• Proceedings of the Korean Vacuum Society Conference
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• 2000.02a
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• pp.71-71
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• 2000

본 연구에서는 차세대 마이크로파 유전체 소자로서의 응용을 목적으로 펄스 레이저 방식에 의하여 증착된 MgTiO3 박막의 전기적 특성을 종합적으로 연구 분석하였다. 이를 바탕으로 MgTiO3 박막의 유전손실 등과 같은 열화를 야기시키는 박막 내부 또는 박막과 기판간의 결함의 특성을 파악하여 열화 메카니즘을 분석하였다. MgTiO3는 마이크로파 영역에서의 우수한 유전특성과 같은 낮은 유전손실을 가지며, 온도 안정성 또한 우수하다. 현재까지 벌크 세라믹 MgTiO3 의 응용 광범위하게 연구되어 왔으나 박막의 제조공정 및 전기적 특성 분석은 미흡한 형편이다. 따라서 벌크 세라믹과는 특성이 상이한 박막의 전기적 특성분석 및 연구가 필요하다. 분석을 위한 소자의 기본 구조로서 Metal-Insulator-Semiconductor(MIS) 구조를 채택하였다. MgTiO3 박막을 증착하기 위한 기판으로는 n형 Si(100)기판과 p형 Si(100)기판을 사용하였고, Si 기판 위에 급속 열처리기 (RTP)를 이용하여 SiO2를 ~100 두께로 성장시킨 것과 성장시키지 않은 것으로 구분하여 제작하였다. MgTiO3 박막은 펄스 레이저 증착 방식(PLD)에 의하여 약 2500 두께로 증착되었으며, 200mTorr 압력의 산소 분위기 하에서 기판의 온도를 40$0^{\circ}C$~55$0^{\circ}C$까지 5$0^{\circ}C$간격으로 변화시키며 제작하였다. 상하부의 전극 금속으로는 Al을 이용하였으며, 열증발 증착기로 증착하였다. 증착된 MgTiO3 박막의 결정구조를 확인하기 위하여 XRD 분석을 수행하였으며, 박막의 전기적 특성을 분석하기 위해 Boonton7200 C-V 측정기와 HP4140P를 이용한 경우에는 C-V 곡선에 이력현상이 나타났으나, MgTiO3/SiO2를 이용한 경우에는 이력현상이 나타나지 않았고, 유전율은 감소하는 것으로 나타났다. I-V 측정 결과, 절연층으로 MgTiO3/SiO2를 이용한 경우에는 MgTiO3만을 절연층으로 사용한 경우에 비해 동일한 전계에서 낮은 누설전류 값을 가짐을 알 수 있었다. 또한 박막의 증착온도가 증가함에 따라서 C-V 곡선의 위치가 양의 방향으로 이동함을 확인하였다. 위의 현상은 기판의 종류에 관계없이 발생하는 것으로 보아 벌크 또는 계면에 존재하는 결함에 의한 것으로 추정된다. 현재 C-V 곡선의 이동 원인과 I-V 곡선의 누설전류 메카니즘을 분석 중에 있으며 그 결과를 학회에서 발표할 예정이다.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.21 no.11
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• pp.968-972
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• 2008

Ni/Ti/Al multilayer system ('/'denotes the deposition sequence) was tested for low-resistance ohmic contact formation to Al-implanted p-type 4H-SiC. Ni 30 nm / Ti 50 nm / Al 300 nm layers were sequentially deposited by e-beam evaporation on the 4H-SiC samples which were implanted with Al (norminal doping concentration = $4\times10^{19}cm^{-3}$) and then annealed at $1700^{\circ}C$ for dopant activation. Rapid thermal anneal (RTA) temperature for ohmic contact formation was varied in the range of $840\sim930^{\circ}C$. Specific contact resistances were extracted from the measured current vs. voltage (I-V) data of linear- and circular transfer length method (TLM) patterns. In constrast to Ni contact, Ni/Ti/Al contact shows perfectly linear I-V characteristics, and possesses much lower contact resistance of about $2\sim3\times10^{-4}\Omega{\cdot}cm^2$ even after low-temperature RTA at $840^{\circ}C$, which is about 2 orders of magnitude smaller than that of Ni contact. Therefore, it was shown that RTA temperature for ohmic contact formation can be lowered to at least $840^{\circ}C$ without significant compromise of contact resistance. X-ray diffraction (XRD) analysis indicated the existence of intermetallic compounds of Ni and Al as well as $NiSi_{1-x}$, but characteristic peaks of $Ti_{3}SiC_2$, a probable narrow-gap interfacial alloy responsible for low-resistance Ti/Al ohmic contact formation, were not detected. Therefore, Al in-diffusion into SiC surface region is considered to be the dominant mechanism of improvement in conduction behavior of Ni/Ti/Al contact.

• Journal of the Korean Ceramic Society
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• v.25 no.3
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• pp.231-236
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• 1988

In order to investigate the effect of second phase on $Al_2O_3$ matrix, SiC particles were dispersed in $Al_2O_3$ matrix as a second phase over the content range of 5 vol.% to 20 vol.%. To this mixture, $Y_2O_3$ or $TiO_2$ powders were added as a sintering additive before isostatically pressing and pressurelessly sintering at 180$0^{\circ}C$ for 90 min in $N_2$ atmosphere. With increasing SiC content, relative densities of composites were decreased but mechanical properties of composites were improvjed. In the case of adding $Y_2O_3$ as a sintering additive, maximum values of flexural strength, hardness and fracture toughness were 525 MPa, 17.1 GPa, 4.1 MPa.m1/2 respectively. In the case of adding X$TiO_2$ as a sintering additive, maximum values of flexural strength, hardness were 285 MPa, 12.1 GPa respectively. Improved mechanical properties were found to be the results of grain growth control of $Al_2O_3$ matrix and crack deflection by the second phase SiC particles.

• Korean Journal of Materials Research
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• v.27 no.11
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• pp.603-608
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• 2017

$Si_3N_4$ is a ceramic material attracting attention in many fields because of its excellent abrasion resistance. In addition, Ti and TiAl alloys are metals used in a variety of high temperature environments, and have attracted much attention because of their high strength and high melting points. Therefore, study of the interface reaction between $Si_3N_4/Ti$ and $Si_3N_4/TiAl$ can be a useful practice to identify phase selection and diffusion control. In this study, $Si_3N_4/Ti_5Si_3+TiN/TiN/Ti$ diffusing pairs were formed in the $Si_3N_4/Ti$ interfacial reaction and $Si_3N_4/TiN(Al)/Ti_3Al/TiAl$ diffusion pathway was identified in the $Si_3N_4/TiAl$ interfacial reaction. The diffusion layers of the interface reactions were identified and, to investigate the kinetics of the diffusion layer, the integrated diffusion coefficients were estimated.

• Journal of the Korean institute of surface engineering
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• v.36 no.2
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• pp.128-134
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• 2003

Alloys of Ti-43%Al-2%W-0.1%Si were oxidized isothermally and cyclically between $900^{\circ}C$ and$ 1050^{\circ}C$, and their oxidation characteristics were studied. During isothermal tests, the alloys oxidized slowly up to 100$0^{\circ}C$, but fast at $1050^{\circ}C$. Though the scale adherence was not good above $900^{\circ}C$, the alloys displayed better oxidation behavior than unalloyed TiAl alloys. The oxide scales consisted primarily of an outer $TiO_2$ layer, intermediate $Al_2$$O_3$-rich layer, and an inner mixed layer of (TiO$_2$ $+Al_2$$O_3$). Tungsten was present mainly at the lower part of the oxide scale, while Si over the whole oxide scale.

• Journal of Welding and Joining
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• v.18 no.5
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• pp.98-104
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• 2000

Aluminum alloys are being employed in automobile parts as strive to reduce overall vehicle weight to meet demands for improved fuel economy and reduction in vehicle emissions. Al-based composites reinforced with ceramic ($Al_2O_3,\;SiC,\;TiC\;and\;B_4C$) applications in a variety of components in automotive engines, such as liners, where the tribological properties of the material are important. In this study, Al-base composites reinforced with TiC particle powders has been developed for producing plasma spray coatings. The composite plasma spray powders were prepared Al-13Si-3Mg(wt%) alloy with TiC(40, 60 and 80wt%) particles ($0.2~5{\mu}textrm{m}$) by drum type ball milling. The composite powders ($36~76{\mu}textrm{m}$) were sprayed with plasma torch. Plasma sprayed coatings were heat-treated at $500^{\circ}C$ for 3 hours. The wear resistances of the plasma sprayed coatings were found to decrease with increasing TiC content and improved with heat treatment. AlSiMg-40% TiC heat-treated coatings were showed the best wear resistance in this study.

• Journal of the Korean Ceramic Society
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• v.35 no.4
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• pp.311-318
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• 1998

The reaction bonded alumina ceramics with reinforced particles which have low shrinkage were pro-duced by blending of SiC or TiC or ZrO2 powders to the mixture of Al metal and Al2O3 powder. The powd-ers were attrition milled isostantically pressed and preheated tio 110$0^{\circ}C$ with a heating rate of $1.5^{\circ}C$/min The specimens were then sintered at the temperature range 1500 to 1$600^{\circ}C$ for 5 hours with a heating rate of 5$^{\circ}C$/min. The specimens showed 5-9% weight gain and 2-9% dimensional expansion through the complete oxidation of Al after preheating up to 11--$^{\circ}C$ the overall dimensional change of the specimens after the reaction sintering at 1500-1$600^{\circ}C$ was 6-12% The maximum densities were 92% theoretical. The fine grain-ed(average grain size :0.4 ${\mu}{\textrm}{m}$) microstructure were observed in the specimen with ZrO2 and SiC. But the microstructure of specimen with TiC was relatively coarse.(average grain size : 2.1 ${\mu}{\textrm}{m}$) The mullite phase was formed by the reaction of Al2O3 and SiO2 in a specimen with SiC. In the TiC contained specimen TiC was oxidized into TiO2 and finally reacted with Al2O3 to form Al2TiO5 during sintering.

• Proceedings of the Korean Institute of Information and Commucation Sciences Conference
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• 2003.05a
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• pp.501-504
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• 2003

In this paper, for enhancement of property on a-Si:H TFTs We measure interface characteristics of ferroelectrics thin film and a-Si:H thin film. First, SrTiO$_3$ thin film is deposited bye-beam evaporation. Deposited films are annealed for 1 hour in N2 ambient at 150$^{\circ}C$ ∼ 600$^{\circ}C$. Dielectric characteristics of deposited SrTiO$_3$ films are very good because dielectric constant shows 50∼100 and breakdown electric field are 1∼1.5MV/cm. a-SiN:H,a-Si:H(n-type a-Si:H) are deposited onto SrTiO$_3$ film to make MFNS(Metal/ferroelectric/a-SiN:H/a-Si:H) by PECVD. After the C-V measurement for interface characteristics, MFNS structure shows no difference with MNS(Metal/a-SiN:H/a-Si:H) structure in C-V characteristics but the insulator capacitance value of MFNS structure is much higher than the MNS because of high dielectric constant of ferroelectrics.

• Journal of the Korean Vacuum Society
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• v.7 no.3
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• pp.208-213
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• 1998

Silicidation of the Co/Ti/Si bilayer system in which Ti is used as epitaxy promoter for $CoSi_2$has recently received much attention. The Co/Ti bilayer on the spacer oxide of gate electrode must be thermally stable at high temperatures for a salicide transistor to be fabricated successfully. In the $SiO_2$substrate was rapid-thermal annealed. The Sheet resistances of the Co/Ti bilayer increased substantially after annealing at $600^{\circ}C$, which is due to the agglomeration of the Co layer to reduce the interface energy between the Co layer and the $SiO_2$substrate. In the bilayer system insulating Ti oxide stoichiometric Ti oxide and silicide were not found after annealing.

• Proceedings of the KIEE Conference
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• 2007.11a
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• pp.124-125
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• 2007

The composites were fabricated $\beta$-SiC and $TiB_2$ powders with the liquid forming additives of 8, 12, 16[wt%] $Al_2O_3+Y_2O_3$ as a sintering aid by pressureless annealing at $1,650[^{\circ}C]$ for 4 hours. Reactions between SiC and transition metal $TiB_2$ were not observed in the microstructure and the phase analysis of the pressureless annealed SiC-$TiB_2$ electroconductive ceramic composites. The relative density, the flexural strength, the Young's modulus and the Vicker's hardness showed the highest value of 82.29[%], 189.5[MPa], 54.60 [GPa] and 2.84[GPa] for SiC-$TiB_2$ composites added with 16[wt%] $Al_2O_3+Y_2O_3$ additives at room temperature. The relative density of SiC-$TiB_2$ composites was lowered due to gaseous products of the result of reaction between SiC and $Al_2O_3+Y_2O_3$. The electrical resistivity showed the lowest value of 0.012[${\Omega}{\cdot}cm$] for 16[wt%] at 25[$^{\circ}C$]. The electrical resistivity was all negative temperature coefficient resistance (NTCR) in the temperature ranges from 25[$^{\circ}C$] to 700[$^{\circ}C$].