• Current Photovoltaic Research
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• v.3 no.3
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• pp.85-90
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• 2015

Two-step processes for preparing $Cu(In,Ga)Se_2$ absorber layers consist of precursor layer formation and subsequent annealing in a Se-containing atmosphere. Among the various deposition methods for precursor layer, the nonvacuum (wet) processes have been spotlighted as alternatives to vacuum-based methods due to their potential to realize low-cost, scalable PV devices. However, due to its porous nature, the precursor layer deposited on Mo substrate by nonvacuum methods often suffers from thick $MoSe_2$ formation during selenization under a high Se vapor pressure. On the contrary, selenization under a low Se pressure to avoid $MoSe_2$ formation typically leads to low crystal quality of absorber films. Although TiN has been reported as a diffusion barrier against Se, the additional sputtering to deposit TiN layer may induce the complexity of fabrication process and nullify the advantages of nonvacuum deposition of absorber film. In this work, Mo oxide layers via thermal oxidation of Mo substrate have been explored as an alternative diffusion barrier. The morphology and phase evolution was examined as a function of oxidation temperature. The resulting Mo/Mo oxides double layers were employed as a back contact electrode for $CuInSe_2$ solar cells and were found to effectively suppress the formation of $MoSe_2$ layer.

• Journal of Powder Materials
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• v.18 no.1
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• pp.41-48
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• 2011

As a pore precursor, carbon black with different content of 0 to 60 vol% were added to (Ba,Sr)$TiO_3$ powder. Porous (Ba,Sr)$TiO_3$ ceramics were prepared by pressureless sintering at $1350^{\circ}C$ for 1h under air. Effects of carbon black content on the microstructure and PTCR characteristics of porous (Ba,Sr)$TiO_3$ ceramics were investigated. The porosity of porous (Ba,Sr)$TiO_3$ ceramics increased from 6.97% to 18.22% and the grain size slightly decreased from $7.51\;{\mu}m$ to $5.96\;{\mu}m$ with increasing carbon black contents. PTCR jump of the (Ba,Sr)$TiO_3$ ceramics prepared by adding carbon black was more than $10^5$, and slightly increased with increasing carbon black. The PTCR jump in the (Ba,Sr)$TiO_3$ ceramics prepared by adding 40 vol% carbon black showed an excellent value of $9.68{\times}10^5$, which was above two times higher than that in (Ba,Sr)$TiO_3$ ceramics. These results correspond with Heywang model for the explanation of PTCR effect in (Ba,Sr)$TiO_3$ ceramics. It was considered that carbon black is an effective additive for preparing porous $BaTiO_3$ based ceramics. It is believed that newly prepared (Ba,Sr)$TiO_3$ cermics can be used for PTC thermistor.

• Bulletin of the Korean Chemical Society
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• v.24 no.2
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• pp.197-204
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• 2003

The intracluster ion-molecule reactions of $Ti^+(H_2O)_n,\;Ti^+(CH_3OCH_3)_n,\;and\;Ti^+(CH_3OD)_n$ complexes produced by the mixing of the laser-vaporized plasma and the pulsed supersonic beam were studied using a reflectron time-of-flight mass spectrometer. The reactions of $Ti^+$ with water clusters were dominated by the dehydrogenation reaction, which produces $TiO^+(H_2O)_n$ clusters. The mass spectra resulting from the reactions of $Ti^+\;with\;CH_3OCH_3$ clusters exhibit a major sequence of $Ti^+(OCH_3)_m(CH_3OCH_3)_n$ cluster ions, which is attributed to the insertion of $Ti^+$ ion into C-O bond of $CH_3OCH_3$ followed by $CH_3$ elimination. The prevalence of $Ti^+(OCH_3)_m(CH_3OD)_n$ ions in the reaction of $Ti^+\;with\;CH_3OD$ clusters suggests that D elimination via O-D bond insertion is the preferred decomposition pathway. In addition, the results indicate that consecutive insertion reactions by the $Ti^+$ ion occur for up to three precursor molecules. Thus, examination of $Ti^+$ insertion into three different molecules establishes the reactivity order: O-H > C-O > C-H. The experiments additionally show that the chemical reactivity of heterocluster ions is greatly influenced by cluster size and argon stagnation pressure. The reaction energetics and formation mechanisms of the observed heterocluster ions are also discussed.

• Bulletin of the Korean Chemical Society
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• v.33 no.7
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• pp.2305-2308
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• 2012

Perovskite structured barium titanate particles ($BaTiO_3$) platelets were synthesized by molten salt synthesis and topochemical microcrystal conversion. As the precursors of $BaTiO_3$, plate-like $BaBi_4Ti_4O_{15}$ particles were first synthesized by the reaction of $Bi_4Ti_3O_{12}$, $BaCO_3$, and $TiO_2$ at $1080^{\circ}C$ for 3 h in $BaCl_2$-KCl molten salt. After the topochemical reactions, layer-structured $BaBi_4Ti_4O_{15}$ particles transformed to the perovskite $BaTiO_3$ platelets. $BaTiO_3$ particles with thickness of approximately $0.5{\mu}m$ and a length of $10-15{\mu}m$ retained the morphology feature of the $BaBi_4Ti_4O_{15}$ precursor. For <001> $Pb(Mg_{1/3}Nb_{2/3})O_3-32.5PbTiO_3$ (PMNT)-5 wt % PbO piezoelectric ceramics textured with 5 vol % of $BaTiO_3$ templates, the Lotgering factor reached 0.82, and $d_{33}$ was 870 pC/N.

• Korean Journal of Metals and Materials
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• v.50 no.9
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• pp.677-684
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• 2012

A feasible way to fabricate in-situ Al/TiC composites was investigated. An elemental mixture of $Al-TiO_2-C$ pellet was directly added into an Al melt at $800-920^{\circ}C$ to form TiC by self-combustion reaction. The addition of CuO initiates the self-combustion reaction to form TiC in $1-2{\mu}m$ at the melt temperature above $850^{\circ}C$. Besides the CuO addition, a diluent element of excess Al plays a significant role in the TiC formation by forming a precursor phase, $Al_3Ti$. Processing parameters such as CuO content, the amount of excess Al and the melt temperature, have affected the combustion reaction and formation of TiC, and their influences on the microstructures of in-situ Al/TiC composites are examined.

• Journal of the Korean Vacuum Society
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• v.6 no.1
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• pp.28-35
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• 1997

Effects of rapid thermal annealing on the characteristics of Cu films deposited from the (hfac)Cu(VTMS) precursor and on the barrier properties of TiN layers were studied. By the post-annealing, the electrical characteristics of Cu/TiN and the microstructures of Cu films were significantly changed. The properties of Cu films were more sensitive to the annealing temperature than the annealing time. Sheet resistance started to increase above $400^{\circ}C$, and the interreaction between Cu and Ti and the oxidation of Cu layer were observed above $600^{\circ}C$. The grain growth of Cu with the (111) preferred orientation was found to be most pronounced at $500^{\circ}C$. It revealed that the optimum annealing conditions for MOCVD-Cu/PVD-TiN structures to enhance the electrical characteristics without degradation of TiN barriers were in the range of $400^{\circ}C$.

• Korean Journal of Materials Research
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• v.6 no.1
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• pp.29-39
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• 1996

silica의 precursor로 TMOS를 사용하여 autoclave 내에서 supersritical drying으로 투명한 TiO2-SiO2 이성분계 aerogle을 얻을 수 있었다. 반응성이 뛰어난 titanium alkoxide의 중축합반응을 억제할 수 있는 강한 산성 영역에서 투명한 Aerogel을 얻을 수 있었으며, 물을 직접 첨가하지 않고 silicon alkoxide의 축합반응의 부산물인 물을 이용하여 titanium alkoxide의 반응성을 제어했을 때 투명성이 더욱 증진되었다.

• Korean Journal of Materials Research
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• v.27 no.11
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• pp.577-582
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• 2017

Self-cleaning and photocatalytic $TiO_2$ thin films were prepared by a facile sol-gel method followed by spin coating using peroxo titanic acid as a precursor. The as-prepared thin films were heated at low temperature($110^{\circ}C$) and high temperature ($400^{\circ}C$). Thin films were characterized by X-ray diffraction(XRD), Field-emission scanning electron microscopy(FESEM), UV-Visible spectroscopy and water contact angle measurement. XRD analysis confirms the low crystallinity of thin films prepared at low temperature, while crystalline anatase phase was found the for high temperature thin film. The photocatalytic activity of thin films was studied by the photocatalytic degradation of methylene blue dye solution. Self-cleaning and photocatalytic performance of both low and high temperature thin films were compared.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2010.03b
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• pp.20-20
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• 2010

We present a simple process for the fabrication of high performance transparent conducting films that contain single-walled carbon nanotubes (SWCNTs) noncovalently coated with an ultrathin titania layer. The hydrophobic interactions between nanotube surfaces and the acetylacetone (acac) ligands used to stabilize the $TiO_2$ precursor provide an interesting alternative method for noncovalently coating the SWCNTs with a titania layer. The ultrathin titania layer on SWCNTs prevented the oxidation of functionalized SWCNTs at high temperatures, and protected against water molecule absorption.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2010.06a
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• pp.279-279
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• 2010

We present a simple process for the fabrication of high performance transparent conducting films that contain single-walled carbon nanotubes (SWCNTs) noncovalently coated with an ultrathin titania layer. The hydrophobic interactions between nanotube surfaces and the acetylacetone (acac) ligands used to stabilize the $TiO_2$ precursor provide an interesting alternative method for noncovalently coating the SWCNTs with a titania layer. The ultrathin titania layer on SWCNTs prevented the oxidation of functionalized SWCNTs at high temperatures, and protected against water molecule absorption.