• 한국진공학회:학술대회논문집
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• 한국진공학회 1999년도 제17회 학술발표회 논문개요집
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• pp.118-118
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• 1999

CVD방법에 의한 TiN 박막 형성에 있어서 ICP-CVD 방법이 대두되고 있다. 이것은 precursor에 대한 radical 형성, 식각된 패턴에서 양 벽의 self-shadowing 효과, 낮은 tress등으로 dense 한 박막을 얻을 수 있기 때문이다. TiN 박막은 Si 기판의 온도를 상온에서 50$0^{\circ}C$까지 유지하면서 TEMAT의 유량을 5-20sccm으로 변화시키면서 증착하였다. 증착 후 TiN 박막의 결정화에 따른 열처리는 Ar과 N2-가스분위기에서 in-situ로 증착하였다. 증착 후 TiN 박막증착 조건수립에 따른 플라즈마 특성진단은 전자의 온도와 밀도, 평균 전자밀도, 이온 에너지 분포, radical 분포, negative 이온분포 등으로 측정하였다. 플라즈마 변수에 따른 TiN 박막의 결정성과 상 변화는 XRD로 분석하였고, 조성비 및 TiN 박막의 원소화학적 상태, 결합에너지, 각 상에 따른 결합 에너지 천이정도, 초기 형성과정 및 반응기구 등은 RBS와 XPS로 조사하였다. TiN 박막의 표면상태, morphology 거칠기, TiN/Si(100)구조에서 계면상태 등은 SEM, AFM, 그리고 HRTEM으로 분석하였다. TiN 구조 박막의 비저항, carrier concentration 그리고 mobility 측정은 박막의 표면이 균일하고 bls-홀이 없는 것으로 하여 4-point probe 방법으로 측정하였다. 이들 분석으로부터 ICP-CVD 방법에 의하여 형성된 TiN 박막이 초고집적 반도체 소자의 contact barrier layer로서의 적용 가능성을 평가하였다.

• 한국진공학회지
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• 제12권S1호
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• pp.88-91
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• 2003

Electromagnetic interference shielding and near-infrared cutoff filters for plasma display panel application were designed and fabricated by radio frequency magnetron sputtering. Three types of the filters were prepared: the basic structure of type A consisted of [$TiO_2$ Ti Ag $TiO_2$]; type B, of [$TiO_2$ ITO Ag $TiO_2$]; type C, of [$TiO_2$ ITO Ag ITO $TiO_2$]. Ti and ITO layers deposited on Ag layers were employed as barriers to prevent the oxidation and the diffusion of Ag film into the adjacent oxide layers. Optical, electrical, chemical, and structural properties were investigated, and the result shows that the filters with the ITO barrier layers provided an enhancement in transmittance in the visible owing to a lower absorption of ITO layers than Ti layers. Type C filter showed better optical and electrical performances and smoother surface roughness than Type B and C filters: the average sheet resistance was as low as 1.51 $\Omega\Box$ (where $\square$ stands for a square film), the peak transmittance in the visible was as high as 78.2 %, and the average surface roughness was 1.48 nm.

• 전자공학회논문지A
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• 제31A권5호
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• pp.94-100
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• 1994

The junction failure mechanism of W plugs has not been fully understood while the selective W deposition has been widely used for plugging interconnection lines. In this paper, the thermal stability and junction failure mechanism of sub-micron contacts using selective CVD-W plugs were intensively studied with the metal lines of AISiCu, Ti/AISiCu and TiN/AISiCu. The experimental results showed that the contact chain resistance and leakage current in the AISiCu and Ti/AISiCu metallizations were significantly degraded after annealing. From the SEM analysis, it was found that the junction spiking, due to the Al atoms diffusion along the porous interface between selective CVD-W and contactside wall, caused the junction failure. In constast, there was no degradation of the contact resistance and junction leakage current in TiN/AISiCu metal structu-re. It is believed that the TiN barrier layer could prevent AI(Ti) atoms Fromdiffusing. Therefore, TiN barrier between W plug and Al should be used to impro-ve the thermal stability of sub-micron contacts using the selective CVD-W plugs.

• Current Photovoltaic Research
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• 제3권3호
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• pp.85-90
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• 2015

Two-step processes for preparing $Cu(In,Ga)Se_2$ absorber layers consist of precursor layer formation and subsequent annealing in a Se-containing atmosphere. Among the various deposition methods for precursor layer, the nonvacuum (wet) processes have been spotlighted as alternatives to vacuum-based methods due to their potential to realize low-cost, scalable PV devices. However, due to its porous nature, the precursor layer deposited on Mo substrate by nonvacuum methods often suffers from thick $MoSe_2$ formation during selenization under a high Se vapor pressure. On the contrary, selenization under a low Se pressure to avoid $MoSe_2$ formation typically leads to low crystal quality of absorber films. Although TiN has been reported as a diffusion barrier against Se, the additional sputtering to deposit TiN layer may induce the complexity of fabrication process and nullify the advantages of nonvacuum deposition of absorber film. In this work, Mo oxide layers via thermal oxidation of Mo substrate have been explored as an alternative diffusion barrier. The morphology and phase evolution was examined as a function of oxidation temperature. The resulting Mo/Mo oxides double layers were employed as a back contact electrode for $CuInSe_2$ solar cells and were found to effectively suppress the formation of $MoSe_2$ layer.

• 한국재료학회:학술대회논문집
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• 한국재료학회 2001년도 춘계학술발표강연 및 논문개요집
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• pp.67-67
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• 2001

• 한국재료학회:학술대회논문집
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• 한국재료학회 1998년도 IUMRS-ICEM ABSTRACT BOOK
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• pp.77.3-77
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• 1998

• 한국재료학회지
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• 제5권1호
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• pp.140-148
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• 1995

Transfer matrix를 사용하여 $TiO_{2}$ 및 Ag 단일 박막과 $TiO_{2}/Ag/TiO_{2}$ 다층 박막의 두계에 따른 투과도 특성을 예측하였으며, 이를 실제 스퍼터 증착하여 제조한 박막의 광학 특성과 비교하였다. $TiO_{2}$ 및 Ag 박막에서는 복소굴절률을 사용하므로써 실제 증착박막에서 측정된 특성과 근접한 투과도 곡선의 예측이 가능하였다. $TiO_{2}/Ag/TiO_{2}$ 3층 박막의 광학 특성은 Ag의 $TiO_{2}$층으로의 확산 및 응집에 의해 transfer matrix로 예측한 투과도 특성과 전혀 다른 거동을 나타내었다. 그러나 4nm 및 6nm 두계의 Ti 박막을 확산방지층으로 증착한 Ti$O_{2}$/Ti/Ag/Ti/Ti$O_{2}$ 구조의 5층 박막에서는 transfer matrix를 사용하여 예측한 $TiO_{2}/Ag/TiO_{2}$ 3층 박막의 투과도 곡선과 유사한 광학 특성을 얻을 수 있었다.

• 한국세라믹학회지
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• 제34권1호
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• pp.23-30
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• 1997

SrCO3 TiO2, 그리고 Nb2O5를 출발원료로 하여 환원분위기하에서 반도성 SrTiO3 소결첼르 제조하였다. 반도성 다결정 소결체 내에서 acceptor 역할을 할 수 있는 Na과 K 이온을 입계를 따라 80$0^{\circ}C$~120$0^{\circ}C$ 온도범위에서 확산시킨 후, 열처리조건에 따른 입계의 전기적 화학적 특성을 고찰하였다. 이차열처리한 소결체의 입계에는 일정한 전기적 포텐셜장벽과 이에 상관된 전자고갈영역이 형성되어 비선형적인 전류-전압 특성을 보이고 문턱전압(threshold voltage)은 10~70V, 입계포텐셜장벽은 0.1~2eV의 크기를 나타내었다. Na과 K 이온은 입계로부터 입자내부로 확산하여 20~50 nm 깊이의 확산층을 형성하며, 이들 확산층에서 Na 또는 K과의 치환에 기인하여 Sr농도가 감소하였으며 치환에 따른 전기적 중성유지를 위하여 산소 vacancy 농도가 증가하였다.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2004년도 춘계학술대회 논문집 반도체 재료 센서 박막재료 전자세라믹스
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• pp.133-136
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• 2004

In this study, the characteristics of 3C-SiC ohmic contact were investigated. Titanium-tungsten(TiW) films were used for contact metalization. The ohmic contact resistivity between 3C-SiC and TiW was measured by HP4155 and then calculated with the circular transmission line method(C-TLM). And also the physical properties of TiW and the interface between TiW and 3C-SiC were analyzed using XRD and AES. TiW films make a good role of a diffusion barrier and their contact properties with 3C-SiC are stable at high temperature.

• 한국세라믹학회지
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• 제36권11호
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• pp.1252-1260
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• 1999

The defect chemistry and electrical characteristics of the grain boundaries of semiconducting SrTiO3 ceramics synthesized with wet-chemically surface-coated powders were investigated. The starting powders were separated into groups of 1-10${\mu}{\textrm}{m}$ 10-20${\mu}{\textrm}{m}$ etc by sedimentation and sieving methods. Na+ ions were absorbed on the powder surfaces by wet chemical-treatment method. The width of the grain boundary ranged up to several nm and the intergranular materials was amorphous. The additives coated on the surface of the powders were observed to be present at the grain boundaries of the ceramics. The diffusion depth of the additives into grains was about 30nm for the SrTiO3 ceramics synthesized with 5w/o coated materials, The threshold voltage grain boundary resistance and boundary potential barrier of the ceramics increased from 0.67V/cm 2.27k$\Omega$ and 0.05eV to 80.9V/cm 13.0k$\Omega$ 1.44eV with increasing the amount of the additives from 0 to 5 w/o respectively .