• 대한치과보철학회지
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• 제27권2호
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• pp.219-248
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• 1989

The purposes of this study were to analyze the microstructural and compositional changes of metal surfaces following different conditions of preoxidizing heat treatment, to investigate the composition of metal oxides, and to evaluate the effect of preoxidation and removal of surface oxides on microstructure and diffusion profiles. The techniques of EDAX (energy-dispersive analysis of x-ray), ESCA (electron spectroscopy for chemical analysis), and EPMA (electron probe micro analysis) were used, along with SEM (scanning electron microscopy). The obtained results were as follows : 1. A surface of the specimen became rough and the amount of the metal oxides increased with increasing the heat treatment time and temperature and the partial pressure of oxygen. 2. At an air pressure of 28' vacuum, the higher the temperature and the longer the time of preoxidation, the higher Ni concentration was detected. 3. Cr concentration in the specimen heat treated with air was higher than that of with vacuum. 4. The oxides in the specimens were mainly composed of Ni and Cr oxides. On the globular growth particles, significant rises in Al concentration of Rexillium III and Ti concentration of Verabond were noted. 5. Atomic diffusion occurred at the ceramic-metal interface, furthermore the amount of the flux was increased with preoxidation heat treatment.

• 한국세라믹학회지
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• 제22권5호
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• pp.54-60
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• 1985

This study is concerned with the mechanism of PTCR in $BaTiO_3$ ceramics doped by $Nb^{+5}$ Since the vacancy compensation layer at the grain boundary of n-type doped $BaTiO_3$ ceramics has been known as a major factor for surface state to give PTCR phenomena the dependence of PTCR on such vacancy compensation layer was attemped to be confirmed experimentally in this study. For the experiment quenching and annealing at various temperature after sintering were adopted to induce difference in the thickness of vacancycompensation layer so as to exihibit difference of PTCReffect eachother. The TEX>$Ba^{++}$ cocentration at the grain and grain boundary was measured by EDAX to confirm the formation of the vacancy compensation layer. It was found that i)either decrease in the temperature for quenching ii) or increase in the temperature for annealing improves the PTCR effect clearly iii)increase in TEX>$Ba^{++}$ concentration at the grain boundary results in the improvement of PTCR effect. It was concluded that all the experimental results gave the evidence for the dependence of PTCR effect on the vacancy compensation layer at the grain boundary which had been induced possibly by the $Ba^{++}$ diffusion by the heat treatment conducted.

• 한국분말재료학회지
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• 제29권5호
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• pp.357-362
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• 2022

The low-temperature sinterability of TiO₂-CuO systems was investigated using a solid solution of SnO₂. Sample powders were prepared through conventional ball milling of mixed raw powders. With the SnO₂ content, the compositions of the samples were Ti_1-xSn_xO₂-CuO(2 wt.%) in the range of x ≤ 0.08. Compared with the samples without SnO₂ addition, the densification was enhanced when the samples were sintered at 900℃. The dominant mass transport mechanism seemed to be grain-boundary diffusion during heat treatment at 900℃, where active grain-boundary diffusion was responsible for the improved densification. The rapid grain growth featured by activated sintering was also obstructed with the addition of SnO₂. This suggested that both CuO as an activator and SnO₂ dopant synergistically reduced the sintering temperature of TiO₂.

• 한국결정성장학회지
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• 제22권4호
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• pp.183-189
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• 2012

고온 열수송용 재료로 이용되는 Hastelloy X의 표면처리에 따른 고온물성 개선에 대한 연구를 수행하였다. Hastelloy X 기판 상에 각각 PVD법인 Arc discharge 및 Sputtering을 이용하여 TiAlN 및 $Al_2O_3$ 박막을 표면 코팅(overlay coating) 하였고, 분위기 분말을 이용하여 Al을 금속표면을 통해 확산시키는 방법인 Pack cementation법을 이용한 Al 확산코팅(diffusion coating: aluminiding)법을 이용한 표면처리를 수행하였다. 이들 표면처리가 Ni-Cr계 합금의 고온열처리에서 생성되는 두꺼운 불균질 산화물($Cr_2O_3$)형성 억제에 미치는 효과와 조성 및 표면미세구조가 물성에 미치는 영향에 대해 알아보기 위해, 표면처리 된 Hastelloy X 샘플들을 공기 및 헬륨가스 분위기에서 $1000^{\circ}C$로 열처리 하였으며, 열처리된 전후 시편들에 대해 상형성, 미세구조 및 고온 물성 변화를 측정하였다. 이러한 실험결과를 통하여 표면코팅법에 의한 TiAlN 및 $Al_2O_3$ 박막에 비해 Al 확산코팅한 경우 두꺼운 불균질 산화물($Cr_2O_3$)형성이 억제되어 보다 균질한 미세구조와 높은 내마모성 등 높은 고온 안정성을 보여주는 것을 확인할 수 있었다.

• The Korean Journal of Ceramics
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• 제5권4호
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• pp.336-340
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• 1999

Glasses in the system $CaO-TiO_2-SiO_2-Al_2O_3-ZrO_2-B_2O_3$ were investigated to find the glass seal compositions suitable for use in the planar solid oxide fuel cell (SOFC). Glass-ceramics prepared from the glasses by one-stage heat treatment at $1,000^{\circ}C$ showed various thermal expansion coefficients (i,e., $8.6\times10^{-6^{\circ}}C^{-1}$ to $42.7\times10^{-6^{\circ}}C^{-1}$ in the range 25-$1,000^{\circ}C$) due to the viscoelastic response of glass phase. The average values of contact angles between the zirconia substrate and the glass particles heated at 1,000-$1,200^{\circ}C$ were in the range of $131^{\circ}\pm4^{\circ}$~$137^{\circ}\pm9^{\circ}$, indicating that the glass-ceramic was in partial non-wetting condition with the zirconia substrate. With increasing heat treatment time of glass samples from 0.5 to 24 h at $1,100^{\circ}C$, the DC electrical conductivity of the resultant glass-ceramics decreased from at $800^{\circ}C$. Isothermal hold of the glass sample at $1100^{\circ}C$ for 48h resulted in diffusion of Ca, Si, and Al ions from glass phase into the zirconia substrate through the glass/zirconia bonding interface. Glass phase and diffusion of the moving ion such as $Ca^{2+}$ in glass phase is responsible for the electrical conduction in the glass-ceramics.

• Journal of Welding and Joining
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• 제13권3호
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• pp.147-156
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• 1995

The change of microstructure in the bonded interlayer and tensile properties of joints were studied for liquid phase diffusion bonding using STS-310 and Incoloy-825 as base metal and base metal+B alloy as insert inetal. Main experimental results obtained in this study are as follows. 1) The optimum amount of B addition into the insert metal was found to be about 4mass%. 2) When isothermal solidification was completed, the microstructure in the bonded interlayer was the same with that of the base metal because of the grain boundary migration in the bonded interlayer. 3) All of the tensile specimen fractured at base metal and joints bonded at optimum condition exhibited tensile properties in excess of base metal requirements. 4) It was determined that fine car-borides and bordes such as M$_{23}$(C,B)$_{6}$, Cr$_{2}$B, and CrB in STS-310S and TiB in Incoloy-825 exist at the grain boundary around bonded interlayer. These precipitates almost disappeared after homogenizing treatment at 1373K for 86.4ks.s.

• 열처리공학회지
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• 제30권6호
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• pp.264-270
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• 2017

본 연구에서는 다이아몬드의 기계적 화학적 연마(MCP) 에 주목하여 기존에 알려진 다이아몬드 가공연마판을 주물 또는 파우더 소결 방식이 아닌 플라즈마 열분사 기법을 통하여 경제성이 높게 제작하고 이를 상용화 하고자 하였다. 저렴한 주철 모재에 연성이 높고 밀착성이 우수한 Al을 중간 코팅층으로 코팅하고, 상부 코팅층으로 다이아몬드와 화학반응을 하게 되는 Fe-Cr-Ni 및 Ti 코팅층을 플라즈마로 코팅하여 다이아몬드 연마판을 제작하였다. 또한, 물리적인 코팅방법인 플라즈마 열분사 코팅층의 밀착력을 개선 하기 위하여 $550^{\circ}C$ 6시간 동안 열처리를 수행하고 모재와 Al 코팅층 사이에 약 $5{\mu}m$ 정도의 확산층을 형성하여 밀착력을 개선할 수 있었다.

• E2M - 전기 전자와 첨단 소재
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• 제9권4호
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• pp.336-343
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• 1996

We have studied the preparation and the properties of $Ba_{1-x}$Sr$_{x}$TiO$_{3}$(BST) thin films by using the sol-gel method. Through the comparison of the effects of various solvents and additives in making solutions, we establish the production method of the stable solution which generates the high quality of BST film. We also set up the heat-treatment conditions for depositing the BST thin film through the TGA and XRD analyses. Through the comparison of the surface conditions of BST films deposited on Pt/Ta/SiO$_{2}$/Si and Pt/Ti/SiO$_{2}$/Si substrates, we find that Ta is more efficient diffusion barrier of Si than Ti so that Ta layer prevents the formation of hillocks. We fabricate the planar type capacitor and measure the dielectric properties of the BST thin film deposited on the Pt/Ta/SiO$_{2}$/Si substrate. Dielectric constant and dielectric loss tangent at 1V, 10kHz, and leakage current density at 3V of the BST thin film are 339, 0.052 and 13.3.mu.A/cm$^{2}$, respectively.ely.

• 한국분말재료학회지
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• 제31권2호
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• pp.146-151
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• 2024

Pure SnO₂ has proven very difficult to densify. This poor densification can be useful for the fabrication of SnO₂ with a porous microstructure, which is used in electronic devices such as gas sensors. Most electronic devices based on SnO₂ have a porous microstructure, with a porosity of > 40%. In pure SnO₂, a high sintering temperature of approximately 1300℃ is required to obtain > 40% porosity. In an attempt to reduce the required sintering temperature, the present study investigated the low-temperature sinterability of a current system. With the addition of TiO₂, the compositions of the samples were Sn_1-xTi_xO₂-CoO(0.3wt%)-CuO(2wt%) in the range of x ≤ 0.04. Compared to the samples without added TiO₂, densification was shown to be improved when the samples were sintered at 950℃. The dominant mass transport mechanism appears to be grain-boundary diffusion during heat treatment at 950℃.

• 한국재료학회지
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• 제8권6호
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• pp.499-504
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• 1998

코발트 폴리사이드 게이트 전극을 형성할 때, 원주형(columnar)과 입자형(granular)다결정 Si 및 비정질 Si 기판위에 Co 단일막(Co monolayer)또는 Co/Ti 이중막(Co/Ti bilayer)을 사용하여 형성한 $CoSi_{2}$의 열정안정을 비교하여 기판의 결정성과 CoSi/ sub 2/ 형성방법이 열적안정성에 미치는 영향을 연구하였다.$ 900^{\circ}C$에서 600초까지 급속열처리하였을 때 , 기판을 비정질을 사용하거나 기판에 관계없이 Co/Ti 이중막을 사용하면 열적안정성이 향상되었다, 이는 평탄하고 깨끗한 기판 Si표면과 지연된 Co확산으로 인해,조성이 균일하고 계면이 평탄한 CoSi$_{2}$가 형성되었기 때문이다. $ CoSi_{2}$의 열적안정성에 가장 중요한 인자는 열처리 초기 처음 형성된 실리사이드의 조성 균일성과 기판과의 계면 평탄성이었다.