• Title/Summary/Keyword: Ti deposited glass

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ZnO Nanoparticle Based Dye-Sensitized Solar Cells Devices Fabricated Utilizing Hydropolymer at Low Temperature (저온에서 Hydropolymer를 이용한 ZnO 나노입자 염료 감응형 태양전지)

  • Kwon, Byoung-Wook;Son, Dong-Ick;Park, Dong-Hee;Yang, Jeong-Do;Choi, Won-Kook
    • Korean Journal of Materials Research
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    • v.20 no.9
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    • pp.483-487
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    • 2010
  • To fabricate $TiO_2$ nanoparticle-based dye sensitized solar cells (DSSCs) at a low-temperature, DSSCs were fabricated using hydropolymer and ZnO nanoparticles composites for the electron transport layer around a low-temperature ($200^{\circ}C$). ZnO nanoparticle with 20 nm and 60 nm diameter were used and Pt was deposited as a counter electrode on ITO/glass using an RF magnetron sputtering. We investigate the effect of ZnO nanoparticle concentration in hydropolymer and ZnO nanoparticle solution on the photoconversion performance of the low temperature fabricated ($200^{\circ}C$) DSSCs. Using cis-bis(isothiocyanato)bis(2,20 bipyridy1-4,40 dicarboxylato) ruthenium (II) bis-tetrabutylammonium (N719) dye as a sensitizer, the corresponding device performance and photo-physical characteristics are investigated through conventional physical characterization techniques. The effect of thickness of the ZnO photoelectrode and the morphology of the ZnO nanoparticles with the variations of hydropolymer to ZnO ratio on the photoconversion performance are also investigated. The morphology of the ZnO layer after sintering was examined using a field emission scanning electron microscope (FE-SEM). 60 nm ZnO nanoparticle DSSCs showed an incident photon-to-current conversion efficiency (IPCE) value of about 7% higher than that of 20 nm ZnO nanoparticle DSSCs. The maximum parameters of the short circuit current density ($J_{sc}$), the open circuit potential ($V_{oc}$), fill factor (ff), and efficiency ($\eta$) in the 60 nm ZnO nanoparticle-based DSSC devices were 4.93 mA/$cm^2$, 0.56V, 0.40, and 1.12%, respectively.

Application of OLED as the Integrated Light source for the Portable Lab-On-a-Chip (휴대형 랩온어칩을 위한 집적화 광원으로의 OLED 적용)

  • Kim, Ju-Hwan;Shin, Kyeong-Sik;Kim, Young-Min;Kim, Yong-Kook;Yang, Yeun-Kyeong;Kim, Tae-Song;Kang, Ji-Yoon;Kim, Sang-Sig;Ju, Byeong-Kwon
    • Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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    • 2004.05a
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    • pp.193-197
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    • 2004
  • The organic light emitting diode (OLED) is proposed as the novel source in the microchip because it has ideal merits (various wavelengths, thin-film structure and overall emitting) for the integration. In this paper, we fabricated the finger-type pin photodiodes for fluorescence detection and the advanced microchip with OLED integrated pn the microchannel. The finger-type in the diode design extended the depletion region and reduced the internal resistance about 31.2% than rectangular-type. The photodiodes had a 100pA leakage current and a 8720 sensitivity $(I_{Light}/I_{Dark})$ at -1 V bias. The interference filter with 32 layers ($SiO_2$, $TiO_2$) was directly deposited on the photodiode. The OLED was fabricated on the ITO coated glass and was bonded with LOC. The application of thin-film OLED increased the excitation efficiency and simplified the integration process extremely. The prototype device of this application had a superior sensitivity of 100nM-LOD in the fluorescence detection.

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The Effect of $PtCl_4$ Concentration on Dye-Sensitized Solar Cell Efficiency ($PtCl_4$ 농도에 따른 염료감응형 태양전지의 효율 변화)

  • Seo, Hyun-Seung;Park, Mi-Ju;Choi, Eun-Chang;Lee, Sung-Uk;Kim, Hyung-Jin;Hong, Byung-You
    • Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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    • 2008.11a
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    • pp.435-436
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    • 2008
  • Dye-sensitized Solar Cells(DSSCs) which convert incident sun light into electricity were expected to overcome global warming and depletion of fossil fuels. And it is one of study that is lately getting into the spotlight because manufacturing method is more simple and inexpensive than existing silicon solar cells. In this respect, DSSCs are in the limelight as the next generation solar cells. DSSCs are generally composed of a dye-modified $TiO_2$ photoelectrode, a Pt counter electrode, and an electrolytes containing a redox couple$(I^-/I_3^-)$. Among these elements, pt electrode were prepared by applying electric potential to FTO substrate in the $H_2PtCl_6$ solution. In this study, we report the solar cell efficiency depending on $PtCl_4$ concentration change. $PtCl_4$ concentration was 1mM, 5mM, 10mM, and 20mM, and adhered on FTO glass substrate by sintering process. When applied each $PtCl_4$ counter electrode on DSSC, the best efficiency was found at 10mM of $PtCl_4$ concentration. The catalyst promotes the movement of electron from the counter electrode to the electrolyte the higher the molarity, the better the efficiency. However, in case of 20mM, it is estimated that over-deposited $PtCl_4$ tends to restrict the movement of electron due to its bundle formation.

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Characteristics of Ir-Re Thin Films on WC for Lens Glass Molding by Ion Beam Assisted DC Magnetron Sputtering (Ion beam assisted DC magnetron sputtering에 대한 렌즈 유리 성형용 WC 합금의 Ir-Re 박막 특성)

  • Park, Jong-Seok;Park, Burm-Su;Kang, Sang-Do;Yang, Kook-Hyun;Lee, Kyung-Ku;Lee, Doh-Jae;Lee, Kwang-Min
    • Journal of Surface Science and Engineering
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    • v.41 no.3
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    • pp.88-93
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    • 2008
  • Ir-Re thin films with Ti interlayer were deposited onto the tungsten carbide substrate by ion beam assisted DC magnetron sputtering. The Ir-Re films were prepared with targets of having two atomic percent of 7:3 and 5:5. The microstructure and surface analysis of the specimen were conducted by using SEM, XRD and AFM. Mechanical properties such as hardness and adhesion strength of Ir-Re thin film also were examined. The interlayer of pure titanium was formed with 100 nm thickness. The film growth of Ir-30at.%Re was faster than that of Ir-50at.%Re in the same deposition conditions. Ir-Re thin films consisted of dense and columnar structure irrespective of the different target compositions. The values of hardness and adhesion strength of Ir-30at.%Re thin film coated on WC substrate were higher than those of Ir-50at.%Re thin film.

Carbon nanotube field emission display

  • Chil, Won-Bong;Kim, Jong-Min
    • Electrical & Electronic Materials
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    • v.12 no.7
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    • pp.7-11
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    • 1999
  • Fully sealed field emission display in size of 4.5 inch has been fabricated using single-wall carbon nanotubes-organic vehicle com-posite. The fabricated display were fully scalable at low temperature below 415$^{\circ}C$ and CNTs were vertically aligned using paste squeeze and surface rubbing techniques. The turn-on fields of 1V/${\mu}{\textrm}{m}$ and field emis-sion current of 1.5mA at 3V/${\mu}{\textrm}{m}$ (J=90${\mu}{\textrm}{m}$/$\textrm{cm}^2$)were observed. Brightness of 1800cd/$m^2$ at 3.7V/${\mu}{\textrm}{m}$ was observed on the entire area of 4.5-inch panel from the green phosphor-ITO glass. The fluctuation of the current was found to be about 7% over a 4.5-inch cath-ode area. This reliable result enables us to produce large area full-color flat panel dis-play in the near future. Carbon nanotubes (CNTs) have attracted much attention because of their unique elec-trical properties and their potential applica-tions [1, 2]. Large aspect ratio of CNTs together with high chemical stability. ther-mal conductivity, and high mechanical strength are advantageous for applications to the field emitter [3]. Several results have been reported on the field emissions from multi-walled nanotubes (MWNTs) and single-walled nanotubes (SWNTs) grown from arc discharge [4, 5]. De Heer et al. have reported the field emission from nan-otubes aligned by the suspension-filtering method. This approach is too difficult to be fully adopted in integration process. Recently, there have been efforts to make applications to field emission devices using nanotubes. Saito et al. demonstrated a car-bon nanotube-based lamp, which was oper-ated at high voltage (10KV) [8]. Aproto-type diode structure was tested by the size of 100mm $\times$ 10mm in vacuum chamber [9]. the difficulties arise from the arrangement of vertically aligned nanotubes after the growth. Recently vertically aligned carbon nanotubes have been synthesized using plasma-enhanced chemical vapor deposition(CVD) [6, 7]. Yet, control of a large area synthesis is still not easily accessible with such approaches. Here we report integra-tion processes of fully sealed 4.5-inch CNT-field emission displays (FEDs). Low turn-on voltage with high brightness, and stabili-ty clearly demonstrate the potential applica-bility of carbon nanotubes to full color dis-plays in near future. For flat panel display in a large area, car-bon nanotubes-based field emitters were fabricated by using nanotubes-organic vehi-cles. The purified SWNTs, which were syn-thesized by dc arc discharge, were dispersed in iso propyl alcohol, and then mixed with on organic binder. The paste of well-dis-persed carbon nanotubes was squeezed onto the metal-patterned sodalime glass throuhg the metal mesh of 20${\mu}{\textrm}{m}$ in size and subse-quently heat-treated in order to remove the organic binder. The insulating spacers in thickness of 200${\mu}{\textrm}{m}$ are inserted between the lower and upper glasses. The Y\ulcornerO\ulcornerS:Eu, ZnS:Cu, Al, and ZnS:Ag, Cl, phosphors are electrically deposited on the upper glass for red, green, and blue colors, respectively. The typical sizes of each phosphor are 2~3 micron. The assembled structure was sealed in an atmosphere of highly purified Ar gas by means of a glass frit. The display plate was evacuated down to the pressure level of 1$\times$10\ulcorner Torr. Three non-evaporable getters of Ti-Zr-V-Fe were activated during the final heat-exhausting procedure. Finally, the active area of 4.5-inch panel with fully sealed carbon nanotubes was pro-duced. Emission currents were character-ized by the DC-mode and pulse-modulating mode at the voltage up to 800 volts. The brightness of field emission was measured by the Luminance calorimeter (BM-7, Topcon).

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