capping layer case, and the Ru layer was not as good as the sputtered Ti layer, in terms of the lack of scavenging oxygen, the Ru layer prepared by the ALD process, with high conformality, acted as a capping layer, resulting in the prevention of oxidation and the formation of $CoSi_2$.

• 한국재료학회지
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• 제6권1호
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• pp.124-129
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• 1996

TiN 기판상에 CVD와 무전해 도금을 이용하여 구리막을 성장시킬 때 여러 가지 전처리에 따른 증착 양상의 변화에 관하여 조사하였다. Cu(hfac)2를 선재(precursor)로 사용하여 CVD 증착을 실시할 때 각 전처리에 따른 TiN상의 구리막의 덮힘성(coverage)향상은 Pd-HF 활성화 처리>>HF dip> RF remote plasma의 순이었다. 특히 Pd-HF 활성화 처리를 해줄 경우 거의 완전한 연속막을 얻을수 있었으며 scotch tape peel test 결과 매우 양호한 부착특성을 보였으나, 이에 비해 전처리를 해주지 않은 경우에는 오랜 시간이 경과되어도 연속막으로 성장하지 못하고 섬모양의 큰 결정립을 이룰 뿐이었다. 이러한 차이는 Pd-HF 활성화 처리에 의해 표면에 미세하게 형성된 Pd층이 구리의 핵생성과 부착특성을 크게 향상시켰기 때문인 것으로 사료되며 이러한 효과는 무전해 도금의 경우에도 마찬가지였다. 그리고 기판과 증착온도에 따른 선택성을 보면 35$0^{\circ}C$이하에서는 pd-HF 활성화 처리에 의해서 SiO2에 대하여 TiN으로의 선택성을 가지나 그 이상의 온도에서는 선택성이 상실되었다.

• 한국세라믹학회지
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• 제35권9호
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• pp.969-973
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• 1998

Pb(Zr, Ti)O3 (PZT) (Zr:Ti= 52: 48) thin films were prepared on MgO(100) substrates by dipping-py-rolysis process using metal naphthenates as starting materials. Thin films were fabricated by spin coating technique and the precursor films were prefired at 20$0^{\circ}C$ in air for 0.5, 1, 2, 3, and 24 h followed by final heat treatment at 75$0^{\circ}C$ for 30min. Film prefired for 24 h lost orientational properties and pole figure analysis showed the lost of the epitaxial relationship between the films and substrate while highly a/c-axis oriented thin films were obtained for the samples prefired for 1, 2, and 3h.

• 한국재료학회:학술대회논문집
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• 한국재료학회 2003년도 추계학술발표강연 및 논문개요집
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• pp.111-111
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• 2003

The peroxo titanic acid solution was successfully prepared using titanium trichloride as a precursor. The basic properties of the TiO2 film prepared by the solution were investigated in view of phase change, bandgap energy, crystalline size etc. The film displayed amorphous TiO$_2$ at room temperature, anatase above 281$^{\circ}C$ and a mixture of anatase and rutile at 99$0^{\circ}C$, The crystalline size increases with annealing temperatures, while the bandgap energies decrease due to the quantum size effect and the formation of rutile phase which has low bandgap energy. As a result of TG-DTA, it was found that annealing treatment at 99$0^{\circ}C$ for 2h formed a mixtures of anatase and rutile through three steps: (1) the removal of physically adsorbed water (2) the decomposition of peroxo group (3) amorphous-anatase or anatase-rutile phase transformation.

• 한국세라믹학회지
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• 제42권8호
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• pp.548-553
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• 2005

$TiO_2$ nanofibers were fabricated by annealing electrospun $TiO_2$/PVP nanofibers for 3 h at $500^{\circ}C$ in air. Size and uniformity of electrospun $TiO_2$ nanofiber diameters were evaluated via XRD and SEM by varying electric field, PVP concentration, Ti tetraisopropoxide concentration and precursor flow rate. Experimental results revealed that the effect of PVP concentration on size and uniformity of electrospun $TiO_2$ nanofiber diameters was most profound, however, the other effects were relatively small. Uniform fibers with no beads were observed for the electrospun anatase titania nanofibers with a diameter of 170 nm.

• The Korean Journal of Ceramics
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• 제4권1호
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• pp.33-36
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• 1998

Epitaxially grown $Bi_4Ti_3O_{12}$ thin films on the MgO(100) substrates was prepared by dipping-pyrolysis process using metal naphthenates as starting materials. The films annealed at various temperatures were charactrized by X-ray diffraction $\theta$-2$\theta$ scans and pole-figure analysis ($\beta$ scanning). Highly c-axia oriented Bi4Ti3O12 films were crystallized by heat-treatment at 700$^{\circ}$ and 75$0^{\circ}C$ from precursor films pyrolyzed at 50$0^{\circ}C$. The X-ray pole-figure analysis indicated that the $Bi_4Ti_3O_{12}$ thin films have an epitaxial relationship with the MgO(100) substrates.

• The Korean Journal of Ceramics
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• 제4권3호
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• pp.199-203
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• 1998

$Pb(Zr, Ti)O_3$ (Pb:Zr:Ti=1:0.52:0.48) thin films were prepared on single crystal MgO(100) substrates by dipping-pyrolysis process using a solution of constituent metal naphthenates as starting materials. The solution was spin-coated onto substrate and the precursor films were pyrolyzed at $200^{\circ}C$ in air or at $200^{\circ}C$ in argon for 1, 2, 5 and 24h, followed by final heat treatment at $750^{\circ}C$. For all the films, highly (h00)/(00l)-oriented Pb$Pb(Zr, Ti)O_3$ thin films with smooth surfaces and crack-free were obtained, whereas thin film pyrolyzed in air for 24 h exhibited polycrystalline character. According to the pole-figure analysis, epitaxy of the product films was found to depend on pyrolysis atmosphere.

• 한국분말재료학회지
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• 제17권1호
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• pp.59-64
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• 2010

8 mol% Y-doped $SrTiO_3$ powder was synthesized by Pechini method from titanium isopropoxide, strontium nitrate, yttrium nitrate, citric acid and ethylene glycol. A $Y_2Ti_2O_7$ pyrochlore phase-free perovskite powder was obtained by calcining a polymeric resin, which was prepared from a precursor solution, at $500^{\circ}C$ in an air atmosphere. Low temperature calcination could lead to a fine-grained microstructure. In the case of a solid-state reaction, an extended heat-treatment at high temperature in a reduced atmosphere needed to obtain a single phase perovskite $SrTiO_3$.

• 한국세라믹학회지
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• 제45권6호
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• pp.345-349
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• 2008

$TiO_2$ coating ceramic tile for self-cleaning purpose was prepared by the precipitant dropping method using $TiCl_4$ as a precursor. $TiO_2$ film was formed on the ceramic tile by spray-coating technique and heat-treated at $500^{\circ}C$ for 1 h. The size and crystalline structure of $TiO_2$ particles were 15.3 nm and anatase phase. The outdoor exposure tests were conducted and the effects of outdoor exposure test conditions, such as exhaust concentration of contamination materials (test places), the UV light intensity (irradiation direction) and coating amounts of $TiO_2$ on the self-cleaning properties were investigated by the brightness measurements. As a results, self-cleaning property of $TiO_2$ coating tile was affected by the coating amount of $TiO_2$ however, not affected by the UV light intensity included in sun's ray (irradiation direction). $TiO_2$ coating ceramic tile can be utilized for exterior finishing materials because of self-cleaning property of $TiO_2$ coating tile.